• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
• /
• pp.518-518
• /
• 2013

자외선이 생체를 파괴하거나 탄생시킬 수 있는 중요한 요소라는 것은 잘 알려져있다. 이 때문에 생체 시료를 보통 자외선 파장대인 250~350 nm보다 짧은 10 nm 영역에 있는 극자외선에 노출되었을 때 그 상호작용 및 변화를 찾아서 분석하는 것을 목표로 삼는다. 먼저 이에 대한 기초내용으로, 앞으로 활용하게 될 플라즈마 집속장치에서의 전극형태에 따른 EUV 광원의 특성을 알아보는 실험을 진행하였다. 이 실험은 집속 플라즈마 발진장치의 2가지 전극인 마테르 (Mather) 형태의 전극과, 초사이클로이달 핀치(Hypercycloidal pinch) 핀치 형태의 전극에서 발진된 극자외선(Extreme Ultraviolet : EUV) 집속 플라즈마의 전자온도와, 전자밀도, power를 분석하였다. 그리고 EUV 광원 발생장치에 Ar 가스와, Ne-Xe 가스내 환경에서 2 종류의 전극에 의해 만들어진 고밀도 플라즈마로부터 발생된 EUV의 특성을 알아보았다.

• Journal of the Optical Society of Korea
• /
• 제17권1호
• /
• pp.38-43
• /
• 2013

In this study, we propose a simple and indirect method to determine the optical constants of Mo and ITO thin films in the extreme ultraviolet (EUV) wavelength region by using X-ray reflectometry (XRR) and Rutherford backscattering spectrometry (RBS). Mo and ITO films were deposited on silicon substrates by using an RF magnetron sputtering method. The density and the composition of the deposited films were evaluated from the XRR and RBS analysis, respectively and then the optical constants of the Mo and ITO films were determined by an indirect optical method. The results suggest that the indirect method by using the XRR and RBS analysis will be useful to search for suitable high absorbing EUVL mask material quickly.

• 반도체디스플레이기술학회지
• /
• 제15권1호
• /
• pp.22-26
• /
• 2016

Extreme ultraviolet (EUV) pellicle is one of the most concerned research in the field of EUV lithography (EUVL). Imaging performance of EUV mask with pellicle should be investigated prior to high volume manufacturing (HVM) of EUVL. In this paper, we analyzed the relationship between standoff distance and imaging performance of EUV mask to verify the influences of relative standoff distance on imaging performance. As a result, standoff distance of EUV pellicle has no effect on imaging performance of EUV mask such as critical dimension (CD), normalized image log slope (NILS) and image contrast. Therefore, pellicle support structure can be flexibly designed and modified in diverse ways to complement the thermal limitation of EUV pellicle membrane.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2008년도 제35회 하계학술대회 초록집
• /
• pp.295-295
• /
• 2008

• Journal of Astronomy and Space Sciences
• /
• 제18권2호
• /
• pp.145-152
• /
• 2001

태양의 극자외선 복사를 연구하기 위한 인공위성 탑재용 소형 극자외선 태양망원경의 공학 모형을 설계하였다. 극자외선 태양망원경은 $584.3AA$(He I)과 $629.7AA$(OV)의 두 파장대역에서 태양을 관측하기 위한 목적으로 설계되었다. 광학계는 Ritchey-Chr 샤두 방식이고, 망원경의 유효구경과 유효 초점 거리는 각각 80mm, 640mm이다. 회전 필터 휠을 사용하여 He I과 OV 방출선을 관측할 수 있도록 하였다. 검출기의 MCP (Microchannel Plate)는 채널 길이 대 직경의 비가 40:1인 Z-stack 타입이고, photocathode로서 KBr이 MCP 초점면에 코팅되며, MCP와 CCD는 fiber optic taper로 연결되도록 디자인하였다. 광학계 설계에 대한 분석은 광학계산용 상용 소프트웨어를 이용하였다.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
• /
• pp.1459-1460
• /
• 2006

A new gas jet Z-pinch EUV light source having double gas jet electrodes has been developed. It has two nozzles and two diffusers. The EUV beam is collected from the side of pinch plasma, generated in between the inner nozzle and corresponding diffuser. A cylindrical shell of He gas curtain produced by the outer nozzle is specially designed for shielding the debris and suppressing the inner gas expansion. We have succeeded in generating EUV energy of 1.22 mJ/sr/2%BW/pulse at 13.5nm. The estimated dimension of EUV source is to be FWHM diameter of 0.07 mm and length of 0.34 mm, and FW 1/e2 diameter of 0.15 mm and length of 1.2 mm.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2009년도 제38회 동계학술대회 초록집
• /
• pp.475-475
• /
• 2010

We have generated Ar plasma in dense plasma focus device with coaxial electrodes for extreme ultraviolet (EUV) lithography and investigated an emitted visible light for electro-optical plasma diagnostics. We have applied an input voltage 4.5 kV to the capacitor bank of 1.53 uF and the diode chamber has been filled with Ar gas of pressure 8 mTorr. The inner surface of the cylindrical cathode has been attatched by an acetal insulator. Also, the anode made of tin metal. If we assumed that the focused plasma regions satisfy the local thermodynamic equilibrium (LTE) conditions, the electron temperature and density of the coaxial plasma focus could be obtained by Stark broadening of optical emission spectroscopy (OES). The Lorentzian profile for emission lines of Ar I of 426.629 nm and Ar II of 487.99 nm were measured with a visible monochromator. And the electron density has been estimated by FWHM (Full Width Half Maximum) of its profile. To find the exact value of FWHM, we observed the instrument line broadening of the monochromator with a Hg-Ar reference lamp. The electron temperature has been calculated using the two relative electron density ratios of the Stark profiles. In case of electron density, it has been observed by the Stark broadening method. This experiment result shows the temporal behavior of the electron temperature and density characteristics for the focused plasma. The EUV emission signal whose wavelength is about 6 ~ 16 nm has been detected by using a photo-detector (AXUV-100 Zr/C, IRD). The result compared the electron temperature and density with the temporal EUV signal. The electron density and temperature were observed to be $10^{16}\;cm^{-3}$ and 20 ~ 30 eV, respectively.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2009년도 제37회 하계학술대회 초록집
• /
• pp.368-368
• /
• 2009

• 반도체디스플레이기술학회지
• /
• 제20권2호
• /
• pp.34-42
• /
• 2021

Recent cleaning technologies of mask in extremely ultraviolet semiconductor processes were reviewed, focused on newly developed issues such as particle size determination or hydrocarbon and tin contaminations. In detail, critical particle size was defined and proposed for mask cleaning where nanosized particles and its various shapes would result in surface atomic ratio increase vigorously. A new cleaning model also was proposed with amphoteric behavior of electrolytically ionized water which had already shown excellent particle removing efficiency. Having its non-equilibrium and amphoteric properties, electrolyzed ion water seemed to oxidize contaminant surface selectively in nano-scale and then to lift up oxidized ones from mask surface very effectively. This assumption should be further investigated in future in junction with hydrogen bonding and cluster of water molecules.

• 반도체디스플레이기술학회지
• /
• 제15권1호
• /
• pp.6-11
• /
• 2016

For high volume manufacturing using extreme ultraviolet (EUV) lithography, mask protection from contamination during lithography process must be solved, and EUV pellicle is the strongest solution. Based on the technical requirements of EUV pellicle, EUV pellicle should have large membrane area ($110{\times}140mm^2$) with film transmittance over 90% and mechanical stability. Even though pellicle that satisfies size standard with high transmittance has been reported, its mechanical stability has not been confirmed, nor is there a standard to evaluate the mechanical stability. In this study, we suggest a rather simple method evaluating mechanical stability of pellicle membrane using spin-coater which can emulate the linear accelerated motion. The test conditions were designed by simulating the acceleration distribution inside pellicle membrane through correlating the linear acceleration and centripetal acceleration, which occurs during linear movement and rotation movement, respectively. By these simulation results, we confirmed the possibility of using spin-coater to evaluate the mechanical stability of EUV pellicle.