• 제목/요약/키워드: four-probe method

검색결과 181건 처리시간 0.027초

Dual-Configuration Four-Point Probe Method에 의한 휴대형 면저항 측정기 개발 (Development of Hand-Held Type Sheet Resistance Meter Based on a Dual-Configuration Four-Point Probe Method)

  • 강전홍;유광민;김완섭
    • 전기학회논문지P
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    • 제59권4호
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    • pp.423-427
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    • 2010
  • Portable sheet resistance-measuring instrument using the dual-configuration Four-Point Probe method is developed for the purpose of precisely measuring the sheet resistance of conducting thin films. While single-configuration Four-Point Probe method has disadvantages of applying sample size, shape and thickness corrections for a probe spacing, the developed instrument has advantages of no such corrections, little edge effects and measuring simply and accurately the sheet resistance between $0.2\Omega/sq$ and $2k\Omega/sq$.

Single-configuration FPP method에 의한 실리콘 웨이퍼의 비저항 정밀측정 (Precision Measurement of Silicon Wafer Resistivity Using Single-Configuration Four-Point Probe Method)

  • 강전홍;유광민;구경완;한상옥
    • 전기학회논문지
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    • 제60권7호
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    • pp.1434-1437
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    • 2011
  • Precision measurement of silicon wafer resistivity has been using single-configuration Four-Point Probe(FPP) method. This FPP method have to applying sample size, shape and thickness correction factor for a probe pin spacing to precision measurement of silicon wafer. The deference for resistivity measurement values applied correction factor and not applied correction factor was about 1.0 % deviation. The sample size, shape and thickness correction factor for a probe pin spacing have an effects on precision measurement for resistivity of silicon wafer.

Development of the Interfacial Area Concentration Measurement Method Using a Five Sensor Conductivity Probe

  • Euh, Dong-Jin;Yun, Byong-Jo;Song, Chul-Hwa;Kwon, Tae-Soon;Chung, Moon-Ki;Lee, Un-Chul
    • Nuclear Engineering and Technology
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    • 제32권5호
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    • pp.433-445
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    • 2000
  • The interfacial area concentration (IAC) is one of the most important parameters in the two-fluid model for two-phase flow analysis. The IAC can be measured by a local conductivity probe method that uses the difference of conductivity between water and air/steam. The number of sensors in the conductivity probe may be differently chosen by considering the flow regime of two-phase flow. The four sensor conductivity probe method predicts the IAC without any assumptions of the bubble shape. The local IAC can be obtained by measuring the three dimensional velocity vector elements at the measuring point, and the directional cosines of the sensors. The five sensor conductivity probe method proposed in this study is based on the four sensor probe method. With the five sensor probe, the local IAC for a given referred measuring area of the probe can be predicted more exactly than the four sensor probe. In this paper, the mathematical approach of the five sensor probe method for measuring the IAC is described, and a numerical simulation is carried out for ideal cap bubbles of which the sizes and locations are determined by a random number generator.

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전기비저항을 이용한 금속합금 열화도 평가기술 (Evaluation Technology of Degradation of Metallic Alloy using Electrical Resistivity)

  • 남승훈;유광민;류제천
    • 비파괴검사학회지
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    • 제21권5호
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    • pp.532-541
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    • 2001
  • 재료의 노화에 의한 강도 및 인성 감소치를 정량적으로 평가하는 비파괴적 기법의 개발이 시도되고 있으며 전기비저항법도 그 중의 하나이다. 본 연구에서는 전기비저항법의 열화도 평가에의 적용성을 살펴보기 위해 먼저 6종 10 가지의 비자성 금속을 측정시료로 선택하여 직류 two-point probe법(혹은 2탐침법)으로 전기비저항을 계산한 결과와 비접촉식 와전류 방법으로 전기비저항을 측정한 결과를 서로 비교하였다. 또한, 1Cr-1Mo-0.25V강에 대하여 비파괴적 측정 방법인 four-point probe 방법(혹은 4탐침법)을 사용하여 얻은 결과와 기존의 2탐침법을 사용하여 얻은 결과를 서로 비교하여 현장에서의 4탐침 기술의 적용 가능성을 살펴보았다. 1Cr-1Mo-0.25V강에 대하여 2탐침법으로 구한 비저항 값과 4탐침법으로 구한 비저항 측정값의 차이는 0.6%였다. 따라서 4탐침법을 사용하여 현장에서 금속소재의 열화도의 비파괴적 평가가 가능하다고 사료된다.

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Development of a Handheld Sheet Resistance Meter with the Dual-configuration Four-point Probe Method

  • Kang, Jeon-Hong;Lee, Sang-Hwa;Yu, Kwang-Min
    • Journal of Electrical Engineering and Technology
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    • 제12권3호
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    • pp.1314-1319
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    • 2017
  • A handheld sheet resistance meter that can easily and quickly measure the sheet resistance of indium tin oxide films was developed. The dual-configuration four-point probe method was adopted for this instrument, which measured sheet resistance in the range from $0.26{\Omega}/sq$. to $2.6k{\Omega}/sq$. with 0.3 % ~ 0.5 % uncertainty. The screen of the instrument displayed the sheet resistance when the probe was in contact with the sample surface and the value continued to be displayed during the probe contact. Even after separating the probe from the surface, the value was still displayed on the screen and could be read easily. A feature of the instrument was the use of the dual-configuration technique to reduce edge effects markedly compared with the single-configuration technique and its ease of operation without applying correction factors for sample size and thickness.

The comparison of critical currents measured by hall probe and transport methods for HTS coated conductor

  • Lee, Nam-Jin;Oh, Sang-Soo;Kim, Ho-Sup;Ha, Dong-Woo;Ha, Hong-Soo;Ko, Rock-Kil;Kim, Tae-Hyung;Kim, Hae-Jong;Song, Kyu-Jeong;Moon, Seung-Hyun;Youm, Do-Jun
    • 한국초전도ㆍ저온공학회논문지
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    • 제11권2호
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    • pp.11-14
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    • 2009
  • We estimated the critical current distribution of the long length CCs using hall probe method, and checked the reliability by comparing with the four-probe dc transport method. The deviation ratio of $I_{c-T}$ (a measured critical current by four probe dc transport method) and $I_{c-H}$ (calculated critical current by formula (3).) was nearly smaller than 12%. The Hall probe method appeared powerful to evaluate the critical current of CCs in a reel to reel system.

직류전위차법을 이용한 결함검출에 관한 연구 (A Study on Detecting Flaws Using DC Potential Drop Method)

  • 배봉국;석창성
    • 대한기계학회논문집A
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    • 제24권4호
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    • pp.874-880
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    • 2000
  • In this paper, a DC potential drop measurement system was used to find the position of the flaw on a simple thin plate. Four-point probe test was evaluated and used for this study. In the four-point probe test, the more distance between current pins provides the more measurable scope, the less voltage difference, and the more voltage difference rate. In the other hand, the more distance between voltage pins provides the less voltage difference and the less voltage difference rate. An optimized four-point probe was applied to measure the relation between voltage and the relative position of flaw to the probe. The Maxwell 21) simulator was used to analyze the electromagnetic field, and it showed that the analytical result was similar to the experimental result within 11.4% maximum error.

Proton Conductivity Measurement Using A.C. Impedance Spectroscopy for Proton Exchange Membrane

  • Lee, Chang Hyun;Park, Ho Bum;Lee, Young Moo
    • Korean Membrane Journal
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    • 제6권1호
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    • pp.1-9
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    • 2004
  • The impedance and the subsequent proton conductivity of Nafion$\^$/ membranes as standard samples were measured and compared via the two-probe method and the four-probe method using the prepared impedance measurement system. The different impedance behavior for the same membrane was observed at the fully hydrated state in the Nyquist impedance plot. The effect of the humidity and the temperature on the proton conduction through a membrane was investigated and compared with two different cell configurations.

An international Comparison Measurement of Silicon Wafer Sheet Resistance using the Four-point Probe Method

  • Kang, Jeon-Hong;Ying, Gao;Cheng, Yuh-Chuan;Kim, Chang-Soo;Lee, Sang-Hwa;Yu, Kwang-Min
    • Journal of Electrical Engineering and Technology
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    • 제10권1호
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    • pp.325-330
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    • 2015
  • With approval from the Asia Pacific Metrology Program Working Group on Materials Metrology (APMP WGMM), an international comparison for sheet resistance standards for silicon wafers was firstly conducted among Korea Research Institute of Standards and Science (KRISS) in Korea, CMS/ITRI in Taiwan, and NIM in China, which are national metrology institutes (NMIs), from August 2011 to January 2012. The sheet resistance values of the standards are $10{\Omega}$, $100{\Omega}$, and $1000{\Omega}$; the measurement was conducted in sequence at KRISS, CMS/ITRI, NIM, and KRISS again using the four-point probe method with single and dual configuration techniques. The reference value for the measurement results of the three NMIs was obtained through averaging the values of the three results for each sheet resistance range. The differences between the reference value and the measured values is within 0.22% for $10{\Omega}$, 0.17% for $100{\Omega}$, and 0.12% for $1000{\Omega}$. Therefore, the international consistency for conducting sheet resistance measurements is confirmed within 0.22% through the APMP WGMM approved comparison.