• 대한임베디드공학회논문지
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• 제10권3호
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• pp.171-178
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• 2015

Recently NAND flash memory has been found to be the primary cause of low performance in the smart device. NAND flash memory is different from each other the execution time of I/O operations that flash file system is required. Therefore, it is necessary to compare and analyze the flash file system I/O performance for the efficient I/O on smart device. In this paper, it was tested and analyzing the I/O performance of the YAFFS2, JFFS2, UBIFS. Experimental results most read I/O performance is good, but the writing I/O performance is not good. For UBIFS, showed a more good I/O performance compared to other flash file system.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2008년도 하계종합학술대회
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• pp.647-648
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• 2008

Traditional FTL and flash file systems based of NAND flash memory may not be adaptively applied to new fusion flash memory which combines the advantages of NAND and NOR flash memory. In this paper, we propose a FTL performance measurement tool using Multi Block Erase function of fusion flash memory. The performance measurement tool shows that multi block erase function can be effectively utilized in performance enhancement of garbage collection for fusion flash memory.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 컴퓨터소사이어티 추계학술대회논문집
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• pp.15-18
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• 2003

Flash memory becomes more important for its fast access speed, low-power, shock resistance and nonvolatile storage. But its native restrictions that have limited 1ifetime, inability of update in place, different size unit of read/write and erase operations need to managed by FTL(Flash Translation Layer). FTL has to control the wear-leveling, address mapping, bad block management of flash memory. In this paper, we focuses on the fast access to address mapping table and proposed the way of faster valid page search in the flash memory using the VPLT(Valid Page Lookup Table). This method is expected to decrease the frequency of access of flash memory that have an significant effect on performance of read and block-transfer operations. For the validations, we implemented the FTL based on Windows CE platform and obtained an improved result.

• Journal of Computing Science and Engineering
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• 제3권3호
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• pp.181-194
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• 2009

Flash memory is increasingly being used in a wide range of storage applications because of its low power consumption, low access latency, small form factor, and high shock resistance. However, the current platforms for flash memory software development do not meet the ever-increasing requirements of flash memory applications. This paper presents three different hardware platforms for flash memory/NVRAM (non-volatile RAM) software development that overcome the limitations of the current platforms. The three platforms target different types of host system and provide various features that facilitate the development and verification of flash memory/NVRAM software. In this paper, we also demonstrate the usefulness of the three platforms by implementing three different types of storage system (one for each platform) based on them.

• 대한전자공학회논문지SD
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• 제41권3호
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• pp.8-8
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• 2004

본 논문에서는 새로운 interpolation-2 방식의 비교기 구조를 제안하여 칩 면적과 전력 소모를 줄이며 오류정정 회로를 내장하는 6-비트 70㎒ ADC를 설계하였다. Interpolation 비교기를 적용하지 않은 flash ADC의 경우 2n개의 저항과 2n -1개의 비교기가 사용되며 이는 저항의 수와 비교기의 수에 비례하여 많은 전력과 큰 면적을 필요로 하고 있다. 또한, interpolation-4 비교기를 적용한 flash ADC는 면적은 작으나 단조도, SNR, INL, DNL 특성이 떨어진다는 단점이 있었다. 본 논문에서 설계한 interpolation-2 방식의 ADC는 저항, 비교기, 앰프, 래치, 오류정정 회로, 온도계코드 디텍터와 인코더로 구성되며, 32개의 저항과 31개의 비교기를 사용하였다. 제안된 회로는 0.18㎛ CMOS 공정으로 제작되어 3.3V에서 40mW의 전력소모로 interpolation 비교기를 적용하지 않은 flash ADC에 비해 50% 개선되었으며, 칩 면적도 20% 감소되었다. 또한 노이즈에 강한 오류정정 회로가 사용되어 interpolation-4 비교기를 적용한 flash ADC 에 비해 SNR이 75% 개선된 결과를 얻었다.

• 대한전자공학회논문지SD
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• 제45권3호
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• pp.94-100
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• 2008

컴팩트 플래시 메모리와 같은 휴대용 저장장치 표준에서는 플래시 메모리 시스템 소프트웨어인 FTL(Flash Translation Layer)이 필요하다. 본 논문에서는 논리 주소를 물리 주소로 빠르게 변환하기 위해 Clustered Hash Table과 2단계 소프트웨어 캐시 기법을 사용하여 FTL을 설계하였다. 실험 결과 본 논문에서 제안한 CFTL이 잘 알려진 NFTL과 AFTL보다 각각 13%, 8% 이상 주소 변환 성능이 빠르고 AFTL보다 메모리 사용량을 75% 이상 감소시켰다.

• Journal of Information Technology Applications and Management
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• 제13권2호
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• pp.115-126
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• 2006

Recently, flash memories are one of best media to support portable computer's storages in mobile computing environment. We propose a new transaction recovery scheme for a flash memory database environment which is based on a flash media file system. We improved traditional shadow paging schemes by reusing old data pages which are supposed to be invalidated in the course of writing a new data page in the flash file system environment. In order to reuse these data pages, we exploit deferred cleaning list structure in our flash memory shadow paging (FMSP) scheme. FMSP scheme removes the additional storage overhead for keeping shadow pages and minimizes the I/O performance degradation caused by data page distribution phenomena of traditional shadow paging schemes. We also propose a simulation model to show the performance of FMSP. Based on the results of the performance evaluation, we conclude that FMSP outperforms the traditional scheme.

• 한국안전학회지
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• 제15권3호
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• pp.78-82
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• 2000

The flash point is an important property and hazardous index of a flammable liquid. The flash points are used by virtually all the environmental, health, and safety organizations in both government and industry to classify flammable liquids for safety and transportation regulations. The basics of all flash points behavior are concerned with the vapor pressure and explosive limits. The flash points of pure components and the mixture of solvents can be calculated with the use of the laws of Raoult, Dalton and Le Chatelier. In this paper, experimentally determined lower flash points of a p-xylene and epoxy resin system were compared with the calculated values by using Raoults law. Calculated lower flash points were in reasonable agreement with the observed values.

• Journal of Information Processing Systems
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• 제14권3호
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• pp.631-644
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• 2018

Many studies on flash memory-based buffer replacement algorithms that consider the characteristics of flash memory have recently been developed. Conventional flash memory-based buffer replacement algorithms have the disadvantage that the operation speed slows down, because only the reference is checked when selecting a replacement target page and either the reference count is not considered, or when the reference time is considered, the elapsed time is considered. Therefore, this paper seeks to solve the problem of conventional flash memory-based buffer replacement algorithm by dividing pages into groups and considering the reference frequency and reference time when selecting the replacement target page. In addition, because flash memory has a limited lifespan, candidates for replacement pages are selected based on the number of deletions.

• 한국컴퓨터정보학회논문지
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• 제24권3호
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• pp.1-9
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• 2019

This paper presents three potential risks in an environment that simultaneously performs the garbage collection and wear leveling in NAND flash memory. These risks may not only disturb the lifespan improvement of NAND flash memory, but also impose an additional overhead of page migrations. In this paper, we analyze the interference of garbage collection and wear leveling and we also provide two theoretical considerations for lifespan prolongation of NAND flash memory. To prove two solutions of three risks, we construct a simulation, based on DiskSim 4.0 and confirm realistic impacts of three risks in NAND flash memory. In experimental results, we found negative impacts of three risks and confirmed the necessity for a coordinator module between garbage collection and wear leveling for reducing the overhead and prolonging the lifespan of NAND flash memory.