• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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• pp.808-810
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• 2005

Inexpensive large area arrays of thin film transistors (TFTs) on flexible substrates will enable many new display products that cannot be cost effectively manufactured by conventional means. This paper presents a new approach for low cost manufacturing of electronic devices using roll-to-roll (R2R) processes exclusively. It was developed in partnership by Hewlett Packard Laboratories and Iowa Thin Film Technologies (ITFT), a solar cell manufacturer. The approach combines ITFT's unique processes for vacuum deposition and etching of semiconductors, dielectrics and metals on continuous plastic webs with a method HP has invented for the patterning and aligning the multiple layers of a TFT with sub-micron accuracy and feature size.

• 한국표면공학회지
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• 제48권1호
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• pp.23-26
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• 2015

What causes the transformation of a solar cell is the behavior difference of thermal expansion occurred between the substrate and the layer of semiconductor used in the solar cell. Therefore, the substrate has to possess a behavior of thermal expansion that is similar with that of semiconductor layer. This study employed electroforming to manufacture Fe-Ni alloy materials of different compositions. To verify the result from a finite element analysis, a two-dimensional Mo substrate was calculated and its verification experiment was conducted. The absolute values from the finite element analysis of Mo/substrate structure and its verification experiment showed a difference. However, the size of residual stress of individual substrate compositions had a similar tendency. Two-dimensional CIGS/Mo/$SiO_2$/substrate was modeled. Looking into the residual stress of CIGS layer occurred while the temperature declined from $550^{\circ}C$ to room temperature, the smallest residual stress was found with the use of Fe-52 wt%Ni substrate material.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.36-36
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• 2010

Currently, there are several newly developed energy resources for the future to replace petroleum resources such as hydrogen fuel cell, solar cell, wind power, and etc. Among them, solar cell has attracted a worldwide concern, because it has an enormous amount of resources. In general, a study of solar cells can be classified in to an area of bulk type and thin-film type. Inorganic solar cells based on silicon have been tremendously developed in technology and efficiency. However, since there are many lithographic steps, high processing temperature approximately $1000^{\circ}C$, and expensive raw materials, a manufacturing cost of device are nearly reaching a limit. Contrary to those disadvantages, organic solar cells can be manufactured at room temperature. Also, it has many advantages such as a low cost, easy fabrication of thin film, and possible manufacture to a large size. Because it can be made to be flexible, research and development on solar cells are actively in progress for the next generation. ever though an efficiency of the organic solar cell is low compared to that of inorganic one, a continuous study is needed. In this paper, we report optimal device structure obtained by a program simulation for design and development of highly efficient organic photovoltaic cells. we have also compared simulated results to experimental ones.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.286-286
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• 2011

최근 폴리머를 기판으로 하는 Flexible TFT (thin film transistor)나 3D-ULSI (three dimensional ultra large-scale integrated circuit)에서 높은 에너지 소비효율과, 빠른 반응 속도를 실현 시키기 위해 낮은 비저항(resistivity)을 가지며, 높은 홀 속도(carrier hall mobility)를 가지는 다결정 반도체 박막(poly-crystalline thin film)을 만들고자 하고 있다. 이를 실현 시키기 위해서는 높은 온도에서 장시간의 열처리가 필요하며, 이는 폴리머 기판의 문제점을 야기시킬 뿐 아니라 공정시간이 길다는 단점이 있었다. 이에 반도체 박막의 재결정화 온도를 낮춰주는 metal (Al, Ni, Co, Cu, Ag, Pd etc.,)을 이용하여 결정화 시키는 방법이 많이 연구 되어지고 있지만, 이 또한 재결정화가 이루어진 반도체 박막 안에 잔여 금속(residual metal)이 존재하게 되어 비저항을 높이고, 홀 속도를 감소시키는 단점이 있다. 이에 본 실험은 HiPIMS (High power impulse magnetron sputtering)와 PIII and D (plasma immersion ion implantation and deposition) 공정을 복합시킨 프로세스로 적은양의 금속이온주입을 통하여 재결정화 온도를 낮췄을 뿐 아니라, 잔여 하는 금속의 양도 매우 적은 다결정 반도체 박막을 만들 수 있었다. 분석 장비로는 박막의 결정화도를 측정하기 위해 GAXRD (glancing angle X-ray diffractometer)를 사용하였고, 잔여 하는 금속의 양과 화학적 결합 상태를 알아보기 위해 XPS를 통해 분석을 하였다. 마지막으로 홀 속도와 비저항을 측정하기 위해 Hall measurement와 Four-point prove를 사용하였다.

• 마이크로전자및패키징학회지
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• 제20권4호
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• pp.1-6
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• 2013

Recently, various types of flexible devices such as flexible displays, batteries, e-skins and solar cell panels have been reported. Most of the researches focus on the development of high performance flexible device. However, to realize these flexible devices, the long-term reliability should be guaranteed during the repeated deformations of flexible devices because the direct mechanical stress would be applied on the electronic devices unlike the rigid Si-based devices. Among various materials consisting electronics devices, metal electrode is one of the weakest parts against mechanical deformation because the mechanical and electrical properties of metal films degrade gradually due to fatigue damage during repeated deformations. This article reviews the researches of fatigue behavior of thin metal film, and introduces the methods to enhance the reliability of metal electrode for flexible device.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2007년도 추계학술대회 논문집
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• pp.285-288
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• 2007

박막형 태양전지 및 플렉서블 태양전지 기판으로 사용되는 금속기판의 우수성은 잘 알려져 있다. 그러나 상용 금속기판이 직면하고 있는 문제점을 보완하기 위해서 전주법으로 제조된 2원합금 금속포일을 개발하였으며, 박막형 및 플렉서블 태양전지의 기판재로 적용가능성을 확인하였다. 일반적으로 태양전지를 제조할 때 열 공정이 수행되며, 이때 기판재와 cell을 구성하는 반도체의 열팽창 계수 차이에 의한 열변형으로 결함이 발생될 수 있고, 태양전지 효율 및 수명을 저하시키는 원인이 될 수 있다. 이러한 원인이 될 수 있는 구성 재료간의 열팽창계수 차이에 의한 cell 의 변형량을 추정하기 위해 유한요소해석 방법을 사용하였다. 유한요소해석을 수행하기 위해 ALGOR 라는 해석 tool 을 사용하였다. 유한요소해석 수행에 사용된 상용 금속인 Mo, Ti, Al, SUS 포일과 전주법으로 제조된 2원합금 금속포일의 열팽창 계수는 실험을 통한 측정치이며, cell을 구성하는 반도체의 열팽창 계수와 열특성은 참고 문헌에 있는 자료들이다. 이 값들을 기반으로 cell 의 구성을 단순화시킨 가상의 태양전지가 제조 공정 온도에서 상온으로 냉각될 때의 열변형량을 계산하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.1262-1263
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• 2008

Recently film-typed dye sensitized solar cell(DSC) attracts much attention with increasing applications for its flexibility and transparency. The ZnO:Al thin film, which serves mainly as transparent conducting electrode, Aluminium-doped zinc oxide(ZnO:Al) thin film has emerged as one of the most promising transparent conducting films since it is inexpensive, mechanically stable, and highly resistant to deoxidation. In this paper ZnO:Al thin film was deposited on the polyethylene terephthalate(PET) substrate by the capacitively coupled r. f. magnetron sputtering method. The effects of gas pressure and r. f. discharge power on the morphological, electrical and optical properties of ZnO:Al thin film were studied. Especially the variation in substrate thickness after sputtering and surface morphology of the substrate were investigated and clarified. The results showed that the film deposited on the PET substrate at r. f. discharge power of 180 W showed the minimum resistivity of about $1.5{\times}10^{-3}{\Omega}-cm$ and a transmittance of about 93%.

• 한국재료학회지
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• 제18권10호
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• pp.515-520
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• 2008

We fabricated 10 nm-$TiO_2$ thin films for DSSC (dye sensitized solar cell) electrode application using ALD (atomic layer deposition) method at the low temperatures of $150^{\circ}\;and\;250^{\circ}$. We characterized the crosssectional microstructure, phase, chemical binding energy, and absorption of the $TiO_2$ using TEM, HRXRD, XPS, and UV-VIS-NIR, respectively. TEM analysis showed a 10 nm-thick flat and uniform $TiO_2$ thin film regardless of the deposition temperatures. Through XPS analysis, it was found that the stoichiometric $TiO_2$ phase was formed and confirmed by measuring main characteristic peaks of Ti $2p^1$, Ti $2p^3$, and O 1s indicating the binding energy status. Through UV-VIS-NIR analysis, ALD-$TiO_2$ thin films were found to have a band gap of 3.4 eV resulting in the absorption edges at 360 nm, while the conventional $TiO_2$ films had a band gap of 3.0 eV (rutile)${\sim}$3.2 eV (anatase) with the absorption edges at 380 nm and 410 nm. Our results implied that the newly proposed nano-thick $TiO_2$ film using an ALD process at $150^{\circ}$ had almost the same properties as thsose of film at $250^{\circ}$. Therefore, we confirmed that the ALD-processed $TiO_2$ thin film with nano-thickness formed at low temperatures might be suitable for the electrode process of flexible devices.

• 한국융합학회논문지
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• 제11권9호
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• pp.155-162
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• 2020

본 연구는 파리기후변화협약 이후 전 세계적으로 각광받고 있는 태양전지를 활용한 노후 건축물 그린 리모델링 디자인의 국내외 사례 분석을 바탕으로 향후 진행할 태양전지를 활용한 그린 리모델링 디자인 제안의 긍정적인 측면과 시사점을 확인하고자 하였다. 연구의 방법으로는 문헌연구를 바탕으로 이론적 고찰을 진행하였고, 이후 국내외 태양전지를 활용한 그린 리모델링 디자인의 사례를 조사·분석하였다. 그 결과 플렉서블한 특징을 통한 시공의 용이성, 박막전지의 투명도와 색상의 조절을 통한 심미적 효과, 자유로운 사이즈 제작으로 재료 낭비가 적은 경제적 효과, 외관의 직접 부착을 통한 건물과의 조화로운 측면을 확인할 수 있었다. 이러한 점을 토대로 박막 태양전지를 그린 리모델링 디자인에 활용하여 올 수 있는 기대효과와 유효성을 제시하고, 향후 진행할 태양전지를 활용한 노후 건축물 그린 리모델링 디자인 제안에 대한 방향성과 참고 자료로 활용되기를 기대한다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1096_1097
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• 2009

Aluminium doped zinc oxide(ZnO:Al) thin film, which is mainly used as a transparent conducting electrode in electronic devices, has many advantages compared with conventional indium tin oxide(ITO). In this paper in order to investigate the possible application of ZnO:Al thin films as a transparent conducting electrode for flexible film-typed dye sensitized solar cell (FT-DSCs), ZnO:Al and ITO thin films were prepared on the polyethylene terephthalate (PET) substrate by r. f. magnetron sputtering method. Specially one-inched FT-DSCs using either a ZnO:Al or ITO electrode were also fabricated separately under the same manufacturing conditions. Some properties of both the FT-DSCs with ZnO:Al and ITO transparent electrodes, such as conversion efficiency, fill factor, and photocurrent were measured and compared with each other. The results showed that by doping the ZnO target with 2 wt% of $Al_2O_3$, the film deposited at discharge power of 200W resulted in the minimum resistivity of $2.2\times10^{-3}\Omega/cm$ and at ransmittance of 91.7%, which are comparable with those of commercially available ITO. Two types of FT-DSCs showed nearly the same tendency of I-V characteristics and the same value of conversion efficiencies. Efficiency of FT-DSCs using ZnO:Al electrode was around 2.6% and that of fabricated FT-DSCs using ITO was 2.5%. This means that ZnO:Al thin film can be used in FT-DSCs as a transparent conducting layer.