Fabrication of PZT ferroelectric thin films by rapid thermal annealing

급속 열처리에 의한 PZT 강유전 박막의 제작

  • 백동수 (연세대학교 전기공학과) ;
  • 김현권 (연세대학교 전기공학과) ;
  • 최형욱 (연세대학교 전기공학과) ;
  • 김준한 (연세대학교 전기공학과) ;
  • 박창엽 (연세대학교 전기공학과) ;
  • 신현용 (플로리다 주립대학교 전기공학과)
  • Published : 1993.07.18

Abstract

Ferroelectric thin films of PZT with differnt Zr/Ti ratio were prepared by sol-gel processing and annealed by rapid-thermal-annealing at $500^{\circ}C-700^{\circ}C$ for 10sec-1min. The structure of the annealed films were examined by X-ray diffraction and SEM. Maximum remnant polarization of 10.24 ${\mu}m/cm^2$ and coercive field of 70 KV/cm were obtained from hysteresis curve or the film.

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