• 제목/요약/키워드: extremum properties

검색결과 6건 처리시간 0.016초

Structural dynamics: Convergence properties in the presence of damage and applications to masonry structures

  • Nappi, Alfonso;Facchin, Giovanni;Marcuzzi, Claudio
    • Structural Engineering and Mechanics
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    • 제5권5호
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    • pp.587-598
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    • 1997
  • A numerical model for masonry is proposed by following an internal variable approach originally developed in the field of elastic-plastic analysis. The general features of the theoretical framework are discussed by focussing on finite element models applicable to incremental elastic-plastic problems. An extremum property is derived and its implications in terms of convergence for convenient algorithms are briefly discussed, by including the case of softening materials and damage effects. Next, a numerical model is presented, which is suitable for masonry, can be developed according to the same internal variable formulation and enjoys similar properties. Some numerical results are presented and compared with the response of a masonry shear wall subjected to pseudodynamic tests.

조기수렴 저감을 위한 해밍거리와 적합도의 혼합 유전 연산자 (Hybrid Genetic Operators of Hamming Distance and Fitness for Reducing Premature Convergence)

  • 이홍규
    • 한국항행학회논문지
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    • 제18권2호
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    • pp.170-177
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    • 2014
  • 유전 알고리즘은 강인한 탐색과 최적화 기술이기는 하나 조기 수렴과 국부 최적해에 수렴하는 문제점들을 내포하고 있다. 모집단의 다양성이 작은 값으로 수렴할수록 탐색능력이 감소하고, 국부 최적해에 수렴하지만, 모집단의 다양성이 높은 값으로 수렴할수록 탐색능력이 증가하고 전역 최적해에 수렴할 수 있으나 유전 알고리즘은 발산할 수도 있다. 유전 알고리즘이 전역 최적해에 수렴하는 것을 보장하기 위해서는 유전 연산자가 적절하게 선정되어야 한다. 본 논문에서는 조기 수렴으로부터 벗어나기 위하여 모집단의 다양성을 유지하도록 평균해밍거리와 적합도 값을 혼합한 함수를 이용한 유전 연산자들을 제안하였다. 모의실험을 통하여 다양성의 유지를 위한 돌연변이 연산자와 수렴 특성의 향상을 위한 다른 유전자들의 효과를 확인할 수 있었으며, 본 논문에서 제안한 유전 연산자들이 조기 수렴이나 국부 최적해에 수렴하는 경우를 피하는데 유용한 방법임이 확인되었다.

유전 알고리즘의 조기수렴 저감을 위한 연산자 소인방법 연구 (On Sweeping Operators for Reducing Premature Convergence of Genetic Algorithms)

  • 이홍규
    • 제어로봇시스템학회논문지
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    • 제17권12호
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    • pp.1210-1218
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    • 2011
  • GA (Genetic Algorithms) are efficient for searching for global optima but may have some problems such as premature convergence, convergence to local extremum and divergence. These phenomena are related to the evolutionary operators. As population diversity converges to low value, the search ability of a GA decreases and premature convergence or converging to local extremum may occur but population diversity converges to high value, then genetic algorithm may diverge. To guarantee that genetic algorithms converge to the global optima, the genetic operators should be chosen properly. In this paper, we analyze the effects of the selection operator, crossover operator, and mutation operator on convergence properties, and propose the sweeping method of mutation probability and elitist propagation rate to maintain the diversity of the GA's population for getting out of the premature convergence. Results of simulation studies verify the feasibility of using these sweeping operators to avoid premature convergence and convergence to local extrema.

Improvement of carrier transport in silicon MOSFETs by using h-BN decorated dielectric

  • Liu, Xiaochi;Hwang, Euyheon;Yoo, Won Jong
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2013년도 춘계학술대회 논문집
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    • pp.97-97
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    • 2013
  • We present a comprehensive study on the integration of h-BN with silicon MOSFET. Temperature dependent mobility modeling is used to discern the effects of top-gate dielectric on carrier transport and identify limiting factors of the system. The result indicates that coulomb scattering and surface roughness scattering are the dominant scattering mechanisms for silicon MOSFETs at relatively low temperature. Interposing a layer of h-BN between $SiO_2$ and Si effectively weakens coulomb scattering by separating carriers in the silicon inversion layer from the charged centers as 2-dimensional h-BN is relatively inert and is expected to be free of dangling bonds or surface charge traps owing to the strong, in-plane, ionic bonding of the planar hexagonal lattice structure, thus leading to a significant improvement in mobility relative to undecorated system. Furthermore, the atomically planar surface of h-BN also suppresses surface roughness scattering in this Si MOSFET system, resulting in a monotonously increasing mobility curve along with gate voltage, which is different from the traditional one with a extremum in a certain voltage. Alternatively, high-k dielectrics can lead to enhanced transport properties through dielectric screening. Modeling indicates that we can achieve even higher mobility by using h-BN decorated $HfO_2$ as gate dielectric in silicon MOSFETs instead of h-BN decorated $SiO_2$.

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The Study on the Physicochemical Properties of Fluid under High Pressure (Ⅱ). The Effect of Pressure and Temperature on the Hexamethyl Benzene-Iodine Charge Transfer Complex in n-Hexane

  • 권오천;김정림
    • Bulletin of the Korean Chemical Society
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    • 제6권4호
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    • pp.186-191
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    • 1985
  • The effect of pressure and temperature on the stabilities of the charge transfer complexes of hexamethyl benzene with iodine in n-hexane has been investigated by UV-spectrophotometric measurements. In this experiment the absorption spectra of mixed solutions of hexamethyl benzene and iodine in n-hexane were measured at 25, 40 and $60^{\circ}C$ under 1,200, 600, 1200 and 1600 bar. The equilibrium constant of the complex formation was increased with pressure while being decreased with temperature raising. Changes of volume, enthalpy, free energy and entropy for the formation of the complexes were obtained from the equilibrium constants. The red shift at higher pressure, the blue shift at higher temperature and the relation between pressure and oscillator strength were discussed by means of thermodynamic functions. In comparison with the results in the previous studies, it can be seen that the pressure dependence of oscillator strength has a extremum behavior in durene as the variation of ${\Delta}H$ or ${\Delta}S$ with the number of methyl groups of polymethyl benzene near atmospheric pressure in the previous study. The shift or deformation of the potential in the ground state and in the excited state of the complexes formed between polymethyl benzene and iodine was considered from the correlation between the differences of the electron transfer energies and the differences of free energies of the complex formation for the pressure variation.

EXTREMUM PROPERTIES OF DUAL Lp-CENTROID BODY AND Lp-JOHN ELLIPSOID

  • Ma, Tong-Yi
    • 대한수학회보
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    • 제49권3호
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    • pp.465-479
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    • 2012
  • For $0<p{\leq}{\infty}$ and a convex body $K$ in $\mathbb{R}^n$, Lutwak, Yang and Zhang defined the concept of dual $L_p$-centroid body ${\Gamma}_{-p}K$ and $L_p$-John ellipsoid $E_pK$. In this paper, we prove the following two results: (i) For any origin-symmetric convex body $K$, there exist an ellipsoid $E$ and a parallelotope $P$ such that for $1{\leq}p{\leq}2$ and $0<q{\leq}{\infty}$, $E_qE{\supseteq}{\Gamma}_{-p}K{\supseteq}(nc_{n-2,p})^{-\frac{1}{p}}E_qP$ and $V(E)=V(K)=V(P)$; For $2{\leq}p{\leq}{\infty}$ and $0<q{\leq}{\infty}$, $2^{-1}{\omega_n}^{\frac{1}{n}}E_qE{\subseteq}{\Gamma}_{-p}K{\subseteq}{2\omega_n}^{-\frac{1}{n}}(nc_{n-2,p})^{-\frac{1}{p}}E_qP$ and $V(E)=V(K)=V(P)$. (ii) For any convex body $K$ whose John point is at the origin, there exists a simplex $T$ such that for $1{\leq}p{\leq}{\infty}$ and $0<q{\leq}{\infty}$, ${\alpha}n(nc_{n-2,p})^{-\frac{1}{p}}E_qT{\supseteq}{\Gamma}_{-p}K{\supseteq}(nc_{n-2,p})^{-\frac{1}{p}}E_qT$ and $V(K)=V(T)$.