• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.12 no.11
• /
• pp.4711-4717
• /
• 2011

Formation of TiN films by PVD method and the DC and RF sputtering deposition method can be applied, the injected gas to generate plasma ionization rate of the film forming speed is slow away, anything to increase the adhesion between films limitations have. To improve this, to investigate the deposition and ion beam evaporation simultaneously IBAD(Ion beam assisted deposition) when used, Ion beam surface coating material prior to the survey because the surface cleaning effect of a large, high film adhesion can be obtained. In addition, the high vacuum and low temperature, high purity thin film of uniform thickness in the benefits is.

• Proceedings of the KIEE Conference
• /
• 2004.07c
• /
• pp.1820-1822
• /
• 2004

In this study, major research fields are classified as ozone generation system for dry cleaning wafer of etched silicon wafer, dry cleaning process of etched silicon wafer which includes SEM analysis and ESCA analysis. The following results are deduced from each experiment and analysis. The magnitudes of carbon and silicon were similar to the survey spectrum of silicon wafer which does not cleaning, but magnitude of oxygen was much bigger Because UV light activates oxygen molecules in the oxide film on the silicon wafer.

• Korean Journal of Materials Research
• /
• v.27 no.11
• /
• pp.577-582
• /
• 2017

Self-cleaning and photocatalytic $TiO_2$ thin films were prepared by a facile sol-gel method followed by spin coating using peroxo titanic acid as a precursor. The as-prepared thin films were heated at low temperature($110^{\circ}C$) and high temperature ($400^{\circ}C$). Thin films were characterized by X-ray diffraction(XRD), Field-emission scanning electron microscopy(FESEM), UV-Visible spectroscopy and water contact angle measurement. XRD analysis confirms the low crystallinity of thin films prepared at low temperature, while crystalline anatase phase was found the for high temperature thin film. The photocatalytic activity of thin films was studied by the photocatalytic degradation of methylene blue dye solution. Self-cleaning and photocatalytic performance of both low and high temperature thin films were compared.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.11a
• /
• pp.147-150
• /
• 2002

In this study, we evaluated the dilute HF Cleaning to reduce residual defects made by W CMP process. But, One point we should focus is It should not effect to metal thin film reliability. The purpose of this test is to verify barrier metal damage during HF cleaning and based on this result we get rid of slurry residue defect which is main defect of W CMP process for the better yield.

• Journal of the Semiconductor & Display Technology
• /
• v.15 no.4
• /
• pp.73-78
• /
• 2016

Contact pressure distribution between PVA brush and semiconductor wafer was measured by developing a test setup which could simulates the post CMP cleaning process. The test set-up used thin film type pressure sensor which could measure the pressure distribution of contact area with the resolution of $15.5ea/cm^2$. As the experimental results, it was verified that there had been severe contact pressure non-uniformity along the axis of the brush and between the adjacent projections on the brush's surface. These results should be considered when developing post CMP cleaning stage or designing the PVA brush.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.88-89
• /
• 2009

In this paper, we investigated about wet cleaning effect as deep trench formation methods for Power chip devices. Deep trench structure was classified by two methods, PSU (Poly Stick Up) and Non-PSU structure. In this paper, we could remove residue defect during wet. cleaning after deep trench etch process for non-PSU structure device as to change wet cleaning process condition. V-SEM result showed void image at the trench bottom site due to residue defect and residue component was oxide by EDS analysis. In order to find the reason of happening residue defect, we experimented about various process conditions. So, defect source was that oxide film was re-deposited at trench bottom by changed to hydrophobic property at substrate during hard mask removal process. Therefore, in order to removal residue defect, we added in-situ SCI during hard mask removal process, and defect was removed perfectly. And WLR (Wafer Level Reliability) test result was no difference between normal and optimized process condition.

• Journal of the Korean Ceramic Society
• /
• v.45 no.6
• /
• pp.345-349
• /
• 2008

$TiO_2$ coating ceramic tile for self-cleaning purpose was prepared by the precipitant dropping method using $TiCl_4$ as a precursor. $TiO_2$ film was formed on the ceramic tile by spray-coating technique and heat-treated at $500^{\circ}C$ for 1 h. The size and crystalline structure of $TiO_2$ particles were 15.3 nm and anatase phase. The outdoor exposure tests were conducted and the effects of outdoor exposure test conditions, such as exhaust concentration of contamination materials (test places), the UV light intensity (irradiation direction) and coating amounts of $TiO_2$ on the self-cleaning properties were investigated by the brightness measurements. As a results, self-cleaning property of $TiO_2$ coating tile was affected by the coating amount of $TiO_2$ however, not affected by the UV light intensity included in sun's ray (irradiation direction). $TiO_2$ coating ceramic tile can be utilized for exterior finishing materials because of self-cleaning property of $TiO_2$ coating tile.

• Proceedings of the Korean Professional Engineer Association Conference
• /
• 1984.03a
• /
• pp.52-60
• /
• 1984

As far as we handle industrial products, the painting process is prerequisite; and the preparatory treatment of materials is, therefore, indispensable to the above process. However, it is a matter for regret that people are liable to overlook the importance the treatment of materials at the preparatory stage, giving themselves up to the surface of finished goods. The preparatory treatment of materials is like backstage personnel (operations) in dramatic performance; the performance cannot be successful without the support of backstage operations in surface treatment. The various methods which are being applied widely as preparatory treatment are as follow: (1) the method by using hand tools such as grinders, etc. (2) the method with blasting (3) the method with chemical coating (4) the method by getting rid of fatty substance with organic solvent The methods No. 1 and No. 2 are in use mainly for larger structures, and those No. 3 and No. 4, either singly or combined, are applied for mass-produced, smaller items (acid cleaning is applied for getting rid of rust, as the case may be). The method No. 3 is used mainly as anti-rust by forming zinc phosphate film on the surface of steel plate or enhancing the bonding power of paints by taking advantage of irregular surfaces of films. Recently are no the market steel plates treated directly with film-coating by omitting the process No. 3. Furthermore, those goods painted include not only nonferrous goods but plastics and elastomer. The present discourse describes the cleaning process by using the steam of organic acid, picked up from among No. 4, and its equipment applied.

• Journal of the Korean Graphic Arts Communication Society
• /
• v.15 no.1
• /
• pp.85-96
• /
• 1997

The color difference between original and printed copy is affected mainly by ink trapping and optical properties of overprinted ink layer. Since the general expression itself about ink trapping is affected also by the optical properties, the analysis of color difference using the ink trapping only cannot be certain. This study will show a new approaching method for optical analysis of spectral reflectance and the effect of printing sequence on color difference in multi-color overprints under the condition of excluding completely the ink trapping problems by means of using transparent film as a substrate.

• 제어로봇시스템학회:학술대회논문집
• /
• 2001.10a
• /
• pp.97.4-97
• /
• 2001

Recently, TFT LCD (thin film transistor liquid crystal display) manufacturing industry is more concerned with the ways of cleaning large TFT LCD´s with high pixed density than ever Ultrasonic cleaners with high frequencies like 1MHz (megasonic cleaners) are effective in removing very small particles without causing mechanical damage to the surface. In this study a megasonic cleaner for TFT LCD manufacturing process is developed and the performance is evaluated through experiments. The experimental results show that the developed magasonic cleaners is effective in removing very small particle from the LCD panel.