• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.1229-1232
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• 2004

The ratio of optimized concentration on optical characteristics for phase-separated composite organic films (PSCOF) liquid crystal display is 30% of pre-polymer (NOA65) and 70% of ferroelectric liquid crystal (Felix). The layer structure in ferroelectric liquid crystal cell made by 30% NOA65 and 70% Felix materials is tilt-bookshelf layer structure. The angle of tilt-bookshelf structure are 17$^{\circ}$, 12$^{\circ}$ which are almost same of tilt angle of ferroelectric liquid crystal in Sm $C^{\ast}$ phase. We know that this result is from compensating the layer buckling. In this paper, we will discuss the effect of layer structure in PSCOF cell on ratio of concentration between pre-polymer and liquid crystal by x-ray measurements. We believe that technology of PSCOF is a good solution to solve the problems of align-defect and mechanical shock for future TV application and plastic LCD.

• E2M - 전기 전자와 첨단 소재
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• 제7권2호
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• pp.152-156
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• 1994

The rapid thermal annealing effects of Sol-Gel derived ferroelectric PZT thin films were investigated. It was found that rapid thermal annealing(RTA) of spin coated thin films on silicon typically >$800^{\circ}C$ for about 1 min. was changed to the perovskite phase. Rapid thermally annealed films recorded maximum remanent polarization of about 5 .mu.C/cm$^{2}$, coercive field of around 30kV/cm. The switching time for polarization reversal was about 220ns. The films of RTA process showed smooth surface, and high breakdown voltages of over 1 MV/cm and resistivity of $1{\times}{10^12}$ .ohm.cm at 1 MV/cm. It was verified that the polarization reversal of the PZT film was varied partially with applying the multiple short pulse.

• 대한기계학회논문집A
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• 제27권6호
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• pp.849-856
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• 2003

A three-dimensional constitutive model for polarization switching in ferroelectric materials is used to predict the formation of switching zones in an atomic force microscopy(AFM) tip/ferroelectric thin film/bottom electrode system via finite element simulation. Initially the ferrolectric film is poled upward and the bottom electrode is grounded. A strong dc field is imposed on a fixed point of the top surface of the film through the AFM tip. A small switching zone with downward polarization is nucleated and grows with time. It is found that initially the shape of the switched zone is that of a bulgy dagger, but later turn to the shape of a reversed cup with the lower part wider than the upper part. It can also be concluded that the size of switching zones increases with the period of applied electric potential. The present results are qualitatively consistent with experimental observations.

• 한국세라믹학회지
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• 제54권3호
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• pp.235-242
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• 2017

Changes in polarization and thermal expansion coefficients during temperature increase of a poled lead zirconate titanate (PZT) cube specimen switched by an electric field at room temperature are measured. The measured data are analyzed to construct governing differential equations for polarization and strain changes. By solving the differential equations, an experimental formula for the high temperature behavior of ferroelectric materials is obtained. It is found that the predictions by the formula are in good agreement with measures. From the viewpoint of macroscopic remnant state variables, it appears that the processes of electric field-induced switching at different temperatures are identical and independent of temperature between $20^{\circ}C$ and $110^{\circ}C$.

• 한국전기전자재료학회논문지
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• 제13권3호
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• pp.200-205
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• 2000

This paper describes the structure modeling and operation characteristics of MFMIS(metal-ferroelectric-metal-insulator-semiconductor) device using the Tsuprem4 which is a semiconductor device tool by Avanti. MFMIS device is being studied for nonvolatile memory application at various semiconductor laboratory but it is difficult to fabricate and analyze MFMIS devices using the semiconductor simulation tool: Tsuprem4, medici and etc. So the new library and new materials parameters for adjusting ferroelectric material and platinum electrodes in the tools are studied. In this paper structural model and operation characteristics of MFMIS devices are measured, which can be easily adopted to analysis of MFMIS device for nonvolatile memory device application.

• Journal of the Korean Physical Society
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• 제73권10호
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• pp.1561-1565
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• 2018

The dielectric properties of the uniaxial relaxor ferroelectric $Sr_xBa_{1-x}Nb_2O_6$ with x = 0.75 were investigated along the polar [001] direction as a function of temperature. The capacitance maximum showed the frequency dispersion commonly observed in relaxors. Additional weak dielectric anomalies were observed in the paraelectric phase; they were only seen during the heating process and disappeared upon subsequent cooling. These were attributed to the existence of large polar clusters strongly pinned at defects and/or to random fields and their metastable characters. Aligning the ferroelectric domains along the polar axis at room temperature removed the high-temperature dielectric anomalies. The dependences of the capacitance and the dielectric maximum temperature on the magnitude of the poling field were investigated.

• 한국세라믹학회지
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• 제55권5호
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• pp.419-439
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• 2018

Piezoelectric materials are essential parts of the electronics and electrical equipment used for consumer and industrial applications, such as ultrasonic piezoelectric transducers, sensors, actuators, transformers, and resonators. In this review, the development of piezoelectric materials and the figures of merit for various electromechanical applications are surveyed, focusing on piezoelectric crystals, i.e., the high-performance relaxor-$PbTiO_3$-based perovskite ferroelectric crystals and nonferroelectric high-temperature piezoelectric crystals. The uniqueness of these crystals is discussed with respect to different usages. Finally, the existing challenges and perspective for the piezoelectric crystals are discussed, with an emphasis on the temperature-dependent properties, from cryogenic temperatures up to the ultrahigh-temperature usage range.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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• pp.533-534
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• 2006

1mm-thick BLT ceramics were sintered in accordance with a bulk ceramic fabrication process. All XRD peaks detected in the sintered ceramics were indexed as the Bi-layered perovskite structure without secondary phases. Density was increased with increasing the sintering temperature up to $1050\;^{\circ}C$ and the maximum value was about 98% of the theoretical density. The remanent polarization (2Pr) value of BLT ceramic sintered at $1050\;^{\circ}C$ was approximately $6.5\;{\mu}C/cm^2$ at the applied voltage of 4.5kV. From these results, a BLT ceramic target for plused laser deposition (PLD) system was successfully fabricated.

• E2M - 전기 전자와 첨단 소재
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• 제9권2호
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• pp.132-137
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• 1996

Pb(Zr$_{x}$Ti$_{1-x}$ )O$_{3}$ solutions prepared by sol-gel processing with different Zr/Ti ratio were coated on Pt/SiO$_{2}$/Si substrates using spin coating method. Coated films were annealed by rapid thermal annealing at 650.deg. C for 20sec to fabricate Pb(Zr, Ti)O$_{3}$ ferroelectric thin films. Electrical properties of the films such as dielectric constant and loss, ferroelectric hysteresis, fatigue, switching time, and leakage current were measured. Hysteresis of the films with different Zr/Ti ratio yield Pr ranging 10-21.mu.C/cm$^{2}$, E$_{c}$ ranging 37.5-137.5kV/cm. Hysteresis curve was changed from square-type to slim type according to increasing Zr contents. Switching time was faster than 180ns, and leakage current was about 20.mu.A/cm$^{2}$. The film underwent above 10$^{8}$ cycles of reversed polarization showed fatigue with increased coercive field and decreased remnant polarization.tion.

• E2M - 전기 전자와 첨단 소재
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• 제9권8호
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• pp.836-850
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• 1996

In this study, we have analyzed structural analysis and measured ferroelectric characteristics of PZT thin films prepared by sol gel process with different sintering conditions and different Zr/Ti mot%. When the Zr mot% of PZT thin film was increased, it was found that the remanent. polarization and coercive field were decreased and increased, respectively. Also, the maxium dielectric constant of PZT(50/50) thin film was 786.8. We got double hysteresis(anti-fcrroelectric) curve from PbZrO$_{3}$ thin film. As heating rate goes up, pyrochlore phase of PZT thin film was decreased and dielectric and ferroelectric characteristics were improved. As a result of variation of sintering temperature and time 500.deg. C-800.deg. C and 5 sec.-8 hours, respectively, we got optimal sintering temperature and time. The optimium sintering temperature and time of conventional furnace method and rapid thermal processing method were 650.deg. C-700.deg. C for 30-60 minutes and 700.deg. C/20 seconds-2 minutes, respectively.