• Title/Summary/Keyword: flexible display

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Effects of thickness of GIZO active layer on device performance in oxide thin-film-transistors

  • Woo, C.H.;Jang, G.J.;Kim, Y.H.;Kong, B.H.;Cho, H.K.
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.137-137
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    • 2009
  • Thin-film transistors (TFTs) that can be prepared at low temperatures have attracted much attention due to the great potential for flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited by low field effect mobility or rapidly degraded after exposing to air in many cases. Another approach is amorphous oxide semiconductors. Amorphous oxide semiconductors (AOSs) have exactly attracted considerable attention because AOSs were fabricated at room temperature and used lots of application such as flexible display, electronic paper, large solar cells. Among the various AOSs, a-IGZO was considerable material because it has high mobility and uniform surface and good transparent. The high mobility is attributed to the result of the overlap of spherical s-orbital of the heavy pest-transition metal cations. This study is demonstrated the effect of thickness channel layer from 30nm to 200nm. when the thickness was increased, turn on voltage and subthreshold swing were decreased. a-IGZO TFTs have used a shadow mask to deposit channel and source/drain(S/D). a-IGZO were deposited on SiO2 wafer by rf magnetron sputtering. using power is 150W, working pressure is 3m Torr, and an O2/Ar(2/28 SCCM) atmosphere at room temperature. The electrodes were formed with Electron-beam evaporated Ti(30nm) and Au(70nm) structure. Finally, Al(150nm) as a gate metal was evaporated. TFT devices were heat treated in a furnace at $250^{\circ}C$ in nitrogen atmosphere for an hour. The electrical properties of the TFTs were measured using a probe-station to measure I-V characteristic. TFT whose thickness was 150nm exhibits a good subthreshold swing(S) of 0.72 V/decade and high on-off ratio of 1E+08. Field effect mobility, saturation effect mobility, and threshold voltage were evaluated 7.2, 5.8, 8V respectively.

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(8-콜레스테릴옥시카보닐)헵타노화 다당류들의 열방성 액정 특성 (Thermotropic Liquid Crystalline Properties of (8-Cholesteryloxycarbonyl)heptanoated Polysaccharides)

  • 정승용;마영대
    • 폴리머
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    • 제30권4호
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    • pp.338-349
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    • 2006
  • 셀룰로오스, 아밀로오스, 키토산, 키틴, 알긴산, 풀루란 또는 아밀로펙틴을 (8-콜레스테릴옥시카보닐)헵타 노일 클로라이드 (CH8C)와 반응시켜 전치환 또는 거의 전치환 (8-콜레스테릴옥시카보닐) 헵타노화 다당류 유도체들을 합성함과 동시에 이들의 열방성 액정의 거동들을 검토하였다. CH8C 의 경우와 같이, 아밀로펙틴 유도체를 제외한 모든 다당류 유도체들은 좌측방향의 나선구조를 지니며 온도상승에 의해 광학피치들 $({\lambda_m}'s)$이 감소하는 단방성 콜레스테릴 상들을 형성하였다. 아밀로펙틴 유도체도 좌측방향의 나선구조를 지닌 단방성 콜레스테릴 상을 형성하나 다른 다당류 유도체들과 달리 콜레스테릴 상의 전 범위에서 반사색깔들을 나타내지 않았다. 이러한 사실은 콜레스테릴 그룹에 의한 나선의 비틀림력은 아밀로펙틴 중의 분기구조에 민감하게 의존함을 시사한다. 다당류 유도체들에서 관찰되는 액정 상의 열적 안정성과 질서도, 동일한 온도에서의 ${\lambda}_m$ 의 크기 그리고 ${\lambda}_m$의 온도 의존성은 콜레스테릴 그룹들을 유연한 스페이서들을 통하여 유연한 흑은 반강직한 골격들에 도입시켜 얻은 고분자들에 대해 보고된 결과와 전혀 다르다. 이들의 결과를 주사슬과 곁사슬의 화학구조 그리고 주사슬의 유연성의 차이와 관련하에서 검토하였다.

20대 여성의 신발종류에 따른 족저압 영역별 비교 연구 (A comparison study for mask plantar pressure measures to the difference of shoes in 20 female)

  • 김용재;지진구;김정태;홍준희;이중숙;이훈식;박승범
    • 한국운동역학회지
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    • 제14권3호
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    • pp.83-98
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    • 2004
  • The purpose of this study was to investigate the test-retest of plantar pressures using the F-Scan system over speeds and plantar regions. 6 healthy female subjects in 20's were recruited for the study. Plantar pressure measurements during locomotor activities can provide information concerning foot function, particularly if the timing and magnitude of the loading profile can be related to the location of specific foot structures such as the metatarsal heads. The Tekscan F-Scan system consists of a flexible, 0.18mm thick sole-shape having 1260 pressure sensors, the sensor insole was trimmed to fit the subjects' right. left shoes - sneakers shoes & dress shoes. It was calibrated by the known weight of the test subject standing on one foot. The Tekscan measurements show the insole pressure distribution as a function of the time. This finding has important implications for the development of plantar pressure test protocols where the function of the forefoot is important. According to the result of analysis it is as follows 1) Center of force trajectory in women's dress shoes display direct movement, compare with center of force trajectory in Sneaker shoes displays a little bit curved slow pronation movement. Sneaker shoes in forefoot part display very quick supination movement, therefore, this shoes effects negative effectiveness for ankle's stability Considering center of force trajectory analyzing the more center of force close straight line, the more movement can be quick movement for locomotion. For foot pressure distribution, center of force trajectory in locomotion is better to curved trajectory with pronation movement. So sneaker shoes style is good shoes considering center of pressure distribution trajectory compare with women's dress shoes. 2) Women's dress shoes increased peak pressure in medial, this is effected by high hill's height. The more increased women's dress shoes's height, the more women's peak pressure will increase, pronation can increase compare with before. Supination movement increase, this focused pressure in lateral, also, supination increased more. If the supination movement increased, foot pressure focused in lateral, therefore, it is appeared force distribution in gait direction. This is bad movement in foot's stability. 3) Women's dress shoes in landing phase displayed a long time, this is when women's dress shoes wear, gait movement is unbalance, so, landing phase displayed a long time. For compensation in gait, swing phase quick movement. 4) Women's dress shoes displayed peak pressure distribution in lateral of rearfoot part, Sneakers shoes displayed peak pressure distribution in medial of forefoot part. Its results has good impact absorption compare with women's dress shoes. In forefoot part, sneakers shoes has good propulsive force compare with women's dress shoes.

플라스틱기판 미세회로구조 제조를 위한 소프트 석판 기술의 적용 (Soft-lithography for Manufacturing Microfabricated-Circuit Structure on Plastic Substrate)

  • 박민정;주형규;박진원
    • Korean Chemical Engineering Research
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    • 제50권5호
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    • pp.929-932
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    • 2012
  • 화면표시장치 제조에 널리 이용되고 있는 미세구조 제조향 노광공정을 대신할 기반기술을 개발하고자 한다. 저가의 Polycarbonate 기판에 미세구조를 제조하기 위하여, Spin Coating으로 Polystyrene 박막을 형성하고 박막 위에 Polydimethylsiloxane 주형으로 소프트석판술을 적용하였다. 제조된 구조에 나노입자들을 배열하기 위해 계면작용을 이용하고자 하므로, 구조의 표면을 화학반응에 의해 소수성으로 개질하였다. 소수성으로의 개질은 Polystyrene 표면을 과망간칼륨으로 처리하고 Aminopropyltriethoxysilane을 반응시켜서 수행되었다. 개질된 특성은 X선광전자분광기로 분석되었다. 개질된 표면에서 친수성나노입자들이 분산되어 있는 수용액을 마이크로리터 단위의 방울로 떨어뜨리고, 수용액을 증발시킨다. 증발과정에서 계면상호작용과 미세구조의 물리적 유도로 특정 영역에 나노입자들이 배열되었다. 그리고, 이 배열의 전기적 응용을 확인하였다.

Metal Oxide Thin Film Transistor with Porous Silver Nanowire Top Gate Electrode for Label-Free Bio-Relevant Molecules Detection

  • 유태희;김정혁;상병인;최원국;황도경
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.268-268
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    • 2016
  • Chemical sensors have attracted much attention due to their various applications such as agriculture product, cosmetic and pharmaceutical components and clinical control. A conventional chemical and biological sensor is consists of fluorescent dye, optical light sources, and photodetector to quantify the extent of concentration. Such complicated system leads to rising cost and slow response time. Until now, the most contemporary thin film transistors (TFTs) are used in the field of flat panel display technology for switching device. Some papers have reported that an interesting alternative to flat panel display technology is chemical sensor technology. Recent advances in chemical detection study for using TFTs, benefits from overwhelming progress made in organic thin film transistors (OTFTs) electronic, have been studied alternative to current optical detection system. However numerous problems still remain especially the long-term stability and lack of reliability. On the other hand, the utilization of metal oxide transistor technology in chemical sensors is substantially promising owing to many advantages such as outstanding electrical performance, flexible device, and transparency. The top-gate structure transistor indicated long-term atmosphere stability and reliability because insulator layer is deposited on the top of semiconductor layer, as an effective mechanical and chemical protection. We report on the fabrication of InGaZnO TFTs with silver nanowire as the top gate electrode for the aim of chemical materials detection by monitoring change of electrical properties. We demonstrated that the improved sensitivity characteristics are related to the employment of a unique combination of nano materials. The silver nanowire top-gate InGaZnO TFTs used in this study features the following advantages: i) high sensitivity, ii) long-term stability in atmosphere and buffer solution iii) no necessary additional electrode and iv) simple fabrication process by spray.

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그래핀을 이용한 전자패키징 기술 연구 동향 (Trends of Researches and Technologies of Electronic Packaging Using Graphene)

  • 고용호;최경곤;김상우;유동열;방정환;김택수
    • 마이크로전자및패키징학회지
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    • 제23권2호
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    • pp.1-10
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    • 2016
  • This paper reports the trends of researches and technologies of electronic packaging using graphene. Electronic packaging is to provide the signal and electrical current among electronic components, to remove the heat in electronic systems or components, to protect and support the electronic components from external environment. As the required functions and performances of electronic systems or components increase, the electronic packaging has been intensively attracted attention. Therefore, technologies such as miniaturization, high density, Pb-free material, high reliability, heat dissipation and so on, are required in electronic packaging. Recently, graphene, which is a single two-dimensional layer of carbon atoms, has been extensively investigated because of its superior mechanical, electrical and thermal properties. Until now, many studies have been reported the applications using graphene such as flexible display, electrode, super capacitor, composite materials and so on. In this paper, we will introduce and discuss various studies on recent technologies of electronic packaging using graphene for solving the required issues.

Enhanced Electrical Conductivity of Gold Doped Graphene Films by Microwave Treatment

  • Kim, Yoo-Seok;Song, Woo-Seok;Cha, Myoung-Jun;Lee, Su-Il;Cho, Ju-Mi;Kim, Sung-Hwan;Park, Chong-Yun
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.188-188
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    • 2012
  • Graphene, with its unique physical and structural properties, has recently become a proving ground for various physical phenomena, and is a promising candidate for a variety of electronic device and flexible display applications. Compared to indium tin oxide (ITO) electrodes, which have a typical sheet resistance of ${\sim}60{\Omega}$/sq and ~85% transmittance in the visible range, the chemical vapor deposition (CVD) synthesized graphene electrodes have a higher transmittance in the visible to IR region and are more robust under bending. Nevertheless, the lowest sheet resistance of the currently available CVD graphene electrodes is higher than that of ITO. In this study, we report a creative strategy, irradiation of microwave at room temperature under vacuum, for obtaining size-homogeneous gold nano-particle doping on graphene. The gold nano-particlization promoted by microwave irradiation was investigated by transmission electron microscopy, electron energy loss spectroscopy elemental mapping. These results clearly revealed that gold nanoparticle with ${\geq}30$ nm in mean size were decorated along the surface of the graphene after microwave irradiation. The fabrication high-performance transparent conducting film with optimized doping condition showed a sheet resistance of ${\geq}100{\Omega}$/sq. at ~90% transmittance. This approach advances the numerous applications of graphene films as transparent conducting electrodes.

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Glass Transition Behavior of Dendritic Polymers Containing Mobile Aliphatic Polyether Cores and Glassy Peripheral Polystyrenes

  • Song, Jie;Cho, Byoung-Ki
    • Bulletin of the Korean Chemical Society
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    • 제29권6호
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    • pp.1167-1172
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    • 2008
  • We investigated the glass transition temperatures ($T_g$) of dendrons consisting of conformationally mobile aliphatic polyether dendritic cores plus glassy peripheral polystyrenes (PSs), and linear PSs in the molecular weight range of 1000-8500 g/mol. We compared their $T_g$ behavior depending on their polymeric architecture. The linear PSs show a typical growth of $T_g$ up to 92.5 ${^{\circ}C}$ as the molecular weight increases to 8300 g/mol, while the dendrons display nearly constant $T_g$ values of 58-61 ${^{\circ}C}$, despite the increase of molecular weight with each generation. The striking contrast of Tg behavior would be mainly attributed to the fact that the dendrons keep the ratio of $N_e$/M ($N_e$: number of peripheral chain ends, M: molecular weight) over all the generations. Additionally, for the influence of dendritic spacers on glass transition temperature we prepared dimeric PSs with different linkage groups such as aliphatic ether, ester and amide bonds. We found that the dimer with the ether spacer exhibited the lowest glass transition at 55.4 ${^{\circ}C}$, while the amide linked dimer showed the highest glass transition temperature at 74.2 ${^{\circ}C}$. This indicates that the peripheral PS chains are effectively decoupled by the conformationally flexible ether spacer. The results from this study demonstrated that polymeric architecture and dendritic core structures play a crucial role in the determination of glass transition behavior, providing a strategy for the systematic engineering of polymer chain mobility.

Fabrication from the Hybrid Quantum Dots of CdTe/ZnO/G.O Quasi-core-shell-shell for the White LIght Emitting DIodes

  • Kim, Hong Hee;Lee, YeonJu;Lim, Keun yong;Park, CheolMin;Hwang, Do Kyung;Choi, Won Kook
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.189-189
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    • 2016
  • Recently, many researchers have shown an increased interest in colloidal quantum dots (QDs) due to their unique physical and optical properties of size control for energy band gap, narrow emission with small full width at half maxima (FWHM), broad spectral photo response from ultraviolet to infrared, and flexible solution processing. QDs can be widely used in the field of optoelectronic and biological applications and, in particular, colloidal QDs based light emitting diodes (QDLEDs) have attracted considerable attention as an emerging technology for next generation displays and solid state lighting. A few methods have been proposed to fabricate white color QDLEDs. However, the fabrication of white color QDLEDs using single QD is very challenging. Recently, hybrid nanocomposites consisting of CdTe/ZnO heterostructures were reported by Zhimin Yuan et al.[1] Here, we demonstrate a novel but facile technique for the synthesis of CdTe/ZnO/G.O(graphene oxide) quasi-core-shell-shell quantum dots that are applied in the white color LED devices. Our best device achieves a maximum luminance of 484.2 cd/m2 and CIE coordinates (0.35, 0.28).

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도핑된 그래핀 투명전극의 복원력 시험에 대한 연구

  • 김영훈;박준균;정영종;노용한
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.330-330
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    • 2016
  • 투명전극은 디스플레이, 터치스크린, 태양전지 등 폭넓은 분야에서 응용되고 있어 현재 각광 받는 연구 주제 중 하나이다. 특히, ITO(인듐산화물)을 이용한 투명전극은 뛰어난 효율성 때문에 가장 주목 받고 있는 전극 형태 중 하나이다. 그러나 ITO투명전극은 인듐 소재의 희소성으로 인한 자원고갈문제 및 복원력, 투명도 등에서 취약점을 지니고 있는 것으로 보고되어 있다. 이러한 ITO 투명전극의 취약점을 보완하고, 동시에 플렉서블 디스플레이(Flexible Display) 소자에 적용 가능한 대체 투명전극에 관한 연구는 현재 가장 주목할 만한 가치가 있는 연구분야로 부각되고 있다. 본 연구에서는 대체 투명전극 중 하나로 그래핀 투명전극(Graphene Transparent Electrode)을 주목했다. PEN(Polyethylene Naphthalate) 투명기판 상에 Wet-Transfer형식으로 그래핀을 전사하여 그래핀 투명전극을 구현했으며, 복원력 확인을 위해 그래핀에 2가지 (Compressive/Tensile) 압력을 가하며 구부러짐 실험(Bending Test)을 진행하며 그래핀 투명전극의 저항값을 측정했다. 일반 금속전극의 경우, 일정한 수준 이상의 압력 또는 구부러짐이 반복되는 실험의 횟수가 증가되면 원래의 복원력을 상실하며, 저항값이 상승하는 것으로 보고된바 있다. 그러나 이번 연구에서는 그래핀 투명전극을 사용해 PEN 기판 위에 투명전극을 제작한 경우, 일정한 수준의 구부러짐 반복횟수(~1,000회) 및 구부러짐 정도(~10%) 하에서 저항값이 일정하게 유지됨을 확인할 수 있었다. 별도로, 기존에 알려져 있던 순수 그래핀(Pristine Graphene)의 취약점 중 하나인 높은 저항값을 우려하여 본 연구에서는 그래핀에 도핑을 하고, 그 영향을 분석해 보았다. 그 동안 그래핀 도핑법에 대한 적지않은 연구들이 진행되었으며, 본 연구에서는 TFSA(Bis(trifluoromethanesulfonyl)amide)라는 물질을 이용한 그래핀 도핑법을 채택했다. 실험 결과, 도핑된 그래핀 투명전극은 위와 같은 수준의 그래핀 본연의 복원력을 유지하면서 저항값은 순수 그래핀 대비 약 70% 정도 낮아짐을 확인할 수 있었다. 본 연구를 통해 그래핀 투명전극이 그래핀 고유의 특성인 높은 투명도와 복원력, 도핑으로 인한 저항값 감소가능성을 확인함으로써, 그래핀 투명전극이 ITO 투명전극의 좋은 대체자가 될 수 있는 가능성을 확인할 수 있었다.

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