Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
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Transfer of Heat-treated ZnO Thin-film Plastic Substrates for Transparent and Flexible Thin-film Transistors

투명 유연 박막 트랜지스터의 구현을 위한 열처리된 산화아연 박막의 전사방법 개발

  • Kwon, Soon Yeol (School of Electronics Engineering, Kyungpook National University) ;
  • Jung, Dong Geon (School of Electronics Engineering, Kyungpook National University) ;
  • Choi, Young Chan (School of Electronics Engineering, Kyungpook National University) ;
  • Lee, Jae Yong (School of Electronics Engineering, Kyungpook National University) ;
  • Kong, Seong Ho (School of Electronics Engineering, Kyungpook National University)
  • Received : 2018.04.04
  • Accepted : 2018.05.25
  • Published : 2018.05.31
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Abstract

Zinc oxide (ZnO) thin films have the advantages of growing at a low temperature and obtaining high charge mobility (carrier mobility) [1]. Furthermore, the zinc oxide thin film can be used to control application resistance depending on its oxygen content. ZnO has the desired physical properties, a transparent nature, with a flexible display that makes it ideal for use as a thin-film transistor. Though these transparent flexible thin-film transistors can be manufactured in various manners, manufacturing large-area transistors using a solution process is easier owing to the low cost and flexible substrate. The advantage of being able to process at low temperatures has been attracting attention as a preferred method. However, in the case of a thin-film transistor fabricated through a solution process, it is reported that charge mobility is lower. To improve upon this, a method of improving the crystallinity through heat treatment and increasing electron mobility has been reported. However, as the heat treatment temperature is relatively high at $500^{\circ}C$, an application where a flexible substrate is absent would be more suitable.

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References

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