• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.65-66
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• 2000

Various fluoride films on a glass substrate were prepared and characterized to provide a seed layer for crystalline Si film growth. The XRD analysis on $CaF_2/glass$ illustrated (220) preferential orientation and showed lattice mismatch less than 5 % with Si. We achieved a fluoride film with breakdown electric field of 1.27 MV/cm, leakage current density about $10^{-6}$ $A/cm^2$, and relative dielectric constant less than 5.6. This paper demonstrates microcrystalline silicon $({\mu}c-Si)$ film growth by using a $CaF_2/glass$ substrate. The ${\mu}c-Si$ films exhibited crystallization in (111) and (220) planes, grain size of $700\;{\AA}$, crystalline volume fraction over 65 %, dark- and photo-conductivity ratio of 124, activation energy of 0.49 eV, and dark conductivity less than $4{\times}10^{-7}$ S/cm.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2003.12a
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• pp.192-199
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• 2003

Film growth of InP and GaAs using TMIn, TMGa, TBAs and TBP is numerically predicted and compared to the experimental results. To obtain exact thermal boundary conditions at the reactor walls, the gas flow and heat transfer are analyzed for full three-dimensional reactor including outer tube as well as the inner reactor parts. The results indicate that the exact thermal boundary conditions are important to get precise film growth rate prediction since film deposition is mainly controlled by the temperature dependent diffusion. The results also show that thermal diffusion plays an important role in the upstream region.

• Journal of the Korean Vacuum Society
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• v.4 no.S1
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• pp.113-117
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• 1995

MOCVD of Cu films were carried out on gold-TiN(1000$\AA$)/Ti/Si wafers from hexafluoroacetylacetonate-Cu(l) vinyltrimethylsilane, Cu(l)(hafac)(vtms), in a small cold-wall type reactor. Effects of the substrate and bubbler temperatures on the film growth rate were studied, and a film with $\rho$=1.8$\pm$0.1$\mu$$\Omega$.cm could be deposited 150nm/min at Ts=200 and Tb=$30^{\circ}C$, respectively. The initial stage of the film formation was also investigated by in-situ laser reflectivity monitoring combined with SEM observations, based on which variations in the film properties depending on the growth conditions were discussed in terms of the nucleation rate and grain size.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.251-251
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• 2010

Organic-inorganic hybrid materials have attracted because of its combined properties, such as flexibility and high electrical performance. In addition, the hybrid materials are expected to have synergic effect which are not shown in just one component. Here, we fabricated organic-inorganic hybrid thin film. Organic-inorganic hybrid thin film have been deposited from diethyl zinc and 1, 2, 4-trihydroxybenzene (THB) by molecular layer deposition (MLD). UV-VIS, Using Infrared spectrum and X-ray photoelectron spectroscopy confirm that Zinc and THB hybrid film (ZnTHB) consist of Zn-O and THB - oxide units and the micro structure and composition of hybrid film. hat the sequential surface reactions of diethyl zinc and ethylene glycol are sufficiently self-limiting and saturating to enable well-controlled MLD growth. Transmission electron microscopy image shows lamination growth of ZnTHB film according to cycle.

• Journal of Surface Science and Engineering
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• v.36 no.2
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• pp.141-147
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• 2003

Silicon carbide thin film was deposited in APCVD and LPCVD system with 1,3-DSB precursor 1,3-DSB is the single precursor to deposit SiC on Si at low temperature. SiC film was deposited at $850^{\circ}C$ lower than ordinary temperature ($1000~1200^{\circ}C$) in CVD process. SiC thin film glowed to high oriented (111) plane in APCVD system. In LPCVD system, SiC film groved to preferred (220) plane at same temperature. This discrepancy between preferred planes can be described by the difference of deposition mechanism. Amorphous phase and crystal defect were observed in APCVD system with the main growth mechanism of mass transport limited region. But in LPCVD system, we got the SIC film of uniform, faceted structure and high quality.

• Archives of Pharmacal Research
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• v.19 no.1
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• pp.1-5
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• 1996

Laminated films composed of drug-containing reservoir layer and drug-free membrane were prepared. Zero-order drug release with lag time was achieved by laminating drug-free film onto the reservoir layer, while burst effect was observed on cast-on film. The rate controlling membrane was either attached to or cast directly into the reservoir. The release rate was independent on the reservoir composition but dependent on the composition of rate-controlling membrane. In growth inhibitory test of cephalexin from Eudragit RS film to Streptococcus Mutans, the disk even after release test for 72 hours showed more bacterial growth inhibition than that of control. Permeation of drug through rat skin was proportional to the HPC fraction in the film. We could control the release of cephalexin from the film by changing the fraction of Eudragit RS, HPC and DEP content. Consequently, Eudragit RS/HPC film was found to be very effective system for local delivery of drugs.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.09a
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• pp.85-90
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• 1998

Reactive ion etching (RIE) of Ta-Al alloy thin film and SiO2 thin films was observed during the etching with the CF4 gas and the could be used effectively to etch the Ta-Al alloy thin film. The etching rate of the thin film at a Ta content of 50 mol% was about 67$\AA$/min. No selectivity between the Ta-Al alloy thin film and SiO2 thin films was observed during the etching with the CF4 gas and the etching rate of the SiO2 layer was 12 times faster than that of the Ta-Al alloy thin film. In addition, it was observed that photoresist of AZ5214 was more useful than Shiepley 1400-2 in RIE with the CF4 gas.

• Korean Journal of Materials Research
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• v.14 no.5
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• pp.343-347
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• 2004

We investigated the growth feasibility of polycrystalline Si film on mica substrate for the transfer of the layer to a plastic substrate. The annealing temperature was limited up to $600^{\circ}C$ because of crack development in the mica substrate. Amorphous Si film was deposited on mica substrate by PECVD and was crystallized by furnace annealing. During the annealing, bubbles were formed at the Si/mica interface. The bubble formation was avoided by the Ar-plasma treatment before amorphous Si deposition. A uniform and clean polycrystalline Si film was obtained by coating $NiCl_2$ on the amorphous Si film and annealing at $500^{\circ}C$ for 10 h. The conventional Si lithography was possible on the mica substrate and the devices fabricated on the substrate could be transferred to a plastic substrate.

• Food Science and Biotechnology
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• v.15 no.3
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• pp.469-473
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• 2006

Film-forming yeasts generate an undesirable yeasty flavor in fermented vegetables such as kimchi in the presence of oxygen. Antimicrobial materials including garlic oil (GO), heated garlic (HG), and allyl alcohol (AA) were investigated for use as alternative natural food preservatives to inhibit the growth of film-forming yeasts in fermented vegetables. Using the fermentation of cucumber pickles as a model system, GO, HG, and AA were effective in preventing film formation at concentrations of 0.006, 3.0, and 0.02%, respectively. The effectiveness of HG in preventing the growth of a film yeast, Hansenula anomala, was not influenced by pH, while that of potassium sorbate, a typical anti-yeast food preservative, was highly dependent on pH. All tested materials were effective when added at the beginning of fermentation due to their negligible inhibitory activity toward lactic acid bacteria.

• Journal of the Korean Chemical Society
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• v.60 no.3
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• pp.169-176
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• 2016

In a borate buffer solution, the growth kinetics and the electronic properties of passive film on aluminum were investigated, using the potentiodynamic method, chronoamperometry, and multi-frequency electrochemical impedance spectroscopy. The corrosion of aluminum was heavily influenced by the degree of oxygen concentration because of the increasing reduction current. The oxide film formed during the passivation process of aluminum has showed the electronic properties of n-type semiconductor, which follow from the Mott-Schottky equation. It was found out that the passive film (Al(OH)₃) of Al formed in the low electrode potential changes to Al₂O₃ while the electrode potential increases. The growth kinetics data as measured by chronoamperometry suggests a mechanism in which the growth of the film of Al₂O₃ is determined by field-assisted transport of ions through the film.