• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.129-130
• /
• 2008

Polycrystalline silicon (poly-Si) Schottky barrier thin film transistors (SB-TFT) are fabricated by erbium silicided source/drain for n-type SB-TFT. High quality poly-Si film were obtained by crystallizing the amorphous Si film with excimer laser annealing (ELA) or solid phase crystallization (SPC) method. The fabricated poly-Si SB-TFTs have a large on/off current ratio with a low leakage current. Moreover, the electrical characteristics of poly-Si SB TFTs are significantly improved by the additional forming gas annealing in 2 % $H_2/N_2$, because the interface trap states at the poly-Si grain boundaries and at the gate oxide/poly-Si channel decreased.

• Journal of Electrical Engineering and Technology
• /
• v.9 no.2
• /
• pp.609-614
• /
• 2014

We fabricated amorphous zinc tin oxide (ZTO) transparent thin-film transistors (TTFTs). The effects of Al electrode on the mobility and threshold voltage of the ZTO TTFTs were investigated. It was found that the aluminum (Al)-ZTO contact decreased the mobility and increased the threshold voltage. Traps, originating from $AlO_x$, were assumed to be the cause of degradation. An indium tin oxide film was inserted between Al and ZTO as a buffer layer, forming an ohmic contact, which was revealed to improve the performance of ZTO TTFTs.

• Journal of information and communication convergence engineering
• /
• v.4 no.3
• /
• pp.105-107
• /
• 2006

Amorphous silicon is a kind of optical to electric conversion material with current or voltage type after generating a numerous free electron and hole when it is injected by light. It is very effective technology to make schottky diode by bonding thin film to use optical diode. In this paper, we have fabricated optical diode device by forming chrome silicide film through thermal processing with thin film($100{\AA}$) having optimal amorphous silicon. The optimal condition is that we make a thin film by using PECVD(Plasma Enhanced Chemical Vapor Deposition) to improve reliability and characteristics of optical diode. We have obtained high quality diode by using chrome silicide optical diode from dark current and optical current measurement compared to previous method. It makes a simple process and improves a good reliability.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.6
• /
• pp.462-465
• /
• 2009

Schottky barrier thin film transistors (SB-TFT) on polycrystalline silicon(poly-Si) are fabricated by platinum silicided source/drain for p-type SB-TFT. High quality poly-Si film were obtained by crystallizing the amorphous Si film with excimer laser annealing (ELA) or solid phase crystallization (SPC) method, The fabricated poly-Si SB-TFTs showed low leakage current level and a large on/off current ratio larger than 10), Significant improvement of electrical characteristics were obtained by the additional forming gas annealing in 2% $H_2/N_2$ ambient, which is attributed to the termination of dangling bond at the poly-Si grain boundaries as well as the reduction of interface trap states at gate oxide/poly-Si channel.

• Corrosion Science and Technology
• /
• v.21 no.6
• /
• pp.495-502
• /
• 2022

Anodization is a representative electrochemical surface treatment method that can improve both heat resistance and corrosion resistance by forming an anodization film on the surface of the aluminum. However, these properties can be changed after an additional heat treatment process. In this study, Al 6061 was subjected to an anodization process at 60 V for 1 hour, 5 hours, or 9 hours. An additional heat treatment process was performed at 500 ℃ for 30 minutes. Field emission scanning electron microscopy (FE-SEM) analysis revealed that the thickness of the anodized film was increased in proportion to the anodization time. Both pore size and pore diameter of the anodized film was also increased after anodization. After an additional heat treatment process, there were no significant changes in the thickness, pore size, or pore diameter of the anodized film. Heat resistance was confirmed through thermal analysis and chemical resistance was evaluated with a potentiodynamic polarization test.

• Journal of the Korean Society of Food Culture
• /
• v.7 no.4
• /
• pp.297-301
• /
• 1992

To investigate effects of the surface finishing methods (A : conventional press stone, B : enclosing in polyethylene (PE) bag, C : press-tone wrapped with PE film and D : covered with Chinese cabbage leaves 4cm in thickness on Kimchi) on Kimchi quality, pH-values, redness, film forming yeast growth, hardness and sensory quality of Kimchi during storage (for 60 days, at $10{\pm}5^{\circ}C$) in glass vessel $(11{\times}30cm)$ were investigated. pH of the top layer of A, C and D sample were higher than the optimum pH (4.2) of Kimchi, film forming yeast occurred on the surface of Kimchi, color of top layer Kimchi juice was darkened, and panel score of freshness and firmness was significantly worse (p<0.01) than that of sample B. However, in the case of Kimchi stored in PE bag (B), film forming yeast were can't detected visually in the surface of Kimchi, pH values were low as good quality Kimchi, freshness and firmness panel scores and hardness were significantly better (p<0.01) than A, C and D, and redness of juice of top layer of B was also preserved clearly for 60 days. Accordingly among the four surface finishing methods, the B-method was most effective in preserving of y of Kimchi.

• Asia Marketing Journal
• /
• v.13 no.4
• /
• pp.29-54
• /
• 2012

Recently, as film has been admitted as the artistic merit and higher value-added business, the past studies on film have been lively carried on various fields. Especially, the film business is thought to be value-added business and has explored the causes of influencing spectators. However, there are no researches enough to explain what induces the choice and diffusion of the film. The film is not only hedonic products but also typical example of experiential products. So how to process film formation plays important roles in explaining the procedures of forming preference on the film and the movies spread more widely. But the great part of study of films has been concentrated on exploring hedonic factors of influencing spectator's choice. Until now there is not enough study for the relationship between experiential information processing and film preference. To explain film's preference, our study focuses on preference fluency and processing fluency that can provide an insight for our question about the relationship. In this article, to explain the procedures of processing experiential information and forming preference on the film, our study focuses on finding the relationship between film's processing fluency and film's preference fluency and explores the factors that affect film's processing fluency. To achieve the goal of this study, we distinguish factors of film's conceptual fluency from factors of film's perceptual fluency and explore the paths from the factors to film's preference fluency. The factors which have effects on perceptual fluency are hypothesized to be distinction of image expression, distinction of sound expression, correspondence between actors' image and their role. The factors which have effect on conceptual fluency are supposed to be well-organized story, suitability of lines expression. The experiments in which students were sampled at 'C' university were conducted in 2010 (december). Data collection was proceeded through questionnaires. We test the hypothesized model by using structural equation modeling(Amos 17.0). The fit indices for the model are as follows : x²=416.266(df=213, p=0.00), GFI=0.855, AGFI=0.812, RMSEA =0.069, IFI=O.925, CFI=0.920, TLI=0.905. According to the guidelines, there is evidence that our measurement model fits data. The results of empirical study are as follows. The path from film's perceptual fluency to film's preference fluency is supported(estimate: 0.223, C.R: 2.641). The path from film's conceptual fluency to film's preference fluency is supported(estimate: 0.397, C.R: 4.863). The path from distinction of image expression to film's perceptual fluency is not supported(estimate: 0.113, C.R: 1.665). The path from distinction of sound expression to film's perceptual fluency is supported (estimate: 0.190, C.R: 2.042). The path from correspondence between actors' image and their role to film's perceptual fluency is supported(estimate: 0.686, C.R: 5.566). The path from well-organized story to film's conceptual fluency is supported(estimate: 0.396, C.R: 4.023). The path from suitability of lines expression to film's conceptual fluency is supported(estimate: 0.536, C.R: 5.441). Concludingly, our study explored the influencing factors of film's processing fluency inducing film's Preference fluency. First, film's perceptual fluency and film's conceptual fluency have positive effects on film's preference fluency. Second, distinction of image expression is not significant on film's perceptual fluency, but distinction of sound expression and image's correspondence of actors' image and their role have positive effects on film's perceptual fluency. Lastly, well-organized story and suitability of lines expression have positive effects on film's conceptual fluency.

• Journal of Surface Science and Engineering
• /
• v.24 no.4
• /
• pp.179-186
• /
• 1991

The effects of silicone contents and flow rates(agitation rates) of electrolyte on the formation and mechanical properties of hard anodized film of Al-Si alloy have been studied in 12% H2SO4 + 1% Oxalic acid with varying the silicone contents in the rance of 0 to 11.6% and the flow rates of electrolyte in the range of 0 to 90cm/sec. The film forming voltage required to maintain an equivalent current density significantly increase with the silicone content of Al-Si alloys due to a low conductivity of silicone. Hardness and wear resistance of the anodized film of Al-Si alloys decreases wit increasing the silicone content. The increase in the flow rate of electrolyte has a similar influence on the formation and mechanical properties of anodized film as does the decrease in bath temperature. Hardness of anodized film is rapidly increased with the flow rate being increased from 10cm/sec. It is observed that the increase in the flow rate from 11cm/sec. It is observed that the increase in the flow from 11cm/sec to 48cm/sec is more effective in enhancing the hardness of film than is the decrease in bath temperature from 1$0^{\circ}C$ to $0^{\circ}C$.

• Journal of information and communication convergence engineering
• /
• v.3 no.4
• /
• pp.179-183
• /
• 2005

A photodiode capable of obtaining a sufficient photo/ dark current ratio at both forward bias state and reverse bias state is proposed. The photodiode includes a glass substrate, an aluminum film formed as a lower electrode over the glass substrate, an alumina film formed as an insulator barrier over the aluminum film, a hydrogenated amorphous silicon film formed as a photo conduction layer over a portion of the alumina film, and a transparent conduction film formed as an upper electrode over the hydro-generated amorphous silicon film. A good quality alumina $(Al_2O_3)$ film is formed by oxidation of aluminum film using electrolyte solution of succinic acid. Alumina is used as a potential barrier between amorphous silicon and aluminum. It controls dark-current restriction. In case of photodiodes made by changing the formation condition of alumina, we can obtain a stable dark current $(\~10^{-12}A)$ in alumina thickness below $1000{\AA}$. At the reverse bias state of the negative voltage in ITO (Indium Tin Oxide), the photo current has substantially constant value of $5{\times}10^{-9}$ A at light scan of 100 1x. On the other hand, the photo/dark current ratios become higher at smaller thicknesses of the alumina film. Therefore, the alumina film is used as a thin insulator barrier, which is distinct from the conventional concept of forming the insulator barrier layer near the transparent conduction film. Also, the structure with the insulator thin barrier layer formed near the lower electrode, opposed to the ITO film, solves the interface problem of the ITO film because it provides an improved photo current/dark current ratio.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.06a
• /
• pp.3-4
• /
• 2006

In this paper, a nickel silicide technology with post-silicidation annealing effect for thin film SOI devices is investigated in detail. Although lower resistivity Ni silicide can be easily obtained at low forming temperature, poor thermal stability and changing of characteristic are serious problems during the post silicidation annealing like ILD (Inter Layer Dielectric) deposition or metallization. So these effects are observed as deposited Ni thickness differently on As doped SOI (Si film 30nm). Especially, the sheet resistance of Ni thickness deposited 20nm was lower than 30nm before the post silicidation annealing. But after the post silicidation annealing, the sheet resistance was changed. Therefore, in thin film SOI MOSFETs or Ni-FUSI technology that the Si film is less than 50nm, it is important to decide the thickness of deposited Ni in order to avoid forming high resistivity silicide.