• Title/Summary/Keyword: etched surface

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Ferroelectric domain inversion in $LiNbO_3$ crystal plate during heat treatment for Ti in-diffusion ($Ti:LiNbO_3$ 도파로 제작을 위한 열처리 과정 동안 강유전 도메인 특성에 미치는 영향)

  • Yang, W.S.;Lee, H.Y.;Kwon, S.W.;Kim, W.K.;Lee, H.Y.;Yoon, D.H.
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.15 no.3
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    • pp.124-127
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    • 2005
  • It is demonstrated that the annealing process for Ti in-diffusion to z-cut $LiNbO_3$ at temperature lower than the curie temperature in a platinum (Pt) box can cause a ferroelectric micro-domain inversion at the +z surface and Li out-diffusion, therefore which should be avoided or suppressed for waveguide type periodically poled lithium niobate (PPLN) devices. The depth of the inversion layer depends on the Ti-diffusion conditions such as temperature, atmosphere, the sealing method of $LiNbO_3$ in the Pt box and crystal orientation is experimentally examined. The result shows that the polarization-inverted domain boundary appears at the only +z surface and its thickness is about $1.6{\mu}m$. Also, for the etched $LiNbO_3$, surface the domain shape was observed by the optical microscope and atomic force microscopy (AEM), and distribution of the cation concentrations in the $LiNbO_3$ crystal by the secondary ion mass spectrometry (SIMS).

RETROSPECTIVE STUDY OF SHORT ROUGH SURFACE IMPLANTS (짧은 길이의 거친 표면 임프란트에 대한 후향적 연구)

  • Kong, Jun-Ha;Lee, Baek-Soo;Kim, Yeo-Gab;Kwon, Yong-Dae;Yoon, Byung-Wook;Choi, Byung-Joon
    • Maxillofacial Plastic and Reconstructive Surgery
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    • v.31 no.1
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    • pp.41-45
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    • 2009
  • Background: Reduced bone height is one of the major problems faced in restoring tooth loss with implants. By the use of short implants, it is possible to reduce complicated and invasive treatment such as bone graft, allowing more simple surgery. But short implants are generally considered to have lower success rates than that of standard implants. Purpose: To assess the results of short Straumann implants by a retrospective study of short Straumann implants with TPS(titanium plasma-sprayed) and SLA(sandblasted, large grit, acid etched) surfaces. Materials and methods: 173 implants in 106 patients who received short Straumann implant surgery(${\le}8\;mm$) in the department of oral and maxillofacial surgery, Kyunghee Dental Hospital, from February 1996 to October 2006 were selected and studied. All of the implants were followed up after prosthetic rehabilitation. The average follow-up period was 34 months with 119 months as the longest follow up period. The average follow-up period after prosthetic rehabilitation was 31 months. 64 females(60.4%) and 42 males(39.6%) participated in the research with the age range of 19 to 85(mean age 47). 20 patients(18.9%) were under 40, 85 patients(80.2%) were over 40 and under 70, and only one patient(0.9%) was over 70 years old. Results: 27 implants(15.6%) had TPS surface while 146 implants(84.4%) had SLA surface. 9 implants(5.2%) were 3.3, 108 implans(62.4%) were 4.1mm and 56 implants(32.4%) were 4.8mm in diameter. 167 implants(96.5%) were 8mm and 6 implants(3.5%) were 6mm in length. There were 24 implants(13.9%) on the maxillas and 149 implants(68.8%) on the mandibles. 119 implants(68.8%) were rehabilitated with FPD(fixed partial denture), 47 implants(27.2%) with single crowns and 4 implants(2.3%) with overdentures. Among the fixed partial dentures, 30 of them were splinted with short implants only. After over an year of follow-up period, 139 implants(96.5%) out of 144 implants showed marginal bone loss of less than 1mm. 3 out of 173 implants failed showing 98.27% survival rate. Conclusions: The use of short Straumann implants(${\le}8mm$) can be a simple and reliable treatment method in minimal residual bone height.

Effects of contamination by either blood or a hemostatic agent on the shear bond strength of orthodontic buttons

  • Gungor, Ahmet Yalcin;Alkis, Huseyin;Turkkahraman, Hakan
    • The korean journal of orthodontics
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    • v.43 no.2
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    • pp.96-100
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    • 2013
  • Objective: To evaluate the effects of contamination by either blood or a hemostatic agent on the shear bond strength (SBS) of orthodontic buttons. Methods: We used 45 freshly extracted, non-carious, impacted third molars that were divided into 3 groups of 15. Each tooth was etched with 37% phosphoric acid gel for 30 s. Human blood or the blood stopper agent was applied to the tooth surface in groups I and II, respectively. Group III teeth were untreated (controls). Orthodontic buttons were bonded to the teeth using light-curing composite resin. After bonding, the SBS of the button was determined using a Universal testing machine. Any adhesive remaining after debonding was assessed and scored according to the modified adhesive remnant index (ARI). ANOVA with post-hoc Tukey's test was used to determine significant differences in SBS and Fisher's exact test, to determine significant differences in ARI scores among groups. Results: ANOVA indicated a significant difference between groups (p < 0.001). The highest SBS values were measured in group III ($10.73{\pm}0.96$ MPa). The SBS values for teeth in groups I and II were significantly lower than that of group III (p < 0.001). The lowest SBS values were observed in group I teeth ($4.17{\pm}1.11$ MPa) (p < 0.001). Conclusions: Contamination of tooth surfaces with either blood or hemostatic agent significantly decreased the SBS of orthodontic buttons. When the contamination risk is high, it is recommended to use the blood stopper agent when bonding orthodontic buttons on impacted teeth.

Isolation Enhancement between Two Dual-Band Microstrip Patch Antennas Using EBG Structure without Common Ground Plane (독립된 접지면을 갖는 EBG 구조를 이용한 이중 대역 마이크로스트립 패치 안테나 사이의 격리도 향상)

  • Choi, Won-Sang;Lee, Hong-Min
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.23 no.3
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    • pp.306-313
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    • 2012
  • In order to enhance the isolation level between two dual-band E-slot microstrip patch antennas, EBG structure which operates in UMTS Tx(1.92~1.98 GHz) and Rx(2.11~2.17 GHz) band is proposed. The proposed EBG structure made with a periodic array of two different size EBG unit cells which has a modified mushroom-type for isolation improvement between two antennas. They do not share a common ground plane of the microstrip patch antenna. Overall size of the fabricated antenna is $210.5mm{\times}117mm$. The two different EBG unit cell sizes are $15.6mm{\times}4mm$ and $17.4mm{\times}4mm$, respectively. It was etched on the FR-4 substrate(thickness=3.93 mm, ${\varepsilon}_r$=4.6). The experiment results show that the isolation level between antennas in Tx/Rx band were improved by about 9 dB and 12 dB, respectively, through the use of the proposed EBG structure.

A Comparative Study of a Dielectric-Defined Process on AlGaAs/InGaAs/GaAs PHEMTs

  • Lim, Jong-Won;Ahn, Ho-Kyun;Ji, Hong-Gu;Chang, Woo-Jin;Mun, Jae-Kyoung;Kim, Hae-Cheon;Cho, Kyoung-Ik
    • ETRI Journal
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    • v.27 no.3
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    • pp.304-311
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    • 2005
  • We report on the fabrication of an AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) using a dielectric-defined process. This process was utilized to fabricate $0.12\;{\mu}m\;{\times}\;100 {\mu}m$ T-gate PHEMTs. A two-step etch process was performed to define the gate footprint in the $SiN_x$. The $SiN_x$ was etched either by dry etching alone or using a combination of wet and dry etching. The gate recessing was done in three steps: a wet etching for removal of the damaged surface layer, a dry etching for the narrow recess, and wet etching. A structure for the top of the T-gate consisting of a wide head part and a narrow lower layer part has been employed, taking advantage of the large cross-sectional area of the gate and its mechanically stable structure. From s-parameter data of up to 50 GHz, an extrapolated cut-off frequency of as high as 104 GHz was obtained. When comparing sample C (combination of wet and dry etching for the $SiN_x$) with sample A (dry etching for the $SiN_x$), we observed an 62.5% increase of the cut-off frequency. This is believed to be due to considerable decreases of the gate-source and gate-drain capacitances. This improvement in RF performance can be understood in terms of the decrease in parasitic capacitances, which is due to the use of the dielectric and the gate recess etching method.

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Spiral scanning imaging and quantitative calculation of the 3-dimensional screw-shaped bone-implant interface on micro-computed tomography

  • Choi, Jung-Yoo Chesaria;Choi, Cham Albert;Yeo, In-Sung Luke
    • Journal of Periodontal and Implant Science
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    • v.48 no.4
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    • pp.202-212
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    • 2018
  • Purpose: Bone-to-implant contact (BIC) is difficult to measure on micro-computed tomography (CT) because of artifacts that hinder accurate differentiation of the bone and implant. This study presents an advanced algorithm for measuring BIC in micro-CT acquisitions using a spiral scanning technique, with improved differentiation of bone and implant materials. Methods: Five sandblasted, large-grit, acid-etched implants were used. Three implants were subjected to surface analysis, and 2 were inserted into a New Zealand white rabbit, with each tibia receiving 1 implant. The rabbit was sacrificed after 28 days. The en bloc specimens were subjected to spiral (SkyScan 1275, Bruker) and round (SkyScan 1172, SkyScan 1275) micro-CT scanning to evaluate differences in the images resulting from the different scanning techniques. The partial volume effect (PVE) was optimized as much as possible. BIC was measured with both round and spiral scanning on the SkyScan 1275, and the results were compared. Results: Compared with the round micro-CT scanning, the spiral scanning showed much clearer images. In addition, the PVE was optimized, which allowed accurate BIC measurements to be made. Round scanning on the SkyScan 1275 resulted in higher BIC measurements than spiral scanning on the same machine; however, the higher measurements on round scanning were confirmed to be false, and were found to be the result of artifacts in the void, rather than bone. Conclusions: The results of this study indicate that spiral scanning can reduce metal artifacts, thereby allowing clear differentiation of bone and implant. Moreover, the PVE, which is a factor that inevitably hinders accurate BIC measurements, was optimized through an advanced algorithm.

Fluorine-based inductively coupled plasma etching of ZnO film (ZnO 박막의 fluorine-계 유도결합 플라즈마 식각)

  • Park, Jong-Cheon;Lee, Byeong-Woo;Kim, Byeong-Ik;Cho, Hyun
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.21 no.6
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    • pp.230-234
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    • 2011
  • High density plasma etching of ZnO film was performed in $CF_4$/Ar and $SF_6$/Ar inductively coupled plasmas. Maximum etch rates of ~1950 ${\AA}$/min and ~1400 ${\AA}$/min were obtained for $10CF_4$/5Ar and $10SF_6$/5Ar ICP discharges, respectively. The etched ZnO surfaces showed better RMS roughness values than the unetched control sample under most of the conditions examined. In the $10CF_4$/5Ar ICP discharges, very high etch selectivities were obtained for ZnO over Ni (max. 11) while Al showed etch selectivities in the range of 1.6~4.7 to ZnO.

The effect of IDS (immediate dentin sealing) on dentin bond strength under various thermocycling periods

  • Lee, sungbok Richard;Lee, Sang-Min;Park, Su-Jung;Lee, Suk-Won;Lee, Do Yun;Im, Byung-Jin;Ahn, Su-Jin
    • The Journal of Advanced Prosthodontics
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    • v.7 no.3
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    • pp.224-232
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    • 2015
  • PURPOSE. The purpose of this study was to find out the effect of immediate dentin sealing (IDS) on bond strength of ceramic restoration under various thermocycling periods with DBA (dentin bonding agent system). MATERIALS AND METHODS. Fifty freshly extracted human mandibular third molars were divided into 5 groups (1 control and 4 experimental groups) of 10 teeth. We removed enamel layer of sound teeth and embedded them which will proceed to be IDS, using All Bond II. A thermocycling was applied to experimental groups for 1, 2, 7, 14 days respectively and was not applied to control group. IPS Empress II for ceramic was acid-etched with ceramic etchant (9.5% HF) and silane was applied. Each ceramic disc was bonded to specimens with Duo-link, dual curable resin cement by means of light curing for 100 seconds. After the cementation procedures, shear bond strength measurement and SEM analysis of the fractured surface were done. The data were analyzed with a one-way ANOVA and Tukey multiple comparison test (${\alpha}$=.05). RESULTS. There were no statistically significant differences between 4 experimental groups and control group, however the mean value started to decrease in group 7d, and group 14d showed the lowest mean bond strength in all groups. Also, group 7d and 14d showed distinct exposed dentin and collapsed hybrid layer was observed in SEM analysis. CONCLUSION. In the present study, it can be concluded that ceramic restorations like a laminate veneer restoration should be bonded using resin cement within one week after IDS procedure.

ANALYSIS OF THE EFFECT OF HYDROXYL GROUPS IN SILICON DIRECT BONDING USING FT-IR (규소 기판 접합에 있어서 FT-IR을 이용한 수산화기의 영향에 관한 해석)

  • Park, Se-Kwang;Kwon, Ki-Jin
    • Journal of Sensor Science and Technology
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    • v.3 no.2
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    • pp.74-80
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    • 1994
  • Silicon direct bonding technology is very attractive for both silicon-on-insulator devices and sensor fabrication because of its thermal stress free structure and stability. The process of SDB includes hydration of silicon wafer and heat treatment in a wet oxidation furnace. After hydration process, hydroxyl groups of silicon wafer were analyzed by using Fourier transformation-infrared spectroscopy. In case of hydrophilic treatment using a ($H_{2}O_{2}\;:\;H_{2}SO_{4}$) solution, hydroxyl groups are observed in a broad band around the 3474 $cm^{-1}$ region. However, hydroxyl groups do not appear in case of diluted HF solution. The bonded wafer was etched by using tetramethylammonium hydroxide etchant. The surface of the self etch-stopped silicon dioxide is completely flat, so that it can be used as sensor applications such as pressure, flow and acceleration, etc..

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Effects of Addition of Al foil for Electrolytic Capacitors I. Shape Parameters of Etch Tunnel and Capacitance (전해 콘텐사용 알루미늄박의 애칭특성에 미치는 황산첨가의 영향 I. 에치터널의 형상 및 정전 용량)

  • Kim, Seong-Gap;Yu, In-Jong;Jang, Jae-Myeong;O, Han-Jun;Ji, Chung-Su
    • Korean Journal of Materials Research
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    • v.10 no.5
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    • pp.369-374
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    • 2000
  • In order to investigate the effects of addition of 1M sulfuric acid to the etching solution or 1M hydrochloric acid on the etching behavior of aluminum foil for electrolytic capacitors, the changes in the density of etch pit, the length and diameter of etch tunnels and the capacitance were analyzed using SEM, TEM, LCR meter etc. Sulfate ion as a corrosion inhibitor was contributed to the increase of the surface area comparing with chloride ion. By adding sul-furic acid the density of etch pit and the length of etched tunnel increased and the diameter of the tunnel decreased, resulting in the increase of capacitance. It was also shown that the capacitance decreased when the current density was below $0.9A/\textrm{cm}^2$, while remarkably increased in the other case.

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