• 제목/요약/키워드: field emission properties

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탄소나노튜브를 이용한 텅스텐 나노팁 전계방출기 제작 (Fabrication of a Nano-sized Conical-type Tungsten Field-emitter Based on Carbon Nanotubes)

  • 박창균;김종필;김영광;윤성준;김원;박진석
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2007년도 Techno-Fair 및 추계학술대회 논문집 전기물성,응용부문
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    • pp.90-91
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    • 2007
  • Nano-sized conical-type tungsten(W) field-emitters based on carbon nanotubes(CNTs) are fabricated with the configuration of CNTs/catalyst/buffer/W-tip by adopting various buffer layers, such as TiN, Al, Al/TiN, and Al/hi/TiN. This study focuses on elucidating how the buffer layers affect the structural properties of CNTs and the electron-emission characteristics of CNT-emitters. Field-emission scanning electron microscopy(FESEM) and high-resolution transmission electron microscopy(HRTEM) are used to monitor the nanostructures and surface morphologies of all the catalysts and CNTs grown. The crystalline structure of CNTs is also characterized by Raman spectroscopy. Furthermore, the measurement of field-emission characteristics for all the field-emitters fabricated shows that the emitter using the Al/Ni/TiN stacked buffer reveals the most excellent performances, such as maximum emission current of $202{\mu}A$, threshold field of 2.08V/${\mu}m$, and long-term (up to 24h) stability of emission current.

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Ag-Cu합금 코팅된 탄소나노튜브의 전계방출 특성 (Field emission properties of Ag-Cu-alloy coated CNT-emitters)

  • 이승엽;류동헌;홍준용;염민형;양지훈;최원철;권명회;박종윤
    • 한국진공학회지
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    • 제16권4호
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    • pp.291-297
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    • 2007
  • 본 연구에서는 Ag-Cu합금 코팅에 의한 탄소나노튜브의 전계방출특성 변화를 연구하였다. 화학기상증착 방법을 사용하여 수직 성장시킨 탄소나노튜브에 직류 마그네트론 스퍼터를 이용하여 Ag-Cu합금을 증착하였고, 열처리 전 후의 탄소나노튜브의 표면형상 변화와 전계방출특성에 변화를 연구하였다. 연구결과 Ag-Cu합금 코팅으로 전계방출 문턱전압이 현저히 낮아졌으며 전류밀도는 $6V/{\mu}m$의 인가전압 하에서 약 5배 향상된 것을 확인하였다. 또한 Ag-Cu합금이 코팅된 탄소나노튜브는 산소가 많이 포함된 분위기에서도 안정적인 전계방출 특성을 보였으며, 이는 Ag-Cu합금 코팅이 분위기 진공에 상존하는 산소기체가 탄소나노튜브를 공격하는 것을 막아주는 역할을 하여 열악한 분위기에서도 전계방출이 안정적으로 발생하였기 때문인 것으로 생각된다.

탄소나노튜브를 이용한 텅스텐 나노팁 전계방출기 제작 (Fabrication of a nano-sized conical-type tungsten field-emitter based on carbon nanotubes)

  • 박창균;김종필;김영광;박진석
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2008년도 제39회 하계학술대회
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    • pp.1220-1221
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    • 2008
  • Submicron-sized conical-type tungsten(W) field-emitters based on carbon nanotubes(CNTs) are fabricated with the configuration of CNTs/catalyst(Ni)/buffer(Al/Ni/TiN)/W-tip. This study focuses on elucidating how the Al/Ni/TiN stacked buffer layer affects the structural properties of CNTs and the electron-emission characteristics of CNT-emitters. Field-emission scanning electron microscopy(FESEM), high-resolution transmission electron microscopy(HRTEM), and x-ray photoelectron spectroscopy(XPS) are used to monitor the nanostructures, surface morphologies, chemical bonds of all the catalysts and CNTs grown. The crystalline structure of CNTs is also characterized by Raman spectroscopy. Furthermore, the measurement of field-emission characteristics for the field-emitters fabricated shows that the emitter using the Al/Ni/TiN stacked buffer reveals the excellent performances.

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Preparation of uniformly dispersed iron nanoparticles and growth of carbon nanotube

  • Kim, Do-Yoon;Yoo, Ji-Beom;Berdinsky, A.S.;Park, Chong-Yun;Han, In-Taek;Jung, Jae-Eun;Jin, Yong-Wan;Kim, Jong-Min
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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    • pp.462-464
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    • 2004
  • We studied the growth characteristics of carbon nanotubes which was grown from uniformly dispersed iron nanoparticles prepared from iron-acetate [Fe(II)$(CH_3COO)_2$]. The density of CNT was controlled from precursor concentrations. We also investigated the field emission properties of CNTs. We found that the optimization of CNT density is an important factor for field_emission properties.

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Characterizations of Highly Ordered TiO2 Nanotube Arrays Obtained by Anodic Oxidation

  • Park, Hun;Kim, Ho-Gi;Choi, Won-Youl
    • Transactions on Electrical and Electronic Materials
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    • 제11권3호
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    • pp.112-115
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    • 2010
  • This paper provides the properties of $TiO_2$ nanotube arrays which are fabricated by anodic oxidation of Ti metal. Highly ordered $TiO_2$ nanotube arrays could be obtained by anodic oxidation of Ti foil in $0.3\;wt{\cdot}%$ $NH_4F$ contained ethylene glycol solution at $30^{\circ}C$. The length, pore size, wall thickness, tube diameter etc. of $TiO_2$ nanotube arrays were analyzed by field emission scanning electron microscopy. Their crystal properties were studied by field emission transmission electron microscopy and X-ray photoelectron spectroscopy.

Electronic and Vibrational Spectroscopy of cis-Diisothiocyanato(1,4,8,11-tetraazacyclotetradecane)chromium(Ⅲ) Thiocyanate

  • Choi, Jong-Ha;Park, Yu-Chul
    • Bulletin of the Korean Chemical Society
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    • 제24권3호
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    • pp.384-388
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    • 2003
  • The emission and excitation spectra of $cis-[Cr(cyclam)(NCS)_2]NCS$ (cyclam = 1,4,8,11-tetraazacyclotetradecane) taken at 77 K are reported. The infrared and visible spectra at room temperature are also measured. The vibrational intervals due to the electronic ground state are extracted from the far-infrared and emission spectra. The ten pure electronic origins due to spin-allowed and spin-forbidden transitions are assigned by analyzing the absorption and excitation spectra. Using the observed transitions, a ligand field analysis has been performed to determine the bonding properties of the coordinated ligands in the title chromium(Ⅲ) complex. According to the results, it is found that nitrogen atoms of the cyclam ligand have a strong σ-donor character, while the NCS ligand has medium σ- and π-donor properties toward chromium(Ⅲ) ion.

Enhanced Field Emission Properties of Strain controlled ZnO Nanowire Arrays Synthesized by Employing Substrate Hanging Method

  • Raghavan, C.M.;Yan, Changzeng;Patole, Shashikant P.;Yoo, J.B.;Kang, Dae-Joon
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.576-576
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    • 2012
  • High quality single crystalline strain controlled wurtzite ZnO nanowire arrays have been grown on conductive silicon and ITO substrates by a facile hydrothermal method. The diameter of the nanowires was found to be less than 90 nm approximately for both of the two kinds of substrates. The quality of the ZnO nanowire arrays is dramatically improved by hanging the substrate above from the bottom of the Teflon lined autoclave. The structural investigation indicates the preferential orientation of the nanowire along c-axis. In order to make the convincible comparison, the photoluminescence property of the nanowire arrays grown under different conditions are measured, the sharp near band edge emission from PL, low turn-on voltage ($1.9V/{\mu}m$) from field emission measurement and Fowler-Nordheim plot was investigated from ZnO nanowire arrays grown by proposed substrate hanging method.

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몰리브덴 팁 전계 방출 소자의 제조 및 다이아몬드 상 카본의 코팅효과 (Fabrication of Mo-tip Field Emitter Array and Diamond-like Carbon Coating Effects)

  • 주병권;정재훈;김훈;이상조;이윤희;차균현;오명환
    • 한국전기전자재료학회논문지
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    • 제11권7호
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    • pp.508-516
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    • 1998
  • Mo-tip field emitter arrays(FEAs) were fabricated by conventional Spindt process and their life time characteristics and failure mode were evaluated. The fabricated Mo-tip FEA could generate at least $0.35\{mu} A/tip$ emission current for about 320 persistently under a constant gate bias of 140 V and was finally destroyed through self-healing mode. Thin diamond-like carbon films were coated on the M-tip by plasma-enhanced CVD and the dependence of emission properties upon the DLC thickness was investigated. By DLC coating, the turn-on voltage and emission current were appeared to be improved whereas the current fluctuation was increased in the DLC thickness range of $0~1,000\{AA}$.

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원적외선 방출 특성을 갖는 나노 웹의 제조 및 원적외선 방사 특성에 관한 연구 (Fabrication of Ceramic Particles Deposited Nano-web using Electrospinning Process and Its Far-infrared Ray Emission Property)

  • 홍소야;이창환;김주용
    • 한국염색가공학회지
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    • 제22권2호
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    • pp.118-122
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    • 2010
  • The interest in textile which has far-infrared ray emissive property has been increased in the field of biophysics and medicine. In this study, far-infrared ray emissive polyurethane nano-web was obtained using electrospinning of polyurethane(PU) solution mixed with ceramics powder and far-infrared ray emissive properties of nano-web were evaluated by measuring far-infrared ray emission power and emissivity(%). To investigate the influence of concentration of ceramics powder in PU solution and temperature for far-infrared ray emissive properties, far-infrared ray emissivity was measured at varied temperature using various nano-web including varied concentration of ceramics powder. Polyurethane nano-web was characterized by SEM to observe the deposition of ceramics powder on polyurethane nano-web surface. The far-infrared ray emissivity was increased with the concentration of ceramics powder in the nano-web. The far-infrared ray emission power was enhanced with increasing temperature of the samples; however, far-infrared ray emissivity was decreased with increasing temperature because the increase of emission power of ceramic containing nano-web was lower than the emission power of black body one.

나노카본을 이용한 조명용 신광원에 관한 연구 (Study of New Light Source with Nano Carbon Material)

  • 김광복;김용원;정한기;송윤호
    • 한국조명전기설비학회:학술대회논문집
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    • 한국조명전기설비학회 2006년도 춘계학술대회 논문집
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    • pp.31-34
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    • 2006
  • The characteristic of carbon nano fiber (CNF) as electron emitters was described. Carbon nano fiber (CNF) of herringbone was prepared by thermal chemical vapor deposition(CVD), mixed with binders and conductive materials, and then were formed by screen-printing process. In order to increase effectively field emissions, the surface treatment of rubbing & peel-off was applied to the printed CNF emitters on cathode electrode. The measurements of field emission properties were carried out by using a diode structure inline vacuum chamber. CNF of herringbone type showed good emission properties that a turn on field was as low as $2.5V/{\mu}m$ and current density was as large as $0.15mA/cm^2$ of $4.5V/{\mu}m$ with electric field. After the vacuum packaged panel of 5-inch in diagonal, the measured white brightness was as high as $7000cd/m^2$ at 1900V of anode and 700V of gate voltage.

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