• Title/Summary/Keyword: etching rate

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A Study on the Low-Temperature Plasma$(O_2)$ Etching of Poly (ethylene terephthalate) Fabrics (I) -Effects of Weight Loss and Bathochromicity- (PET 직물에 대한 저온 plasma$(O_2)$ Ethching에 관한 연구(I))

  • Cho, Hwan;Jeong, Hee-Cheon;Cho, In-Sul;Huh, Man-Woo;Chang, Du-Sang
    • Textile Coloration and Finishing
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    • v.2 no.3
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    • pp.8-13
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    • 1990
  • In order to study the modification of wettability, tactility, and bathochromicity of the poly (ethylene Terephthalate) (PET) fabrics, low-temperature plasma$(O_2)$ has been irradiated on the PET fabrics in various conditions. The results obtained from this study were as follows; 1) The weight loss rate of plasma-treated PET fabrics is proportional to irradiation time and internal gas temperature of treating chamber. Also, the effect of weight loss is remarkable at gas pressure ranging from 3 torr to 5 torr. 2) The bathochromic effect of PET fabrics treated with low-temperature plasma$(O_2)$ was improved.

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Noninvasive monitoring of ion energy distribution function and its application to semicounductor processing (비접촉식 이온에너지 분석장치와 반도체 장치에의 응용)

  • Lee, Sang-Won;Hong, Bo-Han;Heo, Seung-Hoe;Jeong, Jin-Uk
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2007.04a
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    • pp.9-10
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    • 2007
  • 본 논문에서는 비접촉식 이온에너지 해석 방법(Noninvasive Ion Energy Analysis, NIEA)을 이용하여 이온에너지 분포함수를 계산하고, 이 분포의 정보를 몇 가지 양으로써 특성지을 수 있는 모니터링 인자를 제안 하였다. 이온 에너지 분포에 영향을 미치는 외부 조건들인 rf 전력, 압력, 전극 간격을 변화시키며 해당 에너지 분포함수의 형태 변화 및 모니터링 인자들의 변화 양상을 관찰 하였다. NIEA 방법으로 측정한 이온 에너지와 공정과의 연관성을 알아보기 위해 poly silicon etching을 수행하며 이온 에너지 분포를 측정하였으며, 이온 에너지와 etch rate이 같은 경향을 나타내는 것을 확인 하였다.

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Electrochemical Anodic Formation of VO2 Nanotubes and Hydrogen Sorption Property

  • Lee, Hyeonkwon;Jung, Minji;Oh, Hyunchul;Lee, Kiyoung
    • Journal of Electrochemical Science and Technology
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    • v.12 no.2
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    • pp.212-216
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    • 2021
  • We investigated the feasibility of hydrogen storage with electrochemically formed VO2 nanotubes. The VO2 nanotubes were fabricated through the anodization of vanadium metal in fluoride ion-containing organic electrolyte followed by an annealing process in an Ar-saturated atmosphere at 673 K for 3 h at a heating rate of 3 K /min. During anodization, the current density significantly increased up to 7.93 mA/cm2 for approximately 500 s owing to heat generation, which led to a fast-electrochemical etching reaction of the outermost part of the nanotubes. By controlling the anodization temperature, highly ordered VO2 nanotubes were grown on the metal substrate without using any binders or adhesives. Furthermore, we demonstrated the hydrogen sorption properties of the anodic VO2 nanotubes.

Dry Etching of Flexible Polycarbonate and PMMA in O2/SF6/CH4 Discharges (O2/SF6/CH4 플라즈마를 이용한 플렉시블 Polycarbonate와 PMMA의 건식 식각)

  • Joo, Y.W.;Park, Y.H.;Noh, H.S.;Kim, J.K.;Lee, J.W.
    • Journal of the Korean Vacuum Society
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    • v.18 no.2
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    • pp.85-91
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    • 2009
  • There has been a rapid progress for flexible polymer-based MEMS(Microelectromechanical Systems) technology. Polycarbonate (PC) and Poly Methyl Methacrylate (PMMA), so-called acrylic, have many advantages for optical, non-toxic and micro-device application. We studied dry etching of PC and PMMA as a function of % gas ratio in the $O_2/SF_6/CH_4$ temary plasma. A photoresist pattern was defined on the polymer samples with a mask using a conventional lithography. Plasma etching was done at 100 W RIE chuck power and 10 sccm total gas flow rate. The etch rates of PMMA were typically 2 times higher than those of PC in the whole experimental range. The result would be related to higher melting point of PC compared to that of PMMA. The highest etch rates of PMMA and PC were found in the $O_2/SF_6$ discharges among $O_2/SF_6$, $O_2/CH_4$ and $SF_6/CH_4$ and $O_2/SF_6/CH_4$ plasma composition (PC: ${\sim}350\;nm/min$ at 5 sccm $O_2/5$ sccm $SF_6$, PMMA: ${\sim}570\;nm/min$ at 2.5 sccm $O_2/7.5$ sccm $SF_6$). PC has smoother surface morphology than PMMA after etching in the $O_2/SF_6/CH_4$ discharges. The surface roughness of PC was in the range of 1.9$\sim$3.88 nm. However, that of PMMA was 17.3$\sim$26.1 nm.

ORTHODONTIC BRACKET SHEAR BOND STRENGTH TO Nd:YAG LASER Er:YAG LASER IRRADIATED ENAMEL (Nd : YAG 및 Er : YAG 레이저로 치아표면 조사시 브라켓 전단접착강도에 관한 실험적 연구)

  • Choi, Seung-Hoon;Yang, Won-Sik
    • The korean journal of orthodontics
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    • v.27 no.1
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    • pp.141-155
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    • 1997
  • The purpose of this study was to evaluate the effectiveness of the Nd:YAG laser and the Er:YAAG laser on etching enamel for direct bonding of orthodontic bracket. The advantages of laser etching rather than conventional acid etching are to reduce the subsurface demineralization rate, to inhibit the spillage of acid onto uninvolved ""its of enamel, and to save the clinical manipulation time involving drying, trashing and drying again. 189 freshly extracted human premolars were prepared for this research. 165 out of them were divided into 11 groups of 15 teeth. One group was acid etching and the rest groups were irradiated with Nd:YAG laser by four different energy levels(100mj 10pps, 100mj 20pps, 150mj 20pps, 200mj 20pps) and with Er:YAG laser by six different energy levels(60mj 5pps, 60mj 10pps, 100mj 10pps. 200mj 10pps, 200mj l5pps, 400mj 10pps). Shear bond strength was tested with Instron after 24 hours, one week, and three weeks. Twenty-four out of 189 teeth were divided into twelve groups untreated control, acid etching, and ten laser irradiation subgroups. And the ultrastructural enamel surfaces of each group were observed with scanning electron microscope. The results were as follows; 1. The means and the standard deviations of shear bond strength of Nd:YAG and Er:YAU laser irradiation by different energy levels were obtained. 2. Shear bond strengths of Er:YAG laser irradiation groups were higher than those of Nd:YAG laser irradiation groups at the identical energy level. 3. Maximum bond strengths was achieved at the energy of I50mj, 20pps in Nd:YAG laser irradiation groups or 60mj, 10pps in Er:YAG laser irradiation groups. 4. It was acceptible for direct bonding to irradiate lb0mj 20pps with Nd:YAG laser or to irradiate 60mj 10pps with Er:YAG laser considering the results of shear bond strength tests and SEM obsesvation.

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Dry etching of polycarbonate using O2/SF6, O2/N2 and O2/CH4 plasmas (O2/SF6, O2/N2와 O2/CH4 플라즈마를 이용한 폴리카보네이트 건식 식각)

  • Joo, Y.W.;Park, Y.H.;Noh, H.S.;Kim, J.K.;Lee, S.H.;Cho, G.S.;Song, H.J.;Jeon, M.H.;Lee, J.W.
    • Journal of the Korean Vacuum Society
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    • v.17 no.1
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    • pp.16-22
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    • 2008
  • We studied plasma etching of polycarbonate in $O_2/SF_6$, $O_2/N_2$ and $O_2/CH_4$. A capacitively coupled plasma system was employed for the research. For patterning, we used a photolithography method with UV exposure after coating a photoresist on the polycarbonate. Main variables in the experiment were the mixing ratio of $O_2$ and other gases, and RF chuck power. Especially, we used only a mechanical pump for in order to operate the system. The chamber pressure was fixed at 100 mTorr. All of surface profilometry, atomic force microscopy and scanning electron microscopy were used for characterization of the etched polycarbonate samples. According to the results, $O_2/SF_6$ plasmas gave the higher etch rate of the polycarbonate than pure $O_2$ and $SF_6$ plasmas. For example, with maintaining 100W RF chuck power and 100 mTorr chamber pressure, 20 sccm $O_2$ plasma provided about $0.4{\mu}m$/min of polycarbonate etch rate and 20 sccm $SF_6$ produced only $0.2{\mu}m$/min. However, the mixed plasma of 60 % $O_2$ and 40 % $SF_6$ gas flow rate generated about $0.56{\mu}m$ with even low -DC bias induced compared to that of $O_2$. More addition of $SF_6$ to the mixture reduced etch of polycarbonate. The surface roughness of etched polycarbonate was roughed about 3 times worse measured by atomic force microscopy. However examination with scanning electron microscopy indicated that the surface was comparable to that of photoresist. Increase of RF chuck power raised -DC bias on the chuck and etch rate of polycarbonate almost linearly. The etch selectivity of polycarbonate to photoresist was about 1:1. The meaning of these results was that the simple capacitively coupled plasma system can be used to make a microstructure on polymer with $O_2/SF_6$ plasmas. This result can be applied to plasma processing of other polymers.

A Study on the Corrosion Susceptibility and Corrosion Fatigue Characteristics on the Material of Turbine Blade (Turbine Blade재료의 부식민감성과 부식피로특성에 관한 연구)

  • Jo, Seon-Yeong;Kim, Cheol-Han;Ryu, Seung-U;Kim, Hyo-Jin;Bae, Dong-Ho
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.24 no.3 s.174
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    • pp.603-612
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    • 2000
  • Corrosion characteristics on the 12Cr alloy steel of turbine blade was electro-chemically investigated in 3.5wt% NaCI and 12.7wt% Na2S04 solution, respectively. Electro-chemical polarization test, Huey test and Oxalic acid etching test were previously conducted to estimate corrosion susceptibility of the material. And, using the horizontal corrosion fatigue tester, corrosion fatigue characteristics of 12Cr alloy steel in distilled water, 3.5wt% NaCI solution, and 12.7wt%(1M) Na2S04 solution were also fracture-mechanically estimated and compared their results. Parameter considered was room temperature, 60'C and 90'C. Corrosion fatigue crack length was measured by DC potential difference method.Obtained results are as follows,1) 12Cr alloy steel showed high corrosion rate in 3.5wt% NaCI solution and Na2S04 solution at high tempratue.2) Intergranular corrosion sensitivity of 12 Cr alloy was smaller than austenitic stainless steel.3) Corrosion fatigue crack growth rate in 3.5wt% NaCI and 12.7wt%(IM) Na2S04 solution is entirely higher than in the distilled water, and also increased with the temperature increase.

Effect of DC Bias on the Growth of Nanocrystalline Diamond Films by Microwave Plasma CVD (마이크로웨이브 플라즈마 CVD에 의한 나노결정질 다이아몬드 박막 성장 시 DC 바이어스 효과)

  • Kim, In-Sup;Kang, Chan Hyoung
    • Journal of the Korean institute of surface engineering
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    • v.46 no.1
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    • pp.29-35
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    • 2013
  • The effect of DC bias on the growth of nanocrystalline diamond films on silicon substrate by microwave plasma chemical vapor deposition has been studied varying the substrate temperature (400, 500, 600, and $700^{\circ}C$), deposition time (0.5, 1, and 2h), and bias voltage (-50, -100, -150, and -200 V) at the microwave power of 1.2 kW, working pressure of 110 torr, and gas ratio of Ar/1%$CH_4$. In the case of low negative bias voltages (-50 and -100 V), the diamond particles were observed to grow to thin film slower than the case without bias. Applying the moderate DC bias is believed to induce the bombardment of energetic carbon and argon ions on the substrate to result in etching the surfaces of growing diamond particles or film. In the case of higher negative voltages (-150 and -200 V), the growth rate of diamond film increased with the increasing DC bias. Applying the higher DC bias increased the number of nucleation sites, and, subsequently, enhanced the film growth rate. Under the -150 V bias, the height (h) of diamond films exhibited an $h=k{\sqrt{t}}$ relationship with deposition time (t), where the growth rate constant (k) showed an Arrhenius relationship with the activation energy of 7.19 kcal/mol. The rate determining step is believed to be the surface diffusion of activated carbon species, but the more subtle theoretical treatment is required for the more precise interpretation.

Reduction of Tetrafluoromethane using a Waterjet Gliding Arc Plasma (워터젯 글라이딩 아크 플라즈마를 이용한 사불화탄소 저감)

  • Lee, Chae Hong;Chun, Young Nam
    • Korean Chemical Engineering Research
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    • v.49 no.4
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    • pp.485-490
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    • 2011
  • Tetrafluoromethane($CF_4$) has been used as etching and chamber cleaning gases for semiconductor manufacturing processes. These gases need to be removed efficiently because of their strong absorption of infrared radiation and long atmospheric lifetime which causes the global warming effect. We have developed a waterjet gliding arc plasma system in which plasma is combined with waterjet and investigated optimum operating conditions for efficient $CF_4$ destruction through enlarging discharge region and producing large amount of OH radicals. The operating conditions are waterjet flow rate, initial $CF_4$ concentration, total gas flow rate, specific energy input. Through the parametric studies, the highest $CF_4$ destruction of 97% was achieved at 2.2% $CF_4$, 7.2 kJ/L SEI, 9 L/min total gas flow rate and 25.5 mL/min waterjet flow rate.

Single Crystal Growth of $(TeO_2)$ by CZ Technique (용액인상법에 의한 파라텔루라이트 $(TeO_2)$ 단결정 육성)

  • Sohn, Wook;Jang, Young-Nam;Bae, In-Kook;Chae, Soo-Chun;Moon, H-Soo
    • Korean Journal of Crystallography
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    • v.6 no.2
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    • pp.141-157
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    • 1995
  • Single crystals of TeO2 with large diameter were grown by Czochralski technique with auto-diameter control system. The ratio of crystal to crucible was 60-70%. The effect of critical pulling and rotation rate on the crystal quality was studied. Optimum growth parameters for high quality crystal pulling rate was less than 1.2 mm/hr. The solid-liquid interface was convex at the rotation rate of 10-23 rpm and concave at the rotation rate of more than 25 rpm, depending on the size of crystal and crucible. The platinum concentration in the melts is one of the main factors of the constitutional supercooling and thus the bubble entrapment in the growing crystal. Growth axis was confirmed to {110} direction during the whole growth procedure. Infrared spectrometric study and dislocation density measurment by chemical etching method on the grown crystal were performed. Finally, the reasons of cooperation of striations, inclusions, and optical inhomogeneities were discussed.

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