• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.1
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• pp.60-68
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• 2010

In case of sensorineural hearing loss, auditory perception can be activated by electrical stimulation of the nervous system via electrode implanted into the cochlea or auditory nerve. Since the tonotopic map of the human auditory nerve has not been definitively identified, the recording of auditory nerve signal with microelectrode is desirable for determining the tonotopic map. This paper proposes the multi-channel analog front-end for auditory nerve signal detection. A channel of the proposed analog front-end consists of an AC coupling circuit, a low-power 4th-order Gm-C LPF, and a single-slope ADC. The AC coupling circuit transfers only AC signal while it blocks DC signal level. Considering the bandwidth of the auditory signal, the Gm-C LPF is designed with OTAs adopting floating-gate technique. For the channel-parallel ADC structure, the single-slope ADC is used because it occupies the small silicon area. Experimental results shows that the AC coupling circuit and LPF have the bandwidth of 100 Hz - 6.95 kHz and the ADC has the effective resolution of 7.7 bits. The power consumption per a channel is $12\;{\mu}W$, the power supply is 3.0 V, and the core area is $2.6\;mm\;{\times}\;3.7\;mm$. The proposed analog front-end was fabricated in a 1-poly 4-metal $0.35-{\mu}m$ CMOS process.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.35C no.11
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• pp.31-38
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• 1998

This paper deals with CBS(Cycle Base Simulator) design of a 32 bit floating point DSP(Digital Signal Processor). The CBS has been developed for TMS320C30 compatible DSP and will be used to confirm the architecture, functions of sub-blocks, and control signals of the chip before the detailed logic design starts with VHDL. The outputs from CBS are used as important references at gate level design step because they give us control signals, output values of important blocks, values from internal buses and registers at each pipeline step, which are not available from the commercial simulator of DSP. In addition to core functions, it has various interfaces for efficient execution and convenient result display, CBS is verified through comparison with results from the commercial simulator for many application algorithms and its simulation speed is as fast as several tenth of that of logic simulation with VHDL. CBS in this work is for a specific DSP, but the concept may be applicable to other VLSI design.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.11
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• pp.914-920
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• 2000

When the charge-trap type SONOS(polysilicon-oxide-nitride-oxide-semiconductor) cells are used to flash memory, the tunneling program/erase condition to minimize the generation of interface traps was investigated. SONOSFET NVSM(Nonvolatile Semiconductor Memory) cells were fabricated using 0.35 ㎛ standard memory cell embedded logic process including the ONO cell process, based on retrograde twin-well, single-poly, single metal CMOS(Complementary Metal Oxide Semiconductor) process. The thickness of ONO triple-dielectric for the memory cell is tunnel oxide of 24 $\AA$, nitride of 74 $\AA$, blocking oxide of 25 $\AA$, respectively. The program mode(V$\_$g/=7, 8, 9 V, V$\_$s/=V$\_$d/=-3 V, V$\_$b/=floating) and the erase mode(V$\_$g/=-4, -5, -6 V, V$\_$s/=V$\_$d/=floating, V$\_$b/=3 V) by MFN(Modified Fowler-Nordheim) tunneling were used. The proposed programming condition for the flash memory of SONOSFET NVSM cells showed less degradation(ΔV$\_$th/, S, G$\_$m/) characteristics than channel MFN tunneling operation. Also, the program inhibit conditins of unselected cell for separated source lines NOR-type flash memory application were investigated. we demonstrated that the phenomenon of the program disturb did not occur at source/drain voltage of 1 V∼12 V and gate voltage of -8 V∼4 V.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.5
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• pp.857-864
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• 2006

This paper describes a design of low-power/small-area arithmetic circuits which are vector processing unit powering nit, divider unit and square-root unit for mobile 3D graphic accelerator. To achieve area-efficient and low-power implementation that is an essential consideration for mobile environment, the fixed-point f[mat of 16.16 is adopted instead of conventional floating-point format. The vector processing unit is designed using redundant binary(RB) arithmetic. As a result, it can operate 30% faster and obtained gate count reduction of 10%, compared to the conventional methods which consist of four multipliers and three adders. The powering nit, divider unit and square-root nit are based on logarithm number system. The binary-to-logarithm converter is designed using combinational logic based on six-region approximation method. So, the powering mit, divider unit and square-root unit reduce gate count when compared with lookup table implementation.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.254-254
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• 2011

The memories with nano-particles are very attractive because they are promising candidates for low operating voltage, long retention time and fast program/erase speed. In recent, various nano-floating gate memories with metal-oxide nanocrystals embedded in organic and inorganic layers have been reported. Because of the carrier generation in semiconductor, induced photon pulse enhanced the program/erase speed of memory device. We studied photo-induced electrical properties of these metal-oxide nanocrystal memory devices. At first, 2~10-nm-thick Sn and In metals were deposited by using thermal evaporation onto Si wafer including a channel with $n^+$ poly-Si source/drain in which the length and width are 10 ${\mu}m$ each. Then, a poly-amic-acid (PAA) was spin coated on the deposited Sn film. The PAA precursor used in this study was prepared by dissolving biphenyl-tetracarboxylic dianhydride-phenylene diamine (BPDA-PDA) commercial polyamic acid in N-methyl-2-pyrrolidon (NMP). Then the samples were cured at 400$^{\circ}C$ for 1 hour in N atmosphere after drying at 135$^{\circ}C$ for 30 min through rapid thermal annealing. The deposition of aluminum layer with thickness of 200 nm was followed by using a thermal evaporator, and then the gate electrode was defined by photolithography and etching. The electrical properties were measured at room temperature using an HP4156a precision semiconductor parameter analyzer and an Agilent 81101A pulse generator. Also, the optical pulse for the study on photo-induced electrical properties was applied by Xeon lamp light source and a monochromator system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.35-38
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• 2002

In this paper, the characteristics of channel hot electron (CHE) injection for the write operation in a NOR-type SONOS flash memory with common source line were investigated. The thicknesses of he tunnel oxide, the memory nitride， and the blocking oxide layers for the gate insulator of the fabricated SONOS devices were $34{\AA}$, $73{\AA}$, and $34{\AA}$, respectively. The SONOS devices compared to floating gate devices have many advantages, which are a simpler cell structure, compatibility with conventional logic CMOS process and a superior scalability. For these reasons, the introduction of SONOS device has stimulated. In the conventional SONOS devices, Modified Folwer-Nordheim (MFN) tunneling and CHE injection for writing require high voltages, which are typically in the range of 9 V to 15 V. However CHE injection in our devices was achieved with the single power supply of 5 V. To demonstrate CHE injection, substrate current (Isub) and one-shot programming curve were investigated. The memory window of about 3.2 V and the write speed of $100{\mu}s$ were obtained. Also, the disturbance and drain turn-on leakage during CHE injection were not affected in the SONOS array. These results show that CHE injection can be achieved with a low voltage and single power supply, and applied for the high speed program of the SONOS memory devices.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• v.9 no.1
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• pp.951-954
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• 2005

This paper presents a study on the accuracy position Controller design for the Composite Smoke Bomb Rotational driving system using a BLDC servo motor. Function of Smoke Bomb is blind in the enermy's sight so that need to high response. The BLDC servo motor controller was designed with DSP(TMS320VC33), IGBT(Insulated Gate Bipolar. Transistor), IGBT gate driver and CPLD(EPM7128). This paper implements those control with vector control and MIN-MAX PWM. Vector control requires information about rotor positions, a resolver should be used to achieve that. The main controller is implemented with a TMS320VC33 high performance floating-point DSP(Digital Signal Process) and PWM Generator is embodied using EPM7128.

• Proceedings of the IEEK Conference
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• 2004.08c
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• pp.482-485
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• 2004

We fabricated a hybrid bulk/fully depleted silicon on insulator (FDSOI) complementary metal oxide semiconductor (CMOS) active pixel image sensor. The active pixel is comprised of reset and source follower transistors on the SOI seed wafer, while the pinned photodiode and readout gate and floating diffusion are fabricated on the SOI handle wafer after the removal of the buried oxide. The source of dark current is eliminated by hybrid bulk/FDSOI pixel structure between localized oxidation of silicon (LOCOS) and photodiode(PD). By using the low noise hybrid pixel structure, dark currents qm be suppressed significantly. The pinned photodiode can also be optimized for quantum efficiency and reduce the noise of dark current. The spectral response of the pinned photodiode on the SOI handle wafer is very flat between 400 nm and 700 nm and the dark current that is higher than desired is about 10 nA/cm2 at a $V_{DD}$ of 2 V.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.5
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• pp.367-373
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• 2001

A programmable A/D converter is designed with 8 N and P channel MOSFETs, respectively. In order to observe linear programmability of the EEPROM device during programming mode, a cell is developed with a 1.2 ${\mu}{\textrm}{m}$ double poly CMOS fabrication process in MOSIS. It is observed that the high resolution, of say 10m Volt, is valid in the range 1.25volts to 2volts. The experimental result is used for simulating the programmable 8 bit A/D converter with Hspice. The A/D converter is demonstrated to consume low power, 37㎽ by utilizing a programming operation. In addition, the converter is attained at the conversion frequency of 333 MHz.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.6
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• pp.1095-1102
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• 2010

This paper presents an equalizer reducing CCI(cell-to-cell interference) in MLC NAND flash memory. High growth of the flash memory market has been driven by two combined technological efforts that are an aggressive scaling technique which doubles the memory density every year and the introduction of MLC(multi level cell) technology. Therefore, the CCI is a critical factor which affects occurring data errors in cells. We introduced an equation of CCI model and designed an equalizer reducing CCI based on the proposed equation. In the model, we have been considered the floating gate capacitance coupling effect, the direct field effect, and programming methods of the MLC NAND flash memory. Also we design and verify the proposed equalizer using Matlab. As the simulation result, the error correction ratio of the equalizer shows about 20% under 20nm NAND process where the memory channel model has serious CCI.