• Title/Summary/Keyword: frequency band

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A Study on the Uplink SDMA Systems: User Scheduling, Transmit Power Control, and Receive Beamforming (상향링크 공간 분할 다중 접속 시스템에서 사용자 스케쥴링, 송신 전력 제어, 수신 빔포밍에 관하여)

  • Cho, Moon-Je;Ban, Tae-Won;Jung, Bang Chul
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.18 no.2
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    • pp.289-294
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    • 2014
  • In this paper, we investigate the user scheduling, transmit beamforming, and receive beamforming of uplink space division multiple access (SDMA) systems where multiple users are allowed to transmit their signal to a base station (BS) using the same frequency band simultaneously. The BS performs a receive beamforming using the predetermined pseudo-random pattern and select users with a specific criterion. Especially, in this paper, we propose the threshold-based transmit power control, in which a user decrease its transmit power according if its generating interference to other users's signal is larger than a predetermined threshold. Assuming that the TDD system is used, the channel state information (CSI) can be obtained at each user from pilot signals from the BS. Simulation results show that the proposed technique significantly outperforms the existing user scheduling algorithms.

A $\pi$-type Variable Attenuator with Low Phase Shift (저위상 변화 특성을 갖는 $\pi$-형 가변 감쇠기)

  • Park, Ung-Hee;Ahn, Gil-Cho
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.13 no.10
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    • pp.2066-2070
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    • 2009
  • A voltage controlled attenuator using a PIN diode and two resistors of the $\pi$-type fixed attenuator is described in this paper. The proposed variable attenuator operating for a fixed attenuation range has a good input VSWR and a low intermodulation signal. For the low phase shift, a PIN diode is connected with open stub for the purpose of phase compensation. The stub for phase compensation is calculated by the Deloach method and the related circuit theory. This attenuator is easily fabricated on the microstrip and can be normally used in fine control circuits within small attenuation range. The fabricated attenuator for 2110~2170 MHz frequency band has about 4 dB of an attenuation range, $2^{\circ}$ of phase variance, and -20 dB of S11 according to the input voltage from 0 to 2.7 V.

LTE based High-speed Maritime Wireless Communication(LTE-M) Router System (LTE 기반 초고속 해상무선통신(LTE-M) 라우터 시스템)

  • Jeong, Nahkju;Natsagdor, Batdorj;Jung, Hoekyung
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.22 no.3
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    • pp.542-547
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    • 2018
  • Various countries around the world are conducting various studies to apply information and communication technology to marine safety. Based on this, the International Maritime Organization (IMO) has established the e-Navigation standard to apply the latest information and communication technology to marine services. In Korea, the Ministry of Maritime Affairs and Fisheries is promoting Korean e-navigation considering domestic marine environment and is trying to apply LTE communication method as a high-speed wireless communication method at sea. In this paper, we describe the development of an LTE based marine router system supporting 700Mhz frequency band allocated for high speed maritime wireless communication service. Experiments on the possibility of 100km distance communication from base station using LTE based ship router are shown. LTE - based high - speed maritime wireless communication router system can provide communication infrastructure necessary to develop various accident prevention technologies that may occur at sea.

Design of Power Detection Block for Wireless Communication Transmitter Systems (무선통신 송신시스템용 전력검출부 설계)

  • Hwang, Mun-Su;Koo, Jae-Jin;Ahn, Dal;Lim, Jong-Sik
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.8 no.5
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    • pp.1000-1006
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    • 2007
  • This paper presents a power detector circuit which monitors the transmitting power for the application in CDMA cell phones. The proposed power detector are composed of coupler for coupling output power and detector fur monitoring output power. The designed coupler has low loss characteristic because it adopts the stripline structure which consists of two ground planes at both sides of signal plane. The design frequency is 824-849MHz which is the Tx band fur CDMA mobile terminal, and the coupling factor of the stripline coupler is -20dB. A schottky barrier diode is adopted for detector design because of its high speed operation with minimized loss. The required impedance matching is performed to improve the linearity and sensitivity of output voltage at relatively low detector input level where the nonlinear characteristic of diode exists. The package parasitics as well as intrinsic diode model are considered for simulation of the detector. The predicted performances agree well with the measured results.

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A Technique for Reducing the Size of Butler Matrix using Multi-layer Substrates (다층기판을 이용한 버틀러 매트릭스 소형화 방법)

  • Choi, Young-Soo;Yu, Sang-Tai;Park, Sun-Ju;Dorjsuren, Baatarkhuu;Lim, Jong-Sik;Ahn, Dal
    • Proceedings of the KAIS Fall Conference
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    • 2010.05a
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    • pp.18-23
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    • 2010
  • 4$\times$4 Butler Matrix structure has been presented in this paper. It can passes the signal with equal power level and phase difference in the 824MHz to 894MHz frequency of the cellular band. Conventional Butler Matrix was implemented as a single layer substrate structure, but in this paper, we use multi-layer substrate structure and eventually we could get it reduced in size than others. We also used the LTCC coupler to reduce the size effectively, instead of using $90^{\circ}$ hybrid coupler composed of microstrip structure. we used Designer V3.5 Ansoft HFSS V11 for design of 4$\times$4 Butler matrix. Finally, we get good agreements between simulation and experimental results.

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The Improved BAMS Filter for Image Denoising (영상 잡음제거를 위한 개선된 BAMS 필터)

  • Woo, Chang-Yong;Park, Nam-Chun
    • Journal of the Institute of Convergence Signal Processing
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    • v.11 no.4
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    • pp.270-277
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    • 2010
  • The BAMS filter is a kind of wavelet shrinkage filter based on the Bayes estimators with no simulation, therefore it can be used for a real time filter. The denoising efficiency of BAMS filter is seriously affected by the estimated noise variance in each wavelet band. To remove noise in signals in existing BAMS filter, the noise variance is estimated by using the quartile of the finest level of details in the wavelet decomposition, and with this variance, the noise of the level is removed. In this paper, to remove the image noise includingodified quartile of the level of detail is proposed. And by these techniques, the image noises of mid and high frequency bands are removed, and the results showed that the increased PSNR of ab the midband noise, the noise variance estimation method using the monotonic transform and the mout 2[dB] and the effectiveness in denosing of low noise deviation images.

Characteristics Analysis of the CM and DM Noise Separator in EMI (EMI의 CM과 DM 성분 분리기의 특성 분석)

  • Park, Chan-Soo
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.17 no.5
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    • pp.49-55
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    • 2016
  • To separate the CM and DM noise in the EMI generated in various electrical electronic systems, passive and active separators have been researched. These separators are an important part of an effective active EMI-filter. The passive separator has some advantages, in that it is easy to realize at a low price and its structure is very simple. However, its major drawback is that its accurate inductor realization and accurate core selection are very difficult. The active separator is smaller in size and more accurate, but its main drawback is that an op-amp which has a broad band frequency response is necessary, its cost is high, and a DC power circuit is required. This paper compares the characteristics of EMI filters which apply the existing passive separator and proposed active separator. It was concluded that an active separator is needed for expensive and accurate equipment, whereas a passive separator is sufficient for inexpensive and general purpose EMI filters.

Study of Modulation Effect in Integrated Interface Under Controlling Switching Light-Emitting Diode Lighting Module

  • Hong, Geun-Bin;Jang, Tae-Su;Kim, Yong-Kab
    • Transactions on Electrical and Electronic Materials
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    • v.12 no.6
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    • pp.253-257
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    • 2011
  • This study was carried out to solve problems such as radio frequency band depletion, confusion risk, and security loss in existing visible wireless communication systems, and to determine the applicability of next-generation networks. A light-emitting diode (LED) light communication system was implemented with a controlling switching light module using the ATmega16 micro-controller. To solve the existing modulation effect and disturbance in visible light communication, an integrated interface was evaluated with a driving light module and analyzes its reception property. A transmitter/receiver using the ATmel's micro-controller, high-intensity white LED-6 modules, and infrared sensor KSM60WLM and visible sensor TSL250RD were designed. An experiment from the initial value of distance to 2.5 m showed 0.46 V of the voltage loss, and if in long distance, external light interference occurred and light intensity was lost by external impact and thus data had to be modified or reset repeatedly. Additionally, when we used 6 modules through the remote controller's lighting dimming, data could be transmitted up to 1.76 m without any errors during the day and up to 2.29 m at night with around 2~3% communication error. If a special optical filter can reduce as much external light as possible in the integrated interface, the LED for lighting communication systems may be applied in next generation networks.

Properties of SrSnO3:Tb3+ Green-Emitting Phosphor Thin Films Grown on Sapphire and Quartz Substrates (사파이어와 석영 기판 위에 성장된 SrSnO3:Tb3+ 녹색 형광체 박막의 특성)

  • Cho, Shinho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.9
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    • pp.546-551
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    • 2016
  • $SrSnO_3:Tb^{3+}$ phosphor thin films were prepared on sapphire and quartz substrates in the growth temperature range of $100{\sim}400^{\circ}C$ by using the radio frequency magnetron sputtering deposition. The resulting $SrSnO_3:Tb^{3+}$ thin films were characterized by X-ray diffraction, scanning electron microscopy, ultraviolet-visible-infrared spectrophotometer, and photoluminescence spectrometer. The results indicated that the morphology, optical transmittance, band gap energy, and luminescence intensity of the phosphor thin films significantly depended on the growth temperature. All the thin films, regardless of the type of substrate, showed an amorphous behavior. As for the thin films deposited on sapphire substrate, the maximum crystallite size was obtained at a growth temperature of $400^{\circ}C$ and the strongest emission was green at 544 nm arising from the $^5D_4{\rightarrow}^7F_5$ transition of Tb3+. The average optical transmittance for all the thin films grown on sapphire and quartz substrates was decreased as the growth temperature increased from 100 to $400^{\circ}C$. The results suggest that the optimum growth temperatures for depositing highly-luminescent $SrSnO_3:Tb^{3+}$ phosphor thin films on sapphire and quartz substrates are 400 and $300^{\circ}C$, respectively.

Synthesis of rhombohedral-structured zinc germanate thin films and characteristics of divalent manganese-activated electroluminescence

  • Yoon, Kyung-Ho;Kim, Joo-Han
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.453-453
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    • 2010
  • In this study, zinc germanate ($Zn_2GeO_4$) thin films has been synthesized by using radio frequency magnetron sputtering and the divalent manganese-activated luminescence was characterized. X-ray diffraction patterns of the as-deposited $Zn_2GeO_4$:Mn films showed only a broad feature, indicative of an amorphous structure. Scanning electron microscopy images revealed that the as-deposited $Zn_2GeO_4$:Mn has a smooth surface morphology. The $Zn_2GeO_4$:Mn films were found to be crystallized by annealing in air ambient at temperatures as low as $700^{\circ}C$. The annealed $Zn_2GeO_4$:Mn possessed a rhombohedral polycrystalline structure. The broad-band photoluminescent emission spectrum from 470 to 650nm was obtained at room temperature from the $Zn_2GeO_4$:Mn films. The emission peak was centered at around 535nm in the green range, which originates from the intrashell transition of manganese $3d^5$ electrons from $^4T_1$ excited-state level to the $^6A_1$ ground state. The PL emission spectrum had an asymmetric line shape, which results from the $^3d_5$ electron transitions of divalent manganese ions located at different sites of the zinc germanate host crystal lattice. Electroluminescent devices were fabricated using $Zn_2GeO_4$:Mn as an emission layer. The fabricated devices showed a green EL emission similar to the PL emission. The CIE chromaticity color coordinates of the EL emission were determined to be x=0.308 and y=0.657.

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