• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.11
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• pp.2525-2531
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• 2012

Al-Cu alloy has been used as a circuit material for its low resistance and ease to process for long years at CMOS technology. However, basically metal is very susceptible to corrosion and which has been a long pending trouble in various fields using metal. The defect causes the reliability concerns, so improved methods are necessary to reduce the defect. In the various corrosion parameters, PR strip process conditions after metal etch and optimal cleaning solutions are controllable and increase the process margin to prevent the metal corrosion. This study proposes that chlorine residue after metal etch as the source of metal corrosion, and charges should be removed by optimizing PR strip process condition and cleaning condition.

• Korean Journal of Materials Research
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• v.8 no.7
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• pp.634-640
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• 1998

A well- shaped trench was investigated in view of the defect distribution along trench sidewall and bottom using high resolution transmission electron microscopy. The trench was formed by HBr plasma and additive gases in magnetically enhanced reactive ion etching system. Adding $0_2$ and other additive gases into HBr plasma makes it possible to eliminate sidewall undercut and lower surface roughness by forming the passivation layer of lateral etching, resulted in the well filled trench with oxide and polysilicon by subsequent deposition. The passivation layer of lateral etching was mainly composed of $SiO_xF_y$ $SiO_xBr_y$ confirmed by chemical analysis. It also affects the generation and distribution of lattice defects. Most of etch induced defects were found in the edge region of the trench bottom within the depth of 10$\AA$. They are generally decreased with the thickness of residue layer and almost disappeared below the uni¬formly thick residue layer. While the formation of crystalline defects in silicon substrate mainly depends on the incident angle and energy of etch species, the region of surface defects on the thickness of residue layer formed during trench etching.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.5
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• pp.265-269
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• 2000

$(Ba, Sr)TiO_3$thin films were etched with a magnetically enhanced inductively coupled plasma (MEICP) at different CF4/Ar gas mixing ratios. Experimental was done by varying the etching parameters such as rf power, dc bias and chamber pressure. The maximum etch rate of the BST films was $1800{AA}/min$ under $CF_4/(CF_4+Ar)$ of 0.1, 600 W/350 V and 5 mTorr. The selectivity of BST to Pt and PR was 0.6, 0.7, respectively. X-ray photoelectron spectroscopy (XPS) results show that surface reaction between Ba, Sr, Ti and C, F radicals occurs during the (Ba, Sr)TiO3 etching. To analyze the composition of surface residue after the etching, films etched with different CF_4/Ar$ gas mixing ratio were investigated using XPS and secondary ion mass spectroscopy (SIMS).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.52-55
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• 2000

In this study, (Ba,Sr)$TiO_3$(BST) thin films were etched with a magnetically enhanced inductively coupled plasma(MEICP) as a function Ar/$CF_4$ gas mixing ratio. Experiment was done by varying the etching parameters such as rf power, dc bias voltage and chamber pressure. The maximum etch rate of the BST films was 1700 ${\AA}/min$ under $CF_4/(CF_4+Ar)$ of 0.1, 600 W/350 V and 5 mTorr. The selectivity of BST to Pt and PR was 0.6, 0.7, respectively. X -ray photoelectron spectroscopy(XPS) studies shows that there are surface reaction between Ba, Sr, Ti and C, F radicals during the etching. To analyze the composition of surface residue remaining after the etching, films etched with different $CF_4$/Ar gas mixing ratio were investigated using XPS.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.26-29
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• 2001

$SrBi_2Ta_2O_{9}$ thin films were etched at high-density $Cl_2/CF_4/Ar$ in inductively coupled plasma system. The etching of SBT thin films in $Cl_2/CF_4/Ar$ were chemically assisted reactive ion etching. The maximum etch rate was 1300 $\AA$/min at 900W in $Cl_2(20)/CF_4(20)/Ar(80)$. As rf power increase, radicals (F, Cl) and ion(Ar) increase. The influence of plasma induced damage during etching process was investigated in terms of the surface morphology and th phase of X-ray diffraction. The chemical residue was investigated with secondary ion mass sperometry.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.26-29
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• 2001

SrBi$_2$Ta$_2$$O_{9}$ thin films were etched at high-density C1$_2$/CF$_{4}$/Ar in inductively coupled plasma system. The etching of SBT thin films in C1$_2$/CF$_{4}$/Ar were chemically assisted reactive ion etching. The maximum etch rate was 1300 $\AA$/min at 900W in Cl$_2$(20)/CF$_4$(20)/Ar(80). As f power increase, radicals (F, Cl) and ion(Ar) increase. The influence of plasma induced damage during etching process was investigated in terms of the surface morphology and th phase of X-ray diffraction. The chemical residue was investigated with secondary ion mass spectrometry.y.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.21-25
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• 2001

In this study, recovery of plasma etching· damage in PZT thin film with additive gas and re-annealing after etching have been investigated. The PZT thin films were etched as a function of $Cl_2/CF_4$ with addition of Ar and $O_2$ with inductively induced plasma. The etch rates of PZT thin films were 1450 $\AA$/min at 30% additive Ar into $(Cl_2(80%)+CF_4 (20%))$ and 1100 $\AA$/min at 10% additive $O_2$ into $C(Cl_2(80%)+CF_4(20%))$. In order to recovery properties of PZT thin films after etching, the etched PZT thin films were re-annealed at various temperatures in at $O_2$ atmosphere. From the hysteresis curves, ferroelectrical properties are improved by $O_2$ re-annealing process. The improvement of ferroelectric behavior at annealed sample is consistent with the increase of the (100) and (200) PZT peaks revealed by x-ray diffraction (XRD). From x-ray photoelectron spectroscopy (XPS) analysis, intensity of Pb-O, Zr-O and Ti-O peak are increased and the chemical residue peak is reduced by $O_2$ re-annealing. The ferroelectric behavior consistent with the dielectric nature of $Ti_xO_y$ is recovered by $O_2$ recombination during rapid thermal annealing process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.4
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• pp.319-324
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• 2002

In this study, the reduce of plasma etching damage in PZT thin film with addictive gas and re-annealing after etching have been investigated. The PZT thin films were etched as a function of $Cl_2/CF_4$ with addition of Ar and $O_2$ with inductively coupled plasma. The etch rates of PZT thin films were 1450 ${\AA}/min$ at 30% additive Ar and 1100 ${\AA}/min$ at 10% auditive $O_2$ into $Cl_2/CF_4$ gas mixing ratio of 8/2. In order to reduce plasma damage of PZT thin films after etching, the etched PZT thin films were re-annealed at various temperatures at $O_2$ atmosphere. From the hysteresis curries, the ferroelectric properties are improved by $O_2$ re-annealing process. The improvement of ferroelectric behavior at annealed PZT films is consistent wish the increase of the (100) and (200) PZT peaks revealed by x-ray diffraction (XRD). From x ray photoelectron spectroscopy (XPS) analysis, the intensity of Pb-O, Zr-O and Ti-O peak are increased and the chemical residue peak is reduced by $O_2$ re-annealing. The ferroelectric behavior consistent with the dielectric nature of $Ti_xO_y$ is recovered by $O_2$ recombination during rapid thermal annealing process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.21-25
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• 2001

In this study, recovery of plasma etching damage in PZT thin film with additive gas and re-annealing after etching have been investigated. The PZT thin films were etched as a function of Cl$_2$/CF$_4$ with addition of Ar and $O_2$ with inductively induced plasma. The etch rates of PZT thin films were 1450$\AA$/min at 30% additive Ar into (Cl$_2$(80%)+CF$_4$ (20%)) and 1100$\AA$/min at 10% additive $O_2$ into C(Cl$_2$(80%)+CF$_4$ (20%)). In order to recovery properties of PZT thin films after etching, the etched PZT thin films were re-annealed at various temperatures in at $O_2$ atmosphere. From the hysteresis curves, ferroelectrical properties are improved by $O_2$ re-annealing process. The improvement of ferroelectric behavior at annealed sample is consistent with the increase of the (100) and (200) PZT peaks revealed by x-ray diffraction (XRD). From x-ray photoelectron spectroscopy (XPS) analysis, intensity of Pb-O, Zr-O and Ti-O peak are increased and the chemical residue peak is reduced by $O_2$ re-annealing. The ferroelectric behavior consistent with the dielectric nature of Ti$_{x}$O$_{y}$ is recovered by $O_2$ recombination during rapid thermal annealing process.s.s.

• Korean Chemical Engineering Research
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• v.59 no.4
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• pp.632-638
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• 2021

With the copper interconnection in the semiconductor process, complex residues including copper oxide, fluoride, and polymeric fluorocarbon are formed by plasma etching. In this study, a cleaning solution was prepared with a component having an amine group (-NH₂) and a carboxyl group (-COOH), and the characteristics of removing post-etch residues in the copper wiring process were analyzed. In the cleaning solution containing an amine group, the length of the component substituted with nitrogen and the length of the carbon chain influenced the cleaning effect, and the etching rate of copper oxide increased as the pH of the cleaning solution increased. The activity of the amine group is in the basic region, and the activity of the carboxyl group is in the acidic region, and the cleaning process proceeds through complex formation with copper or copper oxide in each region.