• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.179-181
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• 2008

Major display equipment suppliers introduced equipment using inkjets for manufacturing steps such as printing polyimide alignment layers and color filters. This paper discusses how inkjets can be used in the development of flexible displays and materials printing systems designed to meet the challenges of fluids and process development.

• Journal of the Semiconductor & Display Technology
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• v.21 no.4
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• pp.1-5
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• 2022

We presented a micro hemi-sphere structure flexible film to improve the external quantum efficiency (EQE) in OLEDs. The micro hemi-sphere flexible film was fabricated with breath figure (BF) method and replica process. At 45 mg/mL of concentration, the size of the hemi-spheres was approximately 6.2 ㎛ were obtained which are the most circular shape. So, it was possible to yield the best performance with an improvement of 33 % in the EQE and the widest viewing angle ranging from 0° to 70°. As a result, the hemi-sphere film's size and distribution seem to play important roles in enhancing the EQE in OLEDs. Furthermore, the flexible hemi-sphere film based on polymeric materials could offer an effective, large-scale, mass-produced product and a simple process and approach to achieve high efficiency in flexible OLEDs.

• ETRI Journal
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• v.37 no.2
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• pp.387-394
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• 2015

A novel interconnection technology based on a 52InSn solder was developed for flexible display applications. The display industry is currently trying to develop a flexible display, and one of the crucial technologies for the implementation of a flexible display is to reduce the bonding process temperature to less than $150^{\circ}C$. InSn solder interconnection technology is proposed herein to reduce the electrical contact resistance and concurrently achieve a process temperature of less than $150^{\circ}C$. A solder bump maker (SBM) and fluxing underfill were developed for these purposes. SBM is a novel bumping material, and it is a mixture of a resin system and InSn solder powder. A maskless screen printing process was also developed using an SBM to reduce the cost of the bumping process. Fluxing underfill plays the role of a flux and an underfill concurrently to simplify the bonding process compared to a conventional flip-chip bonding using a capillary underfill material. Using an SBM and fluxing underfill, a $20{\mu}m$ pitch InSn solder SoP array on a glass substrate was successfully formed using a maskless screen printing process, and two glass substrates were bonded at $130^{\circ}C$.

• Journal of Information Display
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• v.12 no.4
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• pp.195-198
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• 2011

Proposed herein is a flexible bistable chiral splay nematic display mode with an enhanced memory retention time under external distortion. By adopting the polymerized reactive-mesogen structure mixed in a liquid crystal layer, local anchoring energy is generated on the boundary between the polymer structures, and the relaxation from the ${\pi}$-twisted state to the initial splay state could be interrupted. As a result, the memory retention time becomes significantly longer, and the stability against the external distortion is enhanced.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.461-463
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• 2009

We report on the fabrication of ZnO-based thin-film transistor (TFT) inverters with top and bottom gate structures with $Al_2O_3$ dielectrics grown by atomic layer deposition (ALD). Since the top gate ZnO-based TFT showed somewhat lower field effect mobility than that of the bottom gate device, our ZnO-based TFT inverters were designed with identical dimensions for both channels. This TFT inverter device demonstrated an high voltage gain at a low supply voltage of 5 V and clear dynamic behavior.

• Information Display
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• v.9 no.4
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• pp.29-36
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• 2008

• 한국전기화학회:학술대회논문집
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• 2003.10a
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• pp.43-43
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• 2003

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.609-613
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• 2005

Advanced mobile communication devices require a bright, high information content display in a small, light-weight, low power consumption package. In this paper we will outline our progress towards developing such a low power consumption active-matrix flexible OLED ($FOLED^{TM}$) display. Our work in this area is focused on three critical enabling technologies. The first is the development of a high efficiency long-lived phosphorescent OLED ($PHOLED{TM}$) device technology, which has now proven itself to be capable of meeting the low power consumption performance requirements for mobile display applications. Secondly, is the development of flexible active matrix backplanes, and for this our team are employing poly-Si TFTs formed on metal foil substrates as this approach represents an attractive alternative to fabricating poly-Si TFTs on plastic for the realization of first generation flexible active matrix OLED displays. Unlike most plastics, metal foil substrates can withstand a large thermal load and do not require a moisture and oxygen permeation barrier. Thirdly, the key to reliable operation is to ensure that the organic materials are fully encapsulated in a package designed for repetitive flexing. We also present progress in operational lifetime of encapsulated T-PHOLED pixels on planarized metal foil and discuss PHOLED encapsulation strategy.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.756-759
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• 2007

We have fabricated pentacene OTFT on ultra-thin flexible polyimide film with a rigid glass support. Polyimide film of the thickness of $10{\mu}m$ has formed on glass by spin coating from the solution. After the entire OTFT process, the OTFT exhibited a fieldeffect mobility of $0.4\;cm^2/Vs$, an $I_{on}/I_{off}$ ratio of $10^7$ and a subthreshold swing of 0.7 V/dec. The OTFT on polyimide film has been detached from the glass support and laminated on a plastic support of $130\;{\mu}m-thick$ PET film. After the detach process, in spite of the degrading of its field-effect mobility, the OTFT showed high $I_{on}/I_{off}$ as high $as{\sim}10^6$.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.439-442
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• 2006

We evaluated a-Si:H TFTs fabricated on polyimide substrate (PI) at the highest temperature of $160^{\circ}C$ with uniaxial and tensile strain to imitate flexible display. With tensile strain, the threshold voltage of a-Si:H TFTs have positive shift due to extra dangling bond formation in a-Si:H layer. However, no significant degradation of the subthreshold swing and effective mobility with tensile strain of a-Si:H TFTs indicates the similar level of band tail state. The metal wire with the width of $10\;{\mu}m$ for connection on flexible substrate can sustain with curvature radius 2.5 cm.