• 제목/요약/키워드: filling factor

검색결과 220건 처리시간 0.025초

Negative-refraction Effect for Both TE and TM Polarizations in Two-dimensional Annular Photonic Crystals

  • Wu, Hong;Li, Feng
    • Current Optics and Photonics
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    • 제2권1호
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    • pp.47-52
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    • 2018
  • We systematically investigated the negative-refraction effect for both TE and TM polarizations in annular photonic crystals. Since two polarization waves are excited in different bands, they result in different refractive angles, and so polarization beam splitters can be made of annular photonic crystals. It was found that, in comparison to normal square-lattice air-hole photonic crystals, annular photonic crystals have a much wider common frequency band between TE-1 and TM-2, which is quite beneficial to finding the overlap between the negative-refraction regions belonging to TE-1 and TM-2 respectively. Further analyses of equifrequency surfaces and the electric-field distribution of annular photonic crystals with different parameters have not only demonstrated how the filling factor of annular cells affects the formation of the common negative-refraction region between TE-1 and TM-2, but also revealed some ways to improve the performance of a polarization beam splitter based on the negative-refraction effect in an annular photonic crystal.

Theoretical Consideration on Influences of Cavity or Pillar Shape on Band Structures of Silicon-Based Photonic Crystals

  • Ogawa, Yoshifumi;Tamura, Issei;Omura, Yasuhisa;Iida, Yukio
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제7권1호
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    • pp.56-65
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    • 2007
  • This paper describes physical meanings of various influences of cavity (or pillar) shape and filling factor of dielectric material on band structures in two-dimensional photonic crystals. Influences of circular and rectangular cross-sections of cavity (or pillar) arrays on photonic band structures are considered theoretically, and significant aspects of square and triangular lattices are compared. It is shown that both averaged dielectric constant of the photonic crystal and distribution profile of photon energy play important roles in designing optical properties. For the triangular lattice, especially, it is shown that cavity array with a rectangular cross-section breaks the band structure symmetry. So, we discuss this point from the band structure and address optical properties of lattice with a circular cross-section cavity.

전력소자를 위한 새로운 홈구조 터미네이션 (A New Trench Termination for Power Semiconductor Devices)

  • 민원기;박남천
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1998년도 하계학술대회 논문집 D
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    • pp.1337-1339
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    • 1998
  • The trench termination scheme is introduced for high voltage devices. The curvature of the depletion region at field limiting ring is critical factor to determine the breakdown voltage. The smooth curvature of the depletion junction alleviate the electric field crowding effect around this region. In the trench field limiting ring, the radius of the depletion region is smaller than conventional field limiting ring, but the distance between every trench is spaced small enough to punchthrough before initiation of local breakdown. The trench field limiting ring on silicon can ne formed by RIE followed by oxidation on side wall surface of the trench, and polysilicon filling. The combined termination of this trench floating field ring and field plate have been designed and analyzed. The breakdown simulation by 2-dimensional TCAD shows that the cylindrical junction breakdown voltage for substrate doping might be 99 percent of the ideal breakdwon voltage for substrate doping concentration of $3\times10^{14}cm^{-3}$ with about $100{\mu}m$ of lateral termination width.

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Bobb in 성형품의 변형에 관한 연구 (A Study on Warpage of Bobbin Molded by Injection Molding Process)

  • 김병곤;민병현
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2001년도 춘계학술대회 논문집
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    • pp.811-814
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    • 2001
  • Warpage analysis of bobbin, molded by injection molding process was performed. Concerned with a mold design, cooling system was designed based on Taguchi method, the distance between cavity wall and cooling channel was most influent factor amongst four design variables like an inlet temperature of coolant, a coolant flow rate, a diameter of cooling channel, and the distance between cavity wall and cooling channel. Optimal packing processes to reduce the warpage of molded part was analyzed based on the response surface method by considering holding pressure. Their optimal processing conditions were 9.4 seconds, 5.3 seconds, 15.2 seconds, and 85MPa, respectively.

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The change of rock properties by artificial weathering tests and its implications for durability of building stones

  • Min Kyoung-Won;Park Jin-Dong
    • 한국지구물리탐사학회:학술대회논문집
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    • 한국지구물리탐사학회 2003년도 Proceedings of the international symposium on the fusion technology
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    • pp.557-560
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    • 2003
  • Some well-known artificial weathering tests such as freezing-thawing, acid immersion, and salt crystallization are adopted to examine the change of rock properties during the processes of artificial weathering. Granites and other rock types of limestone, marble and basalt collected from different quarries in south Korea were sampled for this study. All tests were performed up to 30 cycles and physical properties were measured after experiencing every ten cycles of artificial weathering tests. During the tests, the variation trends of rock properties were too variable to draw generalized variation patterns but it can be concluded that weathering agents have different effect on rock properties depending on weathering circumstance and time. Even in short terms of salt crystallization tests, some rocks were severely deformed and then burst, and in the early stages of salt weathering, recrystallized salts filling pores and cracks in rocks could be a important factor affecting rock properties.

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Double Resonance Perfect Absorption in a Dielectric Nanoparticle Array

  • Hong, Seokhyeon;Lee, Young Jin;Moon, Kihwan;Kwon, Soon-Hong
    • Current Optics and Photonics
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    • 제1권3호
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    • pp.228-232
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    • 2017
  • We propose a reflector-type perfect absorber with double absorption lines using electric and magnetic dipoles of Mie resonances in an array of silicon nanospheres on a silver substrate. In the visible range, hundreds of nanometer-sized nanospheres show strong absorption lines up to 99%, which are enhanced by the interference between Mie scattering and reflections from the silver substrate. The air gap distance between the silicon particles and silver substrate controls this interference, and the absorption wavelengths can be controlled by adjusting the diameter of the silicon particles over the entire range of visible wavelengths. Additionally, our structure has a filling factor of 0.322 when the absorbance is nearly 100%.

UBET를 이용한 리브-웨브형 링 단조에 관한 연구 (A study on rib-web shaped ring forging using UBET)

  • Kim, Y.H.;Bae, W.B.;Nam, K.H.
    • 한국정밀공학회지
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    • 제11권5호
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    • pp.134-142
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    • 1994
  • An upper bound elemental technique (UBET) is applied to predict variations of neutral plane and optimal position of the initial billet for rib-wep shaped ring forging. In the analysis, the neutral plane position and velocity fields are determined by minimizing the total power consump- tion with respect to chosen parameters. The degree of die-cavity filling by initial billet-position and the variations of neutral plane by friction condition are investigated. Experiments have been carried out with pure plasticine billets at room temperature. The theoretical predictions of the forging load and the flow pattern are in good agrement with the experimental results.

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Ultrahigh Vacuum Chemical Vapor Deposition (UHVCVD)법에 의한 GaAs와 InGaAs 박막의 선택 에피택시 (Selective Area Epitaxy of GaAs and InGaAs by Ultrahigh Vacuum Chemical vapor Deposition(UHVCVD))

  • 김성복
    • 한국진공학회지
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    • 제4권3호
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    • pp.275-282
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    • 1995
  • III족 원료 가스로 triethylgallium(TEGa)과 trimethylindium(TMIn)을 사용하고 V족 원료 가스로 사전 열 분해하지 않은 arsine(AsH3)과 monoethylarsine(MEAs)을 사용하여 ultrahigh vacuum chemical vapor deposition(UHVCVD)법으로 Si3N4로 패턴된 GaAs(100)기판 위에 GaAs와 InGaAsqkr막을 선택적으로 에피택시 성장을 하였다. V족 원료 가스를 사전 열 분해하지 않으므로 넓은 성장 온도 구간과 V/lll 비율에서도 선택적으로 박막이 성장되었다. 또한 선택 에피택시의 성장 메카니즘을 규명하기 위하여 다양한 filling factor(전체면적중 opening된 면적의 비율)를 가지는 기판을 제작하여 성장에 사용하였다. UHVCVD법에서는 마스크에 면적중 opening된 면적의 비율)를 가지는 기판을 제작하여 성장에 사용하였다. UHVCVD법에서는 마스크에 입사된 분자 상태의 원료 기체가 탈착된 후 표면 이동이나 가스 상태의 확산과정 없이 마스크로부터 제거되므로 패턴의 크기와 모양에 따른 성장 속도의 변화나 조성의 변화가 없을 뿐만 아니라 chemical beam epitaxy(CBE)/metalorganic molecular beam epitaxy(MOMBE)법에서 알려진 한계 성장온도 이하에서 선택 에피택시 성장이 이루어졌다.

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PZT/Epoxy (1-3형) 복합재료의 두께변화에 따른 압전특성 (Piezoelectric Properties on the Thickness of Specimens with PZT/Epoxy Composite Materials of 1-3 Connectivity)

  • 김용혁;김호기;김진수;이덕출
    • 한국세라믹학회지
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    • 제25권1호
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    • pp.7-14
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    • 1988
  • In this paper, piezoelectric composite materials of 1-3 connectivity were prepared by using "dicing-filling" technique with PZT ceramics and epoxy polymers, and the dependence of piezoelectric properties on the thickness of specimens was investigated. In case that the PZT volume percent is 18.1%, according to an increment of thickness, the dielectric constant of composites( 33) is unchangeable, which is about 200, the piezoelectric coefficient (d33) is somewhat increased, which is about 240-280 (PC/N) and the electromechanical coupling factor of thickness mode(kt) is proportioned, but radial mode(kp) is constant.

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Porous Si layer의 광학특성과 편광소자에의 응용 (Optical Properties of Porous-Si Layers on Si-substrate and its Application of Polarization Devices)

  • 구경완;황재효;백석화남;송촌화인
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1999년도 하계학술대회 논문집 E
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    • pp.2453-2455
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    • 1999
  • We propose that we use a porous-Si for a new spatial walk-off polarizing material with a large split angle. The beam-split an91e f is determined by the filling factor g(or porosity p) of the columnar dielectric substance and the slant angle $\theta$. Theoretically, by the assuming that $n_2$=3.5, and $n_1$=1 one can predict that a large split angle, up to $27^{\circ}$, is possible if one can construct such films with $Si.^{[3]}$ To accomplish this, we use porous-Si. As a result of theoretical simulation, the best structural parameters for attaining the maximum split angle $\phi$=$27.5^{\circ}$ are $\theta$=$58.7^{\circ}$ and p=57.6%.

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