• Clean Technology
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• v.23 no.2
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• pp.158-162
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• 2017

$FeCl_3$ solution has been used as an etchant for metal etching such as Fe, Cu, Al and Ni. In the etching process, $Fe^{3+}$ is reduced to $Fe^{2+}$ and the etching efficiency is decreased. Waste $FeCl_3$ etchant has environmental, economic problems and thus the regeneration of the etching solution has been required. In this study, HCl was mixed with the $FeCl_2$ solution and then, $H_2O_2$, $NaClO_3$ were added into the mixed solution to oxidize the $Fe^{2+}$. During the oxidation process, oxidation-reduction potential (ORP) was measured and the relationship between ORP and oxidation ratio was investigated. The ORP is increased with increasing the concentration of $H_2O_2$ and $NaClO_3$, and then the ORP is decreased with oxidation progress. Such a behavior was in good agreement with Nernst's equation. Also, the oxidation efficiency was about 99% when a sufficient amount of HCl and $H_2O_2$, $NaClO_3$ were added.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.338-339
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• 2005

The wider surface of the aluminum foil, electrochemically very important and it is necessary to increase the surface area. A study has been made of the fabrication condition for etching cube texture of high purity aluminium foil and of electrochemical etching of the aluminium foil. In the present work, it is shown there exists a relation between the influence of the pre-treatment time in the NaOH & HCI solution and $H_2SO_4$ concentration in the conversion solution. Also effect of temperature during AC etching was also studied. Result of the etched aluminum film is shown in the typical SEM images. Its electrochemical characteristics were investigated by cyclic voltammetry. And effects of current density and frequency is also reported. Cyclic voltammogram showed that the protective oxide film was formedon the inner surfaces of etch pit. the frequency influence resistance of oxide film in AC etching.

• Journal of the Korean institute of surface engineering
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• v.49 no.3
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• pp.231-237
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• 2016

This article reports a new chemical bath for preparing a mirror-like surface of AZ31 Mg alloy. In order to find an appropriate chemical polishing solution, four different acidic solutions of sulphuric acid, nitric acid, acetic acid and a specially designed mixture of nitric acid and acetic acid were investigated in view of the changes in surface appearance, roughness and dissolution rate of AZ31 Mg alloy. The surface scales on AZ31 Mg alloy were readily removed by all the acidic solutions, but a reflective surface was produced only by etching in the specially designed solution, and only after a specific etching time. The surface roughness increased with etching time in sulphuric acid, nitric acid, and acetic acid, but it lowered after a specific etching time in the specially designed mixture of nitric acid and acetic acid. Dissolution rate of the alloy in the specially designed mixture of nitric acid and acetic acid appeared to be more than twice than that in separate nitric acid or acetic acid. In this work, we recommend the mirror-like surface of AZ31 Mg alloy obtained by polishing for an optimum time in a mixture of nitric acid and acetic acid for following surface finishings, chemical conversion coating, electroplating, electrophoretic painting and anodizing treatment.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.33-36
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• 2001

In this paper, we have studied the characteristics of wet etching using citric acid based wet etchant. We have used the citric acid / hydrogen peroxide solution, citric acid / hydrogen peroxide / D.I. water solution. From our experimental result, a volumetric 1：3 ratio of citric acid and hydrogen peroxide and 1 ： 3 ： 1 ratio of citric acid, hydrogen peroxide, and D.I. water is shown to be a better wet etchant of PHEMT's system.

• Journal of the Korean institute of surface engineering
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• v.25 no.3
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• pp.150-157
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• 1992

A recovery process of pure alumina powder from the wasted aluminum etching solution of electrolytic condenser works was studied. The possibility of this process was considered in the basis of thermodynamic data nad physico-chemical properties for the recovered materials were tested. In order to obtain pure alumina, Fe3+ and Cu2+ in the solution as impurities were solvent-extracted, respectively, and then, Al3+ was precipitated by changing the pH of the solution. As the results, more than 99.9% of Al3+ in the solution was recovered by the precipitation method. The weight of the precipitate was reduced to about 65 wt.% of the original one by calcination and the sizes of the recovered powders were in order of 3-5$\mu\textrm{m}$. The precipitates were transformed to $\alpha$-Al2O3 at the calcination temperature about 120$0^{\circ}C$.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.11
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• pp.1686-1690
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• 1989

Using the anisotropic etching characteristics of N2H4-H2O solutions, Si diaphragm was fabricated for the integrated sensors. The optimal composition and temperature of the etching solution in (100) Si etching process was established to be 50mol% N2H4 in H2O at 105\ulcorner\ulcorner for both higher etch rate (=2.6\ulcorner/min) and better surface quality of etched (100) planes. Based on the above optimal etching condition, the electrochemical etch-stop technique was employed to form n-type Si diaphragm having a thickness of 20\ulcorner and the thickness of diapragm could exactly be controlled to 20\ulcorner\ulcorner.

• Journal of the Korean Ceramic Society
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• v.39 no.2
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• pp.109-112
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• 2002

The structural and optical features of Porous Silicon(PS) were investigated; the porous silicon was prepared by electrochemical etching of silicon wafers in HF solution. The morphologies and Photoluminescece(PL) features of the PS were investigated in terms of etching time, current density and aging conditions. The average pore diameter and pore depth were determined by current density and etching time, respectively. As-prepared PS exhibited the maximum PL peak at the wavelength of ∼ 450 nm. The degree of deviation from as-prepared PS during aging treatment seemed to depend on the microstructure as well as morphology of the PS. It is found that etching current density played an important role on the microstructural features of the PS.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1997.10a
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• pp.935-938
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• 1997

Recently, the minimum line width shows a tendency to decrease and the multi-level increase in semiconductor. Therefore, a planarization technique is needed and chemical mechanical polishing(CMP) is considered as one of the most suitable process. CMP accomplishes a high polishing performance and a global planarization of high quality. But there are several defects in CMP such as micro-scratches, abrasive contaminations, and non-uniformity of polished wafer edges. Wet etching include of Spin-etching can improve he defects of CMP. It uses abrasive-free chemical solution instead of slurry. On this study, ILD(INterlayer-Dielectric) was removed by CMP and wet-etching methods in order to investigate the superiority of wet etching mechanism. In the thin film wafer, the results were evaluated at a viewpoint of material removal rate(MRR) and within wafer non-uniformity(WIWNU). And pattern step height was also compared for planarization characteristics of the patterned wafer.

• Journal of the Korean Vacuum Society
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• v.21 no.2
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• pp.99-105
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• 2012

We fabricated the textured silicon (Si) surface on Si substrates by the electrochemical etching using gold (Au) nanoparticle catalysts. The antireflective property of the fabricated Si nanostructures was improved. The Au nanoparticles of ~20-150 nm were formed by the rapid thermal annealing using thermally evaporated Au films on Si. In the chemical etching, the aqueous solution containing $H_2O_2$ and HF was used. In order to investigate the effect of electrochemical etching on the etching depth and reflectance characteristics, the sample was immersed in the aqueous etching solution for 1 min with and without applied cathodic voltages of -1 V and -2 V. As a result, the solar weighted reflectance, i.e., the averaged reflectance with considering solar spectrum (air mass 1.5), could be efficiently reduced for the electrochemically etched Si by applying the cathodic voltage of -2 V, which is expected to be useful for Si solar cell applications.

• 연구논문집
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• s.23
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• pp.29-43
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• 1993

Photoetching of AISI 304 stainless steel in ferric chloride solution has been studied. This paper investigated on the single side etching characteristics of 304 stainless steel, especially influence of etching temperature, spray pressure of ferric chloride etchant, and etching time with $50\mum$ and $75\mum$ line width photomask.