한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

용량형 압력센서의 설계 및 제작

Design and Fabrication of Capacitive Pressure Sensor

  • 이승준 (동아대학교 전기공학과) ;
  • 김병태 (동서대학교 정보통신공학부) ;
  • 권영수 (동아대학교 전기공학과) ;
  • 정귀상 (동서대학교 정보통신공학부)
  • 발행 : 2000.07.01
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초록

Silicon capacitive pressure sensor has been fabricated by using electrochemical etching stop and silicon-to-glass electrostatic bonding technique. A diaphragm structure is designed to compensate the nonlinear response. A cavity is etched into the silicon to the depth of 2$\mu\textrm{m}$ by anisotropic etching in 20wt.% TMAH solution at 80$^{\circ}C$. A fabricated sensor showed 3.3 pF zero-pressure capacitance, 297 pp.m/mmHg sensitivity, and a 7.4 7%F.S. nonlinear response in a 0-1 kgf/cm$^2$pressure range.

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