• Title/Summary/Keyword: etching solution.

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The Characteristics of Al Thin Films by Vacuum Evaporation for Bulb Reflector (전구 Reflector용 진공증착 Al박막의 특성)

  • 김동구;김경남;김석기;구경완;한상옥
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.05a
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    • pp.688-691
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    • 1999
  • Light was of electric lamp was reflected by bulb reflector. In order to improve the efficiency of the electric lamp. it is inevitable that lamp, it is inevitable that improve the reflectance of bulb reflector. Important factors that affect the reflectance of bulb reflector is working pressure, distance between evaporation source to substrate, the situation of surface of glass. etch rate of glass, etc. In this paper. confirmed the effect of etching, working pressure etc. , and its effect for the reflectance of bulb reflector. Especially, concentration of HF in the etching solution and etching time is to be importnace for characteristic of bulb reflector.

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Fabrication and Characteristics of InP-Waveguide (InP 광도파로의 식각 특성)

  • 박순룡;김진우;오범환;우덕하;김선호
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.824-827
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    • 2000
  • Fabrication of InP-based photonic devices by dry etch Process is important for clear formation of waveguide mesa structure. We have developed more efficient etch process of the inductively coupled plasma (ICP) with low damages and less polymeric deposits for the InP-based photonic devices than the reactive ion etching (RIE) technique. We report the tendency of etch rate variation by the process parameters of the RF power, pressure, gas flow rate, and the gas mixing ratio. The surface roughness of InP-based waveguide structure was more improved by the light wet etching in the mixed solution of H$_2$SO$_4$:H$_2$O (1:1)

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Design and Fabrication of Capacitive Pressure Sensor (용량형 압력센서의 설계 및 제작)

  • 이승준;김병태;권영수;정귀상
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.561-564
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    • 2000
  • Silicon capacitive pressure sensor has been fabricated by using electrochemical etching stop and silicon-to-glass electrostatic bonding technique. A diaphragm structure is designed to compensate the nonlinear response. A cavity is etched into the silicon to the depth of 2$\mu\textrm{m}$ by anisotropic etching in 20wt.% TMAH solution at 80$^{\circ}C$. A fabricated sensor showed 3.3 pF zero-pressure capacitance, 297 pp.m/mmHg sensitivity, and a 7.4 7%F.S. nonlinear response in a 0-1 kgf/cm$^2$pressure range.

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Metal assisted etching으로 나노 구조 형성에 따른 단결정 실리콘의 표면조직화

  • Jeong, Hyeon-Cheol;Baek, Yong-Gyun;Kim, Hyeong-Tae;Jang, Hyo-Sik
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.270-270
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    • 2010
  • 결정질 실리콘 태양전지는 표면반사에 의한 광 에너지 손실을 최소화 시키고자 식각을 통한 표면 조직화(texturing)가 이루어진다. 단결정 실리콘 웨이퍼의 경우 알칼리 용액(alkali solution)을 사용하여 이방성 식각(anisotropic etching)을 함으로써 표면에 피라미드를 형성하고 광 포획(light trapping) 효과에 의해 반사율을 줄이게 된다. 그러나 피라미드 형성을 통한 반사율 감소에는 한계를 가지고 있다. Metal assisted etching을 기반으로 한 새로운 형태의 텍스쳐링인 nano texturing은 피라미드가 이루어진 표면에 수많은 nm사이즈의 구조를 형성시킴으로써 표면에서의 반사율을 현저히 감소시킨다. 먼저 $AgNO_3$용액으로 웨이퍼 표면에 Ag입자를 코팅한 후, 그 웨이퍼를 다시 $HF/H_2O_2$ 용액으로 일정시간 동안 식각을 거치게 된다. 그로 인해 표면에는 수 nm 사이즈의 구조물들이 피라미드 위에 생성되고, $AgNO_3$의 농도 및 식각 시간에 따라 그 구조물의 크기 및 굵기가 달라진다. 결과적으로 평균 10%이상의 반사율을 보이던 기존 텍스쳐링 웨이퍼에서 3%이하의 낮은 반사율을 얻을 수 있었다. 또한 이런 nano texturing을 n-emitter 형성 공정 등에 따른 영향과 carrer lifetime에 대하여 연구하였다.

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The Length Control of Carbon Nanotube using Electrochemical Etching (전해에칭을 이용한 탄소나노튜브의 길이 제어)

  • 이준석;권순근;곽윤근;김수현
    • Journal of the Korean Society for Precision Engineering
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    • v.21 no.6
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    • pp.167-171
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    • 2004
  • In this paper, we proposed a new method to control the length of carbon nanotube using electrochemical etching. We made a nano probe that was composed of the tungsten tip and multi-wall carbon nanotube. The nano probe was placed on the nano stage and the carbon nanotube on the nano probe was etched in the electrolyte solution with the applied voltage. The overall procedures were done under optical microscope and can be monitored. We can obtain a nano probe with proper length through this procedure.

Enhanced Cathodoluminescence of KOH-treated InGaN/GaN LEDs with Deep Nano-Hole Arrays

  • Doan, Manh-Ha;Lee, Jaejin
    • Journal of the Optical Society of Korea
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    • v.18 no.3
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    • pp.283-287
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    • 2014
  • Square lattice nano-hole arrays with diameters and periodicities of 200 and 500 nm, respectively, are fabricated on InGaN/GaN blue light emitting diodes (LEDs) using electron-beam lithography and inductively coupled plasma reactive ion etching processes. Cathodoluminescence (CL) investigations show that light emission intensity from the LEDs with the nano-hole arrays is enhanced compared to that from the planar sample. The CL intensity enhancement factor decreases when the nano-holes penetrate into the multiple quantum wells (MQWs) due to the plasma-induced damage and the residues. Wet chemical treatment using KOH solution is found to be an effective method for light extraction from the nano-patterned LEDs, especially, when the nano-holes penetrate into the MQWs. About 4-fold CL intensity enhancement factor is achieved by the KOH treatments after the dry etching for the sample with a 250-nm deep nano-hole array.

A Study on The Effect of Dampening Conductivity in the Offset Printing Printability (오프셋인쇄 축임물의 전도도가 인쇄적성에 미치는 영향에 관한 연구)

  • Park, Chan-Woo;Lee, Jae-Soo
    • Journal of the Korean Graphic Arts Communication Society
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    • v.25 no.1
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    • pp.43-52
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    • 2007
  • Offset printing is one of the well known printing technique of lithographic process and consists of image area and 'non-image area on a flat image carrier. The surface tension of dampening water can be controlled by adding IPA after mixing of raw water and etching solution. The etching solution contains a surfactant for reducing surface energy, a clean agent for non-imaging area, wetting agent for protecting non-imaging area from oil components like ink and also an emulsifying agent for controlling emulsification. In this study, the present situation of dampening water maintenance has examined by collecting dampening water using at domestic companies. The pH related to dampening water, conductivity, contact angle, emulsification curve are measured to define the current situation of dampening water control of each companies and to analyze the relationship among measured properties. In the study most of companies among 16 printing companies tested controlling dampening water through pH value. However, the quality of printing has varied depending upon conductivity, contact angle, IPA content, and emulsification value. The control of dampening water should be carry at the state of the standard when adding proper ratio of etching solution. It would be more effective when pH or conductivity control carries out in parallel with controlling dampening water. Therefore the concept that pH5.5 is correct is based concept. Based on these initial tests it is defined that the standardization of dampening water control is required.

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Diamond Crystal Growth Behavior by Hot Filament Chemical Vapor Deposition According to Pretreatment Conditions

  • Song, Chang Weon;You, Mi Young;Lee, Damin;Mun, Hyoung Seok;Kim, Seohan;Song, Pung Keun
    • Journal of the Korean institute of surface engineering
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    • v.53 no.5
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    • pp.241-248
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    • 2020
  • The change of the deposition behavior of diamond through a pretreatment process of the base metal prior to diamond deposition using HFCVD was investigated. To improve the specific surface area of the base material, sanding was performed using sandblasting first, and chemical etching treatment was performed to further improve the uniform specific surface area. Chemical etching was performed by immersing the base material in HCl solutions with various etching time. Thereafter, seeding was performed by immersing the sanded and etched base material in a diamond seeding solution. Diamond deposition according to all pretreatment conditions was performed under the same conditions. Methane was used as the carbon source and hydrogen was used as the reaction gas. The most optimal conditions were found by analyzing the improvement of the specific surface area and uniformity, and the optimal diamond seeding solution concentration and immersion time were also obtained for the diamond particle seeding method. As a result, the sandblasted base material was immersed in 20% HCl for 60 minutes at 100 ℃ and chemically etched, and then immersed in a diamond seeding solution of 5 g/L and seeded using ultrasonic waves for 30 minutes. It was possible to obtain optimized economical diamond film growth rates.

Recovery of Iron-Nickel Alloy Etching Waste Solution in Pilot Scale (파일럿 규모에서 철-니켈 합금 에칭폐액 재생)

  • Chae, Byungman;Kim, Dae-Weon;Hwang, Sung-Ok;Kim, Deukhyeon;Lee, Sangwoo
    • Clean Technology
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    • v.23 no.4
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    • pp.393-400
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    • 2017
  • In this study, we have developed a process for separating and recovering Ni and Fe in solution through a new solvent instead of TBP and Alamine336, which are solvents used in the conventional solvent extraction method. Experimental conditions were optimized through lab test and a $10L\;h^{-1}$ pilot plant was constructed for commercialization. In addition, the process data for mass production were obtained through pilot experiment and it was confirmed that there is no problem in product quality that can be used through the corrosion test of ferric chloride.

THE EFFECT OF WASHING PHOSPHORIC ACID ETCHANT ON SHEAR BOND STRENGTH OF AN ORTHODONTIC ADHESIVE (인산 부식액의 수세가 교정용 접착레진의 전단결합강도에 미치는 영향)

  • Kim, Hee-Kyun;Lee, Ki-Soo;Park, Young-Guk
    • The korean journal of orthodontics
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    • v.26 no.5 s.58
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    • pp.497-507
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    • 1996
  • The aim of present study in vitro was to evaluate and compare the effects of different washing times of enamels etched with low phosphoric acid solution which makes unsoluble salts and etched but contaminated with saliva on shear bond strength of an orthodontic adhesive to enamel, and to observe the washing effect on the etched enamel surface by scanning electron microscope. All brackets were bonded with Mono-$Lok2^{TM)}$) on the labial surface of extracted human bicuspids after etching with $20w/w\%\;and\;37w/w$ and phosphoric acid solution for 60seconds and then washing for 0,5,10 and 20seconds respectedly. After etching with $37w/w\%$ phosphoric acid solution and contaminating with saliva for 30seconds and then washing for 0,5,20 and 30seconds and re-etching for 10seconds. After 24hours passed in the $37^{\circ}C$ water bath, the shear bond strengths were measured on Universal Test Machine. The data were evaluated and tested by ANOVA and Duncan's multiple range test, and those results were as follows. 1. There was no significant differences between (p>0.05) shear bond strength of bonded brackets with 5, 10, 20seconds washing etched enamel using $37{\%}w/w{\%}$ phosphoric acid solution. 2. The shear bond strength of bonded brackets with $20w/w\%$ phosphoric acid and then washing for 5seconds showed bonded strength durable to occlusal force but its coefficiency score was high and etched surface was not cleaned completely and therefore it was assumed that its clinical application is not applicable. 3. There was no significant differences between (p>0.05) shear bond strengths of bonded brckets with washing for 5seconds etched enamel using $37w/w\%$ phosphoric acid solution and 10,20 seconds washing etched enamel using $20w/w\%$ phosphoric acid solution. 4. The shear bond strength of washing for 5seconds etched enamel which was contaminated with saliva showed sufficient bonded strength durable to occlusal force but its coefficiency score was high and therefore its clinical application was not applicable. 5. After etching, the sample contaminated with saliva showed the sufficient shear bond strength even washing 20seconds without re-etching.

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