• Transactions of the Society of Information Storage Systems
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• v.2 no.1
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• pp.1-6
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• 2006

An optical ROM card system which using an optical probe array generated by Talbot effect was proposed as new robust storage solution. To improve the optical density and to decrease the power consumption of the system, it is very important to make the spot sizes of optical probes smaller as well as to increase the optical efficiency from the light source to optical probes. In this study, a microlens illuminated aperture array for generating high efficiency optical probe away with small beam spot was designed and fabricated using monolithic lithography integration method. The maximum intensity of optical probes of microlens illuminated aperture array increased about 12 times of that of aperture array, and the full width half maximum of the optical probe at Talbot plane generated by microlens illuminated aperture array was $0.77{\mu}m$.

• Journal of electromagnetic engineering and science
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• v.14 no.3
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• pp.314-316
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• 2014

This letter presents two types of metamaterial-inspired absorbers adopting resistive trumpet structures at the X band. The unit cell of the first type is composed of a trumpet-shaped resonator loading a chip resistor, a metallic back plane, and a FR4 (${\varepsilon}_r=4.4-j0.02$) substrate between them (single-layer). The absorption rate is 99.5% at 13.3 GHz. The full width at half maximum (FWHM) is 95 % at 11.2 GHz (from 5.9 to 16.5 GHz). The size of unit cell is $5.6{\times}5.6{\times}2.4mm^3$. The second type has been optimized with a $7{\Omega}$/square uniform resistive coating, removing the chip resistors but leading to results comparable to the first type. The proposed absorbers are almost insensitive to polarizations of incident waves due to symmetric geometry.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.2
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• pp.81-92
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• 1990

We developed the technologies of wuperlattice and HEMT structures grown by MOCVD, and their characterization. In the case of GaAs/AlGaAs superlattice, the periodicity, interface abruptness and Al compositional uniformity were confirmed through the shallow angle lapping technique and double crystal x-ray measurement. Photoluminesence spectra due to quantum size effect of isolated quantum wells were also observed. The heterojunction abruptness was estimated to be within 1 monolayer fluctuation by the analysis of the relation between PL FWHM(Full Width at Half Maximum) and well width. HEMT structure was successfully grown by MOCVD. The 2 dimensional electron gas formation at heterointerface in HEMT structure were evidenced through the C-V profile, SdH (Shubnikov-de Haas)oscillation and low temperature Hall measurement. Low field mobility were as high as $69,000cm^2/v.sec$ for a sheet carrier density of $5.5{\times}10^{11}cm^-2$ at 15K, and $41,200cm^2/v.sec$ for a sheet carrier density of $6.6{\times}10^{11}cm^-2$ at 77K. In addition, well defined SdH oscillation and quantized Hall plateaues were observed.

• Elastomers and Composites
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• v.55 no.1
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• pp.20-25
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• 2020

The effect of the isocyanate index (NCO index) on the particle size and particle size distribution of a waterborne polyurethane dispersion (WPUD) with polycarbonate-diol was determined. The WPUDs were prepared using a conventional acetone process with polycarbonate-polyol (M_n = 2028), 4,4'-methylenebis(cyclohexyl isocyanate) (H₁₂MDI), 2,2-bis(hydroxymethyl) propionic acid (DMPA), and dibutyltin dilaurate catalyst. At NCO index values below 1.5, the number average particle diameter of the WPUDs significantly increased with the NCO index, whereas the particle diameter slightly varied at higher NCO indexes. The dependency of the WPUD viscosity on the NCO index exhibited similar behavior to that of the particle size. The relative values of the full width at half maximum of the WPUD particle distribution curves at various NCO indexes were not influenced by the NCO index.

• Journal of The Korean Astronomical Society
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• v.48 no.6
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• pp.325-331
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• 2015

We study an association between the duration of solar activity and characteristics of the latitude distribution of sunspots by means of center-of-latitude (COL) of sunspots observed during the period from 1878 to 2008 spanning solar cycles 12 to 23. We first calculate COL by taking the area-weighted mean latitude of sunspots for each calendar month to determine the latitudinal distribution of COL of sunspots appearing in the long and short cycles separately. The data set for the long solar cycles consists of the solar cycles 12, 13, 14, 20, and 23. The short solar cycles include the solar cycles 15, 16, 17, 18, 19, 21, and 22. We then fit a double Gaussian function to compare properties of the latitudinal distribution resulting from the two data sets. Our main findings are as follows: (1) The main component of the double Gaussian function does not show any significant change in the central position and in the full-width-at-half-maximum (FWHM), except in the amplitude. They are all centered at ~ 11° with FWHM of ~ 5°. (2) The secondary component of the double Gaussian function at higher latitudes seems to differ in that even though their width remains fixed at ~ 4°, their central position peaks at ~ 22.1° for the short cycles and at ~ 20.7° for the long cycles with quite small errors. (3) No significant correlation could be established between the duration of an individual cycle and the parameters of the double Gaussian. Finally, we conclude by briefly discussing the implications of these findings on the issue of the cycle 4 concerning a lost cycle.

• Nuclear Engineering and Technology
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• v.55 no.3
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• pp.1052-1060
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• 2023

The airborne radiation monitoring has been used in geophysics for more than forty years and now it also has its important role in emergency monitoring. The aircraft background and the cosmic gamma-rays contribute to the measured gamma spectrum on the aircraft board. This adverse effect should be eliminated before the data processing. The paper describes two semiparametric methods to estimate the full spectrum aircraft background and cosmic gamma-ray contribution from spectra measured at altitudes where terrestrial contribution is negligible. The methods only assume to know possible peak positions in spectra and their full width at half maximum, that can be easily obtained e.g. from terrestrial measurement. The methods were applied to real experimental data acquired on Mi-17 and Bell 412 helicopter boards. The IRIS airborne gamma-ray spectrometer, with 4×4 L NaI(Tl) crystals, produced by Pico Envirotec Inc., Canada, was used on helicopters' boards. To obtain valid estimate of the aircraft background and the cosmic contribution, the measurements over sea and large water areas were carried out. However, the satisfactory results over inland were also achieved comparing with those acquired over large water areas.

• Journal of Sensor Science and Technology
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• v.13 no.4
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• pp.277-281
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• 2004

$Hg_{1-x}Cd_{x}Te$ (MCT) was grown by hot wall epitaxy. Prior to the MCT growth, the CdTe (111) buffer layer was grown on the GaAs substrate at the temperature of $590^{\circ}C$ for 15 min. When the thickness of the CdTe buffer layer was $5{\mu}m$ or thicker, the full width at half maximum values obtained from the x-ray rocking curves were found to significantly decrease. After a good quality CdTe buffer layer was grown, the MCT epilayers were grown on the CdTe (111)/GaAs substrate at various temperatures in situ. The crystal quality for those epilayers was investigated by means of the x-ray rocking curves and the photocurrent experiment. The photoconductor characterization for the epilayers was also measured. The energy band gap of MCT was determined from the photocurrent measurement and the x composition rates from the temperature dependence of the energy band gap were turned out.

• Korean Journal of Materials Research
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• v.9 no.1
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• pp.99-103
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• 1999

We investigated the crystalline behavior in active ion implanted silicon through Raman spectroscopy. Four a-Si(amorphous Si) peaks were observed that are related to the ion implantation induced a-Si layer. After the isochronical anneal(30min). and isothermal anneal($450^{\circ}C$), noticeable recovery of crystalline-Si peak at 519cm\ulcorner and peak center shift of the a-Si TO from 465cm\ulcorner to 480cm\ulcorner were observed by RNM(Random Network Model). By applying RNM and SCLM(Spatial Correlation Length Model), the peak center and FWHM(the Full Width at half Maximum) of a-Si were changed dramatically between T\ulcorner=$200^{\circ}C$ and 30$0^{\circ}C$. From the results, it can be said that there is an abrupt structural change at this temperature region.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.152-152
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• 2003

Hg$\sub$l-x/Cd$\sub$x/Te (MCT) was grown by hot wall epitaxy. Prior to the MCT growth, the CdTe (111) buffer layer was grown on the GaAs substrate at the temperature of 590$^{\circ}C$ for 15 min. When the thickness of the CdTe buffer layer was 5 $\mu\textrm{m}$ or thicker, the full width at half maximum values obtained from the x-ray rocking curves were found to significantly decrease. After a good quality CdTe buffer layer was grown, the MCT epilayers were grown on the CdTe (111) /GaAs substrate at various temperatures in situ. The crystal quality for those epilayers was investigated by means of the x-ray rocking curves and the photocurrent experiment The photoconductor characterization for the epilayers was also measured The energy band gap of MCT was determined from the photocurrent measurement and the x composition rates from the temperature dependence of the energy band gap were turned out

• Journal of Advanced Marine Engineering and Technology
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• v.25 no.6
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• pp.1272-1280
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• 2001

SrS:Ce thin films for blue EL devices were prepared by Hot Wall Method and their crystallographic and optical characteristics were investigated by various methods. Deposition rates were increased with SrS cell temperature, but the rates were independent on substrate temperature and sulfur pressure. The optical and crystallographic characteristics were strongly affected by deposition rates. The band gap energies obtained by optical transmission spectra and Full Width at Half Maximum of (200) plane in X-ray diffraction patterns were found at 4.5-4.6eV and $0.22~0.26^{\circ}$, respectively. The photoluminescence from SrS:Ce thin tiles showed a greenish blue omission peaked at 470 and 540nm.