• Title/Summary/Keyword: fringe field switching mode

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New Edge Structure of a Pixel Electrode for Improving the Transmittance of the Fringe Field Switching(FFS) Mode LCD (FFS모드의 투과율 향상을 위한 새로운 화소전극 구조제안)

  • Lee, Won-Jun;Park, Woo-Sang
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.11
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    • pp.983-990
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    • 2007
  • In this study, we propose a new pixel edge shape of the fringe field switching(FFS) mode which ensures more stable movement of liquid crystal molecules and higher transmittance at the edge part. the electro optical properties were calculated 3-dimensionally using by commercially available "Techwiz LCD". From the simulation results, we showed that the dynamic stability of liquid crystal molecules was obtained in a new pixel structure. We also revealed that the transmittance of the new pixel structure increased more than 6 % compared to that of the conventional pixel structure.

A Novel Transflective Homogeneously Aligned Liquid Crystal Display Driven by Fringe-Field (Fringe-Field 구동형 새로운 반투과형 수평 배향 액정 디스플레이)

  • 정태봉;이승희
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.6
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    • pp.501-509
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    • 2003
  • We have designed transflective liquid crystal display(LCD) associated with in-plane switching of a LC director driven by fringe-field, unlike other LCD mode. Reflective area consists of a λ/2 compensation film and a LC cell with retardation value(dΔn) of λ/4 with their optic axes making an angle of 15$^{\circ}$ and 75$^{\circ}$ against polarizer, respectively. In the transmissive area, top and bottom polarizers are parallel each other, an LC has a dΔn of λ/2, and another λ/2 compensation film is inserted between the LC cell and bottom polarizer. With the configuration, both devices show dark state initially. When an incident light is 550nm, the device shows wide-viewing-angle characteristics such that in the reflective area the contrast ratio target than 5 exists up to 55$^{\circ}$ of polar angle in all directions and in transmissive area it exists about 100$^{\circ}$ in vortical direction and 110$^{\circ}$ in horizontal direction.

Liquid Crystal Device Associated with Fringe-field Driven Vertically Aligned Optically Compensated Splay (OCS) (프린지 필드에 의해 구동되는 수직 배향된 광학적 자기 보상 스플레이 액정 소자)

  • Jung, B.S.;Kim, S.J.;Oh, S.M.;Kim, H.Y.;Lee, S.H.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.05a
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    • pp.157-160
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    • 2004
  • We have studied an optically compensated splay (OCS) mode driven by fringe electric field. The OCS LC configuration obtained by applying voltage to vertically aligned LCs shows a dark state when an optic axis of the OCS cell coincides with one of crossed polarizer axis. When the fringe electric field is applied, the LC director rotates in plane above whole electrode surface, giving rise to high transmittance and wide viewing angle simultaneously.

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A Study on Electro-Optical Characteristics of the Ion Beam Aligned FFS Cell on the Inorganic Thin Film (무기 박막을 이용한 이온빔 배향 FFS 셀의 전기광학특성에 관한 연구)

  • Hwang, Jeoung-Yeon;Park, Chang-Joon;Jeong, Youn-Hak;Ahn, Han-Jin;Baik, Hong-Koo;Seo, Dae-Shik
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.05a
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    • pp.94-97
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    • 2004
  • In this paper, we investigate fringe-field switching (FFS) mode cell by the ion beam (IB) alignment method on the a-C:H thin film, to analyze electro-optical characteristics in this cell. We studied on the suitable inorganic thin film for fringe-field switching (FFS) cell and the aligning capabilities of nematic liquid crystal (NLC) using the new alignment material of a-C:H thin film An excellent voltage-transmittance (V-T) and response time curve of the IB-aligned FFS-LCD was observed with oblique IB exposure on the DLC thin films. Also, AC V-T hysteresis characteristics of the IB-aligned FFS-LCD with IB exposure on the DLC thin films is almost the same as that of the rubbing-aligned FFS cell on a polyimide (PI) surface.

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Study on Retardation Value of Fringe-Field Driven Homogeneously Aligned Nematic Liquid Crystal Cell using Liquid Crystals with Positive Dielectric Anisotropy (유전율 이방성이 양인 액정을 이용한 Fringe-Field Driven 수평 배향셀의 위상지연값 연구)

  • 정송희;김향율;송성훈;이승희
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.3
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    • pp.305-310
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    • 2004
  • We have studied the optimal phase retardation value of a homogeneously aligned liquid crystal (LC) driven by fringe-field when using the LC with positive dielectric anisotropy. In general, the transmittance of a homogeneous aligned LC cell under crossed polarizer is maximum when a twist angle of LC by in-plane rotation is 45$^{\circ}$ with polarizer and the cell retardation becomes λ/2. However, the device using the LC with positive dielectric anisotropy does not follow this since the degree of rotation of the LC is dependent on electrode position and in addition the LCs tilt up along the fringe-field. At the center of common and pixel electrode, the LC is most twisted around a middle position of a cell whereas at the edge position of pixel electrode, the LC is most twisted near bottom surface of a cell. Consequently, the optimal phase retardation of the device becomes much larger than λ/2 and the transmittance can be described using the combination of the in-plane switching and twisted nematic mode.

Study on the Reverse Twist According to the Rubbing Direction for the Fringe-Field Switching (FFS) Mode (FFS 모드에서 러빙 방향에 따른 Reverse Twist 변화에 대한 연구)

  • Kim Mi Sook;Seen Seung Min;Jung Yeon Hak;Kim Hyang Yul;Kim Seo Yoon;Lee Seung Hee
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.2
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    • pp.185-188
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    • 2006
  • We studied on the reverse twist near the pixel edge depending on the rubbing direction for the fringe field switching (FFS) mode. Liquid crystal (LC) dynamic and the transmittance near the pixel edge, where the various field directions are generated, depend on the initial rubbing direction because the position of reverse twist is decided by the angle between the electric direction and the LC director at a bias voltage. For example, when the rubbing angle is $7^{\circ}$, the reverse twist appears on the bottom position of the right sharp comer of the pixel edge so that the reverse region exists far away from main active region. But, when the rubbing angle is $-7^{\circ}$, the reverse twist appears on the top position of the right sharp comer of the pixel edge, resulting that the region becomes more close to the main active area and the unstable disclination lines (DLs) easily intrude into the active region. Therefore, it is necessary to keep the reverse twist region far from the active region and it is possible by controlling the rubbing direction in the design of a pixel electrode.

Pretilt Angle Effects on Electro-Optic Characteristics of the Fringe-Field Switching (FFS) Mode

  • Hong, Seung-Ho;Lim, Kyu-Whan;Kim, Hyang-Yul;Lee, Seung-Hee
    • 한국정보디스플레이학회:학술대회논문집
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    • 2000.01a
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    • pp.43-44
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    • 2000
  • The fringe-field switching (FFS) display is known to exhibit wide-viewing-angle and high transmittance. We have simulated pretilt effects on electro-optic characteristic of the device when a liquid crystal with positive and negative dielectric anisotropy is used. The results show that asymmetry in contour of luminance and light leakage in the dark state are increased but voltage-dependent transmittance curves remain about the same, as the pretilt angle increases to $10^{\circ}$.

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Dual Domain Effect on a Rubbing Mura in a Fringe-Field Switching (FFS) Liquid Crystal Display

  • Oh, S.M.;Jeon, Y.M.;Lee, S.H.;Eom, T.Y.;KIM, H.Y.;LIM, Y.J.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07a
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    • pp.426-429
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    • 2005
  • The fringe-field switching (FFS) mode associated with a transition from a homogenously aligned to twist deformation require rubbing process. In this devices, $1^o$ of misalignment in an azimuthal direction could cause voltage-dependent transmittance (V-T) to be different from that in a normal area and consequently results in a rubbing mura. According to our studies, the single domain FFS cells are much more sensitive to the rubbing mura than the dual domain FFS cell. Moreover, the FFS cells with negative LC are much more sensitive to the rubbing mura than the FFS cells with positive LC.

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Fringe-Field Switching Transflective Displays

  • Lim, Y.J.;Choi, M.O.;Lee, S.H.;Song, J.H.;Jeong, Y.H.;Kim, H.Y.;Kim, S.Y.;Lim, Y.J.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07a
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    • pp.419-422
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    • 2005
  • We have studied transflective liquid crystal displays (LCDs) associated with fringe-field switching (FFS) mode to achieve high image quality. In the past, several cell structures were used to fabricate transflective FFS liquid crystal display s. Their structures and characteristics are carefully examined to find their merits and cons. Further, optimization of cell parameters to achieve a single driving circuit is performed.

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Study on the Effect of the Operation Voltage according to the Reverse Twist for the fringe Field Switching (FFS) Mode (FFS 모드에서 Reverse Twist가 구동전압에 미치는 영향에 관한 연구)

  • Kim, Mi-Sook;Jung, Yeon-Hak;Seen, Seung-Min;Kim, Hyang-Yul;Kim, Seo-Yoon;Lim, Young-Jin;Lee, Seung-Hee
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.11
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    • pp.1033-1037
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    • 2005
  • We have studied on the effect of the operation voltage according to the reverse twist for the different fringe field switching (FFS) structure. The FFS structure with a vertically patterned edge of the pixel electrode (VPP) has lower operation voltage comparing to the one with a horizontally patterned edge of the pixel electrode (HPP). The reason is like that the number of the pattern of the pixel edge for the VPP structure is one third comparing with the HPP structure and thus, there is small reverse twist area for the VPP structure. Actually, the reverse twist disturbs the twist of LC near adjacent active area, result that LCs near there have the unstable dynamics. That is, the operation voltage increases as the reverse twist area increases. Therefore, it is very important to design pixel electrode with a small reverse twist region for the FFS mode.