• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.12
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• pp.813-820
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• 2015

We have studied commercialization and process optimization of protective film on transparent conductive coated substrate, nano silver on flexible PET (poly ethylene terephthalate), by means of roll-to-roll micro-gravure coater. Nanosilver on flexible PET substrate is potential materials to replace ITO (indium tin oxide). Protective film is most important to maintain unique silver pattern on top of transparent PET. PSA pressure sensitive adhesives) was developed solely for nano silver on PET and protective film was successfully laminated. We have optimized all process conditions such as coating thickness, line speed and aging time & temperature via experimental design. Transparent conductive film and its protective film developed in this research are commercially available at this moment.

• Journal of Sensor Science and Technology
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• v.27 no.3
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• pp.182-185
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• 2018

Zinc oxide (ZnO) thin films have the advantages of growing at a low temperature and obtaining high charge mobility (carrier mobility) [1]. Furthermore, the zinc oxide thin film can be used to control application resistance depending on its oxygen content. ZnO has the desired physical properties, a transparent nature, with a flexible display that makes it ideal for use as a thin-film transistor. Though these transparent flexible thin-film transistors can be manufactured in various manners, manufacturing large-area transistors using a solution process is easier owing to the low cost and flexible substrate. The advantage of being able to process at low temperatures has been attracting attention as a preferred method. However, in the case of a thin-film transistor fabricated through a solution process, it is reported that charge mobility is lower. To improve upon this, a method of improving the crystallinity through heat treatment and increasing electron mobility has been reported. However, as the heat treatment temperature is relatively high at $500^{\circ}C$, an application where a flexible substrate is absent would be more suitable.

• Journal of the Korean Society for Precision Engineering
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• v.31 no.11
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• pp.975-979
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• 2014

Transparent conductive films (TCF) with excellent electrical properties and high mechanical flexibility have been widely studied because of their potential for application in optoelectronic devices such as light-emitting diodes, paper displays and organic solar cells. In this paper, we report on low-resistance and high-transparent TCF for flexible device applications. To fabricate a high-resolution roll imprinted TCF, the following steps were performed: the design and manufacture of an electroforming stamp mold, the fabrication of high-resolution roll imprinted on flexible film, the manufacture of Ag-nano paste which was filled into patterned film using a doctor blade process. Also, we was demonstrated with the successful application(ITO free organic photovoltaic) of the developed flexible TCF.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2010.11a
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• pp.415-416
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• 2010

• The Journal of Korea Robotics Society
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• v.8 no.3
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• pp.156-163
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• 2013

This paper describes a flexible visuo-haptic display module. We have developed a flexible electro-active polymer (EAP) actuator and a thin flexible visual display with $3{\times}3$ array configuration via polymer technology. The flexible actuator consists of nine EAP cells vertically moving in response to change in their thickness. The flexible display uses polymer based optical waveguide allowing light to scatter only at specific area. The display film is transparent and identically designed to the array pattern to fit for the arrangement of actuator cells. A pressure sensor is installed under the integrated module. The performance of the actuator is proved to be sufficient for satisfying perceivable range of human touch sense. The integrated system can provide interactive haptic feedback such as key pressing, contact vibration sensations, and etc. in accordance with user input.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.200-200
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• 2012

We investigated a flexible transparent film using the spinning multi-walled carbon nanotubes (MWCNTs). Spin-capable MWCNTs on iron catalyzed on a SiO2 wafer was grown by chemical vapor deposition, which was performed at $780^{\circ}C$ using C2H2 and H2 gas. The average diameter and length of MWCNTs grown on the substrate were ~15 nm and $250{\sim}300{\mu}m$, respectively. The MWCNT sheets were produced by continuously pulling out from well-aligned MWCNTs on a substrate. The MWCNT sheet films were produced simply by direct coating on the flexible film or grass. The thickness of sheet film was remarkably decreased by alcohol spraying on the surface of sheet. The alcohol splay increased transmittance and decreased electrical resistance of MWCNT sheet films. Single and double sheets were produced with sheet resistance of ~699 and ${\sim}349{\Omega}/sq$, respectively, transmittance of 81~85 % and 67~72%, respectively. The MWCNT sheet films were heated through the application of direct current power. The flexible transparent heaters showed a rapid thermal response and uniform distribution of temperature. In addition, MWCNT yarns were prepared by spinning a bundle of MWCNTs from vertically super-aligned MWCNTs on a substrate, and field emission from the tip and side of the yarns was induced in a scanning electron microscope. We found that the field emission behavior from the tip of the yarn was better than the field emission from the side. The field emission turn-on voltages from the tip and side of MWCNT yarns were 1.6 and $1.7V/{\mu}m$, respectively, after the yarn was subjected to an aging process. Both the configuration of the tip end and the body of the yarn were changed remarkably during the field emission. We also performed the field emission of the sheet films. The sheet films showed the turn on voltage of ${\sim}1.45V/{\mu}m$ during the field emission.

• Carbon letters
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• v.14 no.4
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• pp.255-258
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• 2013

Flexible transparent conducting films (TCFs) were fabricated by dip-coating single-wall carbon nanotubes (SWCNTs) onto a flexible polyethylene terephthalate (PET) film. The amount of coated SWCNTs was controlled simply by dipping number. Because the performance of SWCNT-based TCFs is influenced by both electrical conductance and optical transmittance, we evaluated the film performance by introducing a film property factor using both the number of interconnected SWCNT bundles at intersection points, and the coverage of SWCNTs on the PET substrate, in field emission scanning electron microscopic images. The microscopic film property factor was in an excellent agreement with the macroscopic one determined from electrical conductance and optical transmittance measurements, especially for a small number of dippings. Therefore, the most crucial factor governing the performance of the SWCNT-based TCFs is a SWCNT-network structure with a large number of intersection points for a minimum amount of deposited SWCNTs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.1
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• pp.80-85
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• 2022

ZnO-based transparent conductive films have been widely studied to achieve high performance optoelectronic devices such as next generation flexible and transparent display systems. In order to achieve a transparent flexible ZnO-based device, a low temperature growth technique using a flexible polymer substrate is required. In this work, high quality flexible ZnO films were grown on colorless polyimide substrate using atomic layer deposition (ALD). Transparent ZnO films grown from 80 to 200℃ were fabricated with a metal-semiconductor-metal structure photodetectors (PDs). As the growth temperature of ZnO film increases, the photocurrent of UV PDs increases, while the sensitivity of that decreases. In addition, it is found that the response times of the PDs become shorter as the growth temperature increases. Based on these results, we suggest that high-quality ZnO film can be grown below 200℃ in an atomic layer deposition system, and can be applied to transparent and flexible UV PDs with very fast response time and high photocurrent.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.389.1-389.1
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• 2016

The flexible solid state device has been widely studied as portable and wearable device applications such as display, sensor and curved circuits. A zero-bias operation without any external power consumption is a highly-demanding feature of semiconductor devices, including optical communication, environment monitoring and digital imaging applications. Moreover, the flexibility of device would give the degree of freedom of transparent electronics. Functional and transparent abrupt p/n junction device has been realized by combining of p-type NiO and n-type ZnO metal oxide semiconductors. The use of a plastic polyethylene terephthalate (PET) film substrate spontaneously allows the flexible feature of the devices. The functional design of p-NiO/n-ZnO metal oxide device provides a high rectifying ratio of 189 to ensure the quality junction quality. This all transparent metal oxide device can be operated without external power supply. The flexible p-NiO/n-ZnO device exhibit substantial photodetection performances of quick response time of $68{\mu}s$. We may suggest an efficient design scheme of flexible and functional metal oxide-based transparent electronics.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.121.2-121.2
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• 2011

Aluminum-doped Zinc Oxide (AZO) is considered as an excellent candidate to replace Indium Tin Oxide (ITO), which is widely used as transparent conductive oxide (TCO) for electronic devices such as liquid crystal displays (LCDs), organic light emitting diodes (OLEDs) and organic solar cells (OSCs). In the present study, AZO thin film was applied to the transparent electrode of a channel-shaped flexible organic solar cell using a low-temperature selective-area atomic layer deposition (ALD) process. AZO thin films were deposited on Poly-Ethylene-Naphthalate (PEN) substrates with Di-Ethyl-Zinc (DEZ) and Tri-Methyl-Aluminum (TMA) as precursors and $H_2O$ as an oxidant for the atomic layer deposition at the deposition temperature of $130^{\circ}C$. The pulse time of TMA, DEZ and $H_2O$, and purge time were 0.1 second and 20 second, respectively. The electrical and optical properties of the AZO films were characterized as a function of film thickness. The 300 nm-thick AZO film grown on a PEN substrate exhibited sheet resistance of $87{\Omega}$/square and optical transmittance of 84.3% at a wavelength between 400 and 800 nm.