• JSTS:Journal of Semiconductor Technology and Science
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• 제14권5호
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• pp.537-542
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• 2014

The three-dimensional (3-D) NAND flash structure with fully charge storage using edge fringing field effect is presented, and its programming characteristic is evaluated. We successfully confirmed that this structure using fringing field effect provides good program characteristics showing sufficient threshold voltage ($V_T$) margin by technology computer-aided design (TCAD) simulation. From the simulation results, we expect that program speed characteristics of proposed structure have competitive compared to other 3D NAND flash structure. Moreover, it is estimated that this structural feature using edge fringing field effect gives better design scalability compared to the conventional 3D NAND flash structures by scaling of the hole size for the vertical channel. As a result, the proposed structure is one of the candidates of Terabit 3D vertical NAND flash cell with lower bit cost and design scalability.

• 한국정밀공학회지
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• 제18권10호
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• pp.93-100
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• 2001

The analysis and control of a new type unsymmetrical slotted self-bearing step motor for small angle control is presented. The motor actuator is used for both motor and bearing functionality without any additional coil windings or electromagnets for bearing functionality. A circular-arc, straight-line permeance model for the fringing effect is presented. An unsymmetrical slotted self-bearing step motor layout and control algorithm are described. A new control current generation method using the electromagnets layout geometry, which needs no additional current for bearing functionality, is proposed. As the result of this analysis the fringing effect largely influences on the system characteristics. especially in torque. Even if the bearing functionality is added into the motor functionality, it is shown that the magnitude of torque is not changed.

• 한국소음진동공학회논문집
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• 제21권2호
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• pp.99-105
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• 2011

The magnetic circuit analysis excluding flux loss and fringing effect often gives a result with unignorable error, when compared with real system. But, it is not easy to make a complete magnetic circuit model with the loss effects. This paper introduces a relatively simple method to build the model including the flux loss and fringing effect, in which the paths of leaked flux are simplified in terms of circular arcs and straight lines. After modification of the model, the error of about 36 % in maximum between the magnetic circuit analysis and FEM analysis is reduced to about 7 %.

• 한국진공학회지
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• 제5권4호
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• pp.278-283
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• 1996

Field terminator를 이용하여 singl path cylindrical mirror analyser를 제작하였다. 먼저 컴퓨터 모의실험을 바탕으로 CMA의 원통형 전극양단에서 fringing field effect를 최소로 하여 log-scale의 등전위면을 그대로 유지하는 terminator의 전압비와 위치 등을 구하였다. 계산된 전압을 직렬로 연결된 금속산화물저항으로 만든 voltage divider로 field terminator에 직접 인가하여 CMA의 fringing field effect를 줄이는 방법으로 개발하였다. 이 방법으로 제작된 CMA의 분해능이 $\Delta$E/E=0.4% 이상임을 확인하였다.

• 조명전기설비학회논문지
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• 제28권11호
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• pp.93-99
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• 2014

The method of moments is applied to numerically compute the electrostatic capacitance of a parallel-plate rectangular capacitor of finite area. Each plate is discretized into 900 patches per unit area to ensure a high accuracy of computation. To further enhance computational results, the impedance matrix elements are additionally evaluated in the case that the observation patch is located above or below the source patch in the vertical direction. To examine the fringing effect at the edges of the capacitor, the normalized capacitances are computed as a function of separation distance. After these results have been verified by Palmer's formula, this method is extended to the computation of capacitances between two different size plates.

• Journal of Electrical Engineering and Technology
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• 제9권4호
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• pp.1343-1348
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• 2014

The low frequency noise in Silicon Nanowire Field Effect Transistors is analyzed by characterizing the gate electrode dependence on various geometrical parameters. It shows that gate electrodes have a strong impact in the flicker noise of Silicon Nanowire Field effect transistors. Optimization of gate electrode was done by comparing different performance metrics such a DIBL, SS, $I_{on}/I_{off}$ and fringing capacitance using TCAD simulations. Molybdenum based gate electrode showed significant improvement in terms of high drive current, Low DIBL and high $I_{on}/I_{off}$. The noise power sepctral density is reduced by characterizing the device at higher frequencies. Silicon Nanowire with Si3N4 spacer decreases the drain current spectral density which interms reduces the fringing fields there by decreasing the flicker noise.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2011년도 제42회 하계학술대회
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• pp.101-102
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• 2011

The attraction force is an important parameter for permanent-magnet(PM) linear machines. This paper aims to analysis lumped magnetic circuit model of a magnetic levitation system. It accounts for the fringing effect and leakage flux which may greatly affect the accuracy of the analytical model for the optimal lumped magnetic circuit model. consequentially it will be able to apply to prospective permanent-magnet(PM) linear machines for accurate analysis.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2012년도 추계학술대회
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• pp.561-563
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• 2012

In this work, tunable capacitors using a finger-type electrode are designed and characterized for frequency-agile RF circuit applications. Their top electrodes with different area and line width are designed in types of the finger for a long conducting perimeter which results in enhanced fringing-electric fields in order to improve their tunability. The tunable varactors were fabricated on a quartz substrate employing a multi-layer dielectric of a para/ferro/para-electric thin film. Compared to the conventional capacitor, finger-type capacitors are characterized in terms of effective capacitance and tunablility. Their effective capacitance and tunability with the long perimeter increase 24~40% and 7~12%, respectively, due to enhanced fringing electric fields from 1 to 2.5 GHz, compared to the conventional ones.

• 한국전자파학회논문지
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• 제17권10호
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• pp.935-942
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• 2006

본 논문에서는 직렬 커패시터를 넓은 면 결합 SSS로 구현하는 새로운 이론이 제안되었다. 제안된 이론은 기모드 해석 방법만이 적용되었기 때문에 비교적 단순하지만 선로의 프린징 전자장 영향에 의한 유효 선로 폭과 선로 끝 효과를 고려함으로서 신뢰할 만한 결과를 제공한다. 이상적인 집중 소자 커패시터와 결합 선로 커패시터의 특성을 비교, 분석하기 위해 시뮬레이션 결과가 제시되었다. 또한 제안한 이론을 근거로 하여 커패시티브갭 결합 선로 대역 통과 필터가 설계 및 제작되었고, 그 결과로부터 이론의 타당성이 검증되었다.

• Journal of Electrical Engineering and Technology
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• 제10권3호
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• pp.990-1001
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• 2015

This paper presents analysis of Switched Reluctance Machine (SRM) using Geometry Based Analytical Model (GBAM), Finite Element Analysis (FEA) and Fourier Series Model (FSM) with curve fitting technique. Further a Transient Analysis (TA) technique is proposed to corroborate the analysis. The main aim of this paper is to give in depth procedure in developing a Geometry Based Analytical Model of Switched Reluctance Machine which is very accurate and simple. The GBAM is developed for the specifications obtained from the manufacturer and magnetizing characteristic of the material used for the construction. Precise values of the parameters like Magneto Motive Force (MMF), flux linkage, inductance and torque are obtained for various rotor positions taking into account the Fringing Effect (FE). The FEA model is developed using MagNet7.1.1 for the same machine geometry used in GBAM and the results are compared with GBAM. Further another analytical model called Fourier Series Model is developed to justify the accuracy of the results obtained by the methods GBAM and FEA model. A prototype of microcontroller based SRM drive system is constructed for validating the analysis and the results are reported.