• Electrical & Electronic Materials
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• v.11 no.10
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• pp.94-99
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• 1998

Suitable replacement materials for ultrathin SiO2 in deeply scaled MOSFETs such as lattice polarizable films, which have much higherpermittivities than SiO2, have bandgaps of only 3.0 to 4.0 eV. Due to these small bandgaps, the reliability of these films as a gate insulator is a serious concern. Ramped voltage, time dependent dielectric breakdown, and hot carrier effect measurements were done on 190 layers of TiO2 which were deposited through the metal-organic chemical vapor deposition of titanium tetrakis-isopropoxide (TTIP). Measurements of the high and low frequency capacitance indicate that virtually no interface state are created during constant current injection stress. The increase in leakage upon electrical stress suggests that uncharged, near-interface states may be created in the TiO2 film near the SiO2 interfacial layer that allow a tunneling current component at low bias.

• Transactions on Electrical and Electronic Materials
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• v.4 no.3
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• pp.5-9
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• 2003

In this paper, a layout-based CMOS RF model for RFIC's including the capacitance effect, the skin effect, and the proximity effect between metal lines on the Si surface is proposed for the first time for accurately predicting the RF behavior of CMOS devices. With these RF effects, the RF equivalent circuit model based on the layout of the multi-finger gate transistor is presented. The capacitances between metal lines on the Si surface are modeled with the layout. And the skin effect is modeled to the equivalent ladder circuit of metal line. The proximity effect is modeled by adding the mutual inductance between cross-coupled inductances in the ladder circuit representation. Compared to the BSIM 3v3 and other models, the proposed RF model shows better agreements with the measured data and shows well the frequency dependent behavior of devices in GHz ranges.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.103-104
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• 2000

Voltage transfer curves have been used for analyzing the micro-discharge characteristics of cells in ac-PDP. This paper deals with the effect of working gas species, pressure and frequency of applied voltage on the micro-discharge characteristics. Using the mixture gases of He+Xe or He+Ne+Xe, wall voltage steeply varied compared with only He gas, and also voltage margin increased. Discharge voltage and voltage margin increased with increasing Xe percentage, and also wall voltage more steeply varied. In addition, the variation of effective wall capacitance which is significantly dependent on the discharge strength is discussed.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1739-1741
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• 2000

DC current density-voltage and impedance spectroscopy studies have been performed on indium-tin-oxide(ITO)/para-sexiphenyl(6p)/aluminium organic electroluminescent device. The device exhibited a blue color emission, The turn-on voltage of the device is observed at 5V from the current density-voltage measurements. The impedance spectroscopy measurements show that a resonance frequency shift with applied DC bias is observed and a single semi-circle Cole-Cole plot is confirmed. The bias-dependent bulk resistance and bias-independent bulk capacitance is observed.

• Journal of Electrical Engineering and Technology
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• v.9 no.4
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• pp.1343-1348
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• 2014

The low frequency noise in Silicon Nanowire Field Effect Transistors is analyzed by characterizing the gate electrode dependence on various geometrical parameters. It shows that gate electrodes have a strong impact in the flicker noise of Silicon Nanowire Field effect transistors. Optimization of gate electrode was done by comparing different performance metrics such a DIBL, SS, $I_{on}/I_{off}$ and fringing capacitance using TCAD simulations. Molybdenum based gate electrode showed significant improvement in terms of high drive current, Low DIBL and high $I_{on}/I_{off}$. The noise power sepctral density is reduced by characterizing the device at higher frequencies. Silicon Nanowire with Si3N4 spacer decreases the drain current spectral density which interms reduces the fringing fields there by decreasing the flicker noise.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.10
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• pp.658-664
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• 2015

This paper presents an electrical feature analysis of hysteresis curves in memristor differential and intergral control circuit. After making macro model of the memristor device, electric characteristics of the model such as time analysis, frequency dependent DC I-V curves were performed by PSPICE simulation. Also, we made a circuit of memristor-capacitor based on nano-wired memristor device and analyzed the simulated PSPICE results. Finally, we proposed a memristor based differential or integral control circuit, analyzed hysteresis curve characteristic in the control circuit.

• Bulletin of the Korean Chemical Society
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• v.28 no.9
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• pp.1463-1466
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• 2007

Single phases of multi-component oxides films, ZrTiO4 and Ta2Zr6O17, could be synthesized by using the combinatorial approach through surface sol-gel route, coating the appropriate mole ratio of 100 mM zirconium butoxide, tantalum butoxide and titanium butoxide precursors on Pt/Ti/SiO2/Si (100) substrate, following pyrolysis at 450 oC, and annealing them at 770 oC. Both the films and bulks of ZrTiO4 and Ta2Zr6O17 showed very stable dielectric properties in temperature range, ?140 to 60 oC, and frequency range, 100 Hz to 1 MHz, promising their applications in wide range of temperatures and frequencies. The dielectric constants of the films were lower and a little more dependent on frequency than those of the bulks. The reduction of dielectric property in the film was mainly due to the interfacial effects that worked as series and parallel-connected capacitances toward the substantial film capacitance.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.27 no.5
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• pp.74-80
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• 2013

This paper presents the transient behavior of the switching surge voltages generated by interruption of DC ground fault currents flowing through metal flexible conduits. All fault circuits consist of line parameters such as resistance, inductance, capacitance and conductance. The use of nonmagnetic metal conduits should be taken into account in order to reduce the inductance of battery charger distribution circuits. The frequency-dependent circuit parameters of metal flexible conduits were measured. The switching surge voltages generated at the ground fault circuit consisted of steel-galvanized alloy and aluminium conduits were investigated. As a result, the impedances of metal flexible conduits are significantly increased over the range of the frequency above 10 kHz and the switching surge voltages generated along aluminium flexible conduit are lower than those along steel-galvanized alloy conduit when DC fault current is interrupted.

• Journal of the Korean Institute of Telematics and Electronics
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• v.11 no.4
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• pp.23-28
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• 1974

One of the consistent nuisances in accurate design of circuits containing coils with core is how to take into account the frequency dependence of Q of actual coils. The conventional equivalent circuit consisting of an inductance and a series (constant) resistance and possibly a parallel (constant) capacitance is of little use in this situation since the core loss itself is strongly dependent on the frequency. In order to circumvent this difficulty, in this paper, a mathematical expression for Q of a given core as a function of inductance and frequency is first assumed and parameters in this expression are optimiged so as to best fit the data provided by the core manufacturer or obtained experimentally. This expression is then utilized in accurate calculation of the frequency response of a given circuit required in the optimal design of circuits containing coils. In other words the proposed approach is an effective combination of an approximate expression of coil's Q and circuit optimisation technique, which seems to have solved, to a great extent, the stated difficulty associated with actual coils. As for the optimization technique, ths Fletcher-Powell procedure was employed and one example was given to illustrate the proposed approach.

• Journal of Sensor Science and Technology
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• v.29 no.5
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• pp.324-327
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• 2020

The impact of output conductance (g_o) on the short-circuit current-gain cut-off frequency (f_T) in In_0.8Ga_0.2As high-electron-mobility transistors (HEMTs) on an InP substrate was investigated. An attempted was made to extract the values of f_T in a simplified small-signal model (SSM) of the HEMTs, derive an analytical formula for f_T in terms of the extrinsic model parameters of the simplified SSM, which are related to the intrinsic model parameters of a general SSM, and verify its validity for devices with L_g from 260 to 25 nm. In long-channel devices, the effect of the intrinsic output conductance (g_oi) on f_T was negligible. This was because, from the simplified SSM perspective, three model parameters, such as g_{m_ext}, C_{gs_ext} and C_{gd_ext}, were weakly dependent on g_oi. However, in short-channel devices, g_oi was found to play a significant role in degrading f_T as L_g was scaled down. The increase in g_oi in short-channel devices caused a considerable reduction in g_{m_ext} and an overall increase in the total extrinsic gate capacitance, yielding a decrease in f_T with g_oi. Finally, the results were used to infer how f_T is influenced by g_oi in HEMTs, emphasizing that improving electrostatic integrity is also critical importance to benefit fully from scaling down L_g.