• Journal of the Korean institute of surface engineering
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• v.49 no.1
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• pp.54-61
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• 2016

Screen printing of commercially available Ag paste is the most widely used method for the front side metallization of Si solar cells. However, the metallization using Ag paste is expensive and needs high temperature annealing for reliable contact. Among many metallization schemes, Ni/Cu/Sn plating is one of the most promising methods due to low contact resistance and mass production, resulting in high efficiency and low production cost. Ni layer serves as a barrier which would prevent copper atoms from diffusion into the silicon substrate. However, Ni based schemes by electroless deposition usually have low thermal stability, and require high annealing process due to phosphorus content in the Ni based films. These problems can be resolved by adding W element in Ni-based film. In this study, Ni-W-P alloys were formed by electroless plating and properties of it such as sheet resistance, resistivity, specific contact resistivity, crystallinity, and morphology were investigated before and after annealing process by means of transmission line method (TLM), 4-point probe, X-ray diffraction (XRD), and Scanning Electron Microscopy (SEM).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.3
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• pp.246-251
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• 2013

Screen printing is commonly used to form the front/back electrodes in silicon solar cell. But it has caused high resistance and low aspect ratio, resulting in decreased conversion efficiency in solar cell. Recently the plating method has been combined with screen-printed c-Si solar cell to reduce the resistance and improve the aspect ratio. In this paper, we investigated the effect of light induced silver plating with screen-printed c-Si solar cells and compared their electrical properties. All wafers were textured, doped, and coated with anti-reflection layer. The metallization process was carried out with screen-printing, followed by co-fired. Then we performed light induced Ag plating by changing the plating time in the range of 20 sec~5min with/without external light. For comparison, we measured the light I-V characteristics and electrode width by optical microscope. During plating, silver ions fill the porous structure established in rapid silver particle sintering during co-firing step, which results in resistance decrease and efficiency improvement. The plating rate was increased in presence of light lamp, resulting in widening the electrode with and reducing the short-circuit current by shadowing loss. With the optimized plating condition, the conversion efficiency of solar cells was increased by 0.4% due to decreased series resistance. Finally we obtained the short-circuit current of 8.66 A, open-circuit voltage of 0.632 V, fill factor of 78.2%, and efficiency of 17.8% on a silicon solar cell.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.141-141
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• 2010

The effect of thermal anneal on the characteristics of structural properties and the enhancement of luminescence and photovoltaic (PV) characteristics of silicon-rich silicon-nitride films were investigated. By using an ultra high vacuum ion beam sputtering deposition, B-doped silicon-rich silicon-nitride (SRSN) thin films, with excess silicon content of 15 at. %, on P-doped (n-type) Si substrate was fabricated, sputtering a highly B doped Si wafer with a BN chip by N plasma. In order to examine the influence of thermal anneal, films were then annealed at different temperature up to $1100^{\circ}C$ under $N_2$ environment. Raman, X-ray diffraction, and X-ray photoemission spectroscopy did not show any reliable evidence of amorphous or crystalline Si clusters allowing us concluding that nearly no Si nano-cluster could be formed through the precipitation of excess Si from SRSN matrix during thermal anneal. Instead, results of Fourier transform infrared and X-ray photoemission spectroscopy clearly indicated that defective, amorphous Si-N matrix of films was changed to be well-ordered thanks to high temperature anneal. The measurement of spectral ellipsometry in UV-visible range was carried out and we found that the optical absorption edge of film was shifted to higher energy as the anneal temperature increased as the results of thermal anneal induced formation of $Si_3N_4$-like matrix. These are consistent with the observation that higher visible photoluminescence, which is likely due to the presence of Si-N bonds, from anneals at higher temperature. Based on these films, PV cells were fabricated by the formation of front/back metal electrodes. For all cells, typical I-V characteristic of p-n diode junction was observed. We also tried to measure PV properties using a solar-simulator and confirmed successful operation of PV devices. Carrier transport mechanism depending on anneal temperature and the implication of PV cells based on SRSN films were also discussed.

• Korean Journal of Optics and Photonics
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• v.12 no.2
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• pp.103-108
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• 2001

In this paper, we designed and made the scanned point detecting system for 3-dimensional measurement of the light emitted from plasma display panel (PDP) , and we measured and analyzed 3-dimensional light emitted from a real PDP by using this scanned point detecting system. The scanned point detecting system has a point detector with a pinhole. The light emitted from the source at the in-focus position can pass through the pinhole and be collected by detector. The light from other sources at outof-focus positions is focused at points in front of or behind the pinhole, and thus it is intercepted by the pinhole. Therefore, we can detect light information from a particular point of a PDP cell of 3-dimensional structure. We know the electric field distribution inside the PDP cell from the 3-dimensionallight intensity distribution measured by using the scanned point detecting system. As the Z axial measurement increases, the intensity of light detected increases and intensity of light detected on the inside edge of the ITa electrode is larger than outside edge of the ITa eletrode and gap of the ITa electrodes. Also, as the measurement point moves from one barrier rib to another, the detected light is weaker near to the barrier ribs than at the center between the barrier ribs. The emitted light is concentrated at the center between barrier ribs. ribs.

• Korean Journal of Applied Biomechanics
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• v.16 no.3
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• pp.137-148
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• 2006

The purpose of this study was to compare muscle activity in the lower extremity during walking wearing jogging and roller shoes. Twelve male middle school students (age: 15.0 yrs, height 173.7 cm, weight 587.7 N) who have no known musculoskeletal disorders were recruited as the subjects. Seven pairs of surface electrodes (QEMG8, Laxtha Korea, gain = 1,000, input impedance >$1012{\Omega}$, CMMR >100 dB) were attached to the right-hand side of the body to monitor the rectus femoris (RF), vastus medialis (VM), vastus lateralis (VL), biceps femoris (BF), tibialis anterior (TA), and medial (GM) and lateral gastrocnemius (GL) while subjects walked wearing roller and jogging shoes in random order at a speed of 1.1 m/s. An event sync unit with a bright LED light was used to synchronize the video and EMG recordings. EMG data were filtered using a 10 Hz to 350 Hz Butterworth band-passdigital filter and further normalized to the respective maximum voluntary isometric contraction EMG levels. For each trial being analyzed, five critical instants and four phases were identified from the recording. Averaged IEMG and peak IEMG were determined for each trial. For each dependent variable, paired t-test was performed to test if significant difference existed between shoe conditions (p<.05). The VM, TA, BF, and GM activities during the initial double limb stance and the initial single limb stance reduced significantly when going from jogging shoe to roller shoe condition. The decrease in EMG levels in those muscles indicated that the subjects locked the ankle and knee joints in an awkward fashion to compensate for the imbalance. Muscle activity in the GM for the roller shoe condition was significantly greater than the corresponding value for the jogging shoe condition during the terminal double limb stance and the terminal single limb stance. Because the subjects tried to keep their upper body weight in front of the hip to prevent falling backward, the GM activity for the roller shoe condition increased. It seems that there are differences in muscle activity between roller shoe and jogging shoe conditions. The differences in EMG pattern may be caused primarily by the altered position of ankle, knee, and center of mass throughout the walking cycle. Future studies should examine joint kinematics during walking with roller shoes.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.8
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• pp.461-465
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• 2016

n-type silicon shows the better tolerance towards metal impurities with a higher minority carrier lifetime compared to p-type silicon substrate. Due to better lifetime stability as compared to p-type during illumination made the photovoltaic community to switch toward n-type wafers for high efficiency silicon solar cells. We fabricated the front electrode of the n-type solar cell with AgAl paste. The electrodes characteristics of the AgAl paste depend on the contact junction depth that is closely related to the firing temperature. Metal contact depth with p+ emitter, with optimized depth is important as it influence the resistance. In this study, we optimize the firing condition for the effective formation of the metal depth by varying the firing condition. The firing was carried out at temperatures below $670^{\circ}C$ with low contact depth and high contact resistance. It was noted that the contact resistance was reduced with the increase of firing temperature. The contact resistance of $5.99m{\Omega}cm^2$ was shown for the optimum firing temperature of $865^{\circ}C$. Over $900^{\circ}C$, contact junction is bonded to the Si through the emitter, resulting the contact resistance to shunt. we obtained photovoltaic parameter such as fill factor of 76.68%, short-circuit current of $40.2mA/cm^2$, open-circuit voltage of 620 mV and convert efficiency of 19.11%.

• Geophysics and Geophysical Exploration
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• v.10 no.4
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• pp.353-360
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• 2007

We practiced fresh water injection test to identify its applibility as a method of seawater intrusion mitigation technique, and monitored the change of borehole fluid conductivity and the behavior of injected fresh water using borehole multichannel electrical conductivity monitoring and well-logging, and DC resistivity and SP monitoring at the surface. Well-logging and multichannel EC monitoring showed the decrease of fluid conductivity due to fresh water injection. We note that such an injection effect lasts more than several month which means the applibility of fresh water injection as a seawater intrusion control technique. Although SP monitoring did not show meaningful results because of weather condition during monitoring and the defects of electrodes due to long operation time, DC resistivity monitoring showed its effectiveness and applicability as a monitoring and assessment techniques of injection test by means of imaging the behavior and the front of fresh water body in terms of the increase of resistivity with reasonable resolution. In conclusion, we note that geophysical techniques can be an effective method of monitoring and evaluation of fresh water injection test, and expect that fresh water injection may be an practical method for the mitigation of seawater intrusion when applied with optimal design of injection well distribution and injection rate based on geophysical evaluation.

• Current Photovoltaic Research
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• v.9 no.3
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• pp.75-83
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• 2021

The tunnel oxide passivated contact (TOPCon) structure got more consideration for development of high performance solar cells by the introduction of a tunnel oxide layer between the substrate and poly-Si is best for attaining interface passivation. The quality of passivation of the tunnel oxide layer clearly depends on the bond of SiO in the tunnel oxide layer, which is affected by the subsequent annealing and the tunnel oxide layer was formed in the suboxide region (SiO, Si₂O, Si₂O₃) at the interface with the substrate. In the suboxide region, an oxygen-rich bond is formed as a result of subsequent annealing that also improves the quality of passivation. To control the surface morphology, annealing profile, and acceleration rate, an oxide tunnel junction structure with a passivation characteristic of 700 mV or more (V_oc) on a p-type wafer could achieved. The quality of passivation of samples subjected to RTP annealing at temperatures above 900℃ declined rapidly. To improve the quality of passivation of the tunnel oxide layer, the physical properties and thermal stability of the thin layer must be considered. TOPCon silicon solar cell has a boron diffused front emitter, a tunnel-SiO_x/n⁺-poly-Si/SiN_x:H structure at the rear side, and screen-printed electrodes on both sides. The saturation currents J_o of this structure on polished surface is 1.3 fA/cm² and for textured silicon surfaces is 3.7 fA/cm² before printing the silver contacts. After printing the Ag contacts, the J_o of this structure increases to 50.7 fA/cm² on textured silicon surfaces, which is still manageably less for metal contacts. This structure was applied to TOPCon solar cells, resulting in a median efficiency of 23.91%, and a highest efficiency of 24.58%, independently. The conversion efficiency of interdigitated back-contact solar cells has reached up to 26% by enhancing the optoelectrical properties for both-sides-contacted of the cells.