• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1440-1442
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• 1996

The laser annealing effects on the TEOS (Tetra-Ethyl-Ortho-Silicate) oxide of MOS (Al/TEOS/n+ Silicon) structures was investigated with different initial oxide conditions, such as breakdown field. The breakdown field increased up to the 170 $mJ/cm^2$ with increasing laser energy density and decreased at 220 $mJ/cm^2$. It is considered that the increase of breakdown field is originated from the restore of strains which exist mainly at the metal/oxide interface.

• 한국안전학회지
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• 제12권4호
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• pp.79-85
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• 1997

In order to improve the surface characteristics of polymethylmethacrylate(PMMA), oxide thin film coatings were applied using the sol-gel dip-coating technique. The $Si(OC_2H_5)_4$, tetra-ethyl-ortho-silicate(TEOS) was used as a starting material for $SiO_2$ coating. The hardness of the alkoxy-derived oxide-coated PMMA was increased from 190 MPa for non-coated PMMA with increasing film thickness. By optimizing the heating conditions and the hydrolysis conditions, a maximum apparent hardness obtained In the present study was achieved 310 MPa using the withdrawal velocity of 5cm/min and heat treatment at $90^{\circ}C$ for 5 hours, which is about 1.6 times larger than that of uncoated PMMA.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.113-114
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• 2005

Sufficient removal rate with adequate selectivity to realize the pattern mask of tetra-ethyl ortho-silicate (TEOS) film for the vertical sidewall angle were obtained by chemical mechanical polishing (CMP) with commercial silica slurry as a function of pH variation. The changes of X-ray diffraction pattern and dielectric constant by CMP process were negligible.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.645-646
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• 2005

The increasing hydroxyl ($OH^-$) groups diffused into the TEOS and then weakened reactants such as H-C-O-Si bonds on the surface of TEOS film were actively generated with the increase of slurry temperature. These soft reactants on the surface of TEOS film could be removed easily by mechanical parts of CMP.

• Bulletin of the Korean Chemical Society
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• 제20권10호
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• pp.1145-1148
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• 1999

1H NMR spectra of methyl-, ethyl-, propyl-, isopropyl-, butyl-, N-methylethyl-, N-methylpropyl-, and N-methylisopropylamine coordinated to the paramagnetic 11-tungstocobalto(II)silicate anion (SiW11Co) in dimethylsulfoxide-d6 or dimethylformamide-d7 are reported. For these complexes the ligand exchange is slow on the NMR time scale and pure 1H NMR signals have been observed at room temperature. No complex is detected in D2O. From the pseudocontact shifts of the CH2 and CH3 groups in ethylamine the energy of the gauche conformers with respect to the anti conformer is estimated. Two diastereotopic protons in the CH2 group of N-methylethylamine have quite different chemical shifts especially at low temperatures (e.g. 48.5 vs. 19.4 ppm at -10℃). This may be attributed mainly to the different positions of the two protons in the most stable (gauche) conformer.

• 광물과 암석
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• 제35권1호
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• pp.51-64
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• 2022

포항 금광동층 함식물화석층 암석의 효과적인 보존을 위하여 구성암석의 특징과 보존처리제 적용을 인공풍화시험을 통해 살펴보았다. 화석지 구성암석은 규조토성 규질이암으로 팽윤성 광물인 스멕타이트를 약간 함유하고 있으며, 엽층리가 발달되어 있다. 화석지 암석은 물과 반응 후 팽윤성 광물의 d₀₀₁ 층간간격이 증가하였다. 에틸실리케이트 암석강화제를 적용한 후 시편의 경도는 향상되었으나 팽윤성 광물의 층간간격은 감소하였다. 팽윤저지제를 선처리한 후 강화제를 처리하였을 때 광물 층간간격의 변화는 강화제만을 처리하였을 때와 유사하여 팽윤저지제의 효과는 거의 없었다. 보존약품이 처리된 암석에 수분이 닿았을 경우, 강화제 또는 팽윤저지제를 선처리한 후 강화제를 처리한 암석 모두 엽층리 간격이 확대되었으나, 습기만 접했을 때는 변화가 적었다. 또한 보존처리 후 노천에 그대로 위치하여 풍화를 받게 되면, 약품이 처리되지 않은 암석에 비해 약간 느리게 발생하기는 하지만, 매우 빠른 시간 내에 엽층리면의 분리와 암석의 분말화가 발생하는 결과를 보였다. 화석지 암석의 원활한 보존을 위해서는 보존약품의 처리가 필요하나, 강우를 접하고 동결융해과정을 거치면 그 효과는 매우 빠른 시간에 소멸되기 때문에 약품처리에 상관없이 암석에 직접적인 강우의 접촉을 막는 것이 우선적으로 요구된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.545-545
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• 2008

Poly-Si is an essential material for floating gate in NAND Flash memory. To fabricate this material within region of floating gate, chemical mechanical polishing (CMP) is commonly used process for manufacturing NAND flash memory. We use colloidal silica abrasive with alkaline agent, polymeric additive and organic surfactant to obtain high Poly-Si to SiO2 film selectivity and reduce surface defect in Poly-Si CMP. We already studied about the effects of alkaline agent and polymeric additive. But the effect of organic surfactant in Poly-Si CMP is not clearly defined. So we will examine the function of organic surfactant in Poly-Si CMP with concentration separation test. We expect that surface roughness will be improved with the addition of organic surfactant as the case of wafering CMP. Poly-Si wafer are deposited by low pressure chemical vapor deposition (LPCVD) and oxide film are prepared by the method of plasma-enhanced tetra ethyl ortho silicate (PETEOS). The polishing test will be performed by a Strasbaugh 6EC polisher with an IC1000/Suba IV stacked pad and the pad will be conditioned by ex situ diamond disk. And the thickness difference of wafer between before and after polishing test will be measured by Ellipsometer and Nanospec. The roughness of Poly-Si film will be analyzed by atomic force microscope.

• 폴리머
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• 제29권1호
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• pp.102-105
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• 2005

다양한 치아 수복이 가능한 광중합형의 치아수복용 고분자 나노복합체(polymeric dental restorative nanocomposites, PDRNC)를 제조하고 이들의 심미적 물성을 고찰하였다. PDRNC 제조에 사용한 충전제는 평균 입경이 1${\mu}m$인 바륨실리케이트와 40 nm 및 7 nm 크기의 나노실리카를 혼성화시켜 사용하였는데 bisphenol A glycerolate methacrylate와 triethyleneglycol dimethacrylate (60/40 wt%)으로 구성되는 기재와의 혼화성 증가를 위해 실란으로 표면을 소수성으로 처리하였다. 가시광선을 이용한 PDRNC의 광중합에 필요한 광개시제는 camphorquinone을, 광증감제는 2-(dimethylamino)ethyl methacrylate을 사용하였다. 제조된 PDRNC의 심미적 물성을 Hunter L, a, b 값으로 평가한 결과, 7nm 크기의 나노 충전제가 첨가될수록 PDRNC의 투명성이 증가되어 심미적 특성이 향상됨을 알 수 있었다.

• 한국세라믹학회지
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• 제25권5호
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• pp.473-478
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• 1988

In order to obtain the high purity $\beta$-SiC powder that possesses the excellent sinterability and is close to the spherical shape, the carbon black was mixed into the composition of Si(OC2H5)4-H2O-NH3-C2H5OH which the monodispersed spherical fine particles is formed the hydrolysis of Ethylsilicate and the mixture was carbonized under an argon atmosphere. Particle shpae, size and the yield of $\beta$-SiC powder were investigated according to the molar ratio of carbon/alkoxide and variations of reaction temperature and reaction time. The results of this study are as follow ; 1) The yield of $\beta$-SiC gained from the reaction for one hour at 150$0^{\circ}C$ almost got near 100% and the particle size of $\beta$-SiC from the reaction for 15 hrs at 150$0^{\circ}C$ was 0.2${\mu}{\textrm}{m}$ on the average and close to the spherical shape agglomerate state. 2) When the molar ratio carbon/alkoxide is over 3.1 and the reaction occurs at 145$0^{\circ}C$ for 5hrs, the carbon content has not an effect on the kind of crystal of product.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.63-63
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• 2003

The nanotopography of silicon wafers has emerged as an important factor in the STI process since it affects the post-CMP thickness deviation (OTD) of dielectric films. Ceria slurry with surfactant is widely applied to STI-CMP as it offers high oxide-to-nitride removal selectivity. Aiming to control the nanotopography impact through ceria slurry characteristics, we examhed the effect of surfactant concentration and abrasive size on the nanotopography impact. The ceria slurries for this study were produced with cerium carbonate as the starting material. Four kinds of slurry with different size of abrasives were prepared through a mechanical treatment The averaged abrasive size for each slurry varied from 70 nm to 290 nm. An anionic organic surfactant was added with the concentration from 0 to 0.8 wt %. We prepared commercial 8 inch silicon wafers. Oxide Shu were deposited using the plasma-enhanced tetra-ethyl-ortho-silicate (PETEOS) method, The films on wafers were polished on a Strasbaugh 6EC. Film thickness before and after CMP was measured with a spectroscopic ellipsometer, ES4G (SOPRA). The nanotopogrphy height of the wafer was measured with an optical interferometer, NanoMapper (ADE Phase Shift)