• The Journal of the Korea institute of electronic communication sciences
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• v.19 no.1
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• pp.39-46
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• 2024

In this study, GTZO(Ga-Ti-Zn-O) thin films were deposited at various working pressures (1~7mTorr) by RF magnetron sputtering to examine the structural, electrical, and optical properties. All GTZO thin films exhibited c-axis preferential growth regardless of working pressure, the GTZO thin film deposited at 1mTorr showed the most excellent crystallinity having 0.38˚ of FWHM. The average transmittance in the visible light region (400~800nm) showed 80% or more regardless of the working pressure. We could observed the Burstein-Moss effect that carrier concentration decrease with the increase of working pressure and thus the energy band gap is narrowed. Figure of merits of GTZO thin film deposited at 1mTorr showed the highest value of 9.08 × 103 Ω-1·cm-1, in this case resistivity and average transmittance in the visible light region were 5.12 × 10-4 Ω·cm and 80.64%, respectively.

• Korean Journal of Materials Research
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• v.11 no.7
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• pp.575-579
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• 2001

GaN buffer layer and epilayer have been grown on sapphire (0001) by metal organic chemical vapor deposition (MOCVD). GaN buffer layer ranging from 26 nm to 130 nm in thickness was grown at 55$0^{\circ}C$ prior to the 4 $\mu\textrm{m}$ thick GaN epitaxial deposition at 110$0^{\circ}C$. After GaN buffer layer growth, buffer layer surface was examined by atomic force microscopy (AFM). As the thickness of GaN buffer layer was increased, surface morphology of GaN epilayer was investigated by scanning electron microscopy (SEM). Double crystal X-ray diffraction (DCXRD) and Raman spectroscopy were employed to study crystallinity of GaN epilayers. Optical properties of GaN epilayers were measured by photoluminescence (PL). The epilayer grown with a thin buffer layer had rough surface, and the epilayer grown with a thick buffer layer had mirror-like surface of epilayer. Although the stress on the latter was larger than on the former, its crystallinity was much better. These results imply that the internal free energy is decreased in case of the thick buffer layer. Decrease in internal free energy promotes the lateral growth of the GaN film, which results in the smoother surface and better crystallinity.

• Korean Chemical Engineering Research
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• v.49 no.6
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• pp.758-763
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• 2011

In this work, polymer composite electrolytes were prepared by a blend of poly(methyl methacrylate) (PMMA) and poly(ethylene oxide) (PEO) as a polymer matrix, propylene carbonate as a plasticizer, $LiClO_4$ as a salt, and by containing a different content of $TiO_2$, by using the solution casting method. The crystallinity and ionic conductivity of the polymer electrolytes was evaluated using X-ray diffraction(XRD) and AC impedance method, respectively. The morphology of composite electrolyte film was analyzed by SEM method. From the experimental results, by increasing the $TiO_2$ content, crystallinity of PEO was reduced, and ionic conductivity was increased. In particular, the ionic conductivity was dependent on the content of $TiO_2$ and showed the highest value 15 wt%. However, when $TiO_2$ content exceeds 15 wt%, the ionic conductivity was decreased. According to the surface morphology, the ionic conductivity was decreased because the polymer composite electrolytes showed a heterogenous morphology of fillers due to immiscibility or aggregation of the filler within the polymer matrix.

• Applied Chemistry for Engineering
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• v.10 no.5
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• pp.644-651
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• 1999

In this experiment the Iron phthalocyanine (FePc) films on Si-wafer and alumina pallet were prepared using vacuum sublimation with conditions of changing reaction time, temperature, and deposition rate. Then, some samples were annealed following annealing. Techniques such as XRD, SEM, and resistance measurement method, were dedicated to characterize the changes of surface structure, phase transformation and electric resistance sensitivity in accordance with change of film thickness. In proportion to the decrease of deposition temperature from $370^{\circ}C$ to $350^{\circ}C$, intensities of (200), (011), (211) and (114) planes of $\alpha$-phase were decreased and (100) plane of $\beta$-phase were appeared. The film thickness were controlled by regulating the volume of precursor material during rapid deposition. As a result, it was observed that crystalline particle size had been increased according to the increase of film thickness and $\alpha$-phase transformed to $\beta$-phase. In consequence of measuring the crystallinity of films annealed between $150^{\circ}C$ and $350^{\circ}C$, $\alpha$- to $\beta$-phase transformation was appeared to begin at $150^{\circ}C$ and completely transformed to $\beta$-phase at $350^{\circ}C$. Electric resistance sensitivity of FePc film to $NO_x$ gas along temperature change of FePc films was observed to be more stable with the decrease of the film thickness.

• Journal of the Korean Ceramic Society
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• v.39 no.10
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• pp.928-934
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• 2002

Gallium doped Zinc Oxide(GZO) films were deposited by dc magnetron sputtering using a GZO ceramic target at various conditions such as substrate temperature (RT, 400), residual water pressure ($P_{H_2O}$; 1.61${\times}10^{-4}∼2.2{\times}10^{-3}$ Pa), introduction of $H_2$ gas (8.5%) and different magnetic field strengths(250, 1000G). GZO films deposited without substrate heating showed clear degradation in film crystallinity and electrical properties with increasing $P_{H_2O}$. The resistivity increased from 3.0${\times}10^{-3}$ to 3.1${\times}10^{-2}{\Omega}㎝$ and the grain size of the films decreased from 24 to 3 nm when PH2O was increased from 1.61${\times}10^{-4}$ to 2.2${\times}10^{-3}$ Pa. However, degradation in electrical properties with increasing $P_{H_2O}$ was not observed for the films deposited with introduction of 8.5% $H_2$. When magnetic field strength of the cathode increased from 250G to 1000G, crystallinity and electrical properties of GZO films improved remarkably about all the $P_{H_2O}$. This result could be attributed to the decrease in film damage caused by the decrease in plasma impedance.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.6
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• pp.252-255
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• 2014

Indium tin oxide (ITO) films with various oxygen partial pressure from 0 to $6{\times}10^{-5}$ Pa were prepared onto polyethylene terephthalate (PET) using RF magnetron sputtering at room temperature. The structural, electrical and optical properties of the grown ITO films were investigated as a function of the oxygen partial pressure. The amorphous nature of the ITO films was dominant at the partial pressure below $1{\times}10^{-5}$ Pa and the degree of crystallinity increased as the oxygen concentration increased further. This structural change comes with the increased carrier concentration and reduction of the electrical resistivity down to $9.8{\times}10^{-4}{\Omega}{\cdot}cm$. The average transmittance (at 400~800 nm) of the ITO deposited on the PET substrates increased as the oxygen partial pressure increased and transmittance above 80 % was achieved with the partial pressure of $4{\times}10^{-5}$ Pa. The results show that the choice of optimal oxygen partial pressure can present improved film crystallinity, the increased carrier concentration, and the enhancement in the electrical conductivity.

• Journal of the Korean Vacuum Society
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• v.6 no.3
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• pp.235-241
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• 1997

The crystallinity and the structure of heteroepitaxially grown $Y_2O_3$ films on the silicon substrates deposited by Ultra High Vacuum Ionized Cluster Beam(UHV-ICB) were investigated by Back-scattering Spectroscopy(BS)/channeling. The channeling minimum values, $X_{min}$, of the $Y_2O_3$ films deposited by other methods were 0.8~0.95 up to the present, which indicates amorphous or highly polycrystalline nature of the $Y_2O_3$ films. On the contrary, the channeling minimum value of heteroepitaxially grown $Y_2O_3$ films on Si(100) and Si(111) deposited by UHV-ICB are 0.28 and 0.25 respectively. These results point out fairly good crystalline quality. It is also observed that the top region of $Y_2O_3$ films have less crystalline defects than the bottom region regardless of the crystal direction of the Si substrates. The axis of $Y_2O_3$<111> epitaxially grown on Si(111) is tilt by $0.1^{\circ}$ with respect to Si<111>. That of $Y_2O_3$<110> on Si(100) is parallel to the Si<001>. The $Y_2O_3$ film on Si(100) grew with single domain structure and that on Si(111) grew with double domain structure. From the result of oxygen resonance BS/channeling, the oxygen atoms in heteroepitaxially grown $Y_2O_3$ film on Si(111) substrate have the crystallinity, but that on Si(100) shows almost channeling amorphous state.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.5
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• pp.240-246
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• 2002

$TiO_2$ films on soda-lime-silica glasses were prepared by spin coating-pyrolysis process using titanium naphthenate as a starting material. As-deposited films were pyrolyzed at $500^{\circ}C$ for 10 min in air and annealed at 500, 550 and $600^{\circ}C$ for 30 min in air. Crystallinity of the film was investigated by X-ray diffraction analysis. A field emission-scanning electron microscope and an atomic force microscope were used for characterizing the surface morphology and the surface roughness of the film. After annealing at 550 and $600^{\circ}C$, the X-ray diffraction patterns consist of only anatase peak. Films annealed at 500 and $550^{\circ}C$ exhibited flat surfaces. While with the increase in annealing temperature to $600^{\circ}C$, the $TiO_2$ film showed abnormal growth of three-dimensional needle-shaped grains. For all samples, high transmittance, above 90 % at 500 nm, was obtained at visible range. To investigate photocatalytic properties, IR absorbance associated with the C-H stretching vibrations of a thin solution-cast film of stearic acid under 365 nm (2.4 mW/$\textrm{cm}^2$) UV irradiation was estimated.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.5
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• pp.986-991
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• 2016

In this study, we prepared ITO thin films on $Nb_2O_5/SiO_2$ double buffer layer using DC magnetron sputtering method and investigated electrical and optical properties with various substrate temperatures (room temperature ~ $400^{\circ}C$). The resistivity showed a decreasing tendency, because crystallinity has been improved due to the enlarged grain size with increasing substrate temperature. ITO thin film deposited at $400^{\circ}C$ showed the most excellent value of resistivity and sheet resistance as $3.03{\times}10^{-4}{\Omega}{\cdot}cm$, $86.6{\Omega}/sq.$, respectively. In results of optical properties, average transmittance was increased but chromaticity ($b^*$) was decreased in visible light region (400~800nm) with increasing substrate temperature. Average transmittance and chromaticity ($b^*$) of ITO thin film deposited at $400^{\circ}C$ exhibited significantly improved results as 85.8% and 2.13 compared to 82.8% and 4.56 of the ITO thin film without buffer layer. Finally, we found that ITO thin film introduced $Nb_2O_5/SiO_2$ double buffer layer has a remarkably improved optical property such as transmittance and chromaticity due to the index matching effect.

• Journal of the Korean Electrochemical Society
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• v.11 no.4
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• pp.284-288
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• 2008

Sn-thin film as high capacitive anode for thin film lithium-ion battery was prepared by organic-electrolyte electroplating using Sn(II) acetate. Electrolytic solution including $Li^+$ and $Sn^{2+}$ had 3 reduction peaks at cyclic voltammogram. Current peak at $2.0{\sim}2.5\;V$ region correspond to the electroplating of Sn on Ni substrate. This potential value is lower than 2.91 V vs. $Li^+/Li^{\circ}$, of the standard reduction potential of $Sn^{2+}$ under aqueous media. It is the result of high overpotential caused by high resistive organic electrolytic solution and low $Sn^{2+}$ concentration. Physical and electrochemical properties were evaluated using by XRD, FE-SEM, cyclic voltammogram and galvanostatic charge-discharge test. Crystallinity of electroplated Sn-anode on a Ni substrate could be increased through heat treatment at $150^{\circ}C$ for 2 h. Cyclic voltammogram shows reversible electrochemical reaction of reduction(alloying) and oxidation(de-alloying) at 0.25 V and 0.75 V, respectively. Thickness of Sn-thin film, which was calculated based on electrochemical capacity, was $7.35{\mu}m$. And reversible capacity of this cell was $400{\mu}Ah/cm^2$.