• Title/Summary/Keyword: flash storage

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A File Recovery Technique for Digital Forensics on NAND Flash Memory (NAND 플래시 메모리에서 디지털 포렌식을 위한 파일 복구기법)

  • Shin, Myung-Sub;Park, Dong-Joo
    • Journal of KIISE:Databases
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    • v.37 no.6
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    • pp.292-299
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    • 2010
  • Recently, as flash memory is used as digital storage devices, necessity for digital forensics is growing in a flash memory area for digital evidence analysis. For this purpose, it is important to recover crashed files stored on flash memory efficiently. However, it is inefficient to apply the hard disk based file recovery techniques to flash memory, since hard disk and flash memory have different characteristics, especially flash memory being unable to in-place update. In this paper, we propose a flash-aware file recovery technique for digital forensics. First, we propose an efficient search technique to find all crashed files. This uses meta-data maintained by FTL(Flash Translation Layer) which is responsible for write operation in flash memory. Second, we advise an efficient recovery technique to recover a crashed file which uses data location information of the mapping table in FTL. Through diverse experiments, we show that our file recovery technique outperforms the hard disk based technique.

FAST : A Log Buffer Scheme with Fully Associative Sector Translation for Efficient FTL in Flash Memory (FAST :플래시 메모리 FTL을 위한 완전연관섹터변환에 기반한 로그 버퍼 기법)

  • Park Dong-Joo;Choi Won-Kyung;Lee Sang-Won
    • The KIPS Transactions:PartA
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    • v.12A no.3 s.93
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    • pp.205-214
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    • 2005
  • Flash memory is at high speed used as storage of personal information utilities, ubiquitous computing environments, mobile phones, electronic goods, etc. This is because flash memory has the characteristics of low electronic power, non-volatile storage, high performance, physical stability, portability, and so on. However, differently from hard disks, it has a weak point that overwrites on already written block of flash memory is impossible to be done. In order to make an overwrite possible, an erase operation on the written block should be performed before the overwrite, which lowers the performance of flash memory highly. In order to solve this problem the flash memory controller maintains a system software module called the flash translation layer(FTL). Of many proposed FTL schemes, the log block buffer scheme is best known so far. This scheme uses a small number of log blocks of flash memory as a write buffer, which reduces the number of erase operations by overwrites, leading to good performance. However, this scheme shows a weakness of low page usability of log blocks. In this paper, we propose an enhanced log block buffer scheme, FAST(Full Associative Sector Translation), which improves the page usability of each log block by fully associating sectors to be written by overwrites to the entire log blocks. We also show that our FAST scheme outperforms the log block buffer scheme.

Fault Test Algorithm for MLC NAND-type Flash Memory (MLC NAND-형 플래시 메모리를 위한 고장검출 테스트 알고리즘)

  • Jang, Gi-Ung;Hwang, Phil-Joo;Chang, Hoon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.49 no.4
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    • pp.26-33
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    • 2012
  • As the flash memory has increased the market share of data storage in imbedded system and occupied the most of area in a system, It has a profound impact on system reliability. Flash memory is divided NOR/NAND-type according to the cell array structure, and is classified as SLC(Single Level Cell)/MLC(Multi Level Cell) according to reference voltage. Although NAND-type flash memory is slower than NOR-type, but it has large capacity and low cost. Also, By the effect of demanding mobile market, MLC NAND-type is widely adopted for the purpose of the multimedia data storage. Accordingly, Importance of fault detection algorithm is increasing to ensure MLC NAND-type flash memory reliability. There are many researches about the testing algorithm used from traditional RAM to SLC flash memory and it detected a lot of errors. But the case of MLC flash memory, testing for fault detection, there was not much attempt. So, In this paper, Extend SLC NAND-type flash memory fault detection algorithm for testing MLC NAND-type flash memory and try to reduce these differences.

Efficiently Managing the B-tree using Write Pattern Conversion on NAND Flash Memory (낸드 플래시 메모리 상에서 쓰기 패턴 변환을 통한 효율적인 B-트리 관리)

  • Park, Bong-Joo;Choi, Hae-Gi
    • Journal of KIISE:Computer Systems and Theory
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    • v.36 no.6
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    • pp.521-531
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    • 2009
  • Flash memory has physical characteristics different from hard disk where two costs of a read and write operations differ each other and an overwrite on flash memory is impossible to be done. In order to solve these restrictions with software, storage systems equipped with flash memory deploy FTL(Flash Translation Layer) software. Several FTL algorithms have been suggested so far and most of them prefer sequential write pattern to random write pattern. In this paper, we provide a new technique to efficiently store and maintain the B-tree index on flash memory. The operations like inserts, deletes, updates of keys for the B-tree generate random writes rather than sequential writes on flash memory, leading to inefficiency to the B-tree maintenance. In our technique, we convert random writes generated by the B-tree into sequential writes and then store them to the write-buffer on flash memory. If the buffer is full later, some sequential writes in the buffer will be issued to FTL. Our diverse experimental results show that our technique outperforms the existing ones with respect to the I/O cost of flash memory.

Design of OpenStack Cloud Storage Systems - Applying Infiniband Storage Network and Storage Virtualization Performance Evaluation (인피니밴드 스토리지 네트워크를 적용한 오픈스택 클라우드 스토리지 시스템의 설계 및 스토리지 가상화 성능평가)

  • Heo, Hui-Seong;Lee, Kwang-Soo;Pirahandeh, Mehdi;Kim, Deok-Hwan
    • KIISE Transactions on Computing Practices
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    • v.21 no.7
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    • pp.470-475
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    • 2015
  • Openstack is an open source software that enables developers to build IaaS(Infrastructure as a Service) cloud platforms. Openstack can virtualize servers, networks and storages, and provide them to users. This paper proposes the structure of Openstack cloud storage system applying Infiniband to solve bottlenecking that may occur between server and storage nodes when the server performs an I/O operation. Furthermore, we implement all flash array based high-performance Cinder storage volumes which can be used at Nova virtual machines by applying distributed RAID-60 structures to three 8-bay SSD storages and show that Infiniband storage networks applied to Openstack is suitable for virtualizing high-performance storage.

Design of an Intelligent Ambulatory Monitoring System Using Flash Memory Card (Flash Memory Card를 이용한 Intelligent Ambulatory Monitoring 시스템 설계)

  • Song, G.K.;Lee, K.J.;Yoon, H.R.
    • Proceedings of the KOSOMBE Conference
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    • v.1997 no.05
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    • pp.330-333
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    • 1997
  • In this paper, we designed a low power and small-sized, light weighted intelligent ambulatory monitoring system using a flash memory card. The system's hardware specifications are as follows: 2 channels, 8bit/250Hz sampling rate, 20M byte storage capacity, a single-chip microcontroller (68HC11E9). To easily interface with PC based system, FFS(Flash File System) was used. We obtained the QRS detection rate of 99.14 through the evaluation with MIT/BIH database.

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Performance Improvement of Asynchronous Mass Memory Module Using Error Correction Code (에러 보정 코드를 이용한 비동기용 대용량 메모리 모듈의 성능 향상)

  • Ahn, Jae Hyun;Yang, Oh;Yeon, Jun Sang
    • Journal of the Semiconductor & Display Technology
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    • v.19 no.3
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    • pp.112-117
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    • 2020
  • NAND flash memory is a non-volatile memory that retains stored data even without power supply. Internal memory used as a data storage device and solid-state drive (SSD) is used in portable devices such as smartphones and digital cameras. However, NAND flash memory carries the risk of electric shock, which can cause errors during read/write operations, so use error correction codes to ensure reliability. It efficiently recovers bad block information, which is a defect in NAND flash memory. BBT (Bad Block Table) is configured to manage data to increase stability, and as a result of experimenting with the error correction code algorithm, the bit error rate per page unit of 4Mbytes memory was on average 0ppm, and 100ppm without error correction code. Through the error correction code algorithm, data stability and reliability can be improved.

Dynamic Threshold based Even-wear Leveling Policies (동적 임계값을 이용한 메모리 소거)

  • Park, Je-Ho
    • Journal of the Semiconductor & Display Technology
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    • v.6 no.2 s.19
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    • pp.5-10
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    • 2007
  • According to the advantageous features of flash memory, its exploitation and application in mobile and ubiquitous related devices as well as voluminous storage devices is being increased rapidly. The inherent properties that are determined by configuration of flash memory unit might restrict the promising expansion in its utilization. In this paper, we study policies based on threshold values, instead of using global search, in order to satisfy our objective that is to decrease the necessary processing cost or penalty for recycling of flash memory space at the same time minimizing the potential degradation of performance. The proposed cleaning methods create partitions of candidate memory regions, to be reclaimed as free, by utilizing global or dynamic threshold values. The impact of the proposed policies is evaluated through a number of experiments, the composition of the optimal configuration featuring the methods is tested through experiments as well.

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F-Tree : Flash Memory based Indexing Scheme for Portable Information Devices (F-Tree : 휴대용 정보기기를 위한 플래시 메모리 기반 색인 기법)

  • Byun, Si-Woo
    • Journal of Information Technology Applications and Management
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    • v.13 no.4
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    • pp.257-271
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    • 2006
  • Recently, flash memories are one of best media to support portable computer's storages in mobile computing environment. The features of non-volatility, low power consumption, and fast access time for read operations are sufficient grounds to support flash memory as major database storage components of portable computers. However, we need to improve traditional Indexing scheme such as B-Tree due to the relatively slow characteristics of flash operation as compared to RAM memory. In order to achieve this goal, we devise a new indexing scheme called F-Tree. F-Tree improves tree operation performance by compressing pointers and keys in tree nodes and rewriting the nodes without a slow erase operation in node insert/delete processes. Based on the results of the performance evaluation, we conclude that F-Tree indexing scheme outperforms the traditional indexing scheme.

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