• Proceedings of the KACD Conference
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• 2003.11a
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• pp.625-625
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• 2003

I. Objectives Self-etching primer adhesive system is affected to dentin surface conditioning and priming. Especially application time of self-etching primer is very important factor of clinical procedure which has direct influence on smear layer, etching reaction and primer penetration to dentin. This study evaluated the influence of application time of self-etching primers on microtensile bond strength (${\mu}{\;}TBS$) to dentin using three self-etching primer adhesive systems.(omitted)

• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.410-415
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• 1999

The adhesion strength of sputtered copper films to Inconel substrates has been studied using the scratch test. The effects of substrate treatments before deposition such as chemical or ion bombardment etching were investigated by means of a mean critical load derived from a Weibull-like statistical analysis. It was found that the mean critical load was very weak unless the amorphous layer produced by mechanical polishing on the substrate surface was eliminated. Chemical etching in a nitric-hydrochloric acid bath was shown to have practically no effect on the enhancement of the adhesion. In contrast, the addition in this bath of nickel and copper sulphates allowed removal of the amorphous layer and an increase in the values of the mean critical load. However, it was observed that excessive chemical etching could cancel out the mean critical load enhancement. The results obtained in the case of ion bombardment etching pretreatments could be far higher than those obtained with chemical etching. Moreover, for a sufficiently long period of ion bombardment etching, the adhesion strength was so high that it was impossible to observe evidence of an adhesion failure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.187-190
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• 2004

In this study, PST thin films were etched with inductively coupled $Cl_2/(Cl_2+Ar)$ plasmas. The etch characteristics of PST thin films as a function of $Cl_2/(Cl_2+Ar)$ gasmixtures were analyzed by using quadrupole mass spectrometer (QMS). Systematic studies were carried out as a function of the etching parameters, including the RF power and the working pressure. The maximum PST film etch rate is 56.2 nm/min, because a small addition of $Cl_2$ to the $Cl_2/Ar$ mixture increased the chemical effect. It was proposed that sputter etching is the dominant etching mechanism while the contribution of chemical reaction is relatively low due to low volatility of etching products.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.726-729
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• 2004

Etching characteristics of (Pb,Sr)$TiO_3$(PST) thin films were investigated using inductively coupled chlorine based plasma system as functions of gas mixing ratio, RF power and DC bias voltage. It was found that increasing of hi content in gas mixture lead to sufficient increasing of etch rate and selectivity of PST to Pt. The maximum etch rate of PST film is $562{\AA}/min$ and the selectivity of PST film to Pt is 0.8 at $Cl_2/(Cl_2+Ar)$ of 20 %. It was Proposed that sputter etching is dominant etching mechanism while the contribution of chemical reaction is relatively low due to low volatility of etching products.

• Journal of Integrative Natural Science
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• v.5 no.1
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• pp.13-17
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• 2012

Changes of Fabry-Perot fringe patterns in porous silicon during etching process has been investigated. Four porous silicon samples were prepared with four different etch currents: (a) 10 $mA/cm^2$, (b) 30 $mA/cm^2$, (c) 50 $mA/cm^2$, (d) 100 $mA/cm^2$, respectively. Optical characterization of Fabry-Perot fringe pattern on porous silicon was achieved by Ocean optics 2000 spectrometer. The change of Fabry-Perot fringes was monitored and measured during the etching process. Fabry-Perot fringes pattern start to form after couple of minutes. As the etching time increased, more reflection peaks were observed. Its full width at half maximum (FWHM) decreased rapidly when the etching time increased.

• Journal of IKEEE
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• v.13 no.4
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• pp.23-27
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• 2009

Ohmic contact formation and etching processes for the fabrication of MBE (molecular beam epitaxy) grown GaSb-based p-channel HEMT devices on Si substrate have been studied. Firstly, mesa etching process was established for device isolation, based on both HF-based wet etching and ICP-based dry etching. Ohmic contact process for the source and drain formation was also studied based on Ge/Au/Ni/Au metal stack, which resulted in a contact resistance as low as $0.683\;{\Omega}mm$ with RTA at $320^{\circ}C$ for 60s. Finally, for gate formation of HEMT device, gate recess process was studied based on AZ300 developer and citric acid-based wet etching, in which the latter turned out to have high etching selectivity between GaSb and AlGaSb layers that were used as the cap and the barrier of the device, respectively.

• The Journal of Korean Academy of Prosthodontics
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• v.39 no.2
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• pp.184-196
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• 2001

The objective of this study was to investigate the influence of resin cements and ceramic etching on shear bond strength of Empress 2 ceramic and observe the change of microstructure of ceramic according to etching time. Sixty-six square ceramic specimens($6{\times}6{\times}1.5mm$) were prepared. 6 specimens were etched with different etching times(0, 10, 20, 30, 40 and 60 seconds) and observed by means of a scanning electron microscope(SEM). Other sixty specimens were divided into 6 groups with 10 specimens in each group. 3 groups were etched with 4% hydrofluoric acid and each groups was bonded with 3 resin cements(Variolink II, Super-Bond C&B, Panavia F). Each specimen was subjected to a shear load in an Instron at a cross-head speed of 0.5mm/min and was observed with SEM after mechanical testing to establish modes of failure. The results were as follows : 1. Within etched groups, Variolink II and Super-Bond C&B exhibited significantly greater bonding strengths than Panavia F(p<0.05) 2. Bond strength of etching groups had three to five times greater than that of no-etching groups. 3. All of no-etching groups showed adhesive failure and etching groups mostly showed mixed failure. And, 20-second etching specimen showed the most distinct lithium disilicate crystal. so it is considered that 20-second etching is optimal time for bonding.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.25 no.12
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• pp.1911-1918
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• 2001

Recently the non-destructive test technique which uses the grain boundary etching characteristics owing to the variation of material structures has been proposed. However, during in-serviced GEM test there are a lot of variables such as the changes of temperature and concentration of etching solution, the roughness condition of surface polished etc.. The purpose of this paper is to investigate the influences of these test variables on GEM test results in order to establish a reliable and sensitive of GEM evaluation technique. The experiments are conducted in various solution temperatures, 10$\^{C}$, 15$\^{C}$, 20$\^{C}$, and 25$\^{C}$ and in 70% and 100% concentrations of that, and in various surface roughnesses polished by #800, #2000, and 0.3㎛ alumina powder. Through the test with variables, it is verified that the decrease of temperature and concentration of etching solution and the coarsened surface roughness by not using polishing cloth and powder induce some badly and/or greatly influences on GEM test results like grain boundary etching width(W$\_$GB) and intersecting point ratio(N$\_$i/N$\_$0/). Therefore, to get reliable and good GEM test results, it must be prepared the surface of specimen polished by polishing cloth and 0.3㎛ alumina powder and the saturated picric acid solution having 25$\^{C}$ and be maintained the constant temperature(25$\^{C}$) during GEM test.

• Journal of the korean academy of Pediatric Dentistry
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• v.10 no.1
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• pp.85-93
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• 1983

In one group that tested for the effects of grinding and etching on the deciduous teeth, S.E.M. examination on the ground or unground labial surface of deciduous maxillary central incisors were made after etching procedure with 40% phosphoric acid for 60 secs., 120 secs., 180 sees. each. In another group that tested for the degree of resin penetration to the ground and etched deciduous teeth, composite resin application was done to the ground deciduous maxillary central incisors that had been acid-etched for 30 secs., 60 secs., 90 sees., 120 sees., 180 secs. each. The tooth-resin specimens were cut at the middle 1/3 of the crown by 2mm thickness, and the adjacent tooth materials were demineralized by 10% hydrochloric acid, the author observed the tags of the resin replica with S.E.M.. Following results were obtained. 1. After 40% phosphoric acid etching, the unground deciduous enamel surface showed various types of etching pattern. 2. For the formation of regular micropores on deciduous enamel surface by acid etching with 40% phosphoric acid, the time over 120 secs. should be requested. 3. After 40% phosphoric acid etching, the ground deciduous enamel surface showed the same etching pattern that has been a preferential removal of prism peripheries despite different etching time. 4. On the ground group that etched over 60 secs. to 180 secs., the length of tags was $5{\mu}m$ to $8{\mu}m$, with a mean of $7{\mu}m$.

• Journal of the Korean Applied Science and Technology
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• v.32 no.3
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• pp.512-521
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• 2015

In this research, environmental friendly organic acid containing microetching system to improve adhesion strength between photoresist resin and Copper Clad Laminate(CCL) was developed without using strong oxidant $H_2O_2$. Etching rate and surface contamination on CCL were examined with various etching conditions with different etchants, organic acids and additives. to develope an optimum microetching condition. Etching solution with 0.04 M acetic acid showed the highest etching rate $0.4{\mu}m/min$. Etching solution with the higher concentration of APS showed the higher etching rate but surface contamination on CCL is very serious. In addition, stabilizer solution also played an important role to control the surface contamination. As a result of research, the etching solution containing 0.04 M of acetic acid, 0.1 M of APS with 4 g/L of stabilizer solution(ST-1) was best to improve adhesion between CCL and photoresist resin as well as showed the most clean and rough surface with the etching rate of $0.37{\mu}m/min$.