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http://dx.doi.org/10.5370/KIEE.2011.60.7.1434

Precision Measurement of Silicon Wafer Resistivity Using Single-Configuration Four-Point Probe Method  

Kang, Jeon-Hong (한국표준과학연구원)
Yu, Kwang-Min (한국표준과학연구원)
Koo, Kung-Wan (호서대학교 국방과학기술학과)
Han, Sang-Ok (충남대학교 전기공학과)
Publication Information
The Transactions of The Korean Institute of Electrical Engineers / v.60, no.7, 2011 , pp. 1434-1437 More about this Journal
Abstract
Precision measurement of silicon wafer resistivity has been using single-configuration Four-Point Probe(FPP) method. This FPP method have to applying sample size, shape and thickness correction factor for a probe pin spacing to precision measurement of silicon wafer. The deference for resistivity measurement values applied correction factor and not applied correction factor was about 1.0 % deviation. The sample size, shape and thickness correction factor for a probe pin spacing have an effects on precision measurement for resistivity of silicon wafer.
Keywords
Four-point probe method; Single-configuration; Col-linear four point probe; Resistivity; Sheet resistance; Silicon wafer; Accuracy; Uncertainty;
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