• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.212-212
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• 2013

We fabricate and characterize top gate Graphene transistor using aluminum oxide as a gate insulator by atomic layer deposition (ALD). It is found that due to absence of functional group and dangling bonds, ALD of metal oxide is difficult on Graphene. Here we used 4-mercaptopheneol as a functionalization layer on Graphene to facilitate uniform oxide coverage. Contact angle measurement and Atomic force microscopy were used to confirm uniform oxide coverage on Graphene. Raman spectroscopy revealed that functionalization with 4-mercaptopheneol does not induce any defect peak on Graphene. Our device shows mobility values of 4,000 $cm^2/Vs$ at room temperature which also suggest top gate stack does not significantly increase scattering. The noncovalent functionalization method is non-destructive and can be used to grow ultra-thin dielectric for future Graphene applications.

• 한국농공학회지
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• 제37권1호
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• pp.49-54
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• 1995

Three types of floating-type automatic inlet were developed for the purpose of reduc- ing farmer's working hours required for water management and saving irrigation water. The point of automation is to use a float within the inlet which is floated and sinked by the ponding depth of paddy field, Thus opens and closes the control gate of irrigation. Suitability of each inlet may depend on production cost, applicability to paddy field condi- tions, and feasibility to farmers, etc. The first model was composed of three parts : chamber for irrigation control gate, chamber for float controlled by ponding depth, and connection bar between the two parts. It was designed to open and close the control gate gradually as the ponding depth drops and rises to a certain level. The second model was designed to improve the weak point of the first model which is the imperfect-closing of gate when it approaches to the end of ir- rigation. A switch-spring was equipped above the connection bar for perfect opening and closing of gate when the ponding depth reaches to a certain level. The third model was designed by combining the two chambers, that is, cut in halves the inlet volume of the above two models. Magnets were equipped above the float for perfect opening and closing gate. The functional experiment for three developed inlets was successfully carried out and the rating curves were derived.

• 전자공학회논문지C
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• 제34C권8호
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• pp.8-21
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• 1997

In this paper, we consider resistive shorts on gate-source, gate-drain, and drain-source as well as opens in MOS FETs included in typical memory cell of VLSI SRAM and analyze behavior of memory by using PSPICE simulation. Using conventional fault models and this behavioral analysis, we propose linear testing algorithm of complexity O(N) which can be applied to both functional testing and IDDQ (quiescent power supply current) testing simultaneously to improve functionality and reliability of memory. Finally, we implement BIST (built-in self tsst) circuit and BICS(built-in current sensor), which are embedded on memory chip, to carry out functional testing efficiently and to detect various defects at high-speed respectively.

• Macromolecular Research
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• 제17권9호
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• pp.646-650
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• 2009

We report the fabrication of pentacene organic field-effect transistors (OFETs) using a fluorinated styrene-alt-maleic anhydride copolymer gate dielectric, which was prepared from styrene derivatives with a fluorinated side chain [$-CH_2-O-(CH_2)_2-(CF_2)_5CF_3$] and maleic anhydride through a solution polymerization technique. The fluorinated side chain was used to impart hydrophobicity to the surface of the gate dielectric and maleic anhydride was employed to improve its wetting properties. A field-effect mobility of 0.12 cm$^2$/Vs was obtained from the as-prepared top-contact pentacene FETs. Since various functional groups can be introduced into the copolymer due to the nature of maleic anhydride, its physical properties can be manipulated easily. Using this type of copolymer, the performance of organic FETs can be enhanced through optimization of the interfacial properties between the gate dielectric and organic semiconductor.

• 대한한의학원전학회지
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• 제26권4호
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• pp.253-266
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• 2013

Objective : There was no attempt to understand Moving Energy between two kidneys(腎間動氣) and Kidney on Left & Life Gate on Right(左腎右命門) by integration progress. So I have faced to study based on two parts with concerning as clues. One is 'Life Right (左 右)' and the other is 'Between(間)'. Methods : Revealing the source of the origin, Nanjingbenyi(難經本義) is given on the basis. Take a close look at publications related to Nanjing(難經) which is about Kidney on Left & Life Gate on Right and Moving Energy between two kidneys. Take a close look at Kidney, the Life Gate and Moving Energy between two kidneys. Look see the three-dimensional uplift movement of Gi(氣). Results : In Neijing(內經) and Nanjing, the basic point of view for Kidney is the same. That is explained in line with attributes of convergence(收斂). 'Life Gate(命門)' is a term to express the divergence feature(發散機能) of kidney. Moving Energy between two kidneys is used to mean the mainspring of human body activity. The Gi in human body loses altitude turning left(左旋而下降) and gains height turning right(右旋而上升). Conclusion : Watching on functional aspect, there are two names for kidney. One is 'Kidney(腎)' which collects the losing altitude turning left and the other is 'Life Gate' which rises turning right. Moreover, the fundamental power that effectuate the uplift movement is Moving Energy between two kidneys. This kind model is a way that can be understood syntagmatically the Kidney on Left & Life Gate on Right and the Moving Energy between two kidneys without any gainsaying the original of Nanjing.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1987년도 전기.전자공학 학술대회 논문집(II)
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• pp.1467-1470
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• 1987

This paper proposes a functional simulation algorithm which decrease the internal memory space and run time in simulation of VLSI. Flip-flop, register, ram, rom, ic and fun are described as functional elements in the simulator. Especially icf is made as new functional element by combining the gate and the functional element, therefore icf is used efficiently in simulation of VLSI. The proposed algorithm is implemented on PC-AT(MS-DOS) in by Prolog-1.

• 한국진공학회지
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• 제18권2호
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• pp.147-150
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• 2009

Polydimethylsiloxane (PDMS) 기능성 박막을 도입하여 적은 게이트 누설 전류 특성을 가지는 유기트랜지스터를 제작하고 평가하였다. UV/ozone 처리를 하여 PDMS 표면에 위치한 소수성의 메틸 그룹의 화학적 결합을 끊어 친수성 실리콘 산화막 성질로 표면을 변화시키고 선택적인 펜타신 증착을 유도하였다. Off 전압상태 ($V_g-V_t>0$)에서 게이트 전압에 의해 기인하는 누설 전류는 선형영역 ($V_d=-5\;V$)과 포화영역 ($V_d=-30\;V$)에서 ${\sim}10^{-10}$ A의 값을 보여주며 기존의 트랜지스터 보다 개선된 누설 전류 특성을 나타내었다.

• 대한기계학회논문집A
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• 제27권6호
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• pp.1020-1027
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• 2003

A traditional mold design has been conducted by an experience-based trial and error, whereby the mold designer would decide the gate locations and processing conditions based on the caring characteristics and its functional requirements. The paper suggests an optimal gate location and processing conditions in the injection molding using a global search method referred to as micro genetic algorithm( ${\mu}$ GA). ${\mu}$ GA yields the optimal solution with a small size of population without respect to design variables for saving time that is needed to calculate the fitness of many individuals. Due to the reason, the paper uses a commercial analysis package of injection molding(CAPA) to analysis a state of flux. In addition to that, axiomatic approach .is applied in the beginning of design. It is a useful method to draw a well-organized and reasonable idea to handle a problem.

• Nuclear Engineering and Technology
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• 제44권6호
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• pp.697-708
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• 2012

The majority of instrumentation and control (I&C) systems in today's nuclear power plants (NPPs) are based on analog technology. Thus, most existing I&C systems now face obsolescence problems. Existing NPPs have difficulty in repairing and replacing devices and boards during maintenance because manufacturers no longer produce the analog devices and boards used in the implemented I&C systems. Therefore, existing NPPs are replacing the obsolete analog I&C systems with advanced digital systems. New NPPs are also adopting digital I&C systems because the economic efficiencies and usability of the systems are higher than the analog I&C systems. Digital I&C systems are based on two technologies: a microprocessor based system in which software programs manage the required functions and a programmable logic device (PLD) based system in which programmable logic devices, such as field programmable gate arrays, manage the required functions. PLD based systems provide higher levels of performance compared with microprocessor based systems because PLD systems can process the data in parallel while microprocessor based systems process the data sequentially. In this research, a bistable trip logic in a reactor protection system (RPS) was developed using very high speed integrated circuits hardware description language (VHDL), which is a hardware description language used in electronic design to describe the behavior of the digital system. Functional verifications were also performed in order to verify that the bistable trip logic was designed correctly and satisfied the required specifications. For the functional verification, a random testing technique was adopted to generate test inputs for the bistable trip logic.

• Journal of Information Display
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• 제11권3호
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• pp.95-99
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• 2010

A series of new dielectric polymers with phenyl, epoxy, and carboxylicacid functional groups was prepared via free-radical polymerization. The effect of such dielectric polymers with various functional groups on the performance of OTFT was investigated. The nonpolar groups of terpolymer made the surface of the dielectric layer more hydrophobic and improved the crystal growth of pentacene on the gate insulator, resulting in higher mobility. By controlling the functional group, the electric characteristics of OTFT performance was varied, with $0.00017-0.15\;cm^2/V{\cdot}s$ mobility.