• 한국분말재료학회지
• /
• 제10권4호
• /
• pp.241-248
• /
• 2003

Biaxially textured Ni tapes were fabricated by a cold working and recrystallization heat treatment processes from powder compact rods. The processing parameters associated with the cube texture formation in Ni tapes were systematically investigated by using X-ray diffraction and pole-figure analysis. The Ni powder used in this study was 5 $\mu$m in size and 99.99% in purity. To find the optimum sintering temperature, tensile tests were performed for Ni rods sintered at various temperatures. The Ni rods sintered at 100$0^{\circ}C$ showed poor elongation and low fracture strength, while the Wi rods sintered above 100$0^{\circ}C$ revealed good mechanical properties. The higher elongation and fracture strength of the Ni rods sintered at higher temperatures than 100$0^{\circ}C$ are attributed to the full densification of the sintered rods. The sintered Ni rods were cold-rolled with 5% reduction to the final thickness of 100 $\mu$m and then annealed for development of rube texture in rolled Ni tapes. The annealed Ni tapes depicted strong cube texture with FWHM(full-width at half-maximum) of in-plane and out-of-plane in the range of 8$^{\circ}$ to 10$^{\circ}$. The NiO deposited on the Ni tapes by MOCVD process showed good epitaxy with FWHM=10$^{\circ}$, which indicates that the Ni tapes can be used as a substrate for YBCO coated conductors.

• 마이크로전자및패키징학회지
• /
• 제15권2호
• /
• pp.1-6
• /
• 2008

고효율 녹색 인광 유기발광다이오드를 개발하기 위해 소자 구조를 ITO/2-TNATA/NPB/TCTA/CBP:$7%Ir(ppy)_3$/BCP/SFC-137/LiF/Al로 설계 제작하고 그 전계발광 특성을 평가하였다. 소자 제작에서 발광 호스트의 두께를 $150{\AA}{\sim}350{\AA}$ 범위로 변화시켜, 전계발광 특성을 비교해 본 결과, CBP두께가 약 $300{\AA}$ 부근일 때 가장 우수한 휘도 특성이 얻어졌다 전류 효율은 CBP두께가 $300{\AA}{\sim}350{\AA}$범위일 때 거의 포화되어 최대로 나타났다. $CBP(300{\AA}):7%Ir(ppy)_3-EML$ 층을 갖는 PhOLED(phosphorescent organic light emitting diode)의 전류 밀도, 휘도, 그리고 전류 효율은 10V의 인가전압에서 각각 $40mA/cm^2,\;10000cd/m^2$, 25cd/A로 나타났다. 또한 이 소자의 최대 전류효율은 $160cd/m^2$의 휘도 상태에서 40.5cd/A로 나타났다. 발광 스펙트럼은 512nm의 중심 파장과 약 60nm의 FWHM(Full Width Half Maximum)을 나타내었으며, CIE (Commission Internationale de I'Eclairage)도표 상에서 색 좌표는 (0.28,0.63)으로 나타났다.

• Journal of Electrical Engineering and Technology
• /
• 제11권6호
• /
• pp.1880-1885
• /
• 2016

This study aims to design a zonal lumen for parking garage LED lightings of a slim appearance and 20 W/2,000 lm capacity and to fabricate a lighting luminaire accordingly. The frame is of a one-dimensional bar type with a reverse V-shaped section, with LED chips arranged along both sides. To maximize the $60^{\circ}$ to $80^{\circ}$ zonal lumen, the geometric structure was designed with the apex of the reverse V-shaped section at $40^{\circ}$ and both sides at $70^{\circ}$. As for the LED light source, focusing lenses with narrower full-width half-maximum (FWHM) in luminous intensity were used. A ray-tracing simulation method was utilized for the zonal lumen simulation of the given structure. An actual hardware of luminaire based on the simulation results was fabricated and characterized. The suggested model is meant to develop LED lightings with a proper level of zonal lumen required in parking garages.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 하계학술대회 논문집
• /
• pp.848-850
• /
• 2001

In this work, we investigated on the white-colored ribbon fiber synthesized from GaN powder. We convinced the formation of monoclinic phase $\beta$-Ga$_2$O$_3$from the X-ray diffraction pattern on ribbon fiber. The 10 K PL spectrum consisted with the strong emission band caused by self-activated optical center at 3.464 eV with the full-width at half maximum of 48 meV and the impurity related emission bands. Through this work, the optical properties and the electrical conductivity of $\beta$-Ga$_2$O$_3$, it will be useful for the fabrication of optoelctronic devices operating in visible spectrum region.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
• /
• pp.484-487
• /
• 2001

Amorphous carbon thin films were deposited using laser ablation technique on Si(100) substrates at different temperatures. In this study, effects of the substrate temperature on the properties of amorphous carbor, films were systematically investigated. The surface morphologic and structural properties of the films were studied by scanning electron microscopy (SEM) and raman spectroscope, respectively. With increasing of the substrate temperature, the surface morphologies were changed significantly. Moreover the intensity ratio of D-band and G-band and the full width at half maximum of these bands were dependent on substrate temperatures.

• KIEE International Transactions on Electrophysics and Applications
• /
• 제5C권1호
• /
• pp.39-43
• /
• 2005

We proposed a structure for a 1.55 ㎛ strained separate confinement heterostructure (SCH) multi- quantum well (MQW) superluminescent diode (SLD), having a tapered active region. SLD was fabricated through a two-step procedure: the first step being metal organic chemical vapor deposition (MOCVD) and the second-step being liquid phase epitaxy (LPE). We used a 15 laterally tilted stripe and window region to suppress the lasing action of the SLD. The performance of the SLD showed output power of 11 mW with no lasing under 200 mA pulse driving. The full-width at half-maximum was 42 nm at 200 mA, 25℃.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1996년도 추계학술대회 논문집
• /
• pp.37-39
• /
• 1996

A hydride vapor phase epitaxy (HVPE) method was performed to prepare the GaN thick-films on c-plane sapphire substrates. The full-width at half maximum of double crystal X-ray rocking curve from 350${\mu}{\textrm}{m}$ thick GaN was 576 arcsecond. The photo- luminescence spectrum measured (at room temperature) show the narrow bound exciton(I$_2$) line and weak donor-acceptor pair recombination peak, however, there was not observed deep donor-acceptor pare recombination indicate the GaN crystals prepared in this study are of high purity and high crystalline quality.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 기술교육전문연구회
• /
• pp.31-34
• /
• 2003

The sapphire wafers for blue light emitting devices were manufactured by the implementation of the surface machining technology based on micro-tribology. This process has been performed by chemical and mechanical polishing(CMP) process. The sapphire crystalline wafers were characterized by double crystal X-ray diffraction. The sample quality of sapphire crystalline wafer at surfaces has a full width at half maximum 89 arcses. The surfaces of sapphire wafers were mechanically affected by residual stress and surface default. Sapphire wafers's waveness has higher abrasion rate in the edge of the wafer than its center due to Newton's Ring interference.

• Journal of Magnetics
• /
• 제12권4호
• /
• pp.141-143
• /
• 2007

We have fabricated (0001) oriented hexagonal $HoMnO_3$ thin films with thickness of 300 nm using Pulsed Laser Deposition (PLD) technique on $Pt(111)/Ti/SiO_2/Si$ substrates. The XRD $\theta-2\theta$ pattern shows only (0002), (0004), and (0008) reflection of a hexagonal phase, and the full width at half maximum (FWHM) of (0004) peak is under $1.6^{\circ}$. The chemical state of Mn from XPS spectra of the films reveals the presence of $Mn^{3+}$ only. The temperature dependence of dielectric constant shows a weak anomaly at magnetic $N\acute{e}el$ temperature $(T_N)$, which is about 70 K.

• 대한기계학회논문집A
• /
• 제28권1호
• /
• pp.85-91
• /
• 2004

The sapphire wafers for blue light emitting devices were manufactured by the implementation of the surface machining technology based on micro-tribology. This process has been performed by chemical and mechanical polishing process. The sapphire crystalline wafers were characterized by double crystal X-ray diffraction. The sample quality of sapphire crystalline wafer at surfaces has a full width at half maximum of 89 arcsec. The surfaces of sapphire wafer were mechanically affected by residual stress during the polishing process. The wave pattern of optical interference of sapphire wafer implies higher abrasion rate in the edge of the wafer than its center from the Newton's ring.