• The Journal of Korean Institute of Communications and Information Sciences
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• v.16 no.11
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• pp.1179-1185
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• 1991

Ultrathin Reoxidized Nitrided Oxides were formed by lamp heated rapid thermal annealing in oxyzen at temperatures of $1050^{\circ}C$-$1100^{\circ}C$ for 20, 40 seconds. The electrical characteristics of ultrathin films were evaluated by leakage current breakdown voltage. TDDB. FN tunneling. Nitridation and reoxidition condition dependence of charge trapping properties. i.e.. the flat band voltage shift $({\Delta}V_{FB})$ and the increase of charge-to-breakdown $(Q_{BD})$ induced by a high field stress where studied. As the results of analysis. rapid thermal reoxidation was achieved striking improvement of dielectric integrity, the charge to breakdown was increased and flat band voltage shift was reduced.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.11 no.1
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• pp.53-63
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• 1986

In this paper the decoder of nonbinary code satisfying R>1/t has been designed and constructed, where R is the code rate and t is the error correcting capability. In order to design the error trapping decoder, the concept of covering monomial is used and them the decoder system using the (15, 11) Reed-Solomon code is implemented. Without Galois Fiedl multiplication and division circuits, the decoder system is simply constructed. In the decoding process, it takes 60clocks to decode one code word. Two symbol errors and eight binary burst errors are simultaneously corrected. This coding system is shown to be efficient when the channel error probability is approximately from $5{\times}10^-4$~$5{\times}10^-5$.

• Advances in materials Research
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• v.4 no.2
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• pp.113-132
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• 2015

The phenomena of high-voltage polarization and conductivity in oriented vinylidenefluoride and tetrafluoroethylene copolymer films have been investigated. It was shown that under certain electric fields, injection of carriers from the material of electrodes appears The barrier for holes injection in the copolymer was found to be lower than that for electrons. It results in more effective screening of the external field near the anode than near cathode. Electrones, ejected from cathode, creating negative charge by trapping on the surface. It is shown that the electrons injected from cathodes create a negative homocharge on the copolymer surface and then become captured on the surface shallow traps. Their nature has been studied by the x-ray photoelectron spectroscopy. It was shown that these traps may consist of chemical defects in the form of new functional groups formed by reactions of surface macromolecules with sputtered atoms of aluminum. The asymmetric shape of hysteresis curves was explained by the difference in mobility of injected holes and electrons. These factors caused appearance of "non-closed" hysteresis curves for fluorine-containing polymer ferroelectrics. Hysteresis phenomena observed at low electric fields (below coercive ones) are to associate with the behavior of the domains localized in the ordered regions formed during secondary crystallization of copolymers.

• Journal of the korean Society of Automotive Engineers
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• v.15 no.1
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• pp.55-66
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• 1993

The characteristics of the flow processes in the cylinder of the two-stroke cycle engines have become the subject of increasing and attention owing to the simplicity and the higher power per unit weight of the two-stroke cycle engine. Among the many factors which influence on the scavenging flow, the port angle is important factor. Hence, four different type models with one inlet-port and two side-ports are studied to show the effect of port angle on the laminar scavenging flow. When the inlet-port axial is relatively larger than the side-port axial angle, it is showed that the fresh charge penetrate into the burned gas and displace it first toward the cylinder head and then toward the exhaust port. When the inlet-port axial angle is much less than the side-port axial angle, the fresh charge through the inlet-port directly move toward the exhaust port. The result showed that the model A may suppress the generation of vortices in the vicinity of inlet and side prots which restrict the sufficient supply of fresh charge and obstruct the perfect displacement of all combustion products.

• Journal of Ecology and Environment
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• v.42 no.4
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• pp.150-154
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• 2018

In lotic wetlands, runner reed (Phragmites japonicus) plays a role as a pioneer, which helps other plant species to settle by making dense roots trapping floating-sediments. In lentic wetlands, on the other hand, P. japonicus could play a role as an invader threatening biodiversity by forming tall and dense stands. To conserve an abandoned paddy terrace in mountainous areas, a habitat of an endangered dragonfly species (Nannophya pygmaea), from the monotypic-occupation by P. japonicus, we applied three kinds of treatment: (1) hand-clipping in 2009, (2) mechanical excavating in 2012, and (3) planting of alternative vegetational unit in 2012. We have monitored vegetation changes in the wetland in 2008~2012 and 2017. Vegetation cover of P. japonicus sharply decreased from 43% in 2011 to 16% in 2012 by the mechanical excavation. After 5 years from applying the treatment, Schoenoplectiella mucronata that was utilized in the planting became the predominant species instead of P. japonicus and the number of wetland plant species increased from 16 to 25 with the shift in species composition. This study showed the utility of three control methods of P. japonicas in a lentic wetland.

• Journal of Sensor Science and Technology
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• v.31 no.1
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• pp.41-44
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• 2022

In this study, we have fabricated and characterized vertical double-gate (DG) InGaAs tunnel field-effect-transistors (TFETs) with Al₂O₃/HfO₂ = 1/5 nm bi-layer gate dielectric by employing a top-down approach. The device exhibited excellent characteristics including a minimum subthreshold swing of 60 mV/decade, a maximum transconductance of 141 µS/㎛, and an on/off current ratio of over 10³ at 20℃. Although the TFETs were fabricated using a dry etch-based top-down approach, the values of DIBL and hysteresis were as low as 40 mV/V and below 10 mV, respectively. By evaluating the effects of constant voltage and hot carrier injection stress on the vertical DG InGaAs TFET, we have identified the dominant charge trapping mechanism in TFETs.

• Current Optics and Photonics
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• v.7 no.2
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• pp.207-212
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• 2023

In this paper, we introduce our system for manufacturing a Rb vapor cell and describe its fabrication process in a sequence of removing impurities, cold trapping, and sealing off. Saturated absorption spectroscopy was performed to verify the quality of our cell by comparing it to that of a commercial one. By using the lab-fabricated Rb vapor cell, we observed electromagnetically induced transparency in a ladder-type system corresponding to the 5S_1/2-5P_3/2-28D_5/2 transition of the ⁸⁵Rb atom. A highly excited Rydberg atomic system was prepared using two counter-propagating external cavity diode lasers with wavelengths of 780 nm and 480 nm. We also observed the Autler-Townes splitting signal while a radio-frequency source around 100 GHz incidents into the Rydberg atomic medium.

• Journal of Adhesion and Interface
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• v.22 no.3
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• pp.91-97
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• 2021

By introducing an organic interlayer on the Parylene C dielectric surface, the electrical device performances and the operating stabilities of organic field-effect transistors (OFETs) were improved. To achieve this goal, hexamethyldisilazane (HMDS) and octadecyltrichlorosilane (ODTS), as the organic interlayer materials, were used to control the surface energy of the Parylene C dielectrics. For the bare case used with the pristine Parylene C dielectrics, the field-effect mobility (μ_FET) and threshold voltage (V_th) of dinaphtho[2,3-b:2',3'-f ]thieno[3,2-b]- thiophene (DNTT) FET devices were measured at 0.12 cm²V^-1s^-1 and - 5.23 V, respectively. On the other hand, the OFET devices with HMDS- and ODTS-modified cases showed the improved μ_FET values of 0.32 and 0.34 cm²V^-1s^-1, respectively. More important point is that the μ_FET and V_th of the DNTT FET device with the ODTS-modified Parylene C dielectric presented the smallest changes during a repeated measurement of 1000 times, implying that it has the most stable operating stability. The results could be meaned that the organic interlayer, especially ODTS, effectively covers the Parylene C dielectric surface with alkyl chains and reduces the charge trapping at the interface region between active layer and dielectric, thereby improving the electrical operating stability.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.54.2-54.2
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• 2010

최근까지는 주로 비정질 실리콘이 디스플레이의 채널층으로 상용화 되어왔다. 비정질 실리콘 기반의 박막 트랜지스터는 제작의 경제성 및 균일성을 가지고 있어서 널리 상용화되고 있다. 하지만 비정질 실리콘의 구조적인 문제인 낮은 전자 이동도(< $1\;cm^2/Vs$)로 인하여 디스플레이의 대면적화에 부적합하며, 광학적으로 불투명한 특성을 갖기 때문에 차세대 디스플레이의 응용에 불리한 점이 있다. 이런 문제점의 대안으로 현재 국내외 여러 연구 그룹에서 산화물 기반의 반도체를 박막 트랜지스터의 채널층으로 사용하려는 연구가 진행중이다. 산화물 기반의 반도체는 밴드갭이 넓어서 광학적으로 투명하고, 상온에서 증착이 가능하며, 비정질 실리콘에 비해 월등히 우수한 이동도를 가짐으로 디스플레이의 대면적화에 유리하다. 특히 Zinc Oxide의 경우, band gap이 3.4eV로써, transparent conductors, varistors, surface acoustic waves, gas sensors, piezoelectric transducers 그리고 UV detectors 등의 많은 응용에 쓰이고 있다. 또한, a-Si TFTs에 비해 ZnO-based TFTs의 경우 우수한 소자 성능과 신뢰성을 나타내며, 대면적 제조시 우수한 균일성 및 낮은 생산비용이 장점이다. 그러나 ZnO-baesd TFTs의 경우 일정한 bias 아래에서 threshold voltage가 이동하는 문제점이 displays의 소자로 적용하는데 매우 중요하고 문제점으로 여겨진다. 특히 gate insulator와 channel layer사이의 interface에서의 defect에 의한 charge trapping이 이러한 문제점들을 야기한다고 보고되어진다. 본 연구에서는 Zinc Oxide 기반의 박막 트랜지스터를 DC magnetron sputtering을 이용하여 상온에서 제작을 하였다. 또한, $Si_3N_4$ 기판 위에 electron cyclotron resonance (ECR) $O_2$ plasma 처리와 plasma-enhanced chemical vapor deposition (PECVD)를 통하여 $SiO_2$ 를 10nm 증착을 하여 interface의 개선을 시도하였다. 그리고 TFTs 소자의 출력 특성 및 전이 특성을 평가를 하였고, 소자의 field effect mobility의 값이 향상을 하였다. 또한 Temperature, Bias Temperature stability의 조건에서 안정성을 평가를 하였다. 이러한 interface treatment는 안정성의 향상을 시킴으로써 대면적 디스플레의 적용에 비정질 실리콘을 대체할 유력한 물질이라고 생각된다.

• Journal of the Korean Graphic Arts Communication Society
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• v.30 no.2
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• pp.35-45
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• 2012

Need color separation process to appear number of minimum printing plate waterway maximum printing color at printing process. This time, printing plate is separated three primary colors of C(cyan), M(magenta), Y(yellow). Appear all colors of printing such three primary colors. But, three primary color ink appears 100% dark gray that is not clean as chroma is neared color to 0 because is not pure. As well as, the ink area rate that is whole by over print amount increase of three primary is expanded. As a result, influence in secondary printablity set-off growth by inaccurate color reproduction and ink dry badness, trapping efficiency decline etc.. Apply ink saving method that is replaced as K ink in consisted dark color constituent because three primary colors are over print each other adding one more K(black) plate by method to improve these problem. Therefore, can reduce extension of the total ink area rate, and help in correct color appearance control. As well as, eco-friendly printing process attains improving printablity at the same time curtailment of printing expense by reducing requirement of total ink. Usually, there are UCR(under color removal) and GCR(gray component replacement) to ink saving application method. But, the practical use limit is insufficient state to tribe of technological investigation or field application about these method in domestic printing field. Therefore, in this research, ink saving been bringing by one method of eco-friendly printing confirmed that is applicable in usual domestic printing environment. Also, searched result getting in printablity by ink saving application.