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The Prediction of Lower Flash Points by Optimization Method

  • Ha, Dong-Myeong;Lee, Sung-Jin
    • International Journal of Safety
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    • v.8 no.2
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    • pp.15-19
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    • 2009
  • The flash point is the most widely used flammability property for the evaluation of the flammability hazard of combustible liquid mixtures. In this paper, the reported flash points for the the binary systems, ethylbenzene+n-butanol and ethylbenzene+n-hexanol were correlated by the optimization method. The optimization method based on the van Laar and Wilson equations were compared with the Raoult's law. The calculated values based on the optimization method were found to be better than those based on the Raoult's law.

Flash Temperature of the Cam-Roller Contacting Surface in a Marine Diesel Engine (박용 디젤기관 캠-롤러 접촉부의 표면 상승 온도)

  • 김남식;김민남;구영필
    • Journal of Advanced Marine Engineering and Technology
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    • v.26 no.2
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    • pp.200-208
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    • 2002
  • The flash temperature of the cam-roller contacting surface for a marine diesel engine was analysed numerically. The elastohydrodynamic lubrication pressure and film thickness were adopted to get more accurate frictional coefficient, heat flux and temperature distribution. The maximum flash temperature was increased with both the increasing slip ratio of the contacting surfaces and increasing external load. This study tells that the temperature analysis is an indispensable procedure in designing elastohydrodynamic lubrication contacts on which the slip occurs.

FlashMn: Flash Memory Data Management Program for PDP Control (FlashMn: PDP 제어를 위한 플래시 메모리 데이터 관리 프로그램)

  • Bak, Gi-Seong;Han, Young-Sun;Jung, Dong-Ha;Kim, Seon-Wook;Kim, Tae-Jin
    • Proceedings of the Korea Information Processing Society Conference
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    • 2009.11a
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    • pp.891-892
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    • 2009
  • 본 논문에서는 PDP 제어를 위해 사용되는 플래시 메모리의 데이터를 원활하게 관리하고 결과 데이터를 플래시 메모리에 저장하는 프로그램인 FlashMn의 기능 및 활용 방안에 대하여 설명한다.

Usability Research of Onco Flash in SPECT (SPECT 검사에서 Onco Flash의 유용성과 질적 향상 평가)

  • Noh, Ik-Sang;Cha, Eun-Sun;Kim, Ki;Choi, Choon-Ki;Suk, Jae-Dong
    • The Korean Journal of Nuclear Medicine Technology
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    • v.13 no.1
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    • pp.3-8
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    • 2009
  • Purpose: Onco flash shortens a scan time with half and there is a possibility of getting the data which corresponds in existing. The experiment which makes the image whose Onco Flash is excellent OSEM tried, as changes parameter of time, iteration. After reconstituting an image, produces FWHM and executes an evaluation. Materials and Methods: Siemens e.cam gamma camera, standard Jaszczak phantom and spatial resolution phantom was used. In order for the bubble not to enter, implants 2 mCi and volume 0.25 cc $^{99m}Tc$ respectively in line 3 to spatial resolution phantom. Put on that phantom on the table correctly, and acquires an image. 15 mCi putting in distilled water to mix $^{99m}Tc$ well in Jaszczak phantom and acquires image just like spatial resolution phantom. Reconstructs and converts the image to digital image as Sante program. Produce FWHM and evaluate by Amide. Results: The non-scattered image shows better FWHM value than scattered image. As time increases from 10 sec to 30 sec for 5sec interval, FWHM appeared to 30.1, 28.5, 24.5, 23.6, 23.4 mm. At the standard iteration value 4, OSEM FWHM shows 8.0 mm, and Onco Flash is 8.1 mm. As fade in iteration, FWHM value more and more decreased. Conclusion: When using Onco Flash, shortens a scan time, and enhances image quality. Also, user can adjust the parameters to improve resolution. Therefore, patient and user are satisfied with these merits.

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Infrared Characteristics of Some Flash Light Sources (섬광의 적외선 특성 연구)

  • Lim, Sang-Yeon;Park, Seung-Man
    • Korean Journal of Optics and Photonics
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    • v.27 no.1
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    • pp.18-24
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    • 2016
  • To effectively utilize a flash and predict its effects on an infrared device, it is essential to know the infrared characteristics of the flash source. In this paper, a study of the IR characteristics of flash light sources is carried out. The IR characteristics of three flash sources, of which two are combustive and the other is explosive, are measured with an IR characteristic measurement system over the middle- and long-wavelength infrared ranges. From the measurements, the radiances over the two IR ranges and the radiative temperatures of the flashes are extracted. The IR radiance of flash A is found to be the strongest among the three, followed by those of sources C and B. It is also shown that the IR radiance of flash A is about 10 times stronger than that of flash B, even though these two sources are the same type of flash with the same powder. This means that the IR radiance intensity of a combustive flash source depends only on the amount of powder, not on the characteristics of the powder. From the measured radiance over MWIR and LWIR ranges for each flashes, the radiative temperatures of the flashes are extracted by fitting the measured data to blackbody radiance. The best-fit radiative temperatures (equivalent to black-body temperatures) of the three flash sources A, B, and C are 3300, 1120, and 1640 K respectively. From the radiance measurements and radiative temperatures of the three flash sources, it is shown that a combustive source radiates more IR energy than an explosive one; this mean, in turn, that the effects of a combustive flash on an IR device are more profound than those of an explosive flash source. The measured IR radiances and radiative temperatures of the flash sources in this study can be used to estimate the effects of flashes on various IR devices, and play a critical role for the modeling and simulation of the effects of a flash source on various IR devices.

Cost-based Optimization of Block Recycling Scheme in NAND Flash Memory Based Storage System (NAND 플래시 메모리 저장 장치에서 블록 재활용 기법의 비용 기반 최적화)

  • Lee, Jong-Min;Kim, Sung-Hoon;Ahn, Seong-Jun;Lee, Dong-Hee;Noh, Sam-H.
    • Journal of KIISE:Computing Practices and Letters
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    • v.13 no.7
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    • pp.508-519
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    • 2007
  • Flash memory based storage has been used in various mobile systems and now is to be used in Laptop computers in the name of Solid State Disk. The Flash memory has not only merits in terms of weight, shock resistance, and power consumption but also limitations like erase-before-write property. To overcome these limitations, Flash memory based storage requires special address mapping software called FTL(Flash-memory Translation Layer), which often performs merge operation for block recycling. In order to reduce block recycling cost in NAND Flash memory based storage, we introduce another block recycling scheme which we call migration. As a result, the FTL can select either merge or migration depending on their costs for each block recycling. Experimental results with Postmark benchmark and embedded system workload show that this cost-based selection of migration/merge operation improves the performance of Flash memory based storage. Also, we present a solution of macroscopic optimal migration/merge sequence that minimizes a block recycling cost for each migration/merge combination period. Experimental results show that the performance of Flash memory based storage can be more improved by the macroscopic optimization than the simple cost-based selection.

Pattern Testable NAND-type Flash Memory Built-In Self Test (패턴 테스트 가능한 NAND-형 플래시 메모리 내장 자체 테스트)

  • Hwang, Phil-Joo;Kim, Tae-Hwan;Kim, Jin-Wan;Chang, Hoon
    • Journal of the Institute of Electronics and Information Engineers
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    • v.50 no.6
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    • pp.122-130
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    • 2013
  • The demand and the supply are increasing sharply in accordance with the growth of the Memory Semiconductor Industry. The Flash Memory above all is being utilized substantially in the Industry of smart phone, the tablet PC and the System on Chip (SoC). The Flash Memory is divided into the NOR-type Flash Memory and the NAND-type Flash Memory. A lot of study such as the Built-In Self Test (BIST), the Built-In Self Repair (BISR) and the Built-In Redundancy Analysis (BIRA), etc. has been progressed in the NOR-type fash Memory, the study for the Built-In Self Test of the NAND-type Flash Memory has not been progressed. At present, the pattern test of the NAND-type Flash Memory is being carried out using the outside test equipment of high price. The NAND-type Flash Memory is being depended on the outside equipment as there is no Built-In Self Test since the erasure of block unit, the reading and writing of page unit are possible in the NAND-type Flash Memory. The Built-In Self Test equipped with 2 kinds of finite state machine based structure is proposed, so as to carry out the pattern test without the outside pattern test equipment from the NAND-type Flash Memory which carried out the test dependant on the outside pattern test equipment of high price.

Extended Buffer Management with Flash Memory SSDs (플래시메모리 SSD를 이용한 확장형 버퍼 관리)

  • Sim, Do-Yoon;Park, Jang-Woo;Kim, Sung-Tan;Lee, Sang-Won;Moon, Bong-Ki
    • Journal of KIISE:Databases
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    • v.37 no.6
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    • pp.308-314
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    • 2010
  • As the price of flash memory continues to drop and the technology of flash SSD controller innovates, high performance flash SSDs with affordable prices flourish in the storage market. Nevertheless, it is hard to expect that flash SSDs will replace harddisks completely as database storage. Instead, the approach to use flash SSD as a cache for harddisks would be more practical, and, in fact, several hybrid storage architectures for flash memory and harddisk have been suggested in the literature. In this paper, we propose a new approach to use flash SSD as an extended buffer for main buffer in database systems, which stores the pages replaced out from main buffer and returns the pages which are re-referenced in the upper buffer layer, improving the system performance drastically. In contrast to the existing approaches to use flash SSD as a cache in the lower storage layer, our approach, which uses flash SSD as an extended buffer in the upper host, can provide fast random read speed for the warm pages which are being replaced out from the limited main buffer. In fact, for all the pages which are missing from the main buffer in a real TPC-C trace, the hit ratio in the extended buffer could be more than 60%, and this supports our conjecture that our simple extended buffer approach could be very effective as a cache. In terms of performance/price, our extended buffer architecture outperforms two other alternative approaches with the same cost, 1) large main buffer and 2) more harddisks.

The buffer Management system for reducing write/erase operations in NAND flash memory (NAND 플래시 메모리에서 쓰기/지우기 연산을 줄이기위한 버퍼 관리 시스템)

  • Jung, Bo-Sung;Lee, Jung-Hoon
    • Journal of the Korea Society of Computer and Information
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    • v.16 no.10
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    • pp.1-10
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    • 2011
  • There are the large overhead of block erase and page write operations in NAND flash memory, though it has low power consumption, cheap prices and a large storage. Due to the physical characteristics of NAND flash memory, overwrite operations are not permitted at the same location, so rewriting operation require after erase operation. it cause performance decrease of NAND flash memory. Using SRAM buffer in traditional NAND flash memory, it can not only reduce effective write operation but also guarantee fast memory access time. In this paper, we proposed the small SRAM buffer management system for reducing overhead of NAND flash memory, that is, erase and write operations. The proposed buffer system in a NAND flash memory consists of two parts, i.e., a fully associative temporal buffer with the small fetching block size and a fully associative spatial buffer with the large fetching block size. The temporal buffer have small fetching blocks that referenced from spatial buffer. When it happen write operations or erase operations in NAND flash memory, the related fetching blocks in temporal buffer include a page or a block are written in NAND flash memory at the same time. The writing and erasing counts in NAND flash memory can be reduced. According to the simulation results, although we have high miss ratios, write and erase operations can be reduced approximatively 58% and 83% respectively. Also the average memory access times are improved about 84% compared with the fully associative buffer with two sizes.

Design and Implementation of B-Tree on Flash Memory (플래시 메모리 상에서 B-트리 설계 및 구현)

  • Nam, Jung-Hyun;Park, Dong-Joo
    • Journal of KIISE:Databases
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    • v.34 no.2
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    • pp.109-118
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    • 2007
  • Recently, flash memory is used to store data in mobile computing devices such as PDAs, SmartCards, mobile phones and MP3 players. These devices need index structures like the B-tree to efficiently support some operations like insertion, deletion and search. The BFTL(B-tree Flash Translation Layer) technique was first introduced which is for implementing the B-tree on flash memory. Flash memory has characteristics that a write operation is more costly than a read operation and an overwrite operation is impossible. Therefore, the BFTL method focuses on minimizing the number of write operations resulting from building the B-tree. However, we indicate in this paper that there are many rooms of improving the performance of the I/O cost in building the B-tree using this method and it is not practical since it increases highly the usage of the SRAM memory storage. In this paper, we propose a BOF(the B-tree On Flash memory) approach for implementing the B-tree on flash memory efficiently. The core of this approach is to store index units belonging to the same B-tree node to the same sector on flash memory in case of the replacement of the buffer used to build the B-tree. In this paper, we show that our BOF technique outperforms the BFTL or other techniques.