• Title/Summary/Keyword: excess Pb

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Synthesis of $Pb(Mg_{1/3}Nb_{2/3})O_3$ powder by Solvent Evaporation and its Dielectric Property (용매 증발법에 의한 $Pb(Mg_{1/3}Nb_{2/3})O_3$ 분말 합성 및 유전 성질)

  • Lee, Jong-Pil;Lee, Jong-Kook;Kang, Sang-Gu;Kim, Hwan
    • Journal of the Korean Ceramic Society
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    • v.33 no.1
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    • pp.17-24
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    • 1996
  • Pb(Mg1/3Nb2/3)O3 powder with high purity chemical homogeniety and reactivity was prepared by solvent eva-poration of common solution. The common solution was fabricated using a Pb(NO3)2 Mg(NO)3 and NB solution which was prepared by dissolving NbC in H2O2 acquous solution. In precusor powder prepared by solvent evaporation method the synthetic temperature of Pb(Mg1/3 Nb2/3)O3 phase was lowered. And the formation of homogeneous Pb(Mg1/3Nb2/3)O3 phase was enhanced but the formation of pyrochlore phase was reduced. The dielectric constant of PMN ceramics from the synthesized powder was found to increase with both sintering temperature and excess MgO and subsequent analysis of the microstructures confirmed that this was due to an increase in grain size. The grain size dependence is explained as a consequence of low-permittivity grain boundaries.

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A study on the Etching and Dielectric Properties of PZT Thin Films with Excess Pb Contents (Pb 함량에 따른 PZT 박막의 식각 및 유전특성에 관한 연구)

  • Kim, Kyoung-Tae;Lee, Sung-Gap;Kim, Chang-Il;Lee, Young-Hie
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.04b
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    • pp.56-59
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    • 2000
  • In this study, Ferroelectric $Pb(Zr_x,Ti_{1-x})O_3$(x=0.53) thin films were fabricated by the spin-coating on the Pt/Ti/$SiO_2$/Si substrate using the PZT metal alkoxide solutions with various excess Pb contents. Etching of PZT film was performed using planar inductively coupled Ar(20)$/Cl_2/BCl_3$ plasma. The etch rate of PZT film was 2450 ${\AA}/min$ at Ar(20)$/BCl_3$(80) gas mixing ratio and substrate temperature of $80^{\circ}C$. The leakage current densities of before etching and after etching PZT thin film were $6.25\times10^{-8}A/cm^2$, $8.74\times10^{-7}A/cm^2$ with electric field of 0.07MV/em, respectively.

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Effect of heating Rate on the Microstructural Evolution during Sintering of PZT Ceramics (PZT 요업체의 소결과정 중 승온속도가 미세조직에 미치는 영향)

  • 박은태;김정주;조상희;김도연
    • Journal of the Korean Ceramic Society
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    • v.27 no.8
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    • pp.1020-1026
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    • 1990
  • The effect of heating rate on the microstructural evolution during sintering of PZT ceramics has been investigated. In case of PZT powder compacts containing excess of PbO, fast heating caused incomplete rearrangement of solid grains in a liquid, resulting in lower density and inhomogeneous pore shape ; on contrary, slow heating resulted in better densification. In contrast, in case of compacts without excess PbO, the densification was enhanced by fast heating due to suppression of the grain growth.

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Effect of Excess PbO and $In_2$$O_3$on the Phase Formation and Dielectric Properies of Pb(${In_{1/2}}{Nb{1/2}}$)$O_3$ (과량의 PbO 및 $In_2$$O_3$첨가가 PIN의 상합성 및 유전특성에 미치는 영향)

  • Lee, Kwang-Ho;Lee, Sang-Bop;Kim, Hwan
    • Journal of the Korean Ceramic Society
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    • v.38 no.4
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    • pp.393-399
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    • 2001
  • Pb(In$_{1}$2/Nb$_{1}$2/)O$_3$의 제조시 전구체로서 tetragonal pyrochlore(Pb$_3$Nb$_2$O$_{8}$)를 사용하였을 때, 페로브스카이트상의 상합성을 촉진시키고 유전특성을 향상시키기 위해 A(B$_1$,B$_2$) 구조에서 A자리에 해당하는 PbO와 B$_1$자리에 해당하는 In$_2$O$_3$를 각각 과량으로 첨가하여 900-110$0^{\circ}C$의 소결온도범위에서 상합성, 소결특성, 유전특성에 미치는 영향에 대해 고찰하였다. 과량으로 첨가된 PbO는 상합성 및 소결특성을 향상시킬 수 있어서 유전특성을 향상시킬 수 있었으나 과량으로 첨가된 In$_2$O$_3$에서는 그러한 결과를 얻을 수 없었다. 이러한 원인은 Pb$_3$Nb$_2$O$_{8}$을 전구체로 사용할 경우, PbO 공융액상이 페로브스카이트상 형성 직전까지 남아 있어서 활발한 PbO 휘발이 일어나는데, 과량으로 첨가된 PbO가 이를 효과적으로 보상하기 때문인 것으로 판단된다.

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Dielectric and Strain Properties of PMN-PT Ceramics Doped with $\textrm{SrTiO}^3$ and excess MgO ($\textrm{SrTiO}^3$ 와 과잉 MgO가 첨가된 $\textrm{Pb(Mg_{1/3}Nb_{2/3})O}_3$ - $\textrm{PbTiO}^3$ 계 세라믹스의 유전 및 변위 특성)

  • 이상훈
    • Journal of the Korean Institute of Telematics and Electronics T
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    • v.36T no.3
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    • pp.7-12
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    • 1999
  • In this paper, dielectric and strain properties of (1-f-y)PMN-yPT-xST ceramics investigated with the amount of $\textrm{SrTiO}^3$(ST). The $\textrm{SrTiO}^3$ content is ranged within 1~6㏖%. Another compositions with excess MgO also investigated. As the amount of ST is increased, dielectric constant has a maximum value at 5㏖% composition. The Curie temperature is decreased linearly with increasing the amount of ST. Coercive field and ramnant polarization has a maximum value at l㏖% composition. As for the effects of excess MgO, the dielectric constant has been increased by the addition of excess MgO up to 3㏖% to a 0.8PMN-0.12PT-0.04ST specimen. But the strain has been decreased by the addition of excess MgO.

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Effects of $PbTiO_3$ Addition on Dielectric Properties and Extent of PbO Loss in Nd-Doped $Pb(Mg^{1/3}Nb^{2/3})O_3$ System ($Nd^{3+}$로 치환된 $Pb(Mg^{1/3}Nb^{2/3})O_3$$PbTiO_3$ 첨가에 따른 유전특성과 PbO 휘발)

  • 김성열;이응상
    • Journal of the Korean Ceramic Society
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    • v.30 no.8
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    • pp.671-677
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    • 1993
  • Effects of PbTiO3 addition on dielectric properties and extent of PbO loss in Nd-doped Pb(Mg1/3Nb2/3)O3 system were investigated. As the proportion of dopping increased, the phase transition temperature shifted to low region, and the dielectric constant at room temperature decreased rapidly. But as the proportion of PbTiO3 increased, the phase transition temperature shifted to high retion, and the dielectric constant at room temperature increased. The substitution of Nd3+ for Pb2+ decreased the amount of PbO evaporation, therefore the sample sintered well in case of only 1 mole% adding excess PbO.

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Enhancement in Open-circuit Voltage of Methylammmonium Lead Halide Perovskite Solar Cells Via Non-stoichiometric Precursor (비화학양론적 전구체 조성 조절을 통한 페로브스카이트 태양전지의 개방전압 향상)

  • Yun, Hee-Sun;Jang, Yoon Hee;Lee, Doh-Kwon
    • Current Photovoltaic Research
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    • v.6 no.1
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    • pp.12-16
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    • 2018
  • The interest in perovskite solar cells has been skyrocketed owing to their rapid progress in efficiency in recent years. Here, we report the effect of non-stoichiometry in the methylammonium lead trihalide ($MAPbI_3$) precursors used in a solution process with different MAI : $PbI_2$ ratios of 1 : 0.96, 1 : 1.10, 1 : 1.15, and 1:1.20. With an increase in the $PbI_2$ content, the $PbI_2$ secondary phase was found to form at grain boundary region of perovskite thin films, as evidenced by X-ray diffraction (XRD) and scanning electron microscopy (SEM). In terms of device performance, open-circuit voltage in particular is significantly improved with increasing the molar ratio of $PbI_2$, which is possibly ascribed to the reduction in recombination sites at grain boundary of perovskite and hence the prolonged life time of light-generated carriers according to the reported. As a result, the $PbI_2-excess$ devices exhibited a higher power conversion efficiency compared to the MAI-excess ones.