• Title/Summary/Keyword: force measurement

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Injury and inflammation detection by the application of microcurrent through the skin

  • Hui, Timothy;Petrofsky, Jerrold
    • Physical Therapy Rehabilitation Science
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    • v.2 no.1
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    • pp.31-38
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    • 2013
  • Objective: To determine the efficacy and reliability of measuring direct current microcurrent applied through the skin to determine injury in the underlying tissues. Design: Case control study. Methods: First, microcurrent was measured as decreased blood flow induced hypoxia in healthy subjects. Next, reliability was assessed by measuring over ten days with set variations in pressure and distance between the electrodes. Finally, measurements over sprained ankle were compared to measurements over comparable uninjured areas on the same injured subject. Results: For the blood flow test phase, microcurrent significantly decreased an average of 17% after 5 minutes (p<0.05), remained decreased for 30 seconds, and returned to non-occlusive levels after 2 minutes of normal circulation. The results indicate that the microcurrent decrease was not due to blood flow, and most likely from hypoxic cellular damage. For the reliability phase, the coefficients of variation averaged 10.3% for the shoulder, 14.8% for the low back, and 29.1% for the knee. Changing distance 2.5 cm between the electrodes resulted in insignificant changes. Changes in pressure had some significant effect after an increase in force of 2.6 N, affirming the need for consistent pressure for measurement. For the injury test phase, a significant 69% decrease occurred comparing injured areas to the same area on the uninjured side, and a significant 74% occurred comparing injured and non-injured areas on the same limb. Conclusions: Microcurrent through the skin shows promise as an objective method of assessing a soft tissue injury by detecting damage likely due to hypoxia.

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Structural, Electrical and Optical Properties of ZnO Thin Films Grown at Various Plume-Substrate Angles by Pulsed Laser Deposition

  • Kim Jae-Won;Kang Hong-Seong;Lee Sang-Yeol
    • KIEE International Transactions on Electrophysics and Applications
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    • v.5C no.3
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    • pp.97-101
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    • 2005
  • ZnO thin films were grown at different plume-substrate (P-S) angles of 90$^{\circ}$ (on-axis PLD), 45$^{\circ}$ and 0$^{\circ}$ (off-axis PLD) using pulsed laser deposition. The x-ray diffraction pattern exhibiting a dominant (002) and a minor (101) peak of ZnO indicates all films were strongly c-axis oriented. By observing of (002) peak, the FWHMs of ZnO (002) peaks decreased and c-axis lattice constant approached the value of bulk ZnO as P-S angle decreased. Whereas the carrier concentration of ZnO thin film deposited at P-S angle of 90$^{\circ}$ was ~ 10$^{19}$ /cm$^{3}$, the Hall measurement of ZnO thin films deposited at P-S angles of 0$^{\circ}$ and 45$^{\circ}$ was impossible due to the decrease of the carrier concentration by the improvement of stoichiometry and crystalline quality. By decreasing P-S angle, the grain size of the films and the UV intensity investigated by photoluminescence (PL) increased and UV peak position showed red shift. The improvement of properties in ZnO thin films deposited by off-axis technique was due to the decrease of repulsive force between a substrate and the particle in plume and the relaxation of supersaturation.

Electrical, Structural, Optical Properties of the AZO Transparent Conducting Oxide Layer for Application to Flat Panel Display (평판디스플레이 응용을 위한 AZO 투명전도막의 전기적, 구조적 및 광학적 특성)

  • No, Im-Jun;Kim, Sung-Hyun;Park, Dong-Wha;Shin, Paik-Kyun
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.58 no.10
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    • pp.1976-1981
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    • 2009
  • Transparent conducting aluminum-doped zinc oxide (AZO) thin films were deposited on Coming glass substrate using an Gun-type rf magnetron sputtering deposition technology. The AZO thin films were fabricated with an AZO ceramic target (Zn: 98wt.%, $Al_2O_3$: 2wt.%). The AZO thin films were deposited with various growth conditions such as the substrate temperature, oxygen pressure. X -ray diffraction (XRD), UV/visible spectroscope, atomic force microscope (AFM), and Hall effect measurement system were done in order to investigate the properties of the AZO thin films Among the AZO thin films prepared in this study, the one formed at conditions of the substrate temperature $100^{\circ}C$, Ar 50 sccm, $O_2$ 5 sccm and working pressure 5 motor showed the best properties of an electrical resistivity of $1.763{\times}10^{-4}\;[{\Omega}{\cdot}cm]$, a carrier concentration of $1.801{\times}10^{21}\;[cm^{-3}]$, and a carrier mobility of $19.66\;[cm^2/V{\cdot}S]$, which indicates that it could be used as a transparent electrode for thin film transistor and flat panel display applications.

Pentacene Thin Film Transistors with Various Polymer Gate Insulators

  • Kim, Jae-Kyoung;Kim, Jung-Min;Yoon, Tae-Sik;Lee, Hyun-Ho;Jeon, D.;Kim, Yong-Sang
    • Journal of Electrical Engineering and Technology
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    • v.4 no.1
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    • pp.118-122
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    • 2009
  • Organic thin film transistors with a pentacene active layer and various polymer gate insulators were fabricated and their performances were investigated. Characteristics of pentacene thin film transistors on different polymer substrates were investigated using an atomic force microscope (AFM) and x-ray diffraction (XRD). The pentacene thin films were deposited by thermal evaporation on the gate insulators of various polymers. Hexamethyldisilazane (HMDS), polyvinyl acetate (PVA) and polymethyl methacrylate (PMMA) were fabricated as the gate insulator where a pentacene layer was deposited at 40, 55, 70, 85, 100 oC. Pentacene thin films on PMMA showed the largest grain size and least trap concentration. In addition, pentacene TFTs of top-contact geometry are compared with PMMA and $SiO_2$ as gate insulators, respectively. We also fabricated pentacene TFT with Poly (3, 4-ethylenedioxythiophene)-Polysturene Sulfonate (PEDOT:PSS) electrode by inkjet printing method. The physical and electrical characteristics of each gate insulator were tested and analyzed by AFM and I-V measurement. It was found that the performance of TFT was mainly determined by morphology of pentacene rather than the physical or chemical structure of the polymer gate insulator

Relation between Surface degradation and Anti-pollution Characteristics in RTV Silicone Rubber (RTV 실리콘 고무의 표면열화와 내오손 특성과의 상관관계)

  • 연복희;이태호;허창수;이상엽
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.7
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    • pp.598-606
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    • 2000
  • In this paper we investigated the relation between the surface degradations and anti-pollution characteristics of Room Temperature Vulcanized(RTV) silicone rubber coating that has different roughness through immersing into saline water. We utilized several analytic techniques such as atomic force microscopy(AFM) scaning electron microscopy(SEM) contact angle Salt Deposit Density(SDD) and average leakage current under the condition of salt fog. It is found that the surface roughness of treated RTV silicone rubber increased and the hydrophobicity of sample surface decreased with increasing the duration o immersion into water due to the erosion of base polymer the melting down alumina trihydrate(ATH) and the diffusion of Low Molecular weight(LMW) fluid. Despite the roughness of surface had been increased by water immersion excellant anti-pollution and recovery characteristics were maintained and SDD saturated to 0.1~0.14mg/cm$^2$. The average leakage current under salt fog increased with surface roughness. Measurement of average leakage current will be helpful to investigate surface degradation and lifetime expectation of RTV silicone coating.

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Simulation and Characteristic Measurement with Sputtering Conditions of Triode Magnetron Sputter

  • Kim, Hyun-Hoo;Lim, Kee-Joe
    • Transactions on Electrical and Electronic Materials
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    • v.5 no.1
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    • pp.11-14
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    • 2004
  • An rf triode magnetron sputtering system is designed and installed its construction in vacuum chamber. In order to calibrate the rf triode magnetron sputtering for thin films deposition processes, the effects of different glow discharge conditions were investigated in terms of the deposition rate measurements. The basic parameters for calibrating experiment in this sputtering system are rf power input, gas pressure, plasma current, and target-to-substrate distance. Because a knowledge of the deposition rate is necessary to control film thickness and to evaluate optimal conditions which are an important consideration in preparing better thin films, the deposition rates of copper as a testing material under the various sputtering conditions are investigated. Furthermore, a triode sputtering system designed in our team is simulated by the SIMION program. As a result, it is sure that the simulation of electron trajectories in the sputtering system is confined directly above the target surface by the force of E${\times}$B field. Finally, some teats with the above 4 different sputtering conditions demonstrate that the deposition rate of rf triode magnetron sputtering is relatively higher than that of the conventional sputtering system. This means that the higher deposition rate is probably caused by a high ion density in the triode and magnetron system. The erosion area of target surface bombarded by Ar ion is sputtered widely on the whole target except on both magnet sides. Therefore, the designed rf triode magnetron sputtering is a powerful deposition system.

Growth of Single Crystalline 3C-SiC Thin Films for High Power Devices by CVD (CVD에 의한 고전력 디바이스용 단결정 3C-SiC 박막 성장)

  • Chung, Gwiy-Sang;Shim, Jae-Cheol
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.2
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    • pp.98-102
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    • 2010
  • This paper describes that single crystalline 3C-SiC (cubic silicon carbide) thin films have been deposited on carbonized Si(100) substrates using hexamethyldisilane (HMDS, $Si_2(CH_3){_6}$) as a safe organosilane single precursor and a nonflammable mixture of Ar and $H_2$ gas as the carrier gas by APCVD at $1280^{\circ}C$. The deposition was performed under various conditions to determine the optimized growth condition. The crystallinity of the 3C-SiC thin film was analyzed by XRD (X-ray diffraction). The surface morphology was also observed by AFM (atomic force microscopy) and voids between SiC and Si interfaces were measured by SEM (scanning electron microscopy). Finally, residual strain and hall mobility was investigated by surface profiler and hall measurement, respectively. From these results, the single crystalline 3C-SiC film had a good crystal quality without defects due to viods, a low residual stress, a very low roughness.

A Study on Organistic Line Extension on Digital Space - Focus on NOX digital space - (디지털 공간에 나타난 선의 유기체적 확장성에 관한 연구 - NOX 디지털 공간을 중심으로 -)

  • Yu, Mi-Yeon;Yoon, Jae-Eun
    • Korean Institute of Interior Design Journal
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    • v.17 no.3
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    • pp.148-155
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    • 2008
  • The following research focuses on the formation method of digital space by organistic line extension among various digital formation methods. The paper reflects on the meaning and concept of today's digitalism which enables the application of complex organistic system on space through advanced technology. It also explores the concept of a line in topology which differs in assumptive meaning from traditional Euclidian geometry. The findings of the research are that first, digital space is not optimized, but is a tentative formation in process. A digital space encompasses characteristics such as infinity, possibility, potential, asymmetry, and the force of virtuality such characteristics are expressed through a moving surface constantly changing with direction. Second, a digital space formed by line extension is inseparable and durable since no measurement or dimension is predetermined. Furthermore, its sense of direction and flexibility gives it a feeling of a living organism. Third, a Euclidian methodology called 'NURBS' is being developed to express such a dynamic digital space; this is reflected through three elements, control point, weights, and knots to effectively reflect the characteristics of virtuality. The opportunities of digital space are infinite, and the possibilities of formation methods likewise vast.

Ni Electroplating in the Emulsions of Supercritical $CO_2$ Formed by Ultrasonar (초음파를 이용한 초임계 이산화탄소 에멀젼내 Ni 전해도금)

  • Koh M. S.;Joo M. S.;Park K. H.;Kim H. D.;Kim H. W.;Han S. H.;Sato Nobuaki
    • Journal of the Korean institute of surface engineering
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    • v.37 no.6
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    • pp.344-349
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    • 2004
  • Emulsions were formed through putting small quantity of nickel electroplating solution into supercritical carbon dioxide, and then electroplating in the $sc-CO_2$ emulsions was conducted. It is an environmental-friendly technology that can solve the treatment of a large quantity of toxic plating wastewater, which is a big problem in the existing wet plating, and also can reduce secondary waste generation fundamentally. Supercritical carbon dioxide emulsions enhanced by ultrasonic horn were formed by non-ionic surfactant and nickel solution. Plating condition within emulsions was set up as 120bar and $55^{\circ}C$ through measurement of electrical conductivity following the pressure change. Experiments were conducted respectively against supercritical carbon dioxide emulsions electroplating and general chemical electroplating, and then their results were compared and analyzed. As the experiment result utilizing emulsions, plating surface was formed very evenly even with a small quantity of electroplating solution, and fine particles were plated compactly without any pinhole or crack due to hydrogenation, which occurs in general electroplating. Used electroplating solution can be reused through recovery process. Therefore, this technology will be able to be applied as new clean technology in electro-plating.

A Study on properties of Lower Electrode thin films solar cell for Mo thin film (박막태양전지 하부전극용 Mo 박막특성 연구)

  • Yang, Hyeon-Hun;Kim, Young-Jun;Jeong, Woon-Jo;Park, Gye-Choon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.321-322
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    • 2007
  • In order to increase the cost effectiveness of solar cells, module production should be treated more comprehensively. Back contact cells offer distinct advantage in the interconnection of cells to modules. Thereby Mo thin film were prepared in order to clarify optimum conditions for growth of the thin film depending upon process, and then by changing a number of deposition conditions and substrate temperature conditions variously, structural and electrical characteristics were measured. For the manufacture of the Mo were vapor-deposited in the named order. Among them, Mo were vapor-deposited by using the sputtering method in consideration of their adhesive force to the substrate, and the DC power was controlled so that the composition of Mo, while the surface temperature having an effect on the quality of the thin film was changed from R.T$[^{\circ}C]$ to $200[^{\circ}C]$ at intervals of $50[^{\circ}C]$. Micro-structural studies were carried out by XRD (D/MAX-1200, Rigaku Co.) and SEM (JSM-5400, Jeol Co.). Electrical properties were measured by CMT-SR3000 Measurement System.

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