• Structural Engineering and Mechanics
• /
• v.5 no.5
• /
• pp.587-598
• /
• 1997

A numerical model for masonry is proposed by following an internal variable approach originally developed in the field of elastic-plastic analysis. The general features of the theoretical framework are discussed by focussing on finite element models applicable to incremental elastic-plastic problems. An extremum property is derived and its implications in terms of convergence for convenient algorithms are briefly discussed, by including the case of softening materials and damage effects. Next, a numerical model is presented, which is suitable for masonry, can be developed according to the same internal variable formulation and enjoys similar properties. Some numerical results are presented and compared with the response of a masonry shear wall subjected to pseudodynamic tests.

• Journal of Advanced Navigation Technology
• /
• v.18 no.2
• /
• pp.170-177
• /
• 2014

Genetic Algorithms are robust search and optimization techniques but have some problems such as premature convergence and convergence to local extremum. As population diversity converges to low value, the search ability decreases and converges to local extremum but population diversity converges to high value, then the search ability increases and converges to global optimum or genetic algorithm may diverge. To guarantee that genetic algorithms converge to the global optima, the genetic operators should be chosen properly. In this paper, we propose the genetic operators with the hybrid function of the average Hamming distance and the fitness value to maintain the diversity of the GA's population for escaping from the premature convergence. Results of simulation studies verified the effects of the mutation operator for maintaining diversity and the other operators for improving convergence properties as well as the feasibility of using proposed genetic operators on convergence properties to avoid premature convergence and convergence to local extremum.

• Journal of Institute of Control, Robotics and Systems
• /
• v.17 no.12
• /
• pp.1210-1218
• /
• 2011

GA (Genetic Algorithms) are efficient for searching for global optima but may have some problems such as premature convergence, convergence to local extremum and divergence. These phenomena are related to the evolutionary operators. As population diversity converges to low value, the search ability of a GA decreases and premature convergence or converging to local extremum may occur but population diversity converges to high value, then genetic algorithm may diverge. To guarantee that genetic algorithms converge to the global optima, the genetic operators should be chosen properly. In this paper, we analyze the effects of the selection operator, crossover operator, and mutation operator on convergence properties, and propose the sweeping method of mutation probability and elitist propagation rate to maintain the diversity of the GA's population for getting out of the premature convergence. Results of simulation studies verify the feasibility of using these sweeping operators to avoid premature convergence and convergence to local extrema.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2013.05a
• /
• pp.97-97
• /
• 2013

We present a comprehensive study on the integration of h-BN with silicon MOSFET. Temperature dependent mobility modeling is used to discern the effects of top-gate dielectric on carrier transport and identify limiting factors of the system. The result indicates that coulomb scattering and surface roughness scattering are the dominant scattering mechanisms for silicon MOSFETs at relatively low temperature. Interposing a layer of h-BN between $SiO_2$ and Si effectively weakens coulomb scattering by separating carriers in the silicon inversion layer from the charged centers as 2-dimensional h-BN is relatively inert and is expected to be free of dangling bonds or surface charge traps owing to the strong, in-plane, ionic bonding of the planar hexagonal lattice structure, thus leading to a significant improvement in mobility relative to undecorated system. Furthermore, the atomically planar surface of h-BN also suppresses surface roughness scattering in this Si MOSFET system, resulting in a monotonously increasing mobility curve along with gate voltage, which is different from the traditional one with a extremum in a certain voltage. Alternatively, high-k dielectrics can lead to enhanced transport properties through dielectric screening. Modeling indicates that we can achieve even higher mobility by using h-BN decorated $HfO_2$ as gate dielectric in silicon MOSFETs instead of h-BN decorated $SiO_2$.

• Bulletin of the Korean Chemical Society
• /
• v.6 no.4
• /
• pp.186-191
• /
• 1985

The effect of pressure and temperature on the stabilities of the charge transfer complexes of hexamethyl benzene with iodine in n-hexane has been investigated by UV-spectrophotometric measurements. In this experiment the absorption spectra of mixed solutions of hexamethyl benzene and iodine in n-hexane were measured at 25, 40 and $60^{\circ}C$ under 1,200, 600, 1200 and 1600 bar. The equilibrium constant of the complex formation was increased with pressure while being decreased with temperature raising. Changes of volume, enthalpy, free energy and entropy for the formation of the complexes were obtained from the equilibrium constants. The red shift at higher pressure, the blue shift at higher temperature and the relation between pressure and oscillator strength were discussed by means of thermodynamic functions. In comparison with the results in the previous studies, it can be seen that the pressure dependence of oscillator strength has a extremum behavior in durene as the variation of ${\Delta}H$ or ${\Delta}S$ with the number of methyl groups of polymethyl benzene near atmospheric pressure in the previous study. The shift or deformation of the potential in the ground state and in the excited state of the complexes formed between polymethyl benzene and iodine was considered from the correlation between the differences of the electron transfer energies and the differences of free energies of the complex formation for the pressure variation.

• Bulletin of the Korean Mathematical Society
• /
• v.49 no.3
• /
• pp.465-479
• /
• 2012

For $0<p{\leq}{\infty}$ and a convex body $K$ in $\mathbb{R}^n$, Lutwak, Yang and Zhang defined the concept of dual $L_p$-centroid body ${\Gamma}_{-p}K$ and $L_p$-John ellipsoid $E_pK$. In this paper, we prove the following two results: (i) For any origin-symmetric convex body $K$, there exist an ellipsoid $E$ and a parallelotope $P$ such that for $1{\leq}p{\leq}2$ and $0<q{\leq}{\infty}$, $E_qE{\supseteq}{\Gamma}_{-p}K{\supseteq}(nc_{n-2,p})^{-\frac{1}{p}}E_qP$ and $V(E)=V(K)=V(P)$; For $2{\leq}p{\leq}{\infty}$ and $0<q{\leq}{\infty}$, $2^{-1}{\omega_n}^{\frac{1}{n}}E_qE{\subseteq}{\Gamma}_{-p}K{\subseteq}{2\omega_n}^{-\frac{1}{n}}(nc_{n-2,p})^{-\frac{1}{p}}E_qP$ and $V(E)=V(K)=V(P)$. (ii) For any convex body $K$ whose John point is at the origin, there exists a simplex $T$ such that for $1{\leq}p{\leq}{\infty}$ and $0<q{\leq}{\infty}$, ${\alpha}n(nc_{n-2,p})^{-\frac{1}{p}}E_qT{\supseteq}{\Gamma}_{-p}K{\supseteq}(nc_{n-2,p})^{-\frac{1}{p}}E_qT$ and $V(K)=V(T)$.