• 한국재료학회:학술대회논문집
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• 한국재료학회 2002년도 추계학술발표강연 및 논문개요집
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• pp.45-45
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• 2002

• 한국진공학회지
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• 제10권1호
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• pp.51-56
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• 2001

MFISFET(Metal-ferroelectric-insulator-semiconductor-field effect transistor)에의 적용을 위한 절연체로서 CeO$_2$ 박막을 r.f. magnetron sputtering법에 의해 제조하였다. 스퍼터링시 증착개스는 Ar과 $O_2$를 사용하였으며 산소분압비에 따른 $CeO_2$박막의 결정성 및 전기적 특성에 미치는 영향을 평가하였다. p형-Si(100)기판 위에 $600^{\circ}C$에서 증착된 $CeO_2$ 박막들은(200)방향으로 우선방향성을 가지고 성장하였으며 Ar만으로 증착된 박막의 우선방향성은 증가하였으나 상대적으로 많은 하전입자와 표면 거칠기로 인해 C-V특성에서 큰 이력특성을 보였고 산소분압비가 증가함에 따라 양호한 특성을 보였다. 이것은 이동가능한 이온전하의 감소에 기인한다고 할 수 있다. Ce:O의 비는 모든 박막에서 1:2.22~2.42를 보여 산소과잉의 조성을 나타냈으며 산소분압비에 따라 제조된 박막들의 누설전류값은 100 kV/cm의 전계에서 $10^{-7}$~$10^{-8}$A의 차수를 보였다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2006년도 하계종합학술대회
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• pp.981-982
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• 2006

In this study, the synthesis and semiconducting properties of cation and defect-doped KTaO3 film is reported. KTaO3is an important material for optoelectronic and tunable microwave applications. It is an incipient ferroelectric with a cubic structure that becomes ferroelectric when doped with Nb. the films were grown on (001) MgO single crystal substrates using pulsed-laser deposition. Semiconducting behavior is achieved by inducing oxygen vacancies in the KTaO3 lattice via growth in a hydrogen atmosphere. The resistivity of semiconducting KTaO3:Ca films was as low as 10cm, and n-type semiconducting behavior was indicated. Hall mobility and carrier concentration were 0.27 cm2/Vs and 3.21018cm-3.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.83-86
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• 1998

Ferroelectric PZT(40/67)/PZT(60/40)heterolayered thin films were Prepared by the alkoxide-based Sol-Gel method. PZT(40/60) and PZT(60/40) stock solutions were made and spin-coated on the P7Ti/Si02/Si substrate alternately. These PZT(40/60) and PZT(60/40) films were dried at 300$^{\circ}C$ for 30min to remove organic materials and were sintered at 650$^{\circ}C$ for 1 hour to crystalize into a perovskite structure. The coating and heating procedure were repeated 6 times to form heterolayered films. Increasing the number of coating, coercive field was decreased. The relative dielectric constant, loss, remanent polarization and coercive field of the 4-coated PZT heterolayered were 1200, 4.1[%], 30.794[${\mu}$C/㎡] and 147.22[kV/cm], respectively.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1993년도 하계학술대회 논문집 B
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• pp.1106-1109
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• 1993

Ferroelectric thin films of PZT with differnt Zr/Ti ratio were prepared by sol-gel processing and annealed by rapid-thermal-annealing at $500^{\circ}C-700^{\circ}C$ for 10sec-1min. The structure of the annealed films were examined by X-ray diffraction and SEM. Maximum remnant polarization of 10.24 ${\mu}m/cm^2$ and coercive field of 70 KV/cm were obtained from hysteresis curve or the film.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 반도체재료
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• pp.8-11
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• 2001

In this study. the recovery of plasma induced damage in the etched PZT thin film with $O_2$ re-annealing have been investigated. The PZT thin films were etched as a function of $Cl_2/Ar$ and additive $CF_4$ into $Cl_{2}(80%)/Ar(20)%$. The etch rates of PZT thin films were $1600\dot{A}/min$ at $Cl_{2}(80%)/Ar(20)%$ gas mixing ratio and $1970\dot{A}/min$ at 30 % additive $CF_4$ into $Cl_{2}(80%)/Ar(20)%$. The etched profile of PZT films was obtained above 70 by SEM. In order to recovery properties of PZT thin films after etching, the etched PZT thin films were re-annealed at various temperatures in $O_2$ atmosphere. From the hysteresis curves, ferroelectrical properties are improved by $O_2$ re-annealing process. The improvement of ferroelectric behavior at annealed sample is consistent with the increase of the (100) and (200) PZT phase revealed by x-ray diffraction (XRD). From XPS analysis, intensity of Pb-O, Zr-O and Ti-O peak are increased and the chemical residue peak is reduced by $O_2$ re-annealing. The ferroelectric behavior consistent with the dielectric nature of TixOy is recovered by $O_2$ recombination during rapid thermal annealing process. From AFM images, it shows that the surface roughness of re-annealed sample after etching is improved.

• Transactions on Electrical and Electronic Materials
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• 제6권2호
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• pp.51-56
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• 2005

Ferroelectric Bi$_{3.35}$Sm$_{0.65}$Ti$_{3}$O$_{12}$(BSmT) thin films were synthesized using a sol-gel process. Bi(TMHD)$_{3}$, Sm$_{5}$(O$^{i}$Pr)13, Ti(O$^{i}$Pr)4 were used as the precursors, which were dissolved in 2­methoxyethanol. The BSmT thin films were deposited on Pt/TiO$_{x}$/SiO$_{2}$/Si substrates by spin­coating. The electrical properties of the thin films were enhanced using rapid thermal annealing process (RTA) at 600 $^{circ}$C for 1 min in O$_{2}$. Thereafter, the thin films were annealed from 600 to 720 $^{circ}$C in oxygen ambient for 1 hr, which was followed by post-annealed for 1 hr after depositing a Pt electrode to enhance the electrical properties. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to analyze the crystallinity and surface morphology of layered perovskite phase, respectively. The remanent polarization value of the BSmT thin films annealed at 720 $^{circ}$C after the RTA treatment was 35.31 $\mu$C/cmz at an applied voltage of 5 V.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2012년도 임시총회 및 하계학술연구발표회
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• pp.121-122
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• 2012

Iron-excess gallium ferrite, $Ga_{0.6}Fe_{1.4}O_3$ (GFO), is known to have room-temperature ferromagnetic phases and potentially exhibit ferroelectricity as well [1]. But, leaky polarization-electric field (PE) hysteresis curves of the GFO thin film are hurdle to prove its spontaneous polarization, in other words, ferroelecticity. One of the reasons that the GFO films have leaky PE hysteresis loop is carrier hopping between $Fe^{2+}$ and $Fe^{3+}$ sites due to oxygen deficiency. We focus on reducing conducting current by substituting divalent cations at $Fe^{2+}$ sites. GFO thin films were grown epitaxially along b-axis normal to $SrRuO_3/SrTiO_3$ (111) substrates by pulsed laser deposition. Current density of the ion-substituted GFO thin films was reduced by $10^3$ or more. Ferroelectric properties of the ion-substituted GFO thin films were measured using macroscopic and microscopic schemes. In particular, local ferroelectric properties of the GFO thin films were exhibited and their remnant polarization and piezoelectric d33 coefficient were obtained.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.41-43
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• 2004

Dielectric thin films of $(Pb_{0.72}La_{0.28})Ti_{0.93}O_3$ were deposited on $Pt(111)/Ti/SiO_2/Si$ substrates in situ by pulsed laser deposition(PLD) and annealed with different gases which are forming gas and oxygen gas, respectively. The diffusion of hydrogen into the ferroelectric film was caused by annealing process and resulted in the destruction of polarization. The dielectric properties of forming gas annealed PLT thin films, which are dielectric constant, ferroelectric characteristic, and leakage current characteristics, were degraded

• 한국진공학회지
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• 제17권6호
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• pp.560-565
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• 2008

본 연구에서는 PLZT 박막이 $(Pb_{0.92}La_{0.08})(Zr_{0.65}Ti_{0.35})O_3$ 조성의 타겟을 이용한 R.F. 마그네트론 스퍼터링공정에 의해 실리콘 웨이퍼 위에 증착되었다. PLZT 박막의 강유전특성을 향상시키기 위해 buffer layer인 $TiO_2$ 층이 사용되었으며, buffer layer의 후열처리온도 변화에 따른 PLZT 박막의 결정성과 유전특성이 연구되었다. buffer layer이 삽입되지 않은 PLZT 박막의 잔류분극값은 $19.13{\mu}C/cm^2$ 이었으며, 반면 $TiO_2$ buffer layer을 삽인한 후 후열처리 온도를 $600^{\circ}C$로 증가시킨 PLZT 박막의 잔류분극값은 $146.62{\mu}C/cm^2$까지 크게 증가하였다. 하부전극 백금(Pt)과 PLZT 박막층 사이에 삽입된 $TiO_2$ buffer layer의 특성과 PLZT 박막의 유전특성에 미치는 영향을 살펴보기 위해 글로우 방전 분광법 (glow discharge spectroscopy, GDS)이 PLZT 박막(PLZT/($TiO_2$)/Pt/Ti/$SiO_2$/Si wafer)에 대해 수행 되었다.