• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.688-688
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• 2013

Al-doped ZnO (AZO) thin films have attracted a lot of attention as a cheap transparent conducting oxide (TCO) material that can replace the expensive Sn-doped In2O3. In particular, AZO thin films are widely used as a window layer of chalcogenide-based thin film solar cells such as Cu(In,Ga)Se2 and Cu2ZnSnS4 (CZTS). Mostly important requirements for the window layer material of the thin film solar cells are the high transparency and the low sheet resistance, because they influence the light absorption by the activelayer and the electron collection from the active layer, respectively. In this study, we prepared the AZO thin films by RF magnetron sputtering using a ZnO/Al2O3 (98：2wt%) ceramic target, and the effect of the sputtering condition such as the working pressure, RF power, and the working distance on the optical, electrical, and crystallographic properties of the AZO thin films was investigated. The AZO thin films with optimized properties were used as a window layer of CZTS thin film solar cells. The CZTS active layers were prepared by the electrochemical deposition and the subsequent sulfurization process, which is also one of the cost-effective synthetic approaches. In addition, the solar cell properties of the CZTS thin film solar cells, such as the photocurrent density-voltage (J-V) characteristics and the external quantum efficiency (EQE) were investigated.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.4
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• pp.379-385
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• 2006

A stacked white organic light-emitting diode (OLED) having a blue/orange emitting layer was fabricated by synthesizing nitro-DPVT, a new derivative of the blue-emitting material DPVBi on the market. The white-emission of the two-wavelength type was successfully obtained by using both nitro-DPVT for blue~emitting material, orange emission as a host material and Rubrene for orange emission as a guest material. The basic structure of the fabricated white OLED is glass/ITO/NPB$(200{\AA})$/nitro-DPVT$(100{\AA})$/nitro-DPVT:$Rubrene(100{\AA})/BCP(70{\AA})/Alq_3(150{\AA})/Al(600{\AA})$. To evaluate the. characteristics of the devices, firstly, we varied the doping concentrations of fluorescent dye Rubrene from 0.5 % to 0.8 % to 1.3 % to 1.5 % to 3.0 % by weight. A nearly pure white-emission was obtained in CIE coordinates of (0.3259, 0.3395) when the doping concentration of Rubrene was 1.3 % at an applied voltage of 18 V. Secondly, we varied the thickness of the NPB layer from $150{\AA}\;to\;200{\AA}\;to\;250{\AA}\;to\;300{\AA}$ by fixing doping with of Rubrene at 1.3 %. A nearly pure white-emission was also obtained in CIE coordinates of (0.3304, 0.3473) when the NPB layer was $250-{\AA}$ thick at an applied voltage of 16 V. The two devices started to operate at 4 V and to emit light at 4.5 V. The external quantum efficiency was above 0.4 % when almost all of the current was injected.

• Journal of Information Display
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• v.3 no.1
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• pp.6-10
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• 2002

We have synthesized a new green Ir(III) complex fac-tris-(3-methyl-2-phenyl pyridine)iridium(III) $Ir(mpp)_3$ and fabricated phosphorescent polymer light-emitting device using it as a triplet emissive dopant in PVK. $Ir(mpp)_3$ showed absorption centered at 388 nm corresponding to the $^1MLCT$ transition as .evidenced by its extinction coefficient of the order of $10^3{\cdot}$ From the PL and EL spectra of the $Ir(mpp)_3$ doped PVK film, the emission maximum was observed at 523 nm, due to the radiative decay from the $^3MLCT$ state to the ground state, confirming a complete energy transfer from PVK to $Ir(mpp)_3$. The methyl substitution has probably caused a red shift in the absorption and emission spectrum compared to $Ir(mpp)_3$. The device consisting of a 2 % doped PVK furnished 4.5 % external quantum efficiency at 72 $cd/m^2$ (current density of 0.45 $mA/cm^2$ and drive voltage of 13.9 V) and a peak luminance of 25,000 $cd/m^2$ at 23.4 V (494 $mA/cm^2$). This work demonstrates the impact of the presence of a methyl substituent at the 3-position of the pyridyl ring of 2-phenylpyridine on the photophysical and electroluminescence properties.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.48-48
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• 2011

We have developed a chemically-driven top-down approach using vapor phase HCl to form various GaN nanostructures and successfully demonstrated dislocation-free and strain-relaxed GaN nanostructures without etching damage formed by a selective dissociation method. Our approach overcomes many limitations encountered in previous approaches. There is no need to make a pattern, complicated process, and expensive equipment, but it produces a high-quality nanostructure over a large area at low cost. As far as we know, this is the first time that various types of high-quality GaN nanostructures, such as dot, cone, and rod, could be formed by a chemical method without the use of a mask or pattern, especially on the Ga-polar GaN. It is well known that the Ga-polar GaN is difficult to etch by the common chemical wet etching method because of the chemical stability of GaN. Our chemically driven GaN nanostructures show excellent structure and optical properties. The formed nanostructure had various facets depending on the etching conditions and showed a high crystal quality due to the removal of defects, such as dislocations. These structure properties derived excellent optical performance of the GaN nanostructure. The GaN nanostructure had increased internal and external quantum efficiency due to increased light extraction, reduced strain, and improved crystal quality. The chemically driven GaN nanostructure shows promise in applications such as efficient light-emitting diodes, field emitters, and sensors.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.382-382
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• 2011

보다 저렴한 다결정 실리콘 웨이퍼를 사용한 다결정 실리콘 태양전지의 발전효율개선을 위해서는 태양광스펙트럼의 표면 흡수기구를 최적화하고, 전자-정공쌍의 생성극대화 및 재결합 기구 제어를 통한 전하운바자들의 안정적인 분리와 전극으로의 효율적인 수집이 필수적인다. 현재 양질의 다결정 실리콘 웨이퍼에 기반한 다결정 실리콘 태양전지 양산공정에서 16~17% 발전효율이 이루어지고 있으며 18% 이상의 발전효율을 얻기 위해서는 보다 더 우수한 품질의 다결정 실리콘 웨이퍼가 요구된다. 본 연구에서는 15.5~16.5% 대역의 평균 발전효율을 갖는 15.6 cm${\times}$15.6 cm 크기 고효율 다결정 실리콘 태양전지 전면의 전자발광(EL : electroluminescence)데이터로부터 효율기여도가 높은 위치와 상대적으로 기여도가 낮은 위치들을 선정하여 380~1050nm 파장대역의 광선속에 대해 국부적인 외부양자효율(EQE : external quantum efficiency)을 측정하고 투과전자현미경(TEM : tunneling electron microscope) 등을 활용하여 결정방향 등에 기인하는 양자효율 악화기구를 분석하였다. 결론적으로 15%대의 상대적으로 낮은 발전효율을 보이는 태양전지들은 300~600 nm 단파장 영역에서 양자효율이 상대적으로 낮은 저급한 결정성의 웨이퍼에 기인하고 16.5%이상의 높은 발전효율을 갖는 태양전지들은 단파장영역에서 높은 양자효율을 갖는 영역이 수광면적의 80~90%를 차지하는 것으로 밝혀졌다. 이와 더불어 15%대의 발전효율을 갖는 태양전지에서는 600~1100 nm 파장대역에서 상대적으로 악화된 양자효율을 갖는 저급한 결정성 영역이 30~40%를 차지하였으나 16.5%대역의 고효율 태양전지에서는 저급한 결정성 영역이 5~10%를 차지하여 대조를 보였다. 따라서 18%이상의 높은 발전효율을 갖는 다결정 실리콘 태양전지의 양산을 위해서는 양자효율이 우수한 양품의 웨이퍼를 기반으로 표면 texturing을 통해 평균 태양광 흡수율을 90%이상으로 개선하고, 보다 미세한 프론트 전극패턴을 통해 수광면적을 개선하고 선택적인 에미티공정 기술 등을 적용할 필요가 있음을 제안하고자 한다.

• Polymer(Korea)
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• v.28 no.5
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• pp.367-373
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• 2004

Novel non-conjugated blue light-emitting copolymers containing perylene and triazine moieties as light emitting and electron transporting units, respectively in the polymer side chain were synthesized. The resulting copolymers were soluble in most organic solvents such as chlorobenzene, THF, chloroform and benzene. The single-layered electroluminescence (EL) device consisting of indium tin oxide (ITO) /copolymer/aluminium (Al) exhibited a maximum external quantum efficiency ($0.003\%$) and a good carrier balance when the triazine content was $30\%$. In particular, the device emitted blue light (479 nm) corresponding to the emission of perylene moiety. The drive voltage was observed at 5 V and the CIE coordinate was x=0.16, y=0.17.

• Current Applied Physics
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• v.18 no.12
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• pp.1496-1506
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• 2018

Organic/inorganic ultraviolet photodetector was fabricated using thermal evaporation technique. Organic/inorganic heterojunction based on thermally evaporated copper (II) acetylacetonate thin film of thickness 200 nm deposited on an n-type silicon substrate is introduced. I-V characteristics of the fabricated heterojunction were investigated under UV illumination of intensity $65mW/cm^2$. The diode parameters such as ideality factor, n, barrier height, ${\Phi}_B$, and reverse saturation current, $I_s$, were determined using thermionic emission theory. The series resistance of the fabricated diode was determined using modified Nord's method. The estimated values of series resistance and barrier height of the diode were about $0.33K{\Omega}$ and 0.72 eV, respectively. The fabricated photodetector exhibited a responsivity and specific detectivity about 9 mA/W and $4.6{\times}10^9$ Jones, respectively. The response behavior of the fabricated photodetector was analyzed through ON-OFF switching behavior. The estimated values of rise and fall time of the present architecture under UV illumination were about 199 ms and 154 ms, respectively. Finally, enhancing the photoresponsivity of the fabricated photodetector, post-deposition plasma treatment process was employed. A remarkable modification of the device performance was noticed as a result of plasma treatment. These modifications are representative in a decrease of series resistance and an increase of photoresponsivity and specific detectivity. The process of plasma treatment achieved an increment of external quantum efficiency from 5.53% to 8.34% at -3.5 V under UV illumination.

• Journal of IKEEE
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• v.26 no.2
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• pp.205-210
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• 2022

We demonstrated roll-to-roll microcontact printed (mCP) microlens array (MLA) to enhance the light extraction of organic light emitting diodes (OLEDs). The commercially provided microlens array is used as a template for polydimethylsiloxane (PDMS) roll stamp. The fluorinated film is formed on the PDMS roll stamp from fluorinated ink with low boiling point and printed onto the bottom side of the organic light emitting diode without high pressure and high thermal treatment. With optimized concentration of ink, the pattern which is almost identical to that of the template MLA was successfully printed. Due to the structure and low optical absorbance of microcontact printed MLA, the external quantum efficiency of OLED was improved by about 18%.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.2
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• pp.23-28
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• 2008

To improve the external quantum efficiency by means of the optimization of the polymer light emitting diodes(PLEDs) structure, the PLED with ITO/PEDOT:PSS/(PFO)/PFO:MEH-PPV/LiF/Al structure were fabricated and investigated the electrical and optical properties for the prepared devices. ITO(indium tin oxide) and PEDOT:PSS [poly (3,4-ethylenedioxythiophene): poly(styrene sulfolnate)] were used as transparent anode film and hole transport materials, respectively. PFO[poly(9,9-dioctylfluorene)] and MEHPPV[poly(2-methoxy-5(2-ethylhe xoxy)-1,4-phenylenevinyle)] were used as the light emitting host and dopant materials. The doping concentration of MEH-PPV was 9wt% with thickness of about $400{\AA}$. We investigated the dependence of the PFO thickness ranging from $200{\AA}$ to $300{\AA}$ on the electrical, optical properties of PLEDs. Among prepared PLED devices with different PFO thicknesses, the highest value of the luminance was obtained for the PLED device with $250{\AA}$ in thickness. As a result, the current density and luminance ware found to be about $400mA/cm^2$ and $1500cd/m^2$ at 13V, respectively. In addition, the luminance and current efficiency of PLED device with double emitting layer (PFO/PFO:MEH-PPV) were improved about 3 times compared with the one with single emitting layer (PFO:MEH-PPV).

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1520-1521
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• 2008

There are several ways to demonstrate white organic light emitting diodes (OLEDs) for displays and solid state lighting applications. Among these approaches are the stacked three primary or two complementary colors light-emitting layers, multiple-doped emissive layer, and excimer and exciplex emission [1-10]. We report on white phosphorescent excimer devices by using two light emitting materials based on platinum complexes. These devices showed a peak EQE of 15.7%, with an EQE of 14.5% (17 lm/W) at $500\;cd/m^2$, and a noticeable improvement in both the CIE coordinates (0.381, 0.401) and CRI (81). Devices with the structure ITO/PEDOT:PSS/TCTA (30 nm)/26 mCPy: 12% FPt (10 nm) /26 mCPy: 2% Pt-4 (15 nm)/BCP (40 nm)/CsF/Al [device 1], ITO/PEDOT:PSS/TCTA (30 nm)/26 mCPy: 2% Pt-4 (15 nm)/26 mCPy: 12% FPt (10 nm)/BCP (40 nm)/CsF/Al [device 2], and ITO/PEDOT:PSS/TCTA (30 nm)/26 mCPy: 2% Pt-4: 12% FPt (25 nm)/BCP (40 nm)/CsF/Al [device 3] were fabricated. In these cases, the emissive layer was either the double-layer of 26 mCPy:12% FPt and 15 nm 26 mCPy: 2% Pt-4, or the single layer of 26mCPy with simultaneous doping of Pt-4 and FPt. Device characterization indicates that the CIE coordinates/CRI of device 2 were (0.341, 0.394)/75, (0.295, 0.365)/70 at 5 V and 7 V, respectively. Significant change in EL spectra with the drive voltage was observed for device 2 indicating a shift in the carrier recombination zone, while relatively stable EL spectra was observed for device 1. This indicates a better charge trapping in Pt-4 doped layers [10]. On the other hand, device 3 having a single light-emitting layer (doped simultaneously) emitted a board spectrum combining emission from the Pt-4 monomer and FPt excimer. Moreover, excellent color stability independent of the drive voltage was observed in this case. The CIE coordinates/CRI at 4 V ($40\;cd/m^2$) and 7 V ($7100\;cd/m^2$) were (0.441, 0.421)/83 and (0.440, 0.427)/81, respectively. A balance in the EL spectra can be further obtained by lowering the doping ratio of FPt. In this regard, devices with FPt concentration of 8% (denoted as device 4) were fabricated and characterized. A shift in the CIE coordinates of device 4 from (0.441, 0.421) to (0.382, 0.401) was observed due to an increase in the emission intensity ratio of Pt-4 monomer to FPt excimer. It is worth noting that the CRI values remained above 80 for such device structure. Moreover, a noticeable stability in the EL spectra with respect to changing bias voltage was measured indicating a uniform region for exciton formation. A summary of device characteristics for all cases discussed above is shown in table 1. The forward light output in each case is approximately $500\;cd/m^2$. Other parameters listed are driving voltage (Bias), current density (J), external quantum efficiency (EQE), power efficiency (P.E.), luminous efficiency (cd/A), and CIE coordinates. To conclude, a highly efficient white phosphorescent excimer-based OLEDs made with two light-emitting platinum complexes and having a simple structure showed improved EL characteristics and color properties. The EQE of these devices at $500\;cd/m^2$ is 14.5% with a corresponding power efficiency of 17 lm/W, CIE coordinates of (0.382, 0.401), and CRI of 81.