• Title/Summary/Keyword: flip-through

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A Study of Warpage Analysis According to Influence Factors in FOWLP Structure (FOWLP 구조의 영향 인자에 따른 휨 현상 해석 연구)

  • Jung, Cheong-Ha;Seo, Won;Kim, Gu-Sung
    • Journal of the Semiconductor & Display Technology
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    • v.17 no.4
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    • pp.42-45
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    • 2018
  • As The semiconductor decrease from 10 nanometer to 7 nanometer, It is suggested that "More than Moore" is needed to follow Moore's Law, which has been a guide for the semiconductor industry. Fan-Out Wafer Level Package(FOWLP) is considered as the key to "More than Moore" to lead the next generation in semiconductors, and the reasons are as follows. the fan-out WLP does not require a substrate, unlike conventional wire bonding and flip-chip bonding packages. As a result, the thickness of the package reduces, and the interconnection becomes shorter. It is easy to increase the number of I / Os and apply it to the multi-layered 3D package. However, FOWLP has many issues that need to be resolved in order for mass production to become feasible. One of the most critical problem is the warpage problem in a process. Due to the nature of the FOWLP structure, the RDL is wired to multiple layers. The warpage problem arises when a new RDL layer is created. It occurs because the solder ball reflow process is exposed to high temperatures for long periods of time, which may cause cracks inside the package. For this reason, we have studied warpage in the FOWLP structure using commercial simulation software through the implementation of the reflow process. Simulation was performed to reproduce the experiment of products of molding compound company. Young's modulus and poisson's ratio were found to be influenced by the order of influence of the factors affecting the distortion. We confirmed that the lower young's modulus and poisson's ratio, the lower warpage.

Cu Electroplating on the Si Wafer and Reliability Assessment of Low Alpha Solder Bump for 3-D Packaging (3차원 실장용 실리콘 웨이퍼 Cu 전해도금 및 로우알파솔더 범프의 신뢰성 평가)

  • Jung, Do Hyun;Lee, Joon Hyung;Jung, Jae Pil
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2012.11a
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    • pp.123-123
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    • 2012
  • 최근 연구되고 있는 TSV(Through Silicon Via) 기술은 Si 웨이퍼 상에 직접 전기적 연결 통로인 관통홀을 형성하는 방법으로 칩간 연결거리를 최소화 할 수 있으며, 부피의 감소, 연결부 단축에 따른 빠른 신호 전달을 가능하게 한다. 이러한 TSV 기술은 최근의 초경량화와 고집적화로 대표되는 전자제품의 요구를 만족시킬 수 있는 차세대 실장법으로 기대를 모으고 있다. 한편, 납땜 재료의 주 원료인 주석은 주로 반도체 소자의 제조, 반도체 칩과 기판의 접합 및 플립 칩 (Flip Chip) 제조시의 범프 형성 등 반도체용 배선재료에 널리 사용되고 있다. 최근에는 납의 유해성 때문에 대부분의 전자제품은 무연솔더를 이용하여 제조되고 있지만, 주석을 이용한 반도체 소자가 고밀도화, 고 용량화 및 미세피치(Fine Pitch)화 되고 있기 때문에, 반도체 칩의 근방에 배치된 주석으로부터 많은 알파 방사선이 방출되어 메모리 셀의 정보를 유실시키는 소프트 에러 (Soft Error)가 발생되는 위험이 많아지고 있다. 이로 인해, 반도체 소자 및 납땜 재료의 주 원료인 주석의 고순도화가 요구되고 있으며, 특히 알파 방사선의 방출이 낮은 로우알파솔더 (Low Alpha Solder)가 요구되고 있다. 이에 따라 본 연구는 4인치 실리콘 웨이퍼상에 직경 $60{\mu}m$, 깊이 $120{\mu}m$의 비아홀을 형성하고, 비아 홀 내에 기능 박막증착 및 전해도금을 이용하여 전도성 물질인 Cu를 충전한 후 직경 $80{\mu}m$의 로우알파 Sn-1.0Ag-0.5Cu 솔더를 접합 한 후, 접합부 신뢰성 평가를 수행을 위해 고속 전단시험을 실시하였다. 비아 홀 내 미세구조와 범프의 형상 및 전단시험 후 파괴모드의 분석은 FE-SEM (Field Emission Scanning Electron Microscope)을 이용하여 관찰하였다. 연구 결과 비아의 입구 막힘이나 보이드(Void)와 같은 결함 없이 Cu를 충전하였으며, 고속전단의 경우는 전단 속도가 증가할수록 취성파괴가 증가하는 경향을 보였다. 본 연구를 통하여 전해도금을 이용한 비아 홀 내 Cu의 고속 충전 및 로우알파 솔더 볼의 범프 형성이 가능하였으며, 이로 인한 전자제품의 소프트에러의 감소가 기대된다.

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Case studies and effects of flipped learning applied to western costume history (플립 러닝을 활용한 서양복식사 수업 사례 및 효과 - 고대 메소포타미아 복식을 중심으로 -)

  • Shin, Hye Won;Kim, Hee Ra
    • Journal of Korean Home Economics Education Association
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    • v.30 no.2
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    • pp.137-147
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    • 2018
  • The purpose of this study was to develop and examine the effects of flipped learning in ancient Mesopotamian costume history. The flipped learning class was designed to three steps(pre-class, in-class, after-class). Pre-class: Students learned the socio-cultural background of Mesopotamia by watching videos online and Mesopotamian costume with PPT. In-class: Students were evaluated for their prior learning through the quiz. After the quiz, the instructor had a supplementary mini-lecture. Then the advanced learning was progressed with the team project(Mesopotamian costume analysis) by online Louvre Museum. Students made a team presentation and the instructor provided feedback. After-class: The effectiveness of flipped learning was measured based on the students' self-reflective journals and class awareness surveys. As the results, students actively participated in flipped learning and the class was rated appropriate. Students were satisfied with the overall quality of the flipped learning class. The Effect of Flip Learning Classes in reflective journals were shown as 'related flipped learning style,' 'related online Louvre museum project,' 'understanding of cooperative learning,' and 'contents of the class'. In conclusion, the flipped learning applied to Mesopotamian costume history was positive as a learner-centered education.

Spalling of Intermetallic Compound during the Reaction between Electroless Ni(P) and Lead-free Solders (무전해 Ni(P)과 무연솔더와의 반응 중 금속간화합물의 spalling 현상에 관한 연구)

  • Sohn Yoon-Chul;Yu Jin;Kang S. K.;Shih D. Y,;Lee Taek-Yeong
    • Journal of the Microelectronics and Packaging Society
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    • v.11 no.3 s.32
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    • pp.37-45
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    • 2004
  • Electroless Ni(P) has been widely used for under bump metallization (UBM) of flip chip and surface finish layer in microelectronic packaging because of its excellent solderability, corrosion resistance, uniformity, selective deposition without photo-lithography, and also good diffusion barrier. However, the brittle fracture at solder joints and the spatting of intermetallic compound (IMC) associated with electroless Ni(P) are critical issues for its successful applications. In the present study, the mechanism of IMC spatting and microstructure change of the Ni(P) film were investigated with varying P content in the Ni(P) film (4.6,9, and $13 wt.\%$P). A reaction between Sn penetrated through the channels among $Ni_3Sn_4$ IMCs and the P-rich layer ($Ni_3P$) of the Ni(P) film formed a $Ni_3SnP$ layer. Thickening of the $Ni_3SnP$ layer led to $Ni_3Sn_4$ spatting. After $Ni_3Sn_4$ spatting, the Ni(P) film directly contacted the molten solder and the $Ni_3P$ phase further transformed into a $Ni_2P$ phase. During the crystallization process, some cracks formed in the Ni(P) film to release tensile stress accumulated from volume shrinkage of the film.

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Application of professor·learning model customized for flipped learning for enhancing basic ability of work - Focused on freshman students in radiology department of specialized colleges (직업기초능력함양을 위한 맞춤식 플립드 러닝 교수·학습모형 적용-전문대학 방사선과 1학년 재학생을 중심으로)

  • Park, Jeongkyu
    • Journal of the Korean Society of Radiology
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    • v.12 no.2
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    • pp.225-231
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    • 2018
  • Recently, new teaching methods for communicating with teachers and students have been emerged according to the trends of decreasing the school-age population and the development of the mass media. We have applied teaching-learning model based on the flip learning to the college students in this work. As a result of the test for the customized flipped learning teaching-learning model in pre-class, the attendance rate of the major subject was 92.3% whereas that in liberal arts courses other than majors revealed 87.6%. This result for attendance rate shows that first year students in the radiology department have been actively participated in pre-class of the major subject than that of the liberal arts curriculum. From comparing the differences between the study group that was applied flipped learning in class and the non-applied group, the research group showed higher scores in knowledge, skills, and attitudes than the comparative group. In addition, more than 90% of the learners improved their responsibility, problem solving ability, creative thinking, cooperative ability, and communication ability through this learning program. From the test for the difference in the role of radiologists in the post class, the mean score was 4.40 for the group applied the teaching-learning model while that for non-applied group was 2.10. Hence, from such results, we see that this teaching-learning model is appropriate and needs to be extended to cultivate basic skills in radiology and relevant vocational education.

A Study on Temperature Dependence of Tunneling Magnetoresistance on Plasma Oxidation Time and Annealing Temperature (플라즈마 산화시간과 열처리 조건에 따른 터널링 자기저항비의 온도의존특성에 관한 연구)

  • Kim, Sung-Hoon;Lee, Seong-Rae
    • Journal of the Korean Magnetics Society
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    • v.14 no.3
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    • pp.99-104
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    • 2004
  • We have studied to understand the barrier and interface qualities and structural changes through measuring temperature dependent spin-polarization as functions of plasma oxidation time and annealing time. Magnetic tunnel junctions consisting of SiO2$_2$/Ta 5/CoFe 17/IrMn 7.5/CoFe 5/Al 1.6-Ox/CoFe 5/Ta 5 (numbers in nm) were deposited and annealed when necessary. A 30 s,40 s oxidized sample showed the lowest spin-polarization values. It is presumed that tunneling electrons were depolarized and scattered by residual paramagnetic Al due to under-oxidation. On the contrary, a 60s, 70 s oxidized sample might have experienced over-oxidation, where partially oxidized magnetic dead layer was formed on top of the bottom CoFe electrode. The magnetic dead layer is known to increase the probability of spin-flip scattering. Therefore it showed a higher temperature dependence than that of the optimum sample (50 s oxidation). temperature dependence of 450 K annealed samples was improved when the as-deposited one compared. But the sample underwent 475 K and 500 K annealing exhibits inferior temperature dependence of spin-polarization, indicating that the over-annealed sample became microstucturally degraded.

Failure in the COG Joint Using Non-Conductive Adhesive and Polymer Bumps (감광성 고분자 범프와 NCA (Non-Conductive Adhesive)를 이용한 COG 접합에서의 불량)

  • Ahn, Kyeong-Soo;Kim, Young-Ho
    • Journal of the Microelectronics and Packaging Society
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    • v.14 no.1
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    • pp.33-38
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    • 2007
  • We studied a bonding at low temperature using polymer bump and Non-Conductive Adhesive (NCA), and studied the reliability of the polymer bump/Al pad joints. The polymer bumps were formed on oxidized Si substrates by photolithography process, and the thin film metals were formed on the polymer bumps using DC magnetron sputtering. The substrate used was AL metallized glass. The polymer bump and Al metallized glass substrates were joined together at $80^{\circ}C$ under various pressure. Two NCAs were applied during joining. Thermal cycling test ($0^{\circ}C-55^{\circ}C$, cycle/30 min) was carried out up to 2000 cycles to evaluate the reliability of the joints. The bondability was evaluated by measuring the contact resistance of the joints through the four point probe method, and the joints were observed by Scanning Electron Microscope (SEM). The contact resistance of the joints was $70-90m{\Omega}$ before the reliability test. The joints of the polymer bump/Al pad were damaged by NCA filler particles under pressure above 200 MPa. After reliability test, some joints were electrically failed since thinner metal layers deposited at the edge of bumps were disconnected.

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The Effect of Flipped-PBL on the Communication and Problem Solving Skills (Flipped-PBL이 대학생의 문제해결능력과 의사소통능력에 미치는 영향)

  • Nam, Sunwoo
    • Journal of Christian Education in Korea
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    • v.64
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    • pp.347-368
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    • 2020
  • The purpose of this study was explored the effect of Flipped PBL on Communication and Problem Solving skill of University students. For study, students in the college of education at A University and S University located in Gyeonggi-do were set up 60 students. They majored in Christian education and early childhood education, and the level of education was similar in the same region and department. In the experiment, the comparison group and the experimental group were separated, and data were collected through pre-test before class and post-test after class, followed by analysis covariance(ANCOVA). Between the comparative group performing flipped learning and the experimental group performing flipped PBL, the problem solving ability and communication ability using the flipped PBL averaged 4.28 and the communication ability averaged 4.06. As a result, it was higher than each of the comparison groups, confirming that it had a significant effect. This will be able to present a flipped PBL class design as an alternative method to overcome the limitations of the existing flip learning in a changing classroom situation and to improve the communication and problem solving ability of the learner.

Apoptotic Effect of Pinosylvin at a High Concentration Regulated by c-Jun N-Terminal Kinase in Bovine Aortic Endothelial Cells (혈관내피세포에서 c-Jun N-terminal kinase에 의해 조절되는 세포사멸에 고농도의 피노실빈이 미치는 효과)

  • Song, Jina;Park, Jinsun;Jeong, Eunsil;So, A-Young;Pyee, Jaeho;Park, Heonyong
    • Journal of Life Science
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    • v.25 no.4
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    • pp.416-424
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    • 2015
  • Pinosylvin is a stilbenoid found in the Pinus species. Pinosylvin at ~pM to ~nM concentrations induces cell proliferation, cell migration and anti-inflammatory activity in endothelial cells. However, it was recently reported that pinosylvin at high concentrations (50 to 100 μM) induces cell death in bovine aortic endothelial cells. In this study, we conducted a series of experiments to discover how pinosylvin at a high concentration (50 μM) induces endothelial cell death. Pinosylvin at the high concentration was shown to induce endothelial cell apoptosis through enhancing caspase-3 activity, flip-flop of phosphatidyl serine, and nuclear fragmentation. We found that pinosylvin at the high concentration additively increased caspase-3 activity enhanced by serum-starvation or treatment with 100 μM etoposide. We also determined that pinosylvin at the high concentration promoted activations of c-Jun N-terminal kinase (JNK) and endothelial nitric oxide synthetase (eNOS). We further ran a series of experiments to find out which signaling molecule plays a critical role in the pinosylvin-induced apoptosis. We finally found that SP-600125, a JNK inhibitor, had an inhibitory effect on the pinosylvin-induced endothelial cell death, but L-NAME, an eNOS inhibitor, had no effect. These data indicate that JNK is involved in the pinosylvin-induced apoptosis. Collectively, pinosylvin at high doses induces cell apoptosis via JNK activation.