Journal of Integrative Natural Science (통합자연과학논문집)

The Basic Science Institute Chosun University (조선대학교 기초과학연구원)
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Investigation of the Changes of Fabry-Perot Fringe Patterns in Porous Silicon During Etching Process

  • Received : 2012.01.01
  • Accepted : 2012.03.27
  • Published : 2012.03.30
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Abstract

Changes of Fabry-Perot fringe patterns in porous silicon during etching process has been investigated. Four porous silicon samples were prepared with four different etch currents: (a) 10 $mA/cm^2$, (b) 30 $mA/cm^2$, (c) 50 $mA/cm^2$, (d) 100 $mA/cm^2$, respectively. Optical characterization of Fabry-Perot fringe pattern on porous silicon was achieved by Ocean optics 2000 spectrometer. The change of Fabry-Perot fringes was monitored and measured during the etching process. Fabry-Perot fringes pattern start to form after couple of minutes. As the etching time increased, more reflection peaks were observed. Its full width at half maximum (FWHM) decreased rapidly when the etching time increased.

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