• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.7
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• pp.762-768
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• 2003

This paper reports the effects of gain flatness for linearity improvement of feedforward power amplifier fur IMT-2000 band. To investigate the operational characteristics for gain flatness of each amplifier, WCDMA 4FA input signal was used and measured 10 W output power. Especially, linearity improvement for variation of gain flatness of each amplifier was investigated that have an effect on linearity improvement such as delay line, phase, and amplitude imbalances. Variation of gain flatness of main amplifier is 40 MHz and of error amplifier is 40 MHz and 80 MHz bandwidth, respectively. Measured results, gain flatness of main amplifier is less than 1.5 dB and of error amplifier is less than 0.5 dB for more than 20 dB improvement at 5 MHz offset. In addition to that results, the characteristics of feedforward amplifier are drastically varied by gain flatness of error amplifier and it is shown that gain flatness of error amplifier is more important factor for linearity improvement.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.7
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• pp.800-806
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• 2008

In this paper, a wide-band dipole antenna suitable for use in PCS/WCDMA/WiBro($1.750{\sim}2.39\;GHz$) base station array antenna is presented. The presented antenna is a dipole antenna with pate which has the reflector element and improves the gain flatness. To confirm the wide-band characteristics and the gain flatness of the presented antenna, the experimental antenna is fabricated and its radiation characteristics are measured, compared with calculated results. It is shown that the designed antenna has VSWR less than 1.5, gain over 5 dBi, and gain flatness 0.74 dB in $1.75{\sim}2.39\;GHz$. The measured results show good agreement with the calculated results. From these results, we confirm that the designed antenna can be used as a array element of the wide-band base station array antenna for PCS/WCDMA/WiBro.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.35 no.5A
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• pp.519-527
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• 2010

In this paper, we design and implement a broadband LNA(Low Noise Amplifier), a mixer, and oscillators in RF module part for radar detector. For resolving the limitation of the conventional product that the sensitivity is low due to the poor gain flatness, we propose the architecture of RF module part. The proposed RF module part is composed with a broadband 2-stage LNA, a mixer, and three oscillators, and improves the maximum gain and gain flatness for detecting various frequencies. The overall performances of RF module part are above 38 dB conversion gain in whole band and 1 dB gain flatness. These results show that the maximum gain which is the problem of the conventional product is improved 6 dB from 35 dB to 41 dB, and gain flatness is also improved 17 dB from 22 dB to 5 dB.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2003.05a
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• pp.92-96
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• 2003

In this paper, 30 W power Amplifier for IMT-2000 repeater was developed gain flatness and the third IMD (Intermodulation distortion) by Microwave absorber. The absorption ability of the absorber is measured up to -10 ㏈ and -4 ㏈ at 3.6 ㎓, 2.3 ㎓ band respectively. Non using absorber power amplifier has the gain over 57 ㏈, the gain flatness of ${\pm}$0.33 ㏈ and the third IMD of 27 ㏈c at 33.3 W output. Otherwise, using absorber power amplifier has the gain over 58㏈, the gain flatness of less than ${\pm}$0.9, the third IMD over 29 ㏈c at the same output power. As a result, the characteristic of the different type show improvement of 1 ㏈ in gain, 0.3 ㏈ in Gain flatness and 1.77 ㏈c in IMD.

• ETRI Journal
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• v.29 no.5
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• pp.673-675
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• 2007

We present the design and fabrication of a 60 GHz medium power amplifier monolithic microwave integrated circuit with excellent gain-flatness for a 60 GHz radio-over-fiber system. The circuit has a 4-stage structure using microstrip coupled lines instead of metal-insulator-metal capacitors for unconditional stability of the amplifier and yield enhancement. The gains of each stage of the amplifier are modified to provide broadband characteristics of input/output matching for the first and fourth stages and to achieve higher gains for the second and third stages to improve the gain-flatness of the amplifier for wideband.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.8
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• pp.1572-1579
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• 2009

In this dissertation ultra-broadband power amplifier(UPA) was designed and fabricated using negative feedback technique. UPA was made of pre-amplifier, drive amplifier and power amplifier. Negative feedback technique was used to achieve ultra-broadband performance. Designed power amplifier has 30dB gain and 2W output power. The load-pull data of power amplifier for optimal power matching was extracted from the measured S-parameter. Fabricated PCB material, permittivity is 4.6 and thickness is 0.8mm, is FR4 and UPA was fabricated 3 modules for comparison of the simulated and measured results. Size of the fabricated pre-amplifier and drive amplifier module is 40mm'50mm'16mm. And from the experimental results, gain of the pre-amplifier module is 9.87dB at 2GHz and flatness is 0.63dB. Experimental result of the drive amplifier module is 10.97dB at 2GHz and flatness of that is 0.26dB. Test result of the power amplifier module is 10.71dB at 2GHz and flatness is 0.72dB. Total size of the power amplifier is 45mm'134mm'16mm. According to the test results, gain of the UPA is 28.98dB at 2GHz and flatness is 1.68dB. Output power was 32.098dBm at 2GHz, 32.154dBm at 1GHz and 31.273dBm at 100MHz.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.623-624
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• 2006

In this paper, we introduce the design and fabrication of V-band power amplifier MMIC with excellent gain-flatness for IEEE 802.15.3c WPAN system. The V-band power amplifier was designed using ETRI' $0.12{\mu}m$ PHEMT process. The PHEMT shows a peak transconductance ($G_{m,peak}$) of 500 mS/mm, a threshold voltage of -1.2 V, and a drain saturation current of 49 mA for 2 fingers and $100{\mu}m$ total gate width (2f100) at $V_{ds}$=2 V. The RF characteristics of the PHEMT show a cutoff frequency, $f_T$, of 97 GHz, and a maximum oscillation frequency, $f_{max}$, of 166 GHz. The gains of the each stages of the amplifier were modified to have broadband characteristics of input/output matching for first and fourth stages and get more gains of edge regions of operating frequency range for second and third stages in order to make the gain-flatness of the amplifier excellently for wide band. The performances of the fabricated 60 GHz power amplifier MMIC are operating frequency of $56.25{\sim}62.25\;GHz$, bandwidth of 6 GHz, small signal gain ($S_{21}$) of $16.5{\sim}17.2\;dB$, gain flatness of 0.7 dB, an input reflection coefficient ($S_{11}$) of $-16{\sim}-9\;dB$, output reflection coefficient ($S_{22}$) of $-16{\sim}-4\;dB$ and output power ($P_{out}$) of 13 dBm. The chip size of the amplifier MMIC was $3.7{\times}1.4mm^2$.

• Proceedings of the IEEK Conference
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• 2002.07a
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• pp.654-657
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• 2002

This paper introduces the design and implementation of 40-㎓-band low noise amplifier (LNA) with ultra low gain flatness for wide-band wireless multimedia and satellite communication systems. The 40-㎓-band 4-stage LNA MMIC (Monolithic Microwave Integrated Circuit) demonstrates a small signal gain of more than 20 ㏈, an input return loss of 10.3 ㏈, and an output return loss of 16.3 ㏈ for 37$\square$42 ㎓. The gain flatness of the 40-㎓-band 4-stage LNA MMIC was 0.1 ㏈ for 37$\square$42 ㎓. The noise figure of the 40 ㎓-band LNA was simulated to be less than 2.7 dB for 37~42 ㎓. The chip size of the 4-stage LNA MMIC was 3.7${\times}$1.7 $\textrm{mm}^2$.

• Journal of Navigation and Port Research
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• v.27 no.4
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• pp.437-441
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• 2003

In this paper, the 30 W power amplifier for an IMT-2000 repeater was developed a gain flatness and the third IMD (Intermodulation distortion) by microwave absorber. The absorption ability of the absorber is shown up to -10 dB and -4 dB at 3.6 GHz, 2.3 GHz band, respectively. The power amplifier without absorber has the gain over 57 dB, the gain flatness of $\pm$0.33 dB and the third IMD of 27 dBc at 33.3 W output. Otherwise, the power amplifier with absorber has the gain over 58 dB, the gain flatness of less than $\pm$0.9, the third IMD over 29 dBc at the same output power. As a result, the characteristic of the different type shows improvement of 1 dB in gain, 0.3 dB in gain flatness and 1.77 dBc in IMD.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2000.11a
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• pp.150-153
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• 2000

In this paper, we have designed a 2 stage MMIC power amplifier which has flat gains of in-band and reasonable out-band cutoff characteristics using 0.5$\mu\textrm{m}$ MESFET libra교 of ETRI. For the 1st stave, we obtaind P$_{1dB}$ of 9.2 dBm and gain 10.8 dB using 6 finger D-MESFET and P$_{1dB}$ of 18.4 dBm and gain of 10.8 dB using 14 finger D-MESFET for the 2nd stage, which is power matched using LIBRA's embedded TUNER. Also in-band gain flatness and out-band cutoff characteristics are obtained by attaching LC tank in the output matching circuit. The designed 2 stage MMIC power amplifier has bandwidth of 0.95～2.8 GHz, gain of 20 dB and P$_{1dB}$of 17.2 dBm. Especially gain flatness of $\pm$0.8dB was obtained in 1.8～2.5 GHz frequency ranges. And chip size is 1.4$\times$1.4 mm..4 mm.