• Journal of Environmental Science International
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• v.18 no.7
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• pp.797-802
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• 2009

To control degradation rate of biodegradable poly(lactide)s (PLA), the stereochemical PLAs with different ratios of d-lactide and l-lactide units were synthesized by the ring open polymerization and the their degradation kinetics were measured by a Langmuir film balance. The alkaline (pH=11) degradation of poly(l-lactide) (l-PLA) monolayer showed the faster rate at a surface pressure of 4 mN/m in the ranges from to 0 to 7 mN/m. However, the enzymatic degradation of l-PLA with Proteinase K did not occur until 4 mN/m. Above a constant surface pressure of 4 mN/m, the degradation rate was increased with a constant surface pressure. These behaviors might be attributed to the difference in the contacted area with degradation medium: alkaline ions need small contact area with l-PLA while enzymes require much bigger one to be activated due to different medium sizes. The stereochmical PLA monolayers showed that the alkaline degradation was increased with their optical impurities while the enzymatic one was inversed. These results could be explained by the decrease of crystallinity with the optical impurity and the inactivity of enzyme to d-LA unit.

• Textile Coloration and Finishing
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• v.2 no.4
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• pp.223-230
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• 1990

This study was carried out with the view of fundamental investigating to improve the tactile and the hygroscopicity of Poly (ethylene terephthalate) (PET) fibers. Mono-sodium ethylene glycolate in ethylene glycol (MSEG-EG) solution was prepared and PET films were treated with it. The following conclusions were obtained. 1. The tensile strength decreased with increasing decomposition ratio while density, crystallinity and crystallite size increased with increasing decomposition ratio when PET films were treated with MSEG-EG solution. 2. Number of carboxyl end groups was increased until 10-20% decomposition ratio when PET films were treated with MSEG-EG solution. However, the decomposition ratio became more than 20%, the number of carboxyl end groups had tendency to decreased. 3. The surface tension of PET films increased for treating with MSEC-EG solution. Hydrogen bonding force and poler force among the components of surface tension increased while dispersion force among those decreased. 4. The moisture region of PET films increased with increasing decomposition ratio when PET films were treated with MSEG-EG solution.

• Journal of the Korean Vacuum Society
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• v.16 no.3
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• pp.215-220
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• 2007

Thin films of $SBT(SrBi_2Ta_2O_9)$ having $Pt/SBT/Seed/Pt/Ti/SiO_2/Si$ structure were fabricated using self-seed layer method by R.F. Magnetron sputter. Self-seed layers were deposited at room temperature and $600^{\circ}C$, which had 30 nm thickness. To investigate crystallization of self-seed layer we characterized by XRD after various heat treatment. And we characterized the crystallinity and electrical properties of SBT on self-seed layer after various heat treatment.

• Textile Coloration and Finishing
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• v.8 no.6
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• pp.1-8
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• 1996

The crystal structures of Nylon 6 films with the changes of pressure, temperature, and the processing time were examined. The accompanying physical property changes such as the weight fraction, the crystallinity, the crystal size, the initial modulus, and the thermal properties, gives the following results. When the sample is processed at 16$0^{\circ}C$, the weight fraction is not changed significantly with varying pressure. However, at 18$0^{\circ}C$ a significant change of the weight fraction was found with increasing pressure above 5 ton/in$^{2}$ so as to increase the crysallinity. As long as the ct transition is concerned we found that it begins from 14$0^{\circ}C$ and is completed at 18$0^{\circ}C$ and 9 ton/$in^{2}$ of pressure with the processing time of 120 min. The increase of the initial modulus is believed to be due to the increase of the number of the tie chains and the tension resulting from the change of the crystal size in the direction perpendicular to the direction of the applied pressure. The meltiong point change is due to the pressurized crystallization was not observed.

• Journal of the Korean Ceramic Society
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• v.29 no.5
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• pp.383-390
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• 1992

We investigated the effect of substrate on the properties of the Ni-Zn-Cu ferrite thin films deposited on SiO2 (1000∼3000${\AA}$) / Si (100) substrate at various conditions by rf magnetron sputtering. A disktype Ni-Zn-Cu ferrite sintered by conventional ceramic process and argon gas were used as a target and a sputtering gas, repectively. The compositions of the thin films measured by EPMA were similar to target composition (Fe: 65.8 at%, Ni: 12.7 at%, Cu: 6.7 at%, Zn: 14.8 at%) irrespective of substrate temperature. Amorphous thin films were deposited when substrate was not intentionally heated, but the films came to crystallize with increasing substrate temperature, and crystalline thin films were deposited at substrate temperature above 200$^{\circ}C$. Below 250$^{\circ}C$ saturation magnetization (Ms), remanence (Mr) and coercivity (Hc) of the ferrite thin film increased with the substrate temperature due to the increase of grain size and the improvement of crystallinity. And above 250$^{\circ}C$, Ms, Mr increased slightly, but Hc of the amorphous thin films increased due to crystallization, whereas that of the crystalline thin films decreased because of grain growth and stress release.

• Journal of Integrative Natural Science
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• v.13 no.3
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• pp.87-91
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• 2020

Molybdenum carbide (MoC_x) thin films (TFs) were deposited by reactive radio frequency (rf) magnetron co-sputtering in high vacuum chamber. We compared the properties of MoC_x thin films as the rf power changed on C target. The result of alpha step measurement showed that the thickness of the MoC_x TFs varied from163.3 to 194.86 nm as C power was increased from 160 to 200 W. The crystallinity of MoC_x such as b-Mo₂C, Mo₂C, and diamond like carbon (DLC) structures were observed by XRD. The oxidation states of Mo and C were determined using high resolution XPS spectra of Mo 3d and C 1s were deconvoluted. Molybdenum was consisted of Mo, Mo⁴⁺, and Mo⁶⁺ species. And C was deconvoluted to C-Mo, C, C-O, and C=O species.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.330-333
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• 2002

The substrate temperature is an important parameter in thin film deposition process. In this paper the effects of the substrate temperature on the properties of CuIn0.75Ga0.25Se2(CIGS) thin films are reported. Structure, surface morphology and optical properties of CIGS thin films deposited at various substrate temperatures have been investigated using a number of analysis techniques. X-ray diffraction (XRD) analysis shows that CIGS films exhibit a strong <112> preferred orientation. As expected, at higher substrate temperatures the films displayed a higher degree of crystallinity. The <112> peak was also enhanced and other CIGS peaks appeared simultaneously These results were supported by experimental work using Raman spectroscopy. The Raman spectra of the as-grown CIGS thin films show only the Al mode peak. The intensity of this peak was enhanced at higher deposition temperatures. Scanning electron microscopy (SEM) results revealed very small grains in films fabricated at 48$0^{\circ}C$ substrate temperature. When the substrate temperature was increased the average grain size also increased together with a reduction in the number and size of the voids. The deposition temperature also had a significant influence on the transmission spectra.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.383-386
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• 2002

Polycrystalline Cu(In,Ga)Se$_2$(CIGS) thin-films were grown by co-evaporation on a soda lime glass substrate. In this paper the effects of the Se evaporation temperature on the properties of CuIn0.75Ga0.25Se2 (CIGS) thin films. Structure, surface morphology and optical properties of CIGS thin films deposited at various Se evaporation temperatures have been investigated using a number of analysis techniques. X-ray diffraction (XRD) analysis shows that CIGS films exhibit a strong <112> preferred orientation. As expected, at higher Se evaporation temperatures the films displayed a lower degree of crystallinity. The <112> peak was also enhanced and other CIGS peaks appeared simultaneously. These results were supported by experimental work using scanning electron microscopy When the Se evaporation temperature was increased, the average grain size also decreased together with a reduction Cu content. The Se evaporation temperature also had a significant inf1uence on the transmission spectra. Increasing the Se evaporation temperature, the cell efficiency was improved dramatically to 11.75% with Voc = 556 mV, Jsc = 32.17 mA/cm2 and FF = 0.66. The Se evaporation temperature is an important parameter in thin film deposition regardless of the deposition technique being used to deposit thin films

• Journal of the Korean Ceramic Society
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• v.46 no.6
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• pp.708-712
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• 2009

ITO films were achieved by sintering at $500{\sim}550{^{\circ}C}$. This was possible by inducing a seeding effect on an ITO sol by producing crystalline ITO nanoparticles in situ during heat treatment. Two kinds of ITO sols (named ITO-A and ITO-B) were prepared at 2.0 wt% from indium acetate and tin(IV) chloride in different mixed solvents. The ITO-A sol showed a high degree of crystallinity of ITO without any detectable Sn$O_2$ on XRD at $350{^{\circ}C}$/1 h, but the ITO-B sol showed a small amount of Sn$O_2$ even after annealing at $600{^{\circ}C}$/1 h. The 10 wt% ITO-A//ITO-B showed the sheet resistance of 3600$\Omega$/□, while the ITO-B sol alone showed 5200 $\Omega$/□ by sintering at $550{^{\circ}C}$ for 30 min. Processing parameters were studied by TG/DSC, XRD, SEM, sheet resistance, and visible transmittance.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.480.1-480.1
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• 2014

In this study, we suggest the new emitter formation applied solid phase epitaxy (SPE) growth process using rapid thermal process (RTP). Preferentially, we describe the SPE growth of intrinsic a-Si thin film through RTP heat treatment by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD). Phase transition of intrinsic a-Si thin films were taken place under $600^{\circ}C$ for 5 min annealing condition measured by spectroscopic ellipsometer (SE) applied to effective medium approximation (EMA). We confirmed the SPE growth using high resolution transmission electron microscope (HR-TEM) analysis. Similarly, phase transition of P doped a-Si thin films were arisen $700^{\circ}C$ for 1 min, however, crystallinity is lower than intrinsic a-Si thin films. It is referable to the interference of the dopant. Based on this, we fabricated 16.7% solar cell to apply emitter layer formed SPE growth of P doped a-Si thin films using RTP. We considered that is a relative short process time compare to make the phosphorus emitter such as diffusion using furnace. Also, it is causing process simplification that can be omitted phosphorus silicate glass (PSG) removal and edge isolation process.