• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.490-490
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• 2011

Graphene, hexagonal network of carbon atoms forming a one-atom thick planar sheet, has been emerged as a fascinating material for future nanoelectronics. Huge attention has been captured by its extraordinary electronic properties, such as bipolar conductance, half integer quantum Hall effect at room temperature, ballistic transport over ${\sim}0.4{\mu}m$ length and extremely high carrier mobility at room temperature. Several approaches have been developed to produce graphene, such as micromechanical cleavage of highly ordered pyrolytic graphite using adhesive tape, chemical reduction of exfoliated graphite oxide, epitaxial growth of graphene on SiC and single crystalline metal substrate, and chemical vapor deposition (CVD) synthesis. In particular, direct synthesis of graphene using metal catalytic substrate in CVD process provides a new way to large-scale production of graphene film for realization of graphene-based electronics. In this method, metal catalytic substrates including Ni and Cu have been used for CVD synthesis of graphene. There are two proposed mechanism of graphene synthesis: carbon diffusion and precipitation for graphene synthesized on Ni, and surface adsorption for graphene synthesized on Cu, namely, self-limiting growth mechanism, which can be divided by difference of carbon solubility of the metals. Here we present that large area, uniform, and layer controllable graphene synthesized on Cu catalytic substrate is achieved by acetylene-assisted CVD. The number of graphene layer can be simply controlled by adjusting acetylene injection time, verified by Raman spectroscopy. Structural features and full details of mechanism for the growth of layer controllable graphene on Cu were systematically explored by transmission electron microscopy, atomic force microscopy, and secondary ion mass spectroscopy.

• Korean Chemical Engineering Research
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• v.46 no.6
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• pp.1081-1086
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• 2008

QDs-LEDs(quantum dot light emitting device) should contain well-organized arrays of QDs on an electron transport layer. Thin films of CdSe/ZnS core-shell QDs were successfully fabricated on $TiO_2$ substrates by using PDMS stamp and micro contact printing method. 2-Carboxyethylphosphonic acid(CAPO) and 1,6-hexanedithiol(HDT) were employed as molecular linkers in assembling CdSe/ZnS core-shell QDs with high-density and uniform array. The CAPO increased the binding strength between the QDs and the substrates, and the HDT induced the strong inter-particle attractions of assembled QDs. The assembling properties of QDs thin films were characterized by SEM, AFM, optical microscope and photoluminescence spectroscope(PL).

• Korean Journal of Materials Research
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• v.19 no.3
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• pp.151-155
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• 2009

Micro-scale copper bumps for build-up PCB were electroplated using a pulse-reverse method. The effects of the current density, pulse-reverse ratio and brightener concentration of the electroplating process were investigated and optimized for suitable performance. The electroplated micro-bumps were characterized using various analytical tools, including an optical microscope, a scanning electron microscope and an atomic force microscope. Surface analysis results showed that the electroplating uniformity was viable in a current density range of 1.4-3.0 A/$dm^2$ at a pulse-reverse ratio of 1. To investigate the brightener concentration on the electroplating properties, the current density value was fixed at 3.0 A/$dm^2$ as a dense microstructure was achieved at this current density. The brightener concentration was varied from 0.05 to 0.3 ml/L to study the effect of the concentration. The optimum concentration for micro-bump electroplating was found to be 0.05 ml/L based on the examination of the electroplating properties of the bump shape, roughness and grain size.

• Korean Journal of Applied Biomechanics
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• v.20 no.2
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• pp.239-243
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• 2010

The putting stroke accounts for 40~50% of total stroke for a golf rounding and most golfers have difficulties on the puting. Studies for the putting stroke have been conducted by analyzing various factors such as kinematics, kinetics, psychologic and physiologic parameters. A lot of devices were developed to support the studies. However there was no appropriate method to measure the position of the ball quantitatively. In this study, we developed a new measurement system to measure and evaluate the putting result. The developed system uses a USB camera to take the 2-dimensional image of the surface including the hole cup at the center of the image and the ball. The position of the ball is extracted as a set of distance and angle in polar coordinate system. We evaluated the new system with an indoor set-up for putting experiments and the system provided accurate measurement results. The proposed system can be combined with the other measurement systems such as 3D motion capture system and force plate without any restriction.

• The Journal of the Korea Contents Association
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• v.15 no.2
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• pp.499-506
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• 2015

The friction velocity is a quantity with the dimensions of velocity defined by the friction stress and density of a wall surface at near wall of flow condition. Also, the friction velocity is the hydraulic parameter describing shear force at the bottom flow. Moreover, it is a very important factor in designing open channel and essential to determine the mixing coefficient in the main flow direction. The estimation of the friction velocity are such as methods using channel slope, linear law of the mean velocity at viscous sub-layer and direct measurement of wall shear stress, etc. In the present study, we propose a friction velocity equation that has been optimized by combining the concept of entropy, which is used in stochastic method, and to verify the proposed equation, the experimental data measured by Song was used. The R squared for friction velocities between proposed equation and friction velocity formula analyzed 0.999 to 1.000 in a very good agreement with each equation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.399-402
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• 1998

Electroluminescent(EL) devices based on organic thin films have attracted lots of interests in large-area light-emitting display. One of the problems of such device is a lifetime, where a degradation of the cell is possibly due to an organic layers thickness, morphology and interface with electrode. In this study, light-omitting organic electroluminescent devices were fabricated using Alq$_3$(8-hydroxyquinolinate aluminum) and TPD(N,N'-diphenyl-N,N'-bis(3-methylphenyl(1-1\`-biphenyl]-4,4'-diamine). Where Alq$_3$ is an electron-transport and emissive layer, TPD is a hole-transport layer. The cell structure is ITO/TPD/Alq$_3$/Al and the cell is fabricated by vacuum evaporation method. In a measurement of current-voltage characteristics, we obtained a turn-on voltage at about 9 V. We also investigated stability of the devices using buffer layer with blend of PEI (Poly ether imide) and TPD by varying mot ratios between ITO and Alq$_3$. In current-voltage characteristics measurement, we obtained the turn-on voltage at about 6 V and observed an anomalous behavior at 3∼4 V. And we used other buffer layer of PEDT(3,4-pyrazino-3',4'-ethylenedithio-2,2',5,5'-tetrathiafulvalenium) with ITO/PEDT/TPD/Alq$_3$Al structure. We observed a surface morphology by AFM(Atomic Force Microscopy), UV/visible absorption spectrum, and PL(Photoluminescence) spectrum. We obtained the UV/visible absorption peak at 358nm in TPD and at 359nm in Alq$_3$, and the PL peaks at 410nm in TPD and at 510nm in Alq$_3$. We also studied EL spectrum in the cell structure of ITO/(TPD+PEI)/Alq$_3$/Al.

• Proceedings of the KSME Conference
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• 2004.04a
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• pp.1672-1677
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• 2004

Leading edge extension(LEX) in a highly swept shape applied to a delta wing features the modem air-fighters. The LEX vortices generated upon the upper surface of the wing at high angle of attack enhance the lift force of the delta wing by way of increased negative suction pressure over the surfaces. The present 3-D stereo PIV includes the Identification of 2-D cross-correlation equation, stereo matching of 2-D velocity vectors of two cameras, accurate calculation of 3-D velocity vectors by homogeneous coordinate system, removal of error vectors by a statistical method followed by a continuity equation criterion and so on. A delta wing model with or without LEX was immersed in a circulating water channel. Two high-resolution, high-speed digital cameras($1280pixel{\times}1024pixel$) were used to allow the time-resolved animation work. The present dynamic stereo PIV represents the complicated vortex behavior, especially, in terms of time-dependent characteristics of the vortices at given measuring sections. Quantities such as three velocity vector components, vorticity and other flow information can be easily visualized via the 3D time-resolved post-processing to make the easy understanding of the LEX effect or vortex emerging and collapse which are important phenomena occurring in the field of delta wing aerodynamics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.12a
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• pp.119-122
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• 2006

Process variables for manufacturing the $CuInSe_2$ thin film were established in order to clarify optimum conditions for growth of the thin film depending upon process conditions (substrate temperature, sputtering pressure, DC/RF Power), and then by changing a number of vapor deposition conditions and Annealing conditions variously, structural and electrical characteristics were measured. Thereby, optimum process variables were derived. For the manufacture of the $CuInSe_2$, Cu, In and Se were vapor-deposited in the named order. Among them, Cu and In were vapor-deposited by using the sputtering method in consideration of their adhesive force to the substrate, and the DC/RF power was controlled so that the composition of Cu and In might be 1:1, while the surface temperature having an effect on the quality of the thin film was changed from 100[$^{\circ}C$] to 300[$^{\circ}C$] at intervals of 50[$^{\circ}C$].

• Resources Recycling
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• v.7 no.4
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• pp.35-42
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• 1998

Surface mount technology is the biggest theme in the area of deιIronic component. To miniatunze an electronic component, s such as ferrite chip inductor, the cer뼈lic wet process for green-sheet lamination and/or screen printing method through a s solvent medium system is widely used. The preparation and characterization of NiCuZn Ferrite (NCZF) shurry and the green s sheet using the water mixed binder system has been studied. The 21 vol% of NCZF slurry was prepared by a ball milling. The p polyacrylic vinyl copolymer (Mw; 60,000) was used as a binder. Th$\xi$ mixture of distilled water, isopropyl alcohol (IPA) and 2l butoxy ethanol was used as a dispersion medium. The water content of medium varied from about 40% to 80%. As the results. Thc disp$\xi$rston stability of the NCZF slurry was attributed to the free polymer rather than the electrostatic force of the particle. T The viscosity of the NCZF slurry was greatly depended on the ratio of water content in the medium.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.7
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• pp.503-509
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• 2013

In this study, $Cu(In_{1-x},Ga_x)Se_2$ (CIGS) thin films were prepared on the Mo coated soda-lime glass by the DC magnetron sputtering and a subsequent selenization process. For the selenization process, selenization rapid thermal process(RTP) with cracker cell, which was helpful to smaller an atomic of Se, was adopted. To make CIGS layer, they were then annealed with the cracked Se. Based on this selenization method, we made several CIGS thin film and investigated the effects of In deposition time, and selenization time. Through x-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive spectroscopy (EDS), and atomic force microscopy (AFM), it is found that the Mo/In/CuGa structure and the high sputtering power shows the dominant chalcopyrite structure and have a uniform distribution of the grain size. The CIGS films with the In deposition time of 5 min has the best structure due to the smooth surface. And CIGS films with the selenization time of 50 min show good crystalline growth without any voids.