• Journal of electromagnetic engineering and science
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• v.13 no.2
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• pp.127-133
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• 2013

We examined the scaling effects of a number of gate_fingers (N) and gate_widths (w) on the high-frequency characteristics of $0.1-{\mu}m$ metamorphic high-electron-mobility transistors. Functional relationships of the extracted small-signal parameters with total gate widths ($w_t$) of different N were proposed. The cut-off frequency ($f_T$) showed an almost independent relationship with $w_t$; however, the maximum frequency of oscillation ($f_{max}$) exhibited a strong functional relationship of gate-resistance ($R_g$) influenced by both N and $w_t$. A greater $w_t$ produced a higher $f_{max}$; but, to maximize $f_{max}$ at a given $w_t$, to increase N was more efficient than to increase the single gate_width.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.482-483
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• 2011

Graphene is a good candidate for the future nano-electronic materials because it has excellent conductivity, mobility, transparency, flexibility and others. Until now, most graphene researches are focused on the nano electronic device applications, however, biological application of graphene has been relatively less reported. We have fabricated a deoxyribonucleic acid (DNA) conjugated graphene field-effect transistor (FET) and measured the electrical transport characteristics. We have used graphene sheets grown on Ni substrates by chemical vapour deposition. The Raman spectra of graphene sheets indicate high quality and only a few number of layers. The synthesized graphene is transferred on top of the substrate with pre-patterned electrodes by the floating-and-scooping method [1]. Then we applied adhesive tapes on the surface of the graphene to define graphene flakes of a few micron sizes near the electrodes. The current-voltage characteristic of the graphene layer before stripping shows linear zero gate bias conductance and no gate operation. After stripping, the zero gate bias conductance of the device is reduced and clear gate operation is observed. The change of FET characteristics before and after stripping is due to the formation of a micron size graphene flake. After combined with 30 base pairs single-stranded poly(dT) DNA molecules, the conductance and gate operation of the graphene flake FETs become slightly smaller than that of the pristine ones. It is considered that DNA is to be stably binding to the graphene layer due to the ${\pi}-{\pi}$ stacking interaction between nucleic bases and the surface of graphene. And this binding can modulate the electrical transport properties of graphene FETs. We also calculate the field-effect mobility of pristine and DNA conjugated graphene FET devices.

• Journal of the Korean Institute of Telematics and Electronics B
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• v.33B no.7
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• pp.70-79
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• 1996

To increase the functionality of the memories, previous studies have deifned faults models and proposed functional testing algorithms with low complexity. Although conventional testing depended strongly on functional (voltage) testing method, it couldn't detect short and open defects caused by gate oxide short and spot defect which can afect memory reliability. Therefore, IDDQ (quiescent power supply current) testing is required to detect defects and thus can obtain high reliability. In this paper, we consider resistive shorts on gate-source, gate-drain, and drain-source as well as opens in mOS FET and observe behavior of the memory by analyzing voltage at storge nodes of the memory and IDDQ resulting from PSPICE simulation. Finally, using this behavioral analysis, we propose a linear testing algorithm of complexity O(N) which can be applicable to both functional testing and IDDQ testing simultaneously to obtain high functionality and reliability.

• Journal of Korea Water Resources Association
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• v.48 no.5
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• pp.379-391
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• 2015

Multi-functional weirs has been installed in four rivers are hydraulic structures across the river. The structures were divided into movable and fixed weirs. Hence, riverbed-level variation and sediment transport can be varied due to water gate operation. In this study, the long-term riverbed-level variation of Geum river basin due to water gate operation of multi-functional weirs was studied. Result of this study shows that the variation of thalweg elevation was greater than the variation of annual average riverbed elevation due to multi-functional weirs construction and water gate operation. Maximum riverbed degradation of thalweg elevation that occurred was 2.79m and riverbed aggradation was 1.90m. Maximum riverbed degradation of the annual average riverbed elevation that occurred was 2.16m and riverbed aggradation was 1.24m. Analysis result of flood stage by the variation of riverbed-level shows that flood stages were increased in majorities area. The maximum increase in the value of flood stage was 2.23m. For this reason, flood stages can be greater than the freeboard of the levees. Therefore, we should consider the water gate operation of multi-functional weirs when planning and managing sediment in the river. We are expecting to use the result of this study in river planning for river management and selecting the river regime.

• Proceedings of the KIEE Conference
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• 1987.07b
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• pp.1577-1580
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• 1987

This paper proposes a gate and functional level logic simulator which can be run on XENIX O.S. The simulator has hierarchical structure including Hardware Description Language compiler, Waveform Description Language compiler, and Simulation Command Language compiler. The Hardware Description Language compiler generates data structure composed of gate structure, wire structure, condition structure, and event structure. Simulation algorithm is composed of selective trace and event-driven methods. To improve simulation speed, Cross Referenced Linked List Structure ia defined in building the data structure of circuits.

• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.4
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• pp.652-657
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• 1987

This paper describes an application of CMOS Gate Array Integrated Cricuits to the implementation of three functional units: A Multiplexer, Time Switch, and Demultiplexer in the Switching Network and Digital Line Concentrator of TDX-1 system, which is a fully digital time division electronic switching system in Korea. The application of CMOS Gate Array Integrated Circuits significantly improves the overall system performance in terms of power consumption, cost, size, reliability, and timing margin, etc.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.491-491
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• 2011

Transparent and flexible electronic devices that are light-weight, unbreakable, low power consumption, optically transparent, and mechanical flexible possibly have great potential in new applications of digital gadgets. Potential applications include transparent displays, heads-up display, sensor, and artificial skin. Recent reports on transparent and flexible field-effect transistors (tf-FETs) have focused on improving mechanical properties, optical transmittance, and performances. Most of tf-FET devices were fabricated with transparent oxide semiconductors which mechanical flexibility is limited. And, there have been no reports of transparent and flexible all-organic tf-FETs fabricated with organic semiconductor channel, gate dielectric, gate electrode, source/drain electrode, and encapsulation for sensor applications. We present the first demonstration of transparent, flexible all-organic sensor based on multifunctional organic FETs with organic semiconductor channel, gate dielectric, and electrodes having a capability of sensing infrared (IR) radiation and mechanical strain. The key component of our device design is to integrate the poly(vinylidene fluoride-triflouroethylene) (P(VDF-TrFE) co-polymer directly into transparent and flexible OFETs as a multi-functional dielectric layer, which has both piezoelectric and pyroelectric properties. The P(VDF-TrFE) co-polumer gate dielectric has a high sensitivity to the wavelength regime over 800 nm. In particular, wavelength variations of P(VDF-TrFE) molecules coincide with wavelength range of IR radiation from human body (7000 nm ~14000 nm) so that the devices are highly sensitive with IR radiation of human body. Devices were examined by measuring IR light response at different powers. After that, we continued to measure IR response under various bending radius. AC (alternating current) gate biasing method was used to separate the response of direct pyroelectric gate dielectric and other electrical parameters such as mobility, capacitance, and contact resistance. Experiment results demonstrate that the tf-OTFT with high sensitivity to IR radiation can be applied for IR sensors.

• Proceedings of the Korean Vacuum Society Conference
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• 2008.02a
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• pp.126-126
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• 2008

• Macromolecular Research
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• v.17 no.7
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• pp.528-532
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• 2009

The size and shape of free volume (FV) holes available in membrane materials control the rate of gas diffusion and its permeability. Based on this principle, a segmented, thermo-sensitive polyurethane (TSPU) membrane with functional gate, i.e., the ability to sense and respond to external thermo-stimuli, was synthesized. This smart membrane exhibited close-open characteristics to the size of the FV hole and water vapor permeation and thus can be used as smart food packaging materials. Differential scanning calorimetry (DSC), dynamic mechanical analysis (DMA), positron annihilation lifetimes (PAL) and water vapor permeability (WVP) were used to evaluate how the morphological structure of TSPU and the temperature influence the FV holes size. In DSC and DMA studies, TSPU with a crystalline transition reversible phase showed an obvious phase-separated structure and a phase transition temperature at $53^{\circ}C$ (defined as the switch temperature and used as a functional gate). Moreover, the switch temperature ($T_s$) and the thermal-sensitivity of TSPU remained available after two or three thermal cyclic processes. The PAL study indicated that the FV hole size of TSPU is closely related to the $T_s$. When the temperature varied cyclically from $T_s-10{\circ}C$ to $T_s+10^{\circ}C$, the average radius (R) of the FV holes of the TSPU membrane also shifted cyclically from 0.23 to 0.467 nm, exhibiting an "open-close" feature. As a result, the WVP of the TSPU membrane also shifted cyclically from 4.30 to $8.58\;kg/m^2{\cdot}d$, which produced an "increase-decrease" response to the thermo-stimuli. This phase transition accompanying significant changes in the FV hole size and WVP can be used to develop "smart materials" with functional gates and controllable water vapor permeation, which support the possible applications of TSPU for food packaging.

• Transactions on Electrical and Electronic Materials
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• v.16 no.2
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• pp.95-98
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• 2015

Organic polymer dielectric thin films of styrene and vinyl acetate were prepared by the plasma polymerization deposition technique and applied for the fabrication of an organic thin film transistor device. The structural properties of the plasma polymerized thin films were characterized by Fourier-transform infrared spectroscopy, X-ray diffraction, atomic force microscopy, and contact angle measurement. Investigation of the electrical properties of the plasma polymerized thin films was carried out by capacitance-voltage and current-voltage measurements. The organic thin film transistor device with gate dielectric of the plasma polymerized thin film revealed a low operation voltage of −10V and a low threshold voltage of −3V. It was confirmed that plasma polymerized thin films of styrene and vinyl acetate could be applied to functional organic thin film transistor devices as the gate dielectric.