• ETRI Journal
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• 제27권3호
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• pp.304-311
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• 2005

We report on the fabrication of an AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) using a dielectric-defined process. This process was utilized to fabricate $0.12\;{\mu}m\;{\times}\;100 {\mu}m$ T-gate PHEMTs. A two-step etch process was performed to define the gate footprint in the $SiN_x$. The $SiN_x$ was etched either by dry etching alone or using a combination of wet and dry etching. The gate recessing was done in three steps: a wet etching for removal of the damaged surface layer, a dry etching for the narrow recess, and wet etching. A structure for the top of the T-gate consisting of a wide head part and a narrow lower layer part has been employed, taking advantage of the large cross-sectional area of the gate and its mechanically stable structure. From s-parameter data of up to 50 GHz, an extrapolated cut-off frequency of as high as 104 GHz was obtained. When comparing sample C (combination of wet and dry etching for the $SiN_x$) with sample A (dry etching for the $SiN_x$), we observed an 62.5% increase of the cut-off frequency. This is believed to be due to considerable decreases of the gate-source and gate-drain capacitances. This improvement in RF performance can be understood in terms of the decrease in parasitic capacitances, which is due to the use of the dielectric and the gate recess etching method.

• Restorative Dentistry and Endodontics
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• 제27권4호
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• pp.363-369
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• 2002

최근에 많이 사용되어지고 있는 치과용 접착제는 산 부식 후 수분이 있는 상태에서 적용하는 wet-bonding 술식을 많이 추천하고 있다. 하지만 self-etching primer의 경우 산부식과 priming 과정이 동시에 시행되고, 제조자들은 건조된 치아표면에 적용할 것을 추천하고 있다. 그러나 건조된 정도에 대하여서는 별다른 추천사항이 없으며. 수분이 self-etching primer에 어떤 영향을 미치는지에 대하여서는 별다른 연구가 이루어져 있지 않은 상태이다. 이에 본 연구에서는 치질 삭제 후 남아있는 수분이 self-etching primer의 레진 접착 강도에 어떤 영향을 미치는 지를 알아보고자 하였다. 발거한 대구치 96개를 이용하여 물기가 있는 상태에서 #600 사포로 표면을 연마하고, 법랑질 면을 노출시킨 군과 상아질을 노출시킨 군으로 분류 후, 30분 공기 중 방치 군 (1군), 5초 공기 건조 군 (2군), 1초 공기 건조 군 (3군), 솜으로 약간의 물기를 제거한 군(blot dry) (4군) 등 총 8개의 군으로 나누었다. Self-etching adhesive system인 Clearfil SE Bond primer를 20초간 적용하고, bonding제 도포 후 10초간 광중합 시행하였다. 접착제 처리한 치아면에 몰드를 고정한 후 Clearfil AP-X 복합레진을 2mm 충전하고, 40초간 광중합을 시행하였다. 24시간 후 전단 응력 결합강도를 측정하였으며, 그 결과는 다음과 같이 나타났다. 법랑질과 상아질 모두에서, 30분 건조군과 5초 공기건조군이 1초와 blot drying 군보다 높은 결합강도를 보였으며 통계학적으로 유의한 차이를 보였다(p＜0.05). 본 실험 결과에 의하면 self-etching adhesive system을 사용함에 있어서 법랑질과 상아질군 공히 건조된 상태에서 사용하여야 하며 수분의 존재시 치아와의 결합력이 감소하는 것으로 나타났다. 따라서 임상에서 접착제의 적용시 수분의 조절에 주의하여야 할 것으로 사료된다.

• 한국재료학회지
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• 제22권9호
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• pp.482-488
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• 2012

To fabricate a precise micro metal mold, the electrochemical etching process has been researched. We investigated the electrochemical etching process numerically and experimentally to determine the etching tendency of the process, focusing on the current density, which is a major parameter of the process. The finite element method, a kind of numerical analysis, was used to determine the current density distribution on the workpiece. Stainless steel(SS304) substrate with various sized square and circular array patterns as an anode and copper(Cu) plate as a cathode were used for the electrochemical experiments. A mixture of $H_2SO_4$, $H_3PO_4$, and DIW was used as an electrolyte. In this paper, comparison of the results from the experiment and the numerical simulation is presented, including the current density distribution and line profile from the simulation, and the etching profile and surface morphology from the experiment. Etching profile and surface morphology were characterized using a 3D-profiler and FE-SEM measurement. From a comparison of the data, it was confirmed that the current density distribution and the line profile of the simulation were similar to the surface morphology and the etching profile of the experiment, respectively. The current density is more concentrated at the vertex of the square pattern and circumference of the circular pattern. And, the depth of the etched area is proportional to the current density.

• 대한치과보철학회지
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• 제30권1호
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• pp.73-83
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• 1992

Now composite resin restoration is clinically accepted in the repair of fractured PFM case, many mechanical surface treatment methods are performed to increase retentive force. The main purpose of this study was to compare the retentive force among the possible surface treatments and to insure the best method for the clinical application to the fractures porecelain and the exposed metal surface. To compare and to analyze the retentive force of repair resin, porcelain specimen were divided into 2 groups, etching group and non-etching group, and etching group were treated with 37% $H_3PO_4$, 1.23% APF, 10% HF and non-etching groups were treated with diamond bur, micro-sandblasasting. Also, metal specimens were divided by 2 groups : one was non-precious metal group which was treated with diamond bur, micro-sandblasting and tin plating and electrolytic etching, the other was precious metal group which was composed of micro-sandblasting treatment only and tin plating treatment with micro-sandblasting. Each specimen had been restored for 48 hours and the bond strength of each specimen was calculated with Universal testing machine. The results were as follows : 1. Porcelain specimen had higher bonding strength than metal specimen for the repair resin(P<0.01). 2. In porcelain specimen, 10% HF etching group had the highest bonding strength among etching and non-etching group. 3. Metal specimen treated with micro-sandblasting had highest bonding strength among the non-sandblasting had hightest bonding strength among the non-precious group, tin plating group had higher bonding strength than micro-sandblasting group between the precious metal groups. 4. Bonding strength of tin plating was increased in precious metal group only.

• 공업화학
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• 제20권5호
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• pp.557-560
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• 2009

본 연구에서는 글라스를 $100{\mu}m$ 이하의 두께로 박판화하기 위한 새로운 습식 에칭방법 및 에칭 용액을 검토하였다. $NH_4F$ 또는 $NH_4HF_2$를 주성분으로 황산 또는 질산을 첨가한 경우 에칭 용액의 불산 함유량을 저감하는 데에 효과가 있었다. 혼산 용액의 조성과 온도의 영향을 검토하였으며, 음이온계 계면활성제의 첨가는 에칭반응에 의해 생성되는 슬러지의 부착을 억제해주는 효과가 있었다. 수류 발생부를 가지는 새로운 파일럿 장비를 사용하여 상용 무알칼리 글라스와 소다라임 글라스의 에칭 실험을 실시하였다. $640{\mu}m$ 두께의 무알칼리 글라스를 $45{\mu}m$ 두께로 $500{\mu}m$ 두께의 소다라임 글라스를 $100{\mu}m$ 두께로 박판화하였으며, 에칭 후의 표면 조도는 $0.01{\sim}0.02{\mu}m$를 유지하였다.

• Restorative Dentistry and Endodontics
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• 제23권2호
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• pp.597-606
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• 1998

The purpose of this study was to evaluate the shear bond strength of the Compoglass Carvifil bonded on the dentin surface according to etching or non-etching and two time application or three time application of single component. Human non-carious 60 extracted 3rd molar were used. The occlusal dentin surfaces of all teeth were exposed with Diamond Wheel Saw and polished with Lapping & Polishing machine(South Bay Technology Co., U.S.A). The teeth were then distributed randomly into four groups of 15 teeth each and dentin surface were conditioned as following. Control group : Non-etching, two times application of Syntac Single Component. (According to manufacture's instruction) Experimental group 1 : Non-etching, three times application of Syntac Single Component. Experimental group : 2 Etching, two times application of Syntac Single Component. Experimental group 3 : Etching, three times application of Syntac Single Component. Compoglass were bonded to exposed dentin surfaces and all samples were placed in distilled water for 7 days. The shear bond strengths were measured by universal testing machine (SHIMADAZU AUTOGRAPH, AGS-4D., Japan). The results were as follows : 1. Experimental group 3 revealed the highest value (30.75${\pm}$4.74 MPa) and control group revealed the lowest value(14.85${\pm}$2.69 MPa). There was significant difference of shear bond strength among four groups(P<0.01) 2. The acid-etching groups (experimental group 2, 3) had higher shear bond strengths than non etching groups(control group and experimental group 1). 3. The additional application of Syntac single component groups revealed a higher bond strength than two times application groups (control group and experimental group 2).

• 한국표면공학회지
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• 제47권3호
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• pp.128-136
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• 2014

In the present study, we successfully developed an eco-friendly chemical etching solution and proper condition for plating on ABS material. The mechanism of forming Ni plating layer on ABS substrate is known as following. In general, the etching solution used for the etching process is a solution of chromic acid and sulfuric acid. The etching solution is given to the surface resulting in elution of butadiene group, so-called anchor effect. Such a rough surface can easily adsorb catalyst resulting in the increase of adhesion between ABS substrate and Ni plating layer. However a use of chromic acid is harmful to environment. It is, therefore, essential to develop a new alternative solution. In the present study, we proposed an eco-friendly etching solution composed of potassium permanganate, sulfuric acid and phosphoric acid. This solution was testified to observe the surface microstructure and the pore size of electrical Ni plating layer, and the adhesive correlation between deposited layers fabricated by electro Ni plating was confirmed. The result of the present study, the newly developed, eco-friendly etching solution, which is a mixture of potassium permanganate 25 g/L, sulfuric acid 650ml/L and phosphoric acid 250ml/L, has a similar etching effect and adhesion property, compared with the commercially used chromium acid solution in the condition at $70^{\circ}C$ for 5 min.

• 한국표면공학회지
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• 제48권6호
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• pp.360-370
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• 2015

As the size of the semiconductor devices shrinks to nanometer scale, the importance of plasma etching process to the fabrication of nanometer scale semiconductor devices is increasing further and further. But for the nanoscale devices, conventional plasma etching technique is extremely difficult to meet the requirement of the device fabrication, therefore, other etching techniques such as use of multi frequency plasma, source/bias/gas pulsing, etc. are investigated to meet the etching target. Until today, various pulsing techniques including pulsed plasma source and/or pulse-biased plasma etching have been tested on various materials. In this review, the experimental/theoretical studies of pulsed plasmas during the nanoscale plasma etching on etch profile, etch selectivity, uniformity, etc. have been summarized. Especially, the researches of pulsed plasma on the etching of silicon, $SiO_2$, and magnetic materials in the semiconductor industry for further device scaling have been discussed. Those results demonstrated the importance of pulse plasma on the pattern control for achieving the best performance. Although some of the pulsing mechanism is not well established, it is believed that this review will give a certain understanding on the pulsed plasma techniques.

• 한국전기전자재료학회논문지
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• 제21권2호
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• pp.111-117
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• 2008

We have studied surface roughness, contamination of impurity, bonding with some gas element, reflectance and zeta potential on masks to be generated or changed during photolithography/dry or wet etching process. Mask surface roughness was not changed after photolithography/dry etching process. But surface roughness was changed on some area under MoSi film of Cr/MoSi/Qz. There was not detected any impurity on mask surface after plasma dry etching process. Reflectance of mask was increased after variable plasma etching treatment, especially when mask was treated with plasma including $O_2$ gas. Blank mask was positively charged when the mask was treated with Cr plasma etching gas($Cl_2:250$ sccm/He:20 $sccm/O_2:29$ seem, source power:100 W/bias power:20 W, 300 sec). But this positive charge was changed to negative charge when the mask was treated with $CF_4$ gas for MoSi plasma etching, resulting better wet cleaning. There was appeared with negative charge on MoSi/Qz mask treated with Cr plasma etching process condition, and this mask was measured with more negative after SC-1 wet cleaning process, resulting better wet cleaning. This mask was charged with positive after treatment with $O_2$ plasma again, resulting bad wet cleaning condition.

• Transactions on Electrical and Electronic Materials
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• 제1권3호
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• pp.14-17
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• 2000

Giga bit dynamic random access memory(DRAM) requires the capacitor of high dielectric films. Some metal oxides films have been proposed as the dielectric material . And Pt is one of the most promising electrode materials. However very little has been done in developing the etching technologoy Pt film. Therefore, it is the first priority to develop the technology for plasma etching of Pt film. In this study, the dry etching of Pt film was investigated in Inductively Coupled Plasma(ICP) etching system with Cl$_2$/Ar and HBr/Cl$_2$/Ar gas mixing. X-ray photoelectron spectroscopy (XPS) was used in analysis of sidewall residues for the understanding of etching mechanism. We found the etch residues on the pattern sidewall is mainly Pt-Pt, Pt-Cl and Pt-Br compounds, Etch profile was observed by Scanning Electron Spectroscopy(SEM) . The etch rate of Pt film at 10%, Cl$_2$/90% Ar gas mixing ration was higher than at 100%. Ar. Addition of HBr to Cl$_2$/Ar as an etching gas led to generally higher selectivity to SiO$_2$. And the etch residues were reduced at 5% HBr/5% Cl$_2$/90% Ar gas mixing ration. These pages provide you with an examples of the layout and style which we wish you to adopt during the preparation of your paper, Make the width of abstract to be 14cm.